TWI454731B - 用於改進投影物鏡的成像性質之方法以及該投影物鏡 - Google Patents

用於改進投影物鏡的成像性質之方法以及該投影物鏡 Download PDF

Info

Publication number
TWI454731B
TWI454731B TW095118286A TW95118286A TWI454731B TW I454731 B TWI454731 B TW I454731B TW 095118286 A TW095118286 A TW 095118286A TW 95118286 A TW95118286 A TW 95118286A TW I454731 B TWI454731 B TW I454731B
Authority
TW
Taiwan
Prior art keywords
lens
lenses
projection objective
image
ratio
Prior art date
Application number
TW095118286A
Other languages
English (en)
Chinese (zh)
Other versions
TW200710428A (en
Inventor
肯拉第 歐雷夫
菲爾德曼 海克
瑞契特 傑羅德
伯列第斯多 沙夏
弗明雅 安卓斯
崗那 托拉夫
赫梅爾 沃夫崗
Original Assignee
卡爾蔡司Ｓｍｔ有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 卡爾蔡司Ｓｍｔ有限公司 filed Critical 卡爾蔡司Ｓｍｔ有限公司
Publication of TW200710428A publication Critical patent/TW200710428A/zh
Application granted granted Critical
Publication of TWI454731B publication Critical patent/TWI454731B/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0025—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration
    • G02B27/0068—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration having means for controlling the degree of correction, e.g. using phase modulators, movable elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0825—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a flexible sheet or membrane, e.g. for varying the focus
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0081—Simple or compound lenses having one or more elements with analytic function to create variable power
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S359/00—Optical: systems and elements
    • Y10S359/90—Methods

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW095118286A 2005-05-27 2006-05-23 用於改進投影物鏡的成像性質之方法以及該投影物鏡 TWI454731B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US68571605P 2005-05-27 2005-05-27

Publications (2)

Publication Number Publication Date
TW200710428A TW200710428A (en) 2007-03-16
TWI454731B true TWI454731B (zh) 2014-10-01

Family

ID=36764394

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095118286A TWI454731B (zh) 2005-05-27 2006-05-23 用於改進投影物鏡的成像性質之方法以及該投影物鏡

Country Status (6)

Country Link
US (3) US7777963B2 (https=)
EP (1) EP1883861B1 (https=)
JP (1) JP5527970B2 (https=)
KR (1) KR101346402B1 (https=)
TW (1) TWI454731B (https=)
WO (1) WO2006125617A2 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI454731B (zh) 2005-05-27 2014-10-01 卡爾蔡司Ｓｍｔ有限公司 用於改進投影物鏡的成像性質之方法以及該投影物鏡
JP5069232B2 (ja) 2005-07-25 2012-11-07 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置の投影対物レンズ
DE102006047666A1 (de) * 2006-09-28 2008-04-03 Carl Zeiss Smt Ag Projektionsobjektiv für eine Mikrolithographieanlage mit verbesserten Abbildungseigenschaften und Verfahren zum Verbessern der Abbildungseigenschaften des Projektionsobjektives
ATE554427T1 (de) 2007-01-22 2012-05-15 Zeiss Carl Smt Gmbh Verfahren zur verbesserung von bildgebungseigenschaften eines optischen systems und optisches system
US7929115B2 (en) 2007-06-01 2011-04-19 Carl Zeiss Smt Gmbh Projection objective and projection exposure apparatus for microlithography
DE102007027200A1 (de) * 2007-06-13 2008-12-18 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie
JP2009004509A (ja) * 2007-06-20 2009-01-08 Canon Inc 露光装置およびデバイス製造方法
DE102008001909A1 (de) 2007-07-11 2009-01-15 Carl Zeiss Smt Ag Kompensation von durch Linsenerwärmung hervorgerufener Bildfehler bei verdrehter Multipolbeleuchtung
DE102008021833B4 (de) * 2007-12-19 2010-04-22 Carl Zeiss Smt Ag Verfahren zur Einstellung einer Beleuchtungswinkelverteilung und gleichzeitig einer Intensitätsverteilung über ein in ein Bildfeld abzubildendes Objektfeld
JP5511199B2 (ja) * 2009-02-25 2014-06-04 キヤノン株式会社 投影光学系、露光装置、およびデバイス製造方法
JP5656682B2 (ja) * 2011-02-22 2015-01-21 キヤノン株式会社 反射屈折光学系及びそれを有する撮像装置
CN104537182B (zh) * 2015-01-05 2017-11-24 中国科学院光电技术研究所 一种透镜热变形对光学系统成像结果影响的分析方法
JP2017102275A (ja) * 2015-12-02 2017-06-08 株式会社ニコン 投影光学系、投影光学系の調整方法、露光装置、露光方法、およびデバイス製造方法
JP2017102274A (ja) * 2015-12-02 2017-06-08 株式会社ニコン 投影光学系、投影方法、投影光学系の調整方法、露光装置、露光方法、およびデバイス製造方法
JP2017102273A (ja) * 2015-12-02 2017-06-08 株式会社ニコン 投影光学系、投影方法、投影光学系の調整方法、露光装置、露光方法、およびデバイス製造方法
JP6744797B2 (ja) * 2016-10-07 2020-08-19 リコーインダストリアルソリューションズ株式会社 投射光学系および投射装置および撮像装置
DE102023204235A1 (de) 2023-05-08 2024-11-14 Carl Zeiss Smt Gmbh Lithographiesystem mit abspaltbaren Linsen

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6388823B1 (en) * 1998-06-20 2002-05-14 Carl-Zeiss-Stiftung Trading As Carl Zeiss Optical system, especially a projection light facility for microlithography
US20030234918A1 (en) * 2002-06-20 2003-12-25 Nikon Corporation Adjustable soft mounts in kinematic lens mounting system
US20050046815A1 (en) * 2000-03-30 2005-03-03 Canon Kabushiki Kaisha Supporting structure of optical element, exposure apparatus having the same, and manufacturing method of semiconductor device

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4226507A (en) * 1979-07-09 1980-10-07 The Perkin-Elmer Corporation Three actuator deformable specimen
US4993823A (en) * 1989-06-29 1991-02-19 Eastman Kodak Company Method for correction of distortions of an imaging device
US5995263A (en) * 1993-11-12 1999-11-30 Nikon Corporation Projection exposure apparatus
JPH1039208A (ja) * 1996-07-23 1998-02-13 Nikon Corp 投影光学系
JP4096399B2 (ja) * 1998-04-09 2008-06-04 株式会社ニコン 大口径ズームレンズ
DE19859634A1 (de) * 1998-12-23 2000-06-29 Zeiss Carl Fa Optisches System, insbesondere Projektionsbelichtungsanlage der Mikrolithographie
US6600608B1 (en) * 1999-11-05 2003-07-29 Carl-Zeiss-Stiftung Catadioptric objective comprising two intermediate images
KR100854052B1 (ko) * 1999-12-29 2008-08-26 칼 짜이스 에스엠테 아게 인접한 비구면 렌즈 표면을 구비한 투사 대물 렌즈
EP1344111A1 (de) * 2000-12-22 2003-09-17 Carl Zeiss SMT AG Objektiv mit mindestens einer asphärischen linse
WO2002054036A1 (en) * 2000-12-28 2002-07-11 Nikon Corporation Imaging characteristics measuring method, imaging characteriatics adjusting method, exposure method and system, program and recording medium, and device producing method
AU2002243903A1 (en) 2001-02-08 2002-08-19 Sciperio, Inc. Genetically configured antenna and/or frequency selection surface
DE10120446C2 (de) * 2001-04-26 2003-04-17 Zeiss Carl Projektionsbelichtungsanlage sowie Verfahren zur Kompensation von Abbildungsfehlern in einer Projektionsbelichtungsanlage, insbesondere für die Mikro-Lithographie
DE10143385C2 (de) * 2001-09-05 2003-07-17 Zeiss Carl Projektionsbelichtungsanlage
AU2003211559A1 (en) * 2002-03-01 2003-09-16 Nikon Corporation Projection optical system adjustment method, prediction method, evaluation method, adjustment method, exposure method, exposure device, program, and device manufacturing method
DE10210899A1 (de) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
KR20050035890A (ko) * 2002-08-23 2005-04-19 가부시키가이샤 니콘 투영 광학계, 포토리소그래피 방법, 노광 장치 및 그 이용방법
JP2004317534A (ja) 2003-04-11 2004-11-11 Nikon Corp 反射屈折型の結像光学系、露光装置、および露光方法
US7436484B2 (en) * 2004-12-28 2008-10-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI454731B (zh) 2005-05-27 2014-10-01 卡爾蔡司Ｓｍｔ有限公司 用於改進投影物鏡的成像性質之方法以及該投影物鏡

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6388823B1 (en) * 1998-06-20 2002-05-14 Carl-Zeiss-Stiftung Trading As Carl Zeiss Optical system, especially a projection light facility for microlithography
US20050046815A1 (en) * 2000-03-30 2005-03-03 Canon Kabushiki Kaisha Supporting structure of optical element, exposure apparatus having the same, and manufacturing method of semiconductor device
US20030234918A1 (en) * 2002-06-20 2003-12-25 Nikon Corporation Adjustable soft mounts in kinematic lens mounting system

Also Published As

Publication number Publication date
KR20080038087A (ko) 2008-05-02
US7777963B2 (en) 2010-08-17
JP5527970B2 (ja) 2014-06-25
JP2008546007A (ja) 2008-12-18
EP1883861B1 (en) 2013-04-17
TW200710428A (en) 2007-03-16
WO2006125617A3 (en) 2007-04-26
EP1883861A2 (en) 2008-02-06
US20080310029A1 (en) 2008-12-18
US20100290024A1 (en) 2010-11-18
WO2006125617A2 (en) 2006-11-30
KR101346402B1 (ko) 2014-01-02
US9069263B2 (en) 2015-06-30
US9581813B2 (en) 2017-02-28
US20150293352A1 (en) 2015-10-15

Similar Documents

Publication Publication Date Title
TWI454731B (zh) 用於改進投影物鏡的成像性質之方法以及該投影物鏡
US6867931B2 (en) Dual-imaging optical system
JP3341269B2 (ja) 投影露光装置、露光方法、半導体の製造方法及び投影光学系の調整方法
JP5068271B2 (ja) マイクロリソグラフィ照明システム、及びこの種の照明システムを含む投影露光装置
US7446952B2 (en) Catadioptric projection objective
US7576934B2 (en) Groupwise corrected objective
JP5404931B2 (ja) 偏向ミラーを含む反射屈折投影対物系及び投影露光方法
US5943172A (en) Projection optical system and projection exposure apparatus
JP2003043362A (ja) 反射屈折縮小レンズ
KR20010062830A (ko) 비구면 요소를 갖는 투영 노출 렌즈 시스템
JP4207478B2 (ja) オプティカルインテグレータ、照明光学装置、露光装置および露光方法
TW200839455A (en) Method for improving the imaging properties of an optical system, and such an optical system
JP2008546007A5 (https=)
US20020080498A1 (en) Projection optical system
JPH03188407A (ja) 顕微鏡の紫外線適合乾燥対物レンズ
JPH11176744A (ja) 投影光学系の組立調整方法
US7403262B2 (en) Projection optical system and exposure apparatus having the same
JP5047544B2 (ja) リソグラフィ投影対物系の補正方法およびリソグラフィ投影対物系
JP2004198748A (ja) オプティカルインテグレータ、照明光学装置、露光装置および露光方法
JP2007013179A5 (https=)
US7359036B2 (en) Imaging system, in particular for a microlithographic projection exposure apparatus
JPH09223661A (ja) 露光装置
US7046459B1 (en) Catadioptric reductions lens
JPH1010429A (ja) ２回結像光学系
JPH11295605A (ja) 直筒型反射屈折光学系