TWI480397B - Rolled copper foil - Google Patents
Rolled copper foil Download PDFInfo
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- TWI480397B TWI480397B TW101141268A TW101141268A TWI480397B TW I480397 B TWI480397 B TW I480397B TW 101141268 A TW101141268 A TW 101141268A TW 101141268 A TW101141268 A TW 101141268A TW I480397 B TWI480397 B TW I480397B
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- Prior art keywords
- copper foil
- cold rolling
- rolling
- annealing
- final
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 107
- 239000011889 copper foil Substances 0.000 title claims description 88
- 238000000137 annealing Methods 0.000 claims description 43
- 238000005097 cold rolling Methods 0.000 claims description 43
- 238000012545 processing Methods 0.000 claims description 35
- 238000005096 rolling process Methods 0.000 claims description 31
- 238000005098 hot rolling Methods 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 description 17
- 239000010949 copper Substances 0.000 description 17
- 239000011347 resin Substances 0.000 description 13
- 229920005989 resin Polymers 0.000 description 13
- 238000005452 bending Methods 0.000 description 12
- 238000001953 recrystallisation Methods 0.000 description 11
- 238000012360 testing method Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 238000003490 calendering Methods 0.000 description 8
- 239000000956 alloy Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000010191 image analysis Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 238000010008 shearing Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 230000037303 wrinkles Effects 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000011573 trace mineral Substances 0.000 description 1
- 235000013619 trace mineral Nutrition 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21B—ROLLING OF METAL
- B21B1/00—Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations
- B21B1/40—Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations for rolling foils which present special problems, e.g. because of thinness
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/04—Alloys based on copper with zinc as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21B—ROLLING OF METAL
- B21B3/00—Rolling materials of special alloys so far as the composition of the alloy requires or permits special rolling methods or sequences ; Rolling of aluminium, copper, zinc or other non-ferrous metals
- B21B2003/005—Copper or its alloys
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0355—Metal foils
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1105—Heating or thermal processing not related to soldering, firing, curing or laminating, e.g. for shaping the substrate or during finish plating
Description
本發明係關於一種可較佳地用於FPC(Flexible Print Circuit,可撓性印刷電路基板)之壓延銅箔。The present invention relates to a rolled copper foil which can be preferably used for an FPC (Flexible Print Circuit).
可撓性印刷電路基板(FPC)係自積層有銅箔與樹脂之銅箔積層板(CCL,Copper Clad Laminate)藉由蝕刻去除多餘之銅部並進行電路加工而製造。作為該FPC用銅箔,使用電解銅箔或壓延銅箔,但尤其是於要求較高之彎曲性之用途中較多地使用壓延銅箔。作為壓延銅箔之組成,可使用精銅(tough-pitch copper)、無氧銅或於其等中添加有微量之元素者。The flexible printed circuit board (FPC) is manufactured by etching a copper foil laminated plate (CCL, Copper Clad Laminate) with a copper foil and a resin by etching to remove excess copper portions and performing circuit processing. As the copper foil for FPC, an electrolytic copper foil or a rolled copper foil is used, but in particular, a rolled copper foil is used in many applications where high flexibility is required. As a composition of the rolled copper foil, a tough-pitch copper, an oxygen-free copper, or a trace element added thereto may be used.
此外,於製造CCL時,對銅箔進行加熱而再結晶,但通常銅箔於再結晶前後尺寸會發生變化。因此,若銅箔之尺寸變化率較大,則CCL製造後銅箔冷卻而收縮,成為對與銅箔積層之樹脂施加收縮應力而變形之狀態。其後,若為了進行上述電路加工而藉由蝕刻去除CCL中之銅箔,則欲將施加於樹脂之收縮應力去除而使樹脂恢復為原來之尺寸。藉此,例如即便將銅箔之蝕刻時之尺寸設為1 mm,亦有由於蝕刻後樹脂擴大為原來之尺寸時尺寸變為大於1 mm,因此FPC之尺寸穩定性降低,難以形成目標之形狀或尺寸之電路之情形。Further, in the production of CCL, the copper foil is heated and recrystallized, but usually the copper foil changes in size before and after recrystallization. Therefore, when the dimensional change rate of the copper foil is large, the copper foil is cooled and shrunk after the production of the CCL, and is deformed by applying shrinkage stress to the resin laminated with the copper foil. Thereafter, if the copper foil in the CCL is removed by etching in order to perform the above-described circuit processing, the shrinkage stress applied to the resin is removed to restore the resin to its original size. Therefore, for example, even if the size of the copper foil is 1 mm, the size of the FPC becomes larger than 1 mm when the resin is enlarged to the original size after etching, so that the dimensional stability of the FPC is lowered, and it is difficult to form a target shape. Or the case of a circuit of size.
由此種情況已知於與樹脂積層之CCL製作前事先使銅箔再結晶之技術(專利文獻1)。又,亦已知改良樹脂之組 成從而提高樹脂本身之尺寸穩定性之技術(專利文獻2)。In this case, a technique of recrystallizing the copper foil before the production of the CCL laminated with the resin is known (Patent Document 1). Also, a group of improved resins is also known. A technique for increasing the dimensional stability of the resin itself (Patent Document 2).
專利文獻1:日本特開2005-138310號公報Patent Document 1: Japanese Laid-Open Patent Publication No. 2005-138310
專利文獻2:日本特開2008-290302號公報Patent Document 2: Japanese Laid-Open Patent Publication No. 2008-290302
然而,於專利文獻1所記載之技術之情形時,若事先再結晶則銅箔之強度會降低,且容易產生與樹脂積層時之輥表面之轉印或異物之壓入等而於銅箔產生不良部。又,另外必需有事先將銅箔進行退火之設備,設備負擔增大。However, in the case of the technique described in Patent Document 1, if the crystal is recrystallized in advance, the strength of the copper foil is lowered, and the transfer of the surface of the roll when the resin is laminated or the press-fitting of foreign matter is likely to occur in the copper foil. Bad department. In addition, it is necessary to have a device for annealing the copper foil in advance, and the burden on the device is increased.
又,於專利文獻2所記載之技術之情形時,由於限定於特殊之樹脂,因此無法根據FPC之用途選擇具有適當之特性之樹脂,應用範圍狹窄,並且涉及到成本增加。Further, in the case of the technique described in Patent Document 2, since it is limited to a special resin, it is not possible to select a resin having an appropriate property depending on the use of the FPC, and the application range is narrow, and the cost is involved.
即,本發明係為了解決上述課題而完成者,其目的在於提供一種再結晶前後之尺寸變化較小,且尺寸變化之異向性較小之壓延銅箔。That is, the present invention has been made to solve the above problems, and an object of the invention is to provide a rolled copper foil which has a small dimensional change before and after recrystallization and which has a small anisotropy in dimensional change.
本發明者等人進行了各種研究,結果發現藉由調整最終冷壓延中每個道次之加工度,再結晶前後之尺寸變化會變小。The inventors of the present invention conducted various studies and found that the dimensional change before and after recrystallization is reduced by adjusting the degree of processing of each pass in the final cold rolling.
為了達成上述目的,本發明之壓延銅箔之以350℃退火30分鐘前後之尺寸變化率於壓延平行方向與壓延直角方向上均為0~0.01%。In order to achieve the above object, the dimensional change rate of the rolled copper foil of the present invention before and after annealing at 350 ° C for 30 minutes is 0 to 0.01% in the direction parallel to the rolling direction and the direction perpendicular to the rolling direction.
較佳為於上述以350℃退火30分鐘前,再結晶組織之面積率為未達50%(包含0%),且於上述以350℃退火30分鐘後,再結晶組織之面積率為50%以上。Preferably, the area ratio of the recrystallized structure is less than 50% (including 0%) before annealing at 350 ° C for 30 minutes, and the area ratio of the recrystallized structure is 50% after annealing at 350 ° C for 30 minutes. the above.
自上述以350℃退火30分鐘前之壓延平行剖面觀察, 自銅箔表面於厚度方向上橫切深度為1μm之線而到達該表面之剪切帶之條數較佳為以表背面之合計值計為0.1條/μm以下。From the above-mentioned calendered parallel section observed at 350 ° C for 30 minutes, The number of the shear bands reaching the surface from the surface of the copper foil in the thickness direction is 1 μm, and the number of the shear bands reaching the surface is preferably 0.1 strip/μm or less based on the total of the front and back surfaces.
於上述最終冷壓延中,較佳為最終5道次中存在加工度高於前道次之道次,該5道次中任一道次之最大加工度超過40%,且最終道次中之加工度成為上述5道次中最小。In the above final cold rolling, it is preferred that the processing degree is higher than the previous pass in the final 5 passes, and the maximum processing degree of any of the 5 passes exceeds 40%, and the processing in the final pass is performed. Degree is the smallest of the above 5 passes.
較佳為將鑄塊進行熱壓延後,重複進行冷壓延與退火,最後進行最終冷壓延而製造,該最終冷壓延之總加工度為98.5%以下。Preferably, after the ingot is subjected to hot rolling, the cold rolling and annealing are repeated, and finally, the final cold rolling is performed, and the total degree of the final cold rolling is 98.5% or less.
根據本發明,可獲得再結晶前後之尺寸變化較小,且尺寸變化之異向性較小之壓延銅箔。According to the present invention, a rolled copper foil having a small dimensional change before and after recrystallization and a small anisotropy of dimensional change can be obtained.
以下,對本發明之實施形態之壓延銅箔進行說明。再者,於本發明中所謂%只要事先未特別說明,即視為表示質量%。Hereinafter, the rolled copper foil according to the embodiment of the present invention will be described. In addition, in the present invention, the % is considered to represent the mass % unless otherwise specified.
本發明之壓延銅箔之以350℃退火30分鐘前後之尺寸變化率於壓延平行方向與壓延直角方向上均為0~0.01%。尺寸變化係由於再結晶而產生。藉由FPC製造步驟中之熱處理而銅箔再結晶,因此若模擬該熱處理之以350℃退火30分鐘前後之尺寸變化較小,則FPC之尺寸穩定性提高。再者,以350℃加熱30分鐘係模擬於壓延銅箔上積層樹脂之步驟者。The dimensional change rate of the rolled copper foil of the present invention before and after annealing at 350 ° C for 30 minutes is 0 to 0.01% in the direction parallel to the rolling direction and the direction perpendicular to the rolling direction. The dimensional change is due to recrystallization. The copper foil is recrystallized by the heat treatment in the FPC manufacturing step. Therefore, if the dimensional change before and after annealing at 350 ° C for 30 minutes is small, the dimensional stability of the FPC is improved. Further, heating at 350 ° C for 30 minutes simulates the step of laminating the resin on the copper foil.
作為銅箔之成分組成,可較佳地使用JIS-H3100(合金編號C1100)所規定之精銅(TPC,Tough-pitch Copper)或JIS-H3100(合金編號C1020)無氧銅(OFC,Oxygen Free Copper)。As a component composition of the copper foil, copper (TPC, Tough-pitch Copper) or JIS-H3100 (alloy No. C1020) oxygen-free copper (OFC, Oxygen Free) prescribed by JIS-H3100 (alloy No. C1100) can be preferably used. Copper).
又,相對於上述精銅或無氧銅,亦可含有合計為20~1500質量ppm之選自由Ag、Sn、In、Ti、Zn、Zr、Fe、P、Ni、Si、Te、Cr、Nb及V所組成之群中之一種以上作為添加元素,更佳為可含有20~1000質量ppm。例如,相對於上述精銅或無氧銅,可含有10~500質量ppm之Sn、及/或10~500質量ppm之Ag作為添加元素。Further, the copper or oxygen-free copper may be contained in a total amount of 20 to 1500 ppm by mass selected from the group consisting of Ag, Sn, In, Ti, Zn, Zr, Fe, P, Ni, Si, Te, Cr, and Nb. One or more of the groups composed of V and V are more preferably contained in an amount of 20 to 1000 ppm by mass. For example, it may contain 10 to 500 ppm by mass of Sn, and/or 10 to 500 ppm by mass of Ag as an additive element with respect to the above-mentioned refined copper or oxygen-free copper.
若上述元素之合計含量未達20質量ppm,則有軟化溫度較低,於常溫下之保管性降低之情形。又,若上述元素之合計含量超過1000質量ppm,則有於以350℃退火30分鐘後,難以使壓延銅箔之再結晶組織之面積率成為50%以上,壓延銅箔之尺寸變化率超過0.01%而變大之情形。When the total content of the above elements is less than 20 ppm by mass, the softening temperature is low and the storage property at normal temperature is lowered. In addition, when the total content of the above elements exceeds 1000 ppm by mass, it is difficult to make the area ratio of the recrystallized structure of the rolled copper foil 50% or more after annealing at 350 ° C for 30 minutes, and the dimensional change ratio of the rolled copper foil exceeds 0.01. % is getting bigger.
再者,由於多數情況下用於FPC之壓延銅箔要求彎曲性,因此壓延銅箔之厚度較佳為20μm以下。又,壓延銅箔之厚度之下限並無特別限定,但若考慮到製造性等,壓延銅箔之厚度較佳為4μm以上,更佳為5μm以上,進而較佳為6μm以上。Further, since the rolled copper foil for FPC is required to have flexibility in many cases, the thickness of the rolled copper foil is preferably 20 μm or less. Further, the lower limit of the thickness of the rolled copper foil is not particularly limited. However, the thickness of the rolled copper foil is preferably 4 μm or more, more preferably 5 μm or more, and still more preferably 6 μm or more in consideration of manufacturability and the like.
於上述以350℃退火30分鐘後,再結晶組織之面積率較佳為50%以上,更佳為70%以上,進而較佳為80%以上,進而更佳為90%以上。尺寸變化係由於再結晶而產生,因 此若以350℃退火30分鐘後不進行再結晶,則無尺寸變化。然而,若於上述以350℃退火30分鐘後,再結晶組織之面積率未達50%,則有無法獲得銅箔之彎曲性,無法具備作為CCL所要求之特性之情況。After annealing at 350 ° C for 30 minutes, the area ratio of the recrystallized structure is preferably 50% or more, more preferably 70% or more, further preferably 80% or more, and still more preferably 90% or more. The dimensional change is due to recrystallization, because If it is not recrystallized after annealing at 350 ° C for 30 minutes, there is no dimensional change. However, if the area ratio of the recrystallized structure is less than 50% after annealing at 350 ° C for 30 minutes, the bendability of the copper foil may not be obtained, and the characteristics required as CCL may not be obtained.
又,若於以350℃退火30分鐘之前事先使用再結晶組織之面積率為50%以上之壓延銅箔,則存在由於壓延銅箔之強度較低而難以使用之情形。因此,於以350℃退火30分鐘前,再結晶組織之面積率較佳為未達50%(包含0%),更佳為未達30%(包含0%),進而較佳為未達20%(包含0%),進而更佳為未達10%(包含0%)。In addition, when the rolled copper foil having an area ratio of the recrystallized structure of 50% or more before annealing at 350 ° C for 30 minutes is used, the strength of the rolled copper foil is low and it is difficult to use. Therefore, before annealing at 350 ° C for 30 minutes, the area ratio of the recrystallized structure is preferably less than 50% (including 0%), more preferably less than 30% (including 0%), and even more preferably less than 20%. % (including 0%), and more preferably less than 10% (including 0%).
再者,通常,若使以350℃退火30分鐘前之再結晶組織之面積率為未達50%之壓延銅箔以350℃退火30分鐘而再結晶組織之面積率為50%以上,則壓延銅箔之尺寸變化率超過0.01%而變大。Further, in general, when the rolled copper foil having an area ratio of the recrystallized structure before annealing at 350 ° C for 30 minutes is annealed at 350 ° C for 30 minutes and the area ratio of the recrystallized structure is 50% or more, calendering is performed. The dimensional change rate of the copper foil becomes larger than 0.01%.
因此,藉由如下述般調整最終冷壓延中每個道次之加工度,再結晶前後之尺寸變化於壓延平行方向與壓延直角方向上均成為0~0.01%,且尺寸變化之異向性變小。Therefore, by adjusting the degree of processing of each pass in the final cold rolling as described below, the dimensional change before and after recrystallization becomes 0 to 0.01% in the direction parallel to the rolling direction and the direction perpendicular to the rolling, and the anisotropy of the dimensional change small.
再者,再結晶組織之面積率係將銅箔表面進行電解研磨,將SEM(Scanning Electron Microscope,掃描式電子顯微鏡)圖像中由清楚之晶界所包圍之結晶粒視為再結晶粒,藉由圖像分析算出再結晶粒於觀察面積中所占之面積率(%)。圖像分析使用市售之圖像分析軟體即可。又,將觀察視野設為500μm×500μm以上。Further, the area ratio of the recrystallized structure is electrolytically polished on the surface of the copper foil, and the crystal grains surrounded by the clear grain boundary in the SEM (Scanning Electron Microscope) image are regarded as recrystallized grains. The area ratio (%) of the recrystallized grains in the observed area was calculated from image analysis. Image analysis uses commercially available image analysis software. Further, the observation field of view is set to 500 μm × 500 μm or more.
又,如即便以350℃退火30分鐘亦未再結晶之耐熱性 極高之銅箔缺乏彎曲性,有不適於CCL用途之傾向,因此本發明中規定以350℃退火30分鐘後再結晶率為50%以上為較佳者。Moreover, if it is annealed at 350 ° C for 30 minutes, it does not recrystallize. The extremely high copper foil lacks flexibility and is not suitable for CCL use. Therefore, in the present invention, it is preferable to anneal at 350 ° C for 30 minutes and then have a recrystallization ratio of 50% or more.
自上述以350℃退火30分鐘前之壓延平行剖面觀察,自銅箔表面於厚度方向上橫切深度為1μm之線而到達該表面之剪切帶較佳為表背面一併為0.1條/μm以下。From the above-mentioned calendering parallel cross section before annealing at 350 ° C for 30 minutes, the shearing tape reaching the surface from the surface of the copper foil in the thickness direction is preferably 1 line/μm. the following.
若金屬材料被壓延加工則會引起滑動變形,但若由於高加工度而變形,則會產生由塑性不穩定所引起之不均勻變形,從而產生剪切帶。所謂剪切帶係指相對於壓延板面傾斜30~60度之較薄之面狀組織(例如「鐵與鋼」第70年(1984)第15號P.18)。剪切帶具有與周圍之母相大致類似之晶體方位,但具有緊密之胞組織,容易引起再結晶核生成。因此,剪切帶發展之材料中,於剪切帶部與母相再結晶會不均勻地產生,其結果再結晶織構之發展受到妨礙。又,由於剪切帶係於壓延平行方向上以橫切銅箔厚度之方式發展,因此於壓延平行方向與壓延直角中會產生異向性。因此,藉由將剪切帶減少為0.1條/μm以下,可減小異向性。If the metal material is subjected to calendering, it will cause sliding deformation. However, if it is deformed due to high workability, uneven deformation due to plastic instability will occur, and a shear band will be generated. The shear band refers to a thin planar structure that is inclined by 30 to 60 degrees with respect to the surface of the rolled plate (for example, "Iron and Steel" 70th (1984) No. 15 P.18). The shear band has a crystal orientation that is substantially similar to the surrounding mother phase, but has a tight cell structure that tends to cause recrystallization nucleation. Therefore, in the material developed by the shear band, recrystallization of the shear band portion and the parent phase occurs unevenly, and as a result, the development of the recrystallization texture is hindered. Further, since the shear band is developed in the direction parallel to the rolling to cross the thickness of the copper foil, anisotropy occurs in the parallel direction of rolling and the right angle of rolling. Therefore, the anisotropy can be reduced by reducing the shear band to 0.1 strips/μm or less.
作為使剪切帶為0.1條/μm以下之方法,可列舉下述方法:使下述最終冷壓延之最終5道次中存在加工度高於前道次之道次,且將最終道次中之加工度設為最終5道次中最小。As a method of making the shear band 0.1 strip/μm or less, the following method may be mentioned: the processing degree is higher than the previous pass in the final 5 passes of the final cold rolling described below, and the final pass is performed. The degree of processing is set to be the smallest of the final 5 passes.
剪切帶之測定係如圖1所示般,將銅箔之壓延平行方向RD之剖面R進行研磨,使RD方向之視野寬度W=200μm以上,決定將銅箔之厚度t作為高度之觀察視野V,獲得掃描式電子顯微鏡(SEM)之圖像。並且,將自銅箔表面於厚度方向上橫切深度為1μm之線C而到達銅箔表面之剪切帶Sh之條數除以RD方向之視野寬度W所得者作為剪切帶之條數(條/μm)。又,由於可自銅箔之表背面分別引出線C,因此將剪切帶之條數設為對銅箔之表背分別測定之值之合計值。The measurement of the shear band is performed by polishing the cross section R of the copper foil in the parallel direction RD, and the width of the field of view RD in the RD direction is W=200 μm or more, and the thickness t of the copper foil is determined as the observation field of the height. V, an image of a scanning electron microscope (SEM) was obtained. Further, the number of the shear bands Sh reaching the surface of the copper foil from the line C of the surface of the copper foil in the thickness direction by 1 μm is divided by the width W of the field of view in the RD direction as the number of shear bands ( Bar / μm). Further, since the line C can be drawn from the front and back sides of the copper foil, the number of the shear bands is set to the total value of the values measured on the front and back of the copper foil.
再者,明顯之剪切帶Sh係一端到達銅箔表面,另一端與線C交叉之線,此外之剪切帶(未到達至銅箔表面或未與線C交叉之剪切帶)由於對再結晶織構發展之影響較小,因此於本發明中不作為剪切帶計數。Furthermore, it is obvious that the shear band has one end of the Sh line reaching the surface of the copper foil, the other end intersecting the line C, and the shear band (the shear band that does not reach the surface of the copper foil or intersects with the line C) The influence of the development of the recrystallized texture is small, so it is not counted as a shear band in the present invention.
剪切帶係因強加工所引起之塑性不穩定而於相對於壓延面傾斜30~60度之面上剪切變形集中地產生而形成之組織顯現於觀察面上者。因此,剪切帶被作為壓延組織之不連續面觀察。由於剪切帶部之晶體方位與母相無差別,因此無法藉由晶體方位測定規定剪切帶。另一方面,由於剪切帶於深度方向上擴展,因此可觀察材料之剖面而進行確定。因此,觀察最終壓延後之銅箔之壓延平行方向之剖面時,將相對於壓延面傾斜30~60度之壓延組織之不連續部分作為剪切帶。具體而言,獲得上述剖面之顯微鏡(金屬顯微鏡、掃描式電子顯微鏡(SEM)、掃描式離子顯微鏡(SIM,Scanning Ion Microscope)等)之圖像,可藉由圖 像分析或目視將相對於壓延面傾斜30~60度之線判定為剪切帶。銅箔之剖面加工較佳為藉由FIB(Focused Ion Beam,聚焦離子束)或CP(Cross-section Polisher,離子束剖面研磨儀)進行,但亦可使用機械研磨等方法。The shear band is formed by the shear deformation of the surface which is inclined by 30 to 60 degrees with respect to the rolling surface due to the plastic instability caused by the strong processing, and the formed structure appears on the observation surface. Therefore, the shear band is observed as a discontinuous surface of the calendered structure. Since the crystal orientation of the shear band portion is not different from that of the parent phase, the shear band cannot be specified by the crystal orientation measurement. On the other hand, since the shear band is expanded in the depth direction, the cross section of the material can be observed and determined. Therefore, when the cross section of the copper foil after the final rolling is parallelized in the parallel direction, the discontinuous portion of the rolled structure inclined by 30 to 60 degrees with respect to the rolling surface is used as a shear band. Specifically, an image of a microscope (a metal microscope, a scanning electron microscope (SEM), a scanning ion microscope (SIM), or the like) that obtains the above cross section can be obtained by A line which is inclined by 30 to 60 degrees with respect to the rolling surface is determined as a shear band by analysis or visual observation. The cross-sectional processing of the copper foil is preferably performed by FIB (Focused Ion Beam) or CP (Cross-section Polisher), but methods such as mechanical polishing may also be used.
圖2表示自壓延平行方向之剖面觀察時之組織之SEM圖像。於該圖中,連結符號Sh所表示之2個箭頭之線係橫切線C而到達銅箔表面之剪切帶。又,白色箭頭係未到達線C之剪切帶。Fig. 2 shows an SEM image of the structure when viewed from a cross section in the direction parallel to the calendering. In the figure, the line connecting the two arrows indicated by the symbol Sh is a shear line that crosses the line C and reaches the surface of the copper foil. Further, the white arrow is a shear band that does not reach the line C.
繼而,對本發明之壓延銅箔之製造方法之一例進行說明。首先,將由銅及必需之合金元素,進而為不可避雜質所構成之鑄塊進行熱壓延後,重複進行冷壓延與退火,最後藉由最終冷壓延製成特定厚度。Next, an example of a method for producing a rolled copper foil of the present invention will be described. First, an ingot composed of copper and a necessary alloying element, and further an inevitable impurity, is subjected to hot rolling, and then cold rolling and annealing are repeated, and finally, a specific thickness is formed by final cold rolling.
此處,較佳為將最終冷壓延之總加工度設為98.5%以下,更佳為98.3%以下。又,最終冷壓延之總加工度較佳為90%以上,更佳為95%以上。進而於最終冷壓延中,以如下方式進行設定:於最終5道次中存在加工度高於前道次之道次,該5道次中除最終道次外之任一道次之最大加工度為40%以上,且最終道次中之加工度成為上述5道次中最小。Here, the total degree of work of the final cold rolling is preferably 98.5% or less, more preferably 98.3% or less. Further, the total degree of processing of the final cold rolling is preferably 90% or more, more preferably 95% or more. Further, in the final cold rolling, the setting is performed in the following manner: in the final 5 passes, the processing degree is higher than the previous pass, and the maximum processing degree of any of the 5 passes except the final pass is More than 40%, and the processing degree in the final pass is the smallest of the above 5 passes.
以此方式將最終冷壓延之總加工度設為98.5%以下,藉此可抑制剪切帶之發展。又,於最終5道次中存在加工度高於前道次之道次,且將除最終道次外之任一道次之最大加工度設為40%以上,藉此可使銅箔於厚度方向上均勻地變形而抑制局部性之變形,可防止剪切帶之發展。又,藉 由以較低之加工度壓延最終道次,可抑制於材料表面產生剪切加工層,可降低材料特性(尺寸變化)之異向性。In this way, the total degree of final cold rolling is set to 98.5% or less, whereby the development of the shear band can be suppressed. Moreover, in the final 5 passes, the degree of processing is higher than that of the previous pass, and the maximum degree of processing of any pass except the final pass is set to 40% or more, thereby making the copper foil in the thickness direction. The deformation is uniformly deformed to suppress local deformation, and the development of the shear band can be prevented. Also borrow By rolling the final pass at a lower degree of processing, it is possible to suppress the occurrence of a sheared working layer on the surface of the material, and to reduce the anisotropy of the material properties (size change).
再者,若最終壓延之總加工度未達90%,則於以350℃退火30分鐘前壓延銅箔之再結晶組織之面積率未達50%之情形時,難以使以350℃退火30分鐘後之壓延銅箔之再結晶組織之面積率成為50%以上。Furthermore, if the total degree of processing of the final calendering is less than 90%, it is difficult to anneal at 350 ° C for 30 minutes when the area ratio of the recrystallized structure of the rolled copper foil is less than 50% before annealing at 350 ° C for 30 minutes. The area ratio of the recrystallized structure of the rolled copper foil thereafter is 50% or more.
對JIS-H3100(合金編號C1100)所規定之精銅(TPC)或JIS-H3100(合金編號C1020)無氧銅(OFC)添加表1所記載之元素而鑄造鑄錠。將所製作之鑄錠以800℃以上之溫度進行熱壓延至厚度10mm,將表面之氧化皮(oxidized scale)面切削後,重複進行冷壓延與退火,其後進而藉由最終冷壓延製成厚度0.006~0.017mm。再者,實施例1、3、5、7~9、11~15、比較例1~3將厚度設為0.012mm,實施例2將厚度設為0.006mm,實施例4將厚度設為0.017mm,實施例6將厚度設為0.009mm。The ingot was cast by adding the elements described in Table 1 to the refined copper (TPC) or JIS-H3100 (alloy No. C1020) oxygen-free copper (OFC) prescribed by JIS-H3100 (alloy No. C1100). The ingot to be produced is hot-rolled to a thickness of 10 mm at a temperature of 800 ° C or higher, and after the surface of the oxidized scale is cut, the cold rolling and annealing are repeated, and then the thickness is finally formed by final cold rolling. 0.006~0.017mm. Further, Examples 1, 3, 5, 7 to 9, 11 to 15, and Comparative Examples 1 to 3 have a thickness of 0.012 mm, Example 2 has a thickness of 0.006 mm, and Example 4 has a thickness of 0.017 mm. In Example 6, the thickness was set to 0.009 mm.
再者,最終冷壓延係藉由10~15道次而進行,將最終冷壓延之總加工度設為表1中所示之值。又,將最終冷壓延之最終5道次之各加工度設為表1中所示之值。加工度係藉由下式求出。Furthermore, the final cold rolling was carried out by 10 to 15 passes, and the total degree of final cold rolling was set to the value shown in Table 1. Further, the respective processing degrees of the final 5 passes of the final cold rolling were set to the values shown in Table 1. The degree of processing is obtained by the following formula.
(加工度)={(壓延前厚度)-(壓延後厚度)}/(壓延前厚度)×100(%)(Processing degree) = {(thickness before rolling) - (thickness after rolling)} / (thickness before rolling) × 100 (%)
又,實施例9係於最終冷壓延後以350℃進行30分鐘加熱。實施例15係於最終冷壓延後以100℃進行5小時加 熱。Further, Example 9 was heated at 350 ° C for 30 minutes after the final cold rolling. Example 15 was carried out at 100 ° C for 5 hours after the final cold rolling. heat.
對以此方式所獲得之各銅箔試樣進行諸特性之評價。Each of the copper foil samples obtained in this manner was evaluated for various characteristics.
(1)尺寸變化率(1) Dimensional change rate
將各銅箔試樣切割為寬15mm、長120mm之短條狀,空出100mm之間隔標記2處標點。測定標點間距離L0之後,將銅箔於Ar氣流環境中以350℃退火30分鐘,測定退火後之標點間距離L。尺寸變化率(熱伸縮率)為藉由下式求出之值之絕對值。再者,由於銅箔試樣於退火後會收縮,因此尺寸變化率之值均為負。Each copper foil sample was cut into strips having a width of 15 mm and a length of 120 mm, and the interval of 100 mm was marked with two punctuation marks. After the distance L0 between the punctuation points was measured, the copper foil was annealed at 350 ° C for 30 minutes in an Ar gas flow environment, and the distance L between the punctures after annealing was measured. The dimensional change rate (thermal expansion ratio) is an absolute value of a value obtained by the following formula. Furthermore, since the copper foil sample shrinks after annealing, the value of the dimensional change rate is negative.
(尺寸變化率)=|{(L-L0)/L0}×100(%)|(Dimensional change rate)=|{(L-L0)/L0}×100(%)|
(2)再結晶組織之面積率(2) Area ratio of recrystallized structure
對於所獲得之試樣,以350℃退火30分鐘前與以350℃退火30分鐘後,將試樣表面進行電解研磨,將SEM(掃描式電子顯微鏡)圖像中由清楚之晶界所包圍之結晶粒視為再結晶粒,藉由圖像分析算出再結晶粒於觀察面積中所占之面積率。再者,關於實施例9,並非於最終冷壓延後所進行之以350℃加熱30分鐘之前後,而是對其後以350℃進行30分鐘退火之前後,測定再結晶粒之面積率。圖像分析係使用市售之圖像分析軟體(軟體名「ImageNos」,可藉由以下網站獲得之免費軟體)進行二值化。For the obtained sample, after annealing at 350 ° C for 30 minutes and annealing at 350 ° C for 30 minutes, the surface of the sample was subjected to electrolytic polishing, and the SEM (Scanning Electron Microscope) image was surrounded by a clear grain boundary. The crystal grains were regarded as recrystallized grains, and the area ratio of the recrystallized grains in the observation area was calculated by image analysis. Further, in Example 9, the area ratio of the recrystallized grains was measured not after the final heating at 350 ° C for 30 minutes, but after annealing at 350 ° C for 30 minutes. The image analysis system uses a commercially available image analysis software (software name "ImageNos", which can be binarized by the free software available on the following website).
http://www.geocities.jp/baruth0/software.htmlHttp://www.geocities.jp/baruth0/software.html
http://www.vector.co.jp/soft/win95/art/se065425.htmlHttp://www.vector.co.jp/soft/win95/art/se065425.html
進而,使用市售之軟體(軟體名「PixelCounter s」,可藉由以下網站獲得之免費軟體)算出面積率。Further, the area ratio is calculated using a commercially available software (software name "PixelCounter s", which can be obtained by the free software available on the following website).
http://www.vector.co.jp/soft/win95/art/se385899.htmlHttp://www.vector.co.jp/soft/win95/art/se385899.html
又,將觀察視野設為500μm×500μm以上。再結晶組織之面積率藉由下式求出。Further, the observation field of view is set to 500 μm × 500 μm or more. The area ratio of the recrystallized structure was determined by the following formula.
(再結晶組織之面積率)=(再結晶粒之面積)/(觀察視野之面積)×100(%)(area ratio of recrystallized structure) = (area of recrystallized grains) / (area of observation field) × 100 (%)
(3)剪切帶之條數(表背面之合計值)(頻度)(3) Number of shear bands (total value of the back of the watch) (frequency)
如圖1所示般,將上述以350℃退火30分鐘之前之試樣之壓延平行RD之剖面R進行研磨(機械研磨或CP(離子束剖面研磨法)),使RD方向之視野寬度W=200μm以上,決定將銅箔之厚度t作為高度之觀察視野V,獲得掃描式電子顯微鏡(SEM)之圖像。並且,將自銅箔表面於厚度方向上橫切深度為1μm之線C而到達銅箔表面之剪切帶Sh之條數除以RD方向之視野寬度W所得者作為剪切帶之條數(條/μm)而以目視計數。再者,關於實施例9,對於最終冷壓延後以350℃加熱30分鐘直後之銅箔試樣(即,關於實施例9,於最終冷壓延後以350℃加熱30分鐘之後,進而進行第2次以350℃退火30分鐘,但此係指第1次以350℃加熱30分鐘直後),與上述同樣地測定剪切帶之條數。As shown in Fig. 1, the sample R before the annealing at 350 ° C for 30 minutes is subjected to grinding (mechanical polishing or CP (ion beam section polishing)), and the width of the field of view in the RD direction is W = Above 200 μm, the thickness t of the copper foil was determined as the observation field of view V of the height, and an image of a scanning electron microscope (SEM) was obtained. Further, the number of the shear bands Sh reaching the surface of the copper foil from the line C of the surface of the copper foil in the thickness direction by 1 μm is divided by the width W of the field of view in the RD direction as the number of shear bands ( Bars / μm) and counted by visual inspection. Further, regarding Example 9, a copper foil sample which was heated at 350 ° C for 30 minutes after the final cold rolling (that is, with respect to Example 9, after heating at 350 ° C for 30 minutes after the final cold rolling, further proceeded to the second The film was annealed at 350 ° C for 30 minutes, but this was the first time after heating at 350 ° C for 30 minutes, and the number of shear bands was measured in the same manner as above.
再者,自銅箔之表背面分別引出線C,對銅箔之表背面分別測定剪切帶之條數,藉由{(表面之剪切帶之條數)+(背面之剪切帶之條數)}÷RD方向之視野寬度W求出剪切帶之條數。Furthermore, the line C is drawn from the back surface of the copper foil, and the number of shear bands is measured on the front and back sides of the copper foil, respectively, by {(the number of shear bands on the surface) + (the shear band on the back side) The number of strips)} ÷ RD direction of the field of view width W to find the number of strips.
(4)彎曲性(4) Flexibility
將試樣以350℃加熱30分鐘而使其再結晶後,利用圖3所示之彎曲試驗裝置,進行彎曲疲勞壽命之測定。該裝置為於振盪驅動體4結合有振動傳遞構件3之結構,被試驗銅箔1以箭頭所示之螺釘2之部分與振動傳遞構件3之前端部之共計4點被固定於裝置。若振動傳遞構件3上下驅動,則銅箔1之中間部以特定之曲率半徑r彎曲成髮夾狀。本試驗中,求出於以下之條件下重複進行彎曲時之直至斷裂之次數。After the sample was heated at 350 ° C for 30 minutes to recrystallize, the bending fatigue life was measured by the bending test apparatus shown in FIG. 3 . This device has a structure in which the vibration transmitting member 3 is coupled to the oscillation driving body 4, and the portion of the screw 2 to be tested indicated by the arrow and the front end portion of the vibration transmitting member 3 are fixed to the device at four points. When the vibration transmission member 3 is driven up and down, the intermediate portion of the copper foil 1 is bent into a hairpin shape with a specific radius of curvature r. In this test, the number of times until the fracture was repeated under the following conditions was determined.
再者,於板厚為0.012mm之情形時,試驗條件為如下所述:試驗片寬度:12.7mm,試驗片長度:200mm,試驗片採取方向:以試驗片之長度方向與壓延方向平行之方式進行採取,曲率半徑r:2.5mm、振動行程:25mm,振動速度:1500次/分鐘。再者,於彎曲疲勞壽命為3萬次以上之情形時,判斷為具有優異之彎曲性,設為「○」。又,於彎曲疲勞壽命為未達3萬次之情形時,將彎曲性設為「×」。Further, in the case where the sheet thickness is 0.012 mm, the test conditions are as follows: test piece width: 12.7 mm, test piece length: 200 mm, test piece taking direction: in the manner that the length direction of the test piece is parallel to the rolling direction Taken, radius of curvature r: 2.5 mm, vibration stroke: 25 mm, vibration speed: 1500 times / minute. In addition, when the bending fatigue life was 30,000 or more, it was judged that the bending property was excellent, and it was set to "○". Moreover, when the bending fatigue life is less than 30,000 times, the bending property is set to "x".
又,於板厚分別為0.017mm、0.009mm、0.006mm之情形時,為使彎曲形變與板厚為0.012mm之情形之彎曲試驗相同,將曲率半徑r分別變更為3.8mm、2mm、1.3mm,但其他試驗條件設為相同。Further, in the case where the sheet thicknesses are 0.017 mm, 0.009 mm, and 0.006 mm, respectively, the curvature radius r is changed to 3.8 mm, 2 mm, and 1.3 mm, respectively, so that the bending deformation is the same as the bending test in the case where the thickness is 0.012 mm. , but other test conditions are set to the same.
(5)通箔性(5) foilability
將聚醯亞胺樹脂於銅箔表面塗佈乾燥之後以200℃加熱30分鐘,藉由澆鑄法製作CCL積層板。以目視觀察所獲得之CCL遍及100m之長度。將於CCL存在長度10cm以上之褶皺之情形設為「×」,將不存在長度10cm以上之褶 皺之情形設為「○」。The polyimine resin was coated and dried on the surface of the copper foil, and then heated at 200 ° C for 30 minutes to prepare a CCL laminate by a casting method. The CCL obtained was visually observed to be 100 m in length. In the case where the CCL has a wrinkle having a length of 10 cm or more, it is set to "X", and there will be no pleats having a length of 10 cm or more. The wrinkle situation is set to "○".
將所獲得之結果示於表1中。再者,表1之組成之欄之「190 ppmAg-TPC」意指於JIS-H3100(合金編號C1100)之精銅(TPC)添加有190 wtppm之Ag。又,表1之組成之欄之「80 ppmSn-OFC」意指於JIS-H3100(合金編號C1020)之無氧銅(OFC)添加有80 wtppm之Sn。The results obtained are shown in Table 1. Further, "190 ppm Ag-TPC" in the column of the composition of Table 1 means that 190 wtppm of Ag was added to the refined copper (TPC) of JIS-H3100 (alloy No. C1100). Further, "80 ppmSn-OFC" in the column of the composition of Table 1 means that 80 wtppm of Sn is added to the oxygen-free copper (OFC) of JIS-H3100 (alloy No. C1020).
由表1可知,於各實施例之情形中,以350℃退火30分鐘前後之尺寸變化率為於壓延平行方向與壓延直角方向上均為0~0.01%。又,於除實施例9外之各實施例之情形時,以350℃退火30分鐘前再結晶組織之面積率未達50%,通箔性優異。於除實施例7、8外之各實施例之情形時,以350℃退火30分鐘後之再結晶組織之面積率為50%以上,彎曲性優異。進而,於各實施例之情形中,自以350℃退火30分鐘前之壓延平行剖面觀察,橫切線C而到達表面之剪切帶為0.1條/μm以下。As can be seen from Table 1, in the case of each of the examples, the dimensional change rate before and after annealing at 350 ° C for 30 minutes was 0 to 0.01% in both the rolling parallel direction and the rolling orthogonal direction. Further, in the case of each of the examples except the example 9, the area ratio of the recrystallized structure before annealing at 350 ° C for 30 minutes was less than 50%, and the foil-passing property was excellent. In the case of each of the examples except the examples 7 and 8, the area ratio of the recrystallized structure after annealing at 350 ° C for 30 minutes was 50% or more, and the flexibility was excellent. Further, in the case of each of the examples, the shearing band which reached the surface by transverse line C was 0.1 strip/μm or less as observed from the rolling parallel section before annealing at 350 ° C for 30 minutes.
再者,於添加元素之濃度超過1000 ppm之實施例7之情形時,以350℃退火30分鐘後未再結晶,以350℃退火30分鐘後之再結晶組織之面積率未達50%,無法獲得作為FPC所必需之彎曲性。但是,於用於不要求較高之彎曲性之FPC用途(用於LED用之基材之FPC或用於液晶顯示器之FPC,折曲一次而使用,不重複彎曲)等之情形時,於實用上無問題。Further, in the case of Example 7 in which the concentration of the additive element exceeds 1000 ppm, it is not recrystallized after annealing at 350 ° C for 30 minutes, and the area ratio of the recrystallized structure after annealing at 350 ° C for 30 minutes is less than 50%. Obtain the flexibility necessary for FPC. However, it is useful in FPC applications (FPC for substrates for LEDs or FPCs for liquid crystal displays, which are used once, without repeated bending) for FPC applications that do not require high flexibility. No problem on it.
又,於最終冷壓延之總加工度未達98.5%之實施例8之情形時,以350℃退火30分鐘後亦未再結晶,以350℃退火30分鐘後之再結晶組織之面積率未達50%,無法獲得作為FPC所必需之彎曲性。但是,於用於不要求較高之彎曲性之FPC用途(用於LED用之基材之FPC或用於液晶顯示器之FPC(折曲一次而使用,不重複彎曲))等之情形時,於實用上無問題。Moreover, in the case of Example 8 in which the total degree of final cold rolling was less than 98.5%, it was not recrystallized after annealing at 350 ° C for 30 minutes, and the area ratio of the recrystallized structure after annealing at 350 ° C for 30 minutes was not reached. 50%, the bendability necessary for FPC cannot be obtained. However, when used in an FPC application (an FPC for a substrate for LEDs or an FPC for a liquid crystal display (used once, without repeated bending)), etc., There is no problem in practical use.
又,於最終冷壓延後進而進行退火之實施例9之情形 時,以350℃退火30分鐘前之面積率超過50%,澆鑄時之通箔性較差,但若減慢通箔速度則雖然生產性會降低,但於實用上無問題。Further, in the case of Example 9 which is further annealed after the final cold rolling In the case of annealing at 350 ° C for 30 minutes, the area ratio exceeds 50%, and the foilability during casting is inferior. However, if the foil speed is slowed down, the productivity is lowered, but there is no problem in practical use.
另一方面,於最終冷壓延之總加工度超過98.5%,最終冷壓延之最終5道次中之任一道次之最大加工度均未達40%之比較例1之情形時,剪切帶超過0.1條/μm,以350℃退火30分鐘前後之壓延直角方向之尺寸變化率超過0.01%。On the other hand, in the case of Comparative Example 1 in which the total degree of processing of the final cold rolling exceeds 98.5% and the maximum degree of processing of any of the final 5 passes of the final cold rolling is less than 40%, the shear band exceeds 0.1 strip/μm, the dimensional change rate of the rolling right angle direction before and after annealing at 350 ° C for 30 minutes exceeded 0.01%.
於最終冷壓延之總加工度超過98.5%,最終冷壓延之最終道次中之加工度於5道次中並非最小之比較例2之情形時,剪切帶超過0.1條/μm,以350℃退火30分鐘前後之壓延直角方向之尺寸變化率超過0.01%。再者,若剪切帶之數量較多,則壓延平行方向與直角方向之組織會產生差異,壓延直角方向之尺寸變化率尤其變大。When the total degree of processing of the final cold rolling exceeds 98.5%, and the degree of processing in the final pass of the final cold rolling is not the smallest of the 5 passes, the shear band exceeds 0.1 strip/μm to 350 ° C. The dimensional change rate in the direction perpendicular to the rolling direction after annealing for 30 minutes exceeded 0.01%. Further, if the number of the shear bands is large, the microstructure in the parallel direction and the right-angle direction of the rolling is different, and the dimensional change rate in the direction perpendicular to the rolling is particularly large.
再者,於表1中,亦表示有自銅箔表面橫切厚度方向之中心線而到達該表面之剪切帶之表背面之合計值。於比較例1~3之情形時,雖然到達至厚度方向之中心之較長之剪切帶較少,但可知存在於距銅箔表面較近之部位之剪切帶之數量變多。Further, in Table 1, the total value of the front and back surfaces of the shear band which reaches the surface from the center line of the copper foil in the thickness direction is also indicated. In the case of Comparative Examples 1 to 3, although the length of the shear band reaching the center in the thickness direction was small, it was found that the number of shear bands present in the portion closer to the surface of the copper foil increased.
於最終冷壓延中,於最終5道次中不存在加工度高於前道次之道次(即,加工度朝向最終道次單調遞減)之比較例3之情形時,剪切帶較多,尺寸變化之異向性變大。In the final cold rolling, in the case of Comparative Example 3 in which the degree of processing is higher than the previous pass (ie, the degree of processing is monotonously decreasing toward the final pass) in the final 5 passes, the shear band is more. The anisotropy of the dimensional change becomes large.
t‧‧‧銅箔之厚度T‧‧‧ Thickness of copper foil
C‧‧‧厚度方向之中心線C‧‧‧Center line of thickness direction
Sh‧‧‧剪切帶Sh‧‧‧Shear band
V‧‧‧觀察視野V‧‧‧ observation field
RD‧‧‧研磨銅箔之壓延平行方向RD‧‧‧Rolling parallel direction of ground copper foil
R‧‧‧研磨銅箔之壓延平行方向RD之剖面R‧‧‧A section of the calendered parallel direction RD of the ground copper foil
W‧‧‧RD方向之視野寬度Width of field of view in the direction of W‧‧‧RD
1‧‧‧被試驗銅箔1‧‧‧Tested copper foil
2‧‧‧螺釘2‧‧‧ screws
3‧‧‧振動傳遞構件3‧‧‧Vibration transfer member
4‧‧‧振盪驅動體4‧‧‧Oscillation driver
圖1係表示測定剪切帶之條數之方法之圖。Fig. 1 is a view showing a method of measuring the number of shear bands.
圖2係表示自壓延平行方向之剖面觀察時之組織之SEM圖像的圖。Fig. 2 is a view showing an SEM image of a structure when viewed from a cross section in a parallel direction of rolling.
圖3係表示利用彎曲試驗裝置進行彎曲疲勞壽命之測定之方法的圖。Fig. 3 is a view showing a method of measuring the bending fatigue life by a bending test device.
t‧‧‧銅箔之厚度T‧‧‧ Thickness of copper foil
C‧‧‧厚度方向之中心線C‧‧‧Center line of thickness direction
Sh‧‧‧剪切帶Sh‧‧‧Shear band
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JP2008106313A (en) * | 2006-10-26 | 2008-05-08 | Hitachi Cable Ltd | Rolled copper foil and manufacturing method therefor |
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