TWI453290B - Rolled copper foil - Google Patents

Rolled copper foil Download PDF

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TWI453290B
TWI453290B TW101113923A TW101113923A TWI453290B TW I453290 B TWI453290 B TW I453290B TW 101113923 A TW101113923 A TW 101113923A TW 101113923 A TW101113923 A TW 101113923A TW I453290 B TWI453290 B TW I453290B
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copper foil
less
final rolling
ratio
ray diffraction
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TW101113923A
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Chinese (zh)
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TW201309818A (en
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Kaichiro Nakamuro
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Jx Nippon Mining & Metals Corp
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    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/022Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B21MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21BROLLING OF METAL
    • B21B1/00Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations
    • B21B1/40Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations for rolling foils which present special problems, e.g. because of thinness
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B21MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21BROLLING OF METAL
    • B21B3/00Rolling materials of special alloys so far as the composition of the alloy requires or permits special rolling methods or sequences ; Rolling of aluminium, copper, zinc or other non-ferrous metals
    • B21B2003/005Copper or its alloys
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0393Flexible materials

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)

Description

壓延銅箔Calendered copper foil

本發明係關於一種例如用於可撓性配線板(FPC:Flexible Printed Circuit)且適於覆銅積層板之壓延銅箔。The present invention relates to a rolled copper foil which is suitable for, for example, a flexible printed circuit (FPC) and is suitable for a copper clad laminate.

可撓性配線板(FPC)係將樹脂層與銅箔積層而形成,且較佳地用於重複彎曲部。作為此種FPC中所使用之銅箔,廣泛使用有彎曲性優異之壓延銅箔。作為提昇壓延銅箔之彎曲性之方法,報告有使再結晶退火後之立方體集合組織擴展之技術(專利文獻1)。又,作為使再結晶退火後之立方體集合組織擴展之方法,列舉有規定最終壓延加工度或壓延條件之方法(專利文獻2)、及於壓延後保留立方體方位之方法(專利文獻3)。A flexible wiring board (FPC) is formed by laminating a resin layer and a copper foil, and is preferably used for repeating a bent portion. As the copper foil used in such an FPC, a rolled copper foil excellent in flexibility is widely used. As a method of improving the flexibility of the rolled copper foil, a technique for expanding the cubic aggregate structure after recrystallization annealing has been reported (Patent Document 1). Moreover, as a method of expanding the cubic aggregate structure after recrystallization annealing, a method of specifying the final rolling workability or rolling conditions (Patent Document 2) and a method of retaining the cube orientation after rolling are described (Patent Document 3).

專利文獻1:日本專利第3009383號公報Patent Document 1: Japanese Patent No. 3009383

專利文獻2:日本特開2009-185376號公報Patent Document 2: Japanese Laid-Open Patent Publication No. 2009-185376

專利文獻3:日本特開2010-150597號公報Patent Document 3: Japanese Laid-Open Patent Publication No. 2010-150597

然而,先前之使立方體集合組織擴展之方法存在如下問題:為調整最終壓延加工度,必需根據最終產品之厚度變更立方體集合組織進行成長之最終壓延前退火時之銅箔素材之厚度、或於特殊條件下進行壓延等,從而生產性降低。However, the previous method of expanding the cube assembly organization has the following problem: in order to adjust the final calendering degree, it is necessary to change the thickness of the copper foil material during the final pre-calendering annealing according to the thickness of the final product, or to specialize in the growth of the cube assembly. Calendering or the like is performed under the conditions, whereby productivity is lowered.

又,存在即便立方體集合組織之擴展度(銅箔表面之(200)方位之X射線繞射強度)為相同程度,彎曲性亦不 同之情形,從而僅藉由控制(200)方位難以穩定地獲得彎曲性優異之壓延銅箔。Moreover, even if the degree of expansion of the aggregate structure of the cube (the X-ray diffraction intensity of the (200) orientation of the copper foil surface) is the same, the flexibility is not In the same manner, it is difficult to stably obtain a rolled copper foil excellent in flexibility by merely controlling the (200) orientation.

即,本發明係為解決上述課題而完成者,其目的在於提供一種使彎曲性穩定而獲得之壓延銅箔。In other words, the present invention has been made to solve the above problems, and an object of the invention is to provide a rolled copper foil obtained by stabilizing flexibility.

本發明人等經過種種研究之結果發現:不僅銅箔之(200)方位,具有(420)方位及(311)方位之晶粒亦會對彎曲性造成影響。具有(420)方位及(311)方位之晶粒因於彎曲時應力施加方向與滑動方向接近而難以引起滑動變形,因此易於使彎曲性降低。As a result of various studies, the inventors have found that not only the (200) orientation of the copper foil, but also the (420) orientation and the (311) orientation of the crystal grains affect the bendability. The crystal grains having the (420) orientation and the (311) orientation are less likely to cause sliding deformation because the stress application direction is close to the sliding direction when bending, and thus the bendability is liable to be lowered.

即,本發明之壓延銅箔於200℃退火0.5小時後之(200)面之X射線繞射峰之積分強度I(200)與(311)面之X射線繞射峰之積分強度I(311)的比I(311)/I(200)為0.001以上且0.01以下。That is, the integrated intensity I (200) of the X-ray diffraction peak of the (200) plane of the rolled copper foil of the present invention after annealing at 200 ° C for 0.5 hours and the integrated intensity I (311) of the X-ray diffraction peak of the (311) plane The ratio I(311)/I(200) is 0.001 or more and 0.01 or less.

又,本發明之壓延銅箔於200℃退火0.5小時後之(200)面之X射線繞射峰之積分強度I(200)與(420)面之X射線繞射峰之積分強度I(420)的比I(420)/I(200)為0.005以上0.02以下。Further, the integrated intensity I (200) of the X-ray diffraction peak of the (200) plane of the rolled copper foil of the present invention after annealing at 200 ° C for 0.5 hours and the integrated intensity I (420) of the X-ray diffraction peak of the (420) plane The ratio I(420)/I(200) is 0.005 or more and 0.02 or less.

又,本發明之壓延銅箔於200℃退火0.5小時後之(200)面之X射線繞射峰之積分強度I(200)與(311)面之X射線繞射峰之積分強度I(311)的比I(311)/I(200)為0.001以上0.01以下,且於200℃退火0.5小時後之(200)面之X射線繞射峰之積分強度I(200)與(420)面之X射線繞射峰之積分強度I(420)的比I(420)/I(200)為0.005以上0.02以下。Further, the integrated intensity I (200) of the X-ray diffraction peak of the (200) plane of the rolled copper foil of the present invention after annealing at 200 ° C for 0.5 hours and the integrated intensity I (311) of the X-ray diffraction peak of the (311) plane The ratio I (311) / I (200) is 0.001 or more and 0.01 or less, and the integrated intensity I (200) of the (200) plane of the (200) plane after annealing at 200 ° C for 0.5 hours and the X-ray winding of the (420) plane The ratio I(420)/I(200) of the integrated intensity I (420) of the peak is 0.005 or more and 0.02 or less.

請求項1或3所記載之壓延銅箔較佳為對最終壓延前且再結晶退火後之X射線繞射峰之積分強度I(200)b與I(311)b之比I(311)b/I(200)b為0.01以上0.02以下的銅箔素材進行最終壓延而形成。The rolled copper foil according to claim 1 or 3 is preferably a ratio I (311)b/ of the integrated intensity I(200)b to I(311)b of the X-ray diffraction peak before final calendering and after recrystallization annealing. I (200)b is formed by final rolling of a copper foil material of 0.01 or more and 0.02 or less.

於請求項4所記載之壓延銅箔中,較佳為於將最終壓延加工度設為η,且以η=Ln{(最終壓延前之厚度)/(最終壓延後之厚度)}表示時,η≧2.3。In the rolled copper foil according to claim 4, it is preferable that when the final rolling workability is η and η=Ln{(thickness before final rolling)/(thickness after final rolling)}, ≧≧2.3.

於請求項4或5所記載之壓延銅箔中,較佳為I(311)b/I(200)b/η為0.1以上0.7以下。In the rolled copper foil according to claim 4 or 5, I(311)b/I(200)b/η is preferably 0.1 or more and 0.7 or less.

於請求項2或3所記載之壓延銅箔中,較佳為對最終壓延前且再結晶退火後之X射線繞射峰之積分強度I(200)b與I(420)b之比I(420)b/I(200)b為0.02以上0.04以下的銅箔素材進行最終壓延而形成。In the rolled copper foil according to claim 2 or 3, it is preferred that the ratio of the integrated intensity I(200)b to I(420)b of the X-ray diffraction peak before final rolling and after recrystallization annealing is I (420). The copper foil material having b/I (200)b of 0.02 or more and 0.04 or less is finally rolled.

於請求項7所記載之壓延銅箔中,較佳為於將最終壓延加工度設為η,且以η=Ln{(最終壓延前之厚度)/(最終壓延後之厚度)}表示時,η≧2.3。In the rolled copper foil according to claim 7, it is preferable that when the final rolling workability is η and η = Ln { (thickness before final rolling) / (thickness after final rolling)}, ≧≧2.3.

於請求項7或8所記載之壓延銅箔中,較佳為於將最終壓延加工度設為η,且以η=Ln{(最終壓延前之厚度)/(最終壓延後之厚度)}表示時,I(420)b/I(200)b/η為0.5以上1.2以下。In the rolled copper foil according to claim 7 or 8, it is preferable to set the final rolling degree to η and to represent η=Ln{(thickness before final rolling)/(thickness after final rolling)} In the case, I(420)b/I(200)b/η is 0.5 or more and 1.2 or less.

請求項3所記載之壓延銅箔較佳為對下述銅箔素材進行最終壓延而形成:最終壓延前且再結晶退火後之X射線繞射峰之積分強度I(200)b與I(311)b之比I(311)b/I(200)b為0.01以上0.02以下,並且最終壓延前且再 結晶退火後之X射線繞射峰之積分強度I(200)b與I(420)b之比I(420)b/I(200)b為0.02以上0.04以下。The rolled copper foil described in claim 3 is preferably formed by final calendering of the following copper foil material: integrated intensity I (200)b and I (311) of the X-ray diffraction peak before final calendering and after recrystallization annealing. b ratio I(311)b/I(200)b is 0.01 or more and 0.02 or less, and before final rolling and then The ratio I (420)b/I(200)b of the integrated intensity I(200)b to I(420)b of the X-ray diffraction peak after crystal annealing is 0.02 or more and 0.04 or less.

於請求項10所記載之壓延銅箔中,較佳為於將最終壓延加工度設為η,且以η=Ln{(最終壓延前之厚度)/(最終壓延後之厚度)}表示時,η≧2.3。In the rolled copper foil according to claim 10, it is preferable that when the final rolling workability is η and η=Ln{(thickness before final rolling)/(thickness after final rolling)}, ≧≧2.3.

於請求項10或11所記載之壓延銅箔中,較佳為於將最終壓延加工度設為η,且以η=Ln{(最終壓延前之厚度)/(最終壓延後之厚度)}表示時,I(311)b/I(200)b/η為0.1以上0.7以下,且I(420)b/I(200)b/η為0.5以上1.2以下。In the rolled copper foil according to claim 10 or 11, it is preferable to set the final rolling degree to η and to represent η=Ln{(thickness before final rolling)/(thickness after final rolling)} In the case, I(311)b/I(200)b/η is 0.1 or more and 0.7 or less, and I(420)b/I(200)b/η is 0.5 or more and 1.2 or less.

根據本發明,可穩定地獲得彎曲性優異之壓延銅箔。According to the invention, the rolled copper foil excellent in flexibility can be obtained stably.

以下,對本發明之實施形態之壓延銅箔進行說明。Hereinafter, the rolled copper foil according to the embodiment of the present invention will be described.

<成分組成><Component composition>

銅箔之成分組成,可較佳地使用JIS-H3100(C1100)中規定之精銅(TPC)或JIS-H3100(C1020)無氧銅(OFC)。又,亦可含有10~500質量ppm之Sn,及/或含有10~500質量ppm之Ag作為添加元素,且將剩餘部分設為精銅或無氧銅。As the composition of the copper foil, fine copper (TPC) or JIS-H3100 (C1020) oxygen-free copper (OFC) prescribed in JIS-H3100 (C1100) can be preferably used. Further, it may contain 10 to 500 ppm by mass of Sn, and/or 10 to 500 ppm by mass of Ag as an additive element, and the remainder may be made of refined copper or oxygen-free copper.

又,亦能夠以合計含有20~500質量ppm之由Ag、Sn、In、Ti、Zn、Zr、Fe、P、Ni、Si、Te、Cr、Nb、V構成之元素之一種以上作為添加元素,且將剩餘部分設為精銅或無氧銅。In addition, one or more elements including Ag, Sn, In, Ti, Zn, Zr, Fe, P, Ni, Si, Te, Cr, Nb, and V may be contained in an amount of 20 to 500 ppm by mass as an additive element. And the remaining part is set to fine copper or oxygen-free copper.

再者,FPC中所使用之壓延銅箔由於被要求具有彎曲 性,故而壓延銅箔之厚度較佳為20μm以下。Furthermore, the rolled copper foil used in the FPC is required to have a bend Therefore, the thickness of the rolled copper foil is preferably 20 μm or less.

<第1態樣之壓延銅箔><The first aspect of rolled copper foil>

本發明之第1態樣之壓延銅箔於200℃退火0.5小時後,(200)面之X射線繞射峰之積分強度I(200)與(311)面之X射線繞射峰之積分強度I(311)的比I(311)/I(200)為0.001以上0.01以下。若於200℃對壓延銅箔進行0.5小時之退火則會產生再結晶組織,使立方體集合組織擴展而提昇壓延銅箔之彎曲性。另一方面,於再結晶後具有(420)方位及(311)方位之晶粒因於彎曲時應力施加方向與滑動方向接近而難以引起滑動變形,因此易使彎曲性降低。The integrated intensity I (200) of the X-ray diffraction peak of the (200) plane and the integrated intensity I of the X-ray diffraction peak of the (311) plane after annealing of the rolled copper foil of the first aspect of the present invention at 200 ° C for 0.5 hours ( The ratio I(311)/I(200) of 311) is 0.001 or more and 0.01 or less. If the rolled copper foil is annealed at 200 ° C for 0.5 hour, a recrystallized structure is generated, and the cubic aggregate structure is expanded to improve the flexibility of the rolled copper foil. On the other hand, since the crystal grains having the (420) orientation and the (311) orientation after recrystallization are close to the sliding direction due to the stress application direction during bending, it is difficult to cause sliding deformation, so that the bendability is liable to be lowered.

就上述情況而言,若與(200)方位相比(311)方位之比例較少則可使彎曲性提昇,因此將比I(311)/I(200)設為0.01以下。若比I(311)/I(200)超過0.01,則(311)方位之比例變多而使彎曲性降低。雖比I(311)/I(200)越低則彎曲性越高而越佳,但就實用上而言為0.001以上之值。In the above case, if the ratio of the (311) orientation is smaller than the (200) orientation, the bendability can be improved. Therefore, the ratio I(311)/I(200) is set to 0.01 or less. When the ratio I(311)/I(200) exceeds 0.01, the ratio of the (311) orientation increases, and the bendability is lowered. Although the lower the I (311) / I (200), the higher the flexibility, the better, but practically it is a value of 0.001 or more.

又,第1態樣之壓延銅箔能夠以η=2.3以上之加工度對最終壓延前且再結晶退火後之比I(311)b/I(200)b為0.01以上0.02以下之銅箔素材進行最終壓延來製造。Further, the rolled copper foil of the first aspect can be a copper foil material having a ratio of η = 2.3 or more to a ratio of I (311) b / I (200) b before final rolling and after recrystallization annealing of 0.01 or more and 0.02 or less. Final rolling is performed to manufacture.

此處,認為對銅箔進行再結晶退火後之(420)方位及(311)方位會以存在於再結晶退火前之壓延組織中之具有(420)方位及(311)方位之晶粒作為起點而擴展。又,認為壓延組織中之(420)方位及(311)方位係源自壓延前之 組織。即,於最終壓延前且再結晶退火後,藉由控制(420)方位及(311)方位之擴展程度,可控制對最終壓延後之箔進行再結晶退火後之(420)方位及(311)方位。Here, it is considered that the (420) orientation and the (311) orientation after recrystallization annealing of the copper foil are based on the crystal grains having (420) orientation and (311) orientation existing in the rolled microstructure before recrystallization annealing. And expansion. Moreover, it is considered that the (420) orientation and the (311) orientation in the calendered structure are derived from pre-calendering. organization. That is, before the final rolling and after the recrystallization annealing, by controlling the degree of expansion of the (420) orientation and the (311) orientation, the (420) orientation and (311) after recrystallization annealing of the finally rolled foil can be controlled. Orientation.

就上述情況而言,若最終壓延前且再結晶退火後之比I(311)b/I(200)b超過0.02,則有於最終壓延後具有(311)方位之晶粒亦大量殘留,具有(311)方位之晶粒之比例增加,因而無法獲得充分之彎曲性之情形。另一方面,於比I(311)b/I(200)b未達0.01之情形時,有晶粒因退火而粗大化,因此無法藉由最終壓延施加充分之應變,對最終壓延後之箔進行再結晶退火後無法獲得充分之彎曲性之情形。In the above case, if the ratio I(311)b/I(200)b before the final rolling and after the recrystallization annealing exceeds 0.02, the crystal grains having the (311) orientation after the final rolling are also largely retained. (311) The ratio of the crystal grains of the orientation is increased, so that sufficient bending property cannot be obtained. On the other hand, when the ratio I(311)b/I(200)b is less than 0.01, the crystal grains are coarsened by annealing, so that sufficient strain cannot be applied by final rolling, and the foil after final rolling is applied. A case where sufficient bendability cannot be obtained after recrystallization annealing.

於最終壓延加工度未達η=2.3之情形時,存在無法藉由最終壓延施加充分之應變,對最終壓延後之箔進行再結晶退火後無法獲得充分之彎曲性之情況。When the final rolling degree is less than η = 2.3, there is a case where sufficient strain cannot be applied by final rolling, and sufficient bending property cannot be obtained after recrystallization annealing of the finally rolled foil.

於第1態樣之壓延銅箔中,I(311)b/I(200)b/η較佳為0.1以上0.7以下。又,I(311)b/I(200)b/η較佳為0.1以上0.5以下。In the rolled copper foil according to the first aspect, I(311)b/I(200)b/η is preferably 0.1 or more and 0.7 or less. Further, I(311)b/I(200)b/η is preferably 0.1 or more and 0.5 or less.

一般而言,於銅箔之製造步驟中由於最終壓延加工之加工度較高,故而存在即便控制最終壓延前之組織,其影響亦難以充分地保留至壓延後之傾向。因此,藉由對最終壓延前之組織與最終壓延之加工度一併進行管理,可獲得進而充分之彎曲性。In general, in the manufacturing process of the copper foil, since the degree of processing of the final calendering process is high, even if the structure before the final rolling is controlled, the influence of the structure tends to be sufficiently retained until the rolling. Therefore, by controlling the degree of processing of the structure before final rolling and the final rolling, sufficient flexibility can be obtained.

若I(311)b/I(200)b/η超過0.5,則有於最終壓延後具有(311)方位之晶粒亦大量殘留,具有(311)方位 之晶粒之比例增加,因而無法獲得充分之彎曲性之情形。雖比I(311)b/I(200)b/η越低則彎曲性越高而越佳,但就實用上而言為0.05以上之值。If I(311)b/I(200)b/η exceeds 0.5, there are a large number of grains having a (311) orientation after the final rolling, and there is a (311) orientation. The proportion of the crystal grains is increased, so that sufficient bending property cannot be obtained. The lower the ratio of I(311)b/I(200)b/η, the higher the flexibility and the better, but practically it is a value of 0.05 or more.

<第2態樣之壓延銅箔><The second aspect of rolled copper foil>

本發明之第2態樣之壓延銅箔於200℃退火0.5小時後,(200)面之X射線繞射峰之積分強度I(200)與(420)面之X射線繞射峰之積分強度I(420)的比I(420)/I(200)為0.005以上0.02以下。The integrated intensity I (200) of the X-ray diffraction peak of the (200) plane and the integrated intensity I of the X-ray diffraction peak of the (420) plane after annealing the copper foil of the second aspect of the present invention at 200 ° C for 0.5 hours ( The ratio I(420)/I(200) of 420) is 0.005 or more and 0.02 or less.

如上所述,於再結晶後具有(420)方位及(311)方位之晶粒因於彎曲時應力施加方向與滑動方向接近而難以引起滑動變形,因此易使彎曲性降低。即,若與(200)方位相比(420)方位之比例較少則可使彎曲性提昇,因此將比I(420)/I(200)設為0.02以下。若比I(420)/I(200)超過0.02,則(420)方位之比例變多而使彎曲性降低。然而,若比I(420)/I(200)未達0.005,則(200)方位之比例變得過多,雖可獲得充分之彎曲性,但會因銅箔過軟而使處理性降低。As described above, since the crystal grains having the (420) orientation and the (311) orientation after recrystallization are close to the sliding direction when the stress is applied, it is difficult to cause sliding deformation, so that the bendability is liable to be lowered. In other words, if the ratio of the (420) orientation is smaller than the (200) orientation, the bendability can be improved. Therefore, the ratio I(420)/I(200) is set to 0.02 or less. When the ratio I(420)/I(200) exceeds 0.02, the ratio of the (420) orientation increases, and the bendability is lowered. However, if the ratio I(420)/I(200) is less than 0.005, the ratio of the (200) orientation becomes too large, and sufficient flexibility can be obtained, but the handleability is lowered because the copper foil is too soft.

又,第2態樣之壓延銅箔能夠以較佳為η=2.3以上之加工度對最終壓延前且再結晶退火後之比I(420)b/I(200)b為0.02以上且0.04以下之銅箔素材進行最終壓延而製造。Further, the rolled copper foil of the second aspect can have a ratio of workability of η = 2.3 or more to a ratio of I (420)b / I (200)b before final rolling and after recrystallization annealing, and is 0.02 or more and 0.04 or less. The copper foil material is produced by final rolling.

若最終壓延前且再結晶退火後之比I(420)b/I(200)b超過0.04,則有於最終壓延後具有(420)方位之晶粒亦大量殘留,具有(420)方位之晶粒之比例增加,因而無法獲得充分之彎曲性之情形。另一方面,於比I(420)b/I (200)b未達0.02之情形時,有晶粒因退火而粗大化,因此無法藉由最終壓延施加充分之應變,對最終壓延後之箔進行再結晶退火後無法獲得充分之彎曲性之情形。If the ratio I(420)b/I(200)b before the final calendering and after the recrystallization annealing exceeds 0.04, there are a large number of crystal grains having a (420) orientation after the final rolling, and the crystal has a (420) orientation. The proportion of the granules is increased, so that sufficient flexibility cannot be obtained. On the other hand, Yu I(420)b/I When (200)b is less than 0.02, the crystal grains are coarsened by annealing, so that sufficient strain cannot be applied by final rolling, and sufficient bending property cannot be obtained after recrystallization annealing of the finally rolled foil. .

於第2態樣之壓延銅箔中,I(420)b/I(200)b/η較佳為0.5以上1.2以下。又,I(420)b/I(200)b/η更佳為0.5以上1.0以下。In the rolled copper foil of the second aspect, I(420)b/I(200)b/η is preferably 0.5 or more and 1.2 or less. Further, I(420)b/I(200)b/η is more preferably 0.5 or more and 1.0 or less.

此處,作為再結晶組織之具有(420)方位之晶粒藉由壓延加工而旋轉,成為具有其他方位之晶粒。因此,於壓延加工度較高之情形時(420)面之比例會減少,I(420)會降低。另一方面,於加工度較低之情形時具有(420)方位之晶粒易殘留,I(420)易變高。Here, the crystal grains having the (420) orientation as the recrystallized structure are rotated by the calendering process to form crystal grains having other orientations. Therefore, when the degree of calendering is high, the ratio of the (420) plane is reduced, and I(420) is lowered. On the other hand, in the case where the degree of processing is low, the crystal grains having a (420) orientation tend to remain, and I (420) tends to become high.

自上述情況而言,若I(420)b/I(200)b/η超過1.0,則有於最終壓延後具有(420)方位之晶粒亦大量殘留,具有(420)方位之晶粒之比例增加,因而無法獲得充分之彎曲性之情形。又,若I(420)b/I(200)b/η未達0.5,則雖可獲得充分之彎曲性,但存在因銅箔過軟而使處理性降低之情形。In the above case, if I(420)b/I(200)b/η exceeds 1.0, there are a large number of crystal grains having a (420) orientation after the final rolling, and the crystal grains have a (420) orientation. The proportion is increased, so that sufficient flexibility cannot be obtained. Further, when I(420)b/I(200)b/η is less than 0.5, sufficient flexibility can be obtained, but the copper foil is too soft and the handleability is lowered.

<壓延銅箔之製造><Manufacture of rolled copper foil>

第1及第2態樣之壓延銅箔均可於對錠塊進行熱壓延後,進行退火前壓延、再結晶退火、及最終壓延而製造。此處,再結晶方位之穩定度為(200)>(311)>(420)之順序,且存在再結晶退火時之升溫速度越高則不穩定之(420)方位及(311)方位越增加之傾向。因此,較佳為將再結晶退火時之升溫速度設為5~50℃/s,使速度比習知 的慢。The rolled copper foil of the first and second aspects can be produced by subjecting the ingot to hot rolling, followed by rolling before annealing, recrystallization annealing, and final rolling. Here, the stability of the recrystallization orientation is in the order of (200) > (311) > (420), and the higher the temperature rise rate in the recrystallization annealing, the more unstable (420) orientation and (311) orientation increase. The tendency. Therefore, it is preferred to set the temperature increase rate during recrystallization annealing to 5 to 50 ° C / s, so that the speed ratio is known. Slow.

又,較佳為設為退火前壓延之η=1.6以上之加工度,並將再結晶退火後且最終壓延前之結晶粒徑設為10μm以上30μm以下。於使最終壓延前之結晶粒徑為10μm以下的退火條件之情形時,殘留未再結晶組織之可能性變高。又,於最終壓延前之結晶粒徑超過30μm之情形時,存在藉由最終壓延無法施加充分之應變,對最終壓延後之箔進行再結晶退火後無法獲得充分之彎曲性之情況。Moreover, it is preferable to set the workability of η=1.6 or more after rolling before annealing, and to set the crystal grain size after recrystallization annealing and before final rolling to 10 μm or more and 30 μm or less. In the case of annealing conditions in which the crystal grain size before final rolling is 10 μm or less, there is a high possibility that residual non-recrystallized structure remains. Further, when the crystal grain size before the final rolling exceeds 30 μm, sufficient strain cannot be applied by final rolling, and sufficient bending property cannot be obtained after recrystallization annealing of the finally rolled foil.

又,如上所述,能夠以η=2.3以上之加工度進行最終壓延。Further, as described above, the final rolling can be performed with a degree of work of η = 2.3 or more.

再者,結晶粒徑係藉由JIS H0501之切斷法而測定。Further, the crystal grain size was measured by a cutting method of JIS H0501.

實施例Example

首先,製造表1中記載之組成之銅錠,並進行熱壓延直至厚度成為10mm為止。其後,重複進行退火與壓延,於壓延至特定之厚度之後使其通過750℃之連續退火爐進行再結晶退火。進而,以表1所示之加工度進行最終冷壓延,而獲得表1所示之厚度之銅箔。再者,將再結晶退火時之升溫速度示於表1中。First, a copper ingot having the composition described in Table 1 was produced and hot rolled until the thickness became 10 mm. Thereafter, annealing and calendering were repeated, and after calendering to a specific thickness, it was subjected to recrystallization annealing through a continuous annealing furnace at 750 °C. Further, the final cold rolling was carried out at the degree of work shown in Table 1, and copper foil having the thickness shown in Table 1 was obtained. Further, the rate of temperature rise at the time of recrystallization annealing is shown in Table 1.

<取向度><degree of orientation>

於將最終壓延所得之銅箔於200℃退火0.5小時使其再結晶之後,分別求出藉由壓延面之X射線繞射而求出之(200)面、(311)面、(420)面之強度之積分值(I)。After the copper foil obtained by the final rolling was annealed at 200 ° C for 0.5 hour to recrystallize, the (200) plane, the (311) plane, and the (420) plane obtained by X-ray diffraction of the calendering surface were respectively determined. The integral value of the intensity (I).

又,分別求出最終壓延前且再結晶退火後之(200)面、(311)面、(420)面之X射線繞射峰之積分強度。該值係 如I(200)b般以添加「b」表示。Further, the integrated intensities of the X-ray diffraction peaks of the (200) plane, the (311) plane, and the (420) plane before the final calendering and after the recrystallization annealing were respectively determined. The value is As in I(200)b, it is indicated by adding "b".

<彎曲性><bending>

於將最終壓延所得之銅箔試樣於200℃加熱30分鐘使其再結晶之後,藉由圖1所示之彎曲試驗裝置,進行彎曲疲勞壽命之測定。該裝置成為將振動傳遞構件3結合於振動驅動體4而成之構造,被試驗銅箔1以箭頭所示之螺釘2部分與3前端部共計4點固定於裝置。若振動部3上下地驅動,則銅箔1之中間部以特定之曲率半徑r彎曲成髮夾狀。在本試驗中,求出於以下之條件下重複進行彎曲時之直至斷裂為止之次數。After the copper foil sample obtained by final rolling was heated at 200 ° C for 30 minutes to recrystallize, the bending fatigue life was measured by the bending test apparatus shown in FIG. 1 . This device has a structure in which the vibration transmitting member 3 is coupled to the vibration driving body 4, and the test copper foil 1 is fixed to the device by a total of four points at the front end portion of the screw 2 and the three end portions indicated by the arrows. When the vibrating portion 3 is driven up and down, the intermediate portion of the copper foil 1 is bent into a hairpin shape with a specific radius of curvature r. In this test, the number of times until the fracture was repeated under the following conditions was determined.

再者,試驗條件如下所述,試驗片寬度:12.7mm,試驗片長度:200mm,試驗片選取方向:以試驗片之長度方向與壓延方向平行之方式選取,曲率半徑r:1.5mm,振動衝程:20mm,振動速度:1000次/分鐘。Furthermore, the test conditions are as follows, the test piece width: 12.7 mm, the test piece length: 200 mm, and the test piece selection direction: the length direction of the test piece is parallel to the rolling direction, the radius of curvature r: 1.5 mm, the vibration stroke : 20 mm, vibration speed: 1000 times / minute.

又,以如下之基準評價彎曲性。若評價為◎、○、或△,則彎曲性良好。Further, the flexibility was evaluated on the basis of the following criteria. When the evaluation is ◎, ○, or Δ, the bendability is good.

◎:彎曲次數為20萬次以上,彎曲性最佳◎: The bending times are more than 200,000 times, and the bending is best.

○:彎曲次數為10萬次以上未達20萬次,彎曲性良好○: The number of bending is 100,000 times or more and less than 200,000 times, and the bending property is good.

△:彎曲次數為5萬次以上未達10萬次,彎曲性優異△: The number of bending is 50,000 times or more and less than 100,000 times, and the bending property is excellent.

×:彎曲次數未達5萬次,彎曲性較差×: The number of bending is less than 50,000 times, and the bending is poor.

將所得之結果示於表1、表2中。The results obtained are shown in Tables 1 and 2.

此處,表1中之組成欄之「TPC」表示JIS-H3100(C1100)中規定之精銅(TPC),「OFC」表示JIS-H3100 (C1020)中規定之無氧銅(OFC)。因此,例如表1中之組成欄之「190ppm Ag-TPC」係指於JIS-H3100(C1100)中規定之精銅(TPC)中添加有190質量ppm之Ag之組成。又,表1中之組成欄之「100ppm Sn-OFC」係指於JIS-H3100(C1020)中規定之無氧銅(OFC)中添加有100質量ppm之Sn之組成。Here, "TPC" in the composition column in Table 1 indicates the refined copper (TPC) specified in JIS-H3100 (C1100), and "OFC" indicates JIS-H3100. Oxygen-free copper (OFC) as specified in (C1020). Therefore, for example, "190 ppm Ag-TPC" in the composition column of Table 1 means a composition in which 190 mass ppm of Ag is added to the refined copper (TPC) specified in JIS-H3100 (C1100). In addition, "100 ppm of Sn-OFC" in the composition column of Table 1 means a composition in which 100 mass ppm of Sn is added to oxygen-free copper (OFC) prescribed in JIS-H3100 (C1020).

由表1顯而易見,於I(311)/I(200)為0.001以上0.01以下、或I(420)/I(200)為0.005以上0.02以下之各實施例之情形時,彎曲性優異。尤其於I(311)/I(200)為0.001以上0.01以下,且I(420)/I(200)為0.005以上0.02以下之實施例1~12、15~21之情形時,與實施例13、14相比彎曲性更優異。As is apparent from Table 1, when I (311) / I (200) is 0.001 or more and 0.01 or less, or I (420) / I (200) is 0.005 or more and 0.02 or less, the flexibility is excellent. In particular, when I (311) / I (200) is 0.001 or more and 0.01 or less, and I (420) / I (200) is 0.005 or more and 0.02 or less, in the case of Examples 1 to 12 and 15 to 21, and Example 13 14 is more excellent than bending.

另一方面,於I(311)/I(200)超過0.01且I(420)/I(200)超過0.02之比較例1~3之情形時,彎曲性較差。On the other hand, in the case of Comparative Examples 1 to 3 in which I(311)/I(200) exceeded 0.01 and I(420)/I(200) exceeded 0.02, the flexibility was poor.

再者,由表2顯而易見,於各實施例之情形時,I(311)b/I(200)b為0.01以上0.02以下,或I(311)b/I(200)b/η為0.1以上0.7以下。又,於各實施例之情形時,I(420)b/I(200)b為0.02以上0.04以下,或I(420)b/I(200)b/η為0.5以上1.2以下。尤其於實施例1~12、15~21之情形時,I(311)/I(200)為0.001以上0.01以下,且I(420)/I(200)為0.005以上0.02以下,彎曲性尤其優異。Further, as apparent from Table 2, in the case of each of the examples, I(311)b/I(200)b is 0.01 or more and 0.02 or less, or I(311)b/I(200)b/η is 0.1 or more. 0.7 or less. Further, in the case of each of the examples, I(420)b/I(200)b is 0.02 or more and 0.04 or less, or I(420)b/I(200)b/η is 0.5 or more and 1.2 or less. In particular, in the case of Examples 1 to 12 and 15 to 21, I(311)/I(200) is 0.001 or more and 0.01 or less, and I(420)/I(200) is 0.005 or more and 0.02 or less, and the flexibility is particularly excellent. .

另一方面,於比較例1~3之情形時,I(311)b/I(200)b超過0.02且I(311)b/I(200)b/η超過0.7。同樣地,於比較例1~3之情形時,I(420)b/I(200)b超過0.04,且I(420)b/I(200)b/η超過1.2。On the other hand, in the case of Comparative Examples 1 to 3, I(311)b/I(200)b exceeded 0.02 and I(311)b/I(200)b/η exceeded 0.7. Similarly, in the case of Comparative Examples 1 to 3, I(420)b/I(200)b exceeded 0.04, and I(420)b/I(200)b/η exceeded 1.2.

1‧‧‧被試驗銅箔1‧‧‧Tested copper foil

2‧‧‧螺釘2‧‧‧ screws

3‧‧‧振動傳遞構件(振動部)3‧‧‧Vibration transmission member (vibration part)

4‧‧‧振動驅動體4‧‧‧Vibration driver

圖1係表示藉由彎曲試驗裝置進行彎曲疲勞壽命之測定之方法的圖。Fig. 1 is a view showing a method of measuring a bending fatigue life by a bending test apparatus.

1‧‧‧被試驗銅箔1‧‧‧Tested copper foil

2‧‧‧螺釘2‧‧‧ screws

3‧‧‧振動傳遞構件(振動部)3‧‧‧Vibration transmission member (vibration part)

4‧‧‧振動驅動體4‧‧‧Vibration driver

Claims (12)

一種壓延銅箔,其於200℃退火0.5小時後之(200)面之X射線繞射峰之積分強度I(200)與(311)面之X射線繞射峰之積分強度I(311)的比I(311)/I(200)為0.001以上0.008以下。 A ratio of the integrated intensity I (200) of the X-ray diffraction peak of the (200) plane to the integrated intensity I (311) of the X-ray diffraction peak of the (311) plane after annealing at 200 ° C for 0.5 hour. (311) / I (200) is 0.001 or more and 0.008 or less. 一種壓延銅箔,其於200℃退火0.5小時後之(200)面之X射線繞射峰之積分強度I(200)與(420)面之X射線繞射峰之積分強度I(420)的比I(420)/I(200)為0.005以上0.02以下。 A ratio of the integrated intensity I (200) of the X-ray diffraction peak of the (200) plane and the integrated intensity I (420) of the X-ray diffraction peak of the (420) plane after annealing at 200 ° C for 0.5 hour. (420) / I (200) is 0.005 or more and 0.02 or less. 一種壓延銅箔,其於200℃退火0.5小時後之(200)面之X射線繞射峰之積分強度I(200)與(311)面之X射線繞射峰之積分強度I(311)的比I(311)/I(200)為0.001以上0.01以下,且於200℃退火0.5小時後之(200)面之X射線繞射峰之積分強度I(200)與(420)面之X射線繞射峰之積分強度I(420)的比I(420)/I(200)為0.005以上0.02以下。 A ratio of the integrated intensity I (200) of the X-ray diffraction peak of the (200) plane to the integrated intensity I (311) of the X-ray diffraction peak of the (311) plane after annealing at 200 ° C for 0.5 hour. (311) / I (200) is 0.001 or more and 0.01 or less, and the integrated intensity I (200) of the (200) plane X-ray diffraction peak after annealing at 200 ° C for 0.5 hours and the X-ray diffraction peak of the (420) plane The ratio I (420) / I (200) of the integrated intensity I (420) is 0.005 or more and 0.02 or less. 如申請專利範圍第1或3項之壓延銅箔,其係對最終壓延前且再結晶退火後之X射線繞射峰之積分強度I(200)b與I(311)b之比I(311)b/I(200)b為0.01以上0.02以下的銅箔素材進行最終壓延而形成。 A rolled copper foil according to claim 1 or 3, which is a ratio of the integrated intensity I(200)b to I(311)b of the X-ray diffraction peak before final calendering and after recrystallization annealing, I(311) The copper foil material having b/I (200)b of 0.01 or more and 0.02 or less is finally rolled. 如申請專利範圍第4項之壓延銅箔,其中,於將最終壓延加工度設為η,且以η=Ln{(最終壓延前之厚度)/(最終壓延後之厚度)}表示時,η≧2.3。 The rolled copper foil according to claim 4, wherein the final calendering degree is η, and η = Ln { (thickness before final rolling) / (thickness after final rolling)}, η ≧2.3. 如申請專利範圍第4項之壓延銅箔,其中,I(311) b/I(200)b/η為0.1以上0.7以下。For example, the rolled copper foil of the fourth application patent scope, wherein I(311) b/I(200)b/η is 0.1 or more and 0.7 or less. 如申請專利範圍第2或3項之壓延銅箔,其係對最終壓延前且再結晶退火後之X射線繞射峰之積分強度I(200)b與I(420)b之比I(420)b/I(200)b為0.02以上0.04以下的銅箔素材進行最終壓延而形成。A rolled copper foil according to claim 2 or 3, which is a ratio of the integrated intensity I(200)b to I(420)b of the X-ray diffraction peak before final calendering and after recrystallization annealing, I(420) The copper foil material having b/I (200)b of 0.02 or more and 0.04 or less is finally rolled. 如申請專利範圍第7項之壓延銅箔,其中,於將最終壓延加工度設為η,且以η=Ln{(最終壓延前之厚度)/(最終壓延後之厚度)}表示時,η≧2.3。The rolled copper foil according to item 7 of the patent application, wherein the final calendering degree is η, and η=Ln{(thickness before final rolling)/(thickness after final rolling)}, η ≧2.3. 如申請專利範圍第7項之壓延銅箔,其中,於將最終壓延加工度設為η,且以η=Ln{(最終壓延前之厚度)/(最終壓延後之厚度)}表示時,I(420)b/I(200)b/η為0.5以上1.2以下。The rolled copper foil according to item 7 of the patent application, wherein the final calendering degree is η, and η=Ln{(thickness before final rolling)/(thickness after final rolling)}, (420) b/I (200) b / η is 0.5 or more and 1.2 or less. 如申請專利範圍第3項之壓延銅箔,其係對下述銅箔素材進行最終壓延而形成:最終壓延前且再結晶退火後之X射線繞射峰之積分強度I(200)b與I(311)b之比I(311)b/I(200)b為0.01以上0.02以下,並且最終壓延前且再結晶退火後之X射線繞射峰之積分強度I(200)b與I(420)b之比I(420)b/I(200)b為0.02以上0.04以下。The rolled copper foil according to item 3 of the patent application is formed by final calendering of the following copper foil material: integrated intensity I (200)b and I of the X-ray diffraction peak before final calendering and after recrystallization annealing ( 311)b ratio I(311)b/I(200)b is 0.01 or more and 0.02 or less, and the integrated intensity I(200)b and I(420)b of the X-ray diffraction peak before final calendering and after recrystallization annealing The ratio I(420)b/I(200)b is 0.02 or more and 0.04 or less. 如申請專利範圍第10項之壓延銅箔,其中,於將最終壓延加工度設為η,且以η=Ln{(最終壓延前之厚度)/(最終壓延後之厚度)}表示時,η≧2.3。The rolled copper foil according to claim 10, wherein the final calendering degree is η, and η=Ln{(thickness before final rolling)/(thickness after final rolling)}, η ≧2.3. 如申請專利範圍第10或11項之壓延銅箔,其中,於將最終壓延加工度設為η,且以η=Ln{(最終壓延前之 厚度)/(最終壓延後之厚度)}表示時,I(311)b/I(200)b/η為0.1以上0.7以下,且I(420)b/I(200)b/η為0.5以上1.2以下。A rolled copper foil according to claim 10 or 11, wherein the final calendering degree is η, and η = Ln { (before final rolling) When the thickness is / (the thickness after final rolling)}, I(311)b/I(200)b/η is 0.1 or more and 0.7 or less, and I(420)b/I(200)b/η is 0.5 or more. 1.2 or less.
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Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014058704A (en) * 2012-09-14 2014-04-03 Jx Nippon Mining & Metals Corp Rolled copper foil
JP2014058705A (en) * 2012-09-14 2014-04-03 Jx Nippon Mining & Metals Corp Rolled copper foil and copper-clad laminate
JP6104200B2 (en) * 2014-03-13 2017-03-29 Jx金属株式会社 Rolled copper foil, copper clad laminate, flexible printed circuit board, and electronic device
KR101721314B1 (en) * 2015-05-21 2017-03-29 제이엑스금속주식회사 Rolled copper foil, copper clad laminate, and flexible printed board and electronic device
CN106304689A (en) * 2015-06-05 2017-01-04 Jx日矿日石金属株式会社 Rolled copper foil, copper-clad laminated board and flexible printed board and electronic equipment
JP6294376B2 (en) * 2016-02-05 2018-03-14 Jx金属株式会社 Copper foil for flexible printed circuit board, copper-clad laminate using the same, flexible printed circuit board, and electronic device
CN107046768B (en) * 2016-02-05 2019-12-31 Jx金属株式会社 Copper foil for flexible printed board, copper-clad laminate using same, flexible printed board, and electronic device
JP6781562B2 (en) * 2016-03-28 2020-11-04 Jx金属株式会社 Copper foil for flexible printed circuit boards, copper-clad laminates using it, flexible printed circuit boards, and electronic devices
JP2019194360A (en) * 2019-06-26 2019-11-07 Jx金属株式会社 Copper foil for flexible printed wiring board, and copper clad laminate, flexible printed wiring board and electronic device using the same
JP7186141B2 (en) * 2019-07-10 2022-12-08 Jx金属株式会社 Copper foil for flexible printed circuit boards
CN114269957B (en) * 2019-09-27 2022-07-29 三菱综合材料株式会社 Pure copper plate
US12035469B2 (en) 2020-03-06 2024-07-09 Mitsubishi Materials Corporation Pure copper plate, copper/ceramic bonded body, and insulated circuit board
JP7513717B2 (en) * 2021-01-20 2024-07-09 トーレ・アドバンスド・マテリアルズ・コリア・インコーポレーテッド Copper foil laminate film, electronic device including same, and method for manufacturing said copper foil laminate film

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101481760A (en) * 2008-01-08 2009-07-15 日立电线株式会社 Rolled copper foil and manufacturing method of rolled copper foil
JP2010090408A (en) * 2008-10-03 2010-04-22 Dowa Metaltech Kk Copper-alloy sheet and method for therefor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01150748A (en) * 1987-12-08 1989-06-13 Rinnai Corp Surplus heat discharging mechanism for heating device
JP2782790B2 (en) 1989-06-07 1998-08-06 富士ゼロックス株式会社 Image reading device
JP3009383B2 (en) * 1998-03-31 2000-02-14 日鉱金属株式会社 Rolled copper foil and method for producing the same
JP4524471B2 (en) * 2004-08-30 2010-08-18 Dowaメタルテック株式会社 Copper alloy foil and manufacturing method thereof
JP4466688B2 (en) * 2007-07-11 2010-05-26 日立電線株式会社 Rolled copper foil
JP5390852B2 (en) * 2008-12-24 2014-01-15 株式会社Shカッパープロダクツ Rolled copper foil
JP2010150597A (en) 2008-12-25 2010-07-08 Hitachi Cable Ltd Rolled copper foil
JP5094834B2 (en) * 2009-12-28 2012-12-12 Jx日鉱日石金属株式会社 Copper foil manufacturing method, copper foil and copper clad laminate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101481760A (en) * 2008-01-08 2009-07-15 日立电线株式会社 Rolled copper foil and manufacturing method of rolled copper foil
JP2010090408A (en) * 2008-10-03 2010-04-22 Dowa Metaltech Kk Copper-alloy sheet and method for therefor

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