TWI443691B - 電感裝置 - Google Patents
電感裝置 Download PDFInfo
- Publication number
- TWI443691B TWI443691B TW097129780A TW97129780A TWI443691B TW I443691 B TWI443691 B TW I443691B TW 097129780 A TW097129780 A TW 097129780A TW 97129780 A TW97129780 A TW 97129780A TW I443691 B TWI443691 B TW I443691B
- Authority
- TW
- Taiwan
- Prior art keywords
- insulating film
- conductive member
- semiconductor substrate
- inductive device
- conductive
- Prior art date
Links
- 230000001939 inductive effect Effects 0.000 title claims description 113
- 239000004065 semiconductor Substances 0.000 claims description 154
- 239000000758 substrate Substances 0.000 claims description 129
- 230000000149 penetrating effect Effects 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 73
- 238000004519 manufacturing process Methods 0.000 description 36
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 21
- 229910052802 copper Inorganic materials 0.000 description 17
- 239000010949 copper Substances 0.000 description 17
- 239000003990 capacitor Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 16
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- 239000000463 material Substances 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 11
- 238000007747 plating Methods 0.000 description 9
- 238000009413 insulation Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000011889 copper foil Substances 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910000859 α-Fe Inorganic materials 0.000 description 4
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- BAUYGSIQEAFULO-UHFFFAOYSA-L iron(2+) sulfate (anhydrous) Chemical compound [Fe+2].[O-]S([O-])(=O)=O BAUYGSIQEAFULO-UHFFFAOYSA-L 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
- H01F41/041—Printed circuit coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/645—Inductive arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/20—Inductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F2017/0046—Printed inductances with a conductive path having a bridge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/32—Insulating of coils, windings, or parts thereof
- H01F27/323—Insulation between winding turns, between winding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
- H01F41/12—Insulating of windings
- H01F41/122—Insulating between turns or between winding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Semiconductor Integrated Circuits (AREA)
- Coils Of Transformers For General Uses (AREA)
- Coils Or Transformers For Communication (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007204325A JP5348862B2 (ja) | 2007-08-06 | 2007-08-06 | インダクタ素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200915358A TW200915358A (en) | 2009-04-01 |
| TWI443691B true TWI443691B (zh) | 2014-07-01 |
Family
ID=40345926
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097129780A TWI443691B (zh) | 2007-08-06 | 2008-08-06 | 電感裝置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7791446B2 (enExample) |
| JP (1) | JP5348862B2 (enExample) |
| KR (1) | KR101436037B1 (enExample) |
| TW (1) | TWI443691B (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8008987B2 (en) * | 2008-09-10 | 2011-08-30 | Advanced Semiconductor Engineering, Inc. | Balun circuit manufactured by integrate passive device process |
| US8049589B2 (en) * | 2008-09-10 | 2011-11-01 | Advanced Semiconductor Engineering, Inc. | Balun circuit manufactured by integrate passive device process |
| US7994873B2 (en) * | 2008-09-10 | 2011-08-09 | Advanced Semiconductor Engineering, Inc. | Balun device |
| US9190201B2 (en) * | 2009-03-04 | 2015-11-17 | Qualcomm Incorporated | Magnetic film enhanced inductor |
| WO2011033496A1 (en) * | 2009-09-16 | 2011-03-24 | Maradin Technologies Ltd. | Micro coil apparatus and manufacturing methods therefor |
| KR101179386B1 (ko) | 2010-04-08 | 2012-09-03 | 성균관대학교산학협력단 | 패키지 기판의 제조방법 |
| US8664745B2 (en) * | 2010-07-20 | 2014-03-04 | Triune Ip Llc | Integrated inductor |
| US9287344B2 (en) * | 2010-08-23 | 2016-03-15 | The Hong Kong University Of Science And Technology | Monolithic magnetic induction device |
| US8470612B2 (en) | 2010-10-07 | 2013-06-25 | Infineon Technologies Ag | Integrated circuits with magnetic core inductors and methods of fabrications thereof |
| CN103377795B (zh) * | 2012-04-24 | 2016-01-27 | 乾坤科技股份有限公司 | 电磁器件及其制作方法 |
| US8963671B2 (en) * | 2012-08-31 | 2015-02-24 | Advanced Semiconductor Engineering, Inc. | Semiconductor transformer device and method for manufacturing the same |
| JP6115147B2 (ja) | 2013-01-22 | 2017-04-19 | 富士通株式会社 | 配線基板及びその設計方法 |
| US9767957B2 (en) * | 2013-08-12 | 2017-09-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing a tunable three dimensional inductor |
| CN105244367A (zh) * | 2014-06-24 | 2016-01-13 | 日月光半导体制造股份有限公司 | 衬底结构及其制造方法 |
| KR101681200B1 (ko) | 2014-08-07 | 2016-12-01 | 주식회사 모다이노칩 | 파워 인덕터 |
| KR101686989B1 (ko) | 2014-08-07 | 2016-12-19 | 주식회사 모다이노칩 | 파워 인덕터 |
| US9607748B2 (en) * | 2014-09-03 | 2017-03-28 | Teledyne Scientific & Imaging, Llc | Micro-fabricated integrated coil and magnetic circuit and method of manufacturing thereof |
| KR101662207B1 (ko) * | 2014-09-11 | 2016-10-06 | 주식회사 모다이노칩 | 파워 인덕터 |
| JP6557468B2 (ja) * | 2014-12-25 | 2019-08-07 | ローム株式会社 | チップ部品 |
| US20170236790A1 (en) * | 2016-02-12 | 2017-08-17 | Semtech Corporation | Semiconductor Device on Leadframe with Integrated Passive Component |
| JP6838328B2 (ja) * | 2016-09-15 | 2021-03-03 | 大日本印刷株式会社 | インダクタおよびインダクタの製造方法 |
| US11094447B2 (en) | 2017-03-30 | 2021-08-17 | Rohm Co., Ltd. | Chip inductor and method for manufacturing the same |
| JP2018174306A (ja) * | 2017-03-30 | 2018-11-08 | ローム株式会社 | チップインダクタおよびその製造方法 |
| JP6908112B2 (ja) * | 2017-06-30 | 2021-07-21 | 株式会社村田製作所 | 電子部品モジュール及びその製造方法 |
| US10861840B2 (en) * | 2017-08-30 | 2020-12-08 | Advanced Semiconductor Engineering, Inc. | Integrated passive component and method for manufacturing the same |
| TWI685858B (zh) * | 2017-12-04 | 2020-02-21 | 希華晶體科技股份有限公司 | 薄型化扼流器的量產方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0729732A (ja) * | 1993-07-09 | 1995-01-31 | Fuji Electric Co Ltd | 薄膜磁気素子 |
| JPH0897375A (ja) * | 1994-07-26 | 1996-04-12 | Toshiba Corp | マイクロ波集積回路装置及びその製造方法 |
| JPH0963847A (ja) * | 1995-08-25 | 1997-03-07 | Nec Corp | インダクタ素子及びその製造方法 |
| JPH11251143A (ja) * | 1998-03-02 | 1999-09-17 | Toshiba Corp | 平面インダクタおよびその製造方法および平面コイルパターンの形成方法 |
| FR2830683A1 (fr) * | 2001-10-10 | 2003-04-11 | St Microelectronics Sa | Realisation d'inductance et de via dans un circuit monolithique |
| JP2005079286A (ja) | 2003-08-29 | 2005-03-24 | Canon Inc | インダクタ及びその製造方法 |
| JP2006173525A (ja) * | 2004-12-20 | 2006-06-29 | Sanyo Electric Co Ltd | 半導体装置 |
| TWI336922B (en) * | 2007-01-12 | 2011-02-01 | Via Tech Inc | Spiral inductor with multi-trace structure |
-
2007
- 2007-08-06 JP JP2007204325A patent/JP5348862B2/ja active Active
-
2008
- 2008-08-01 KR KR1020080075390A patent/KR101436037B1/ko active Active
- 2008-08-05 US US12/186,317 patent/US7791446B2/en active Active
- 2008-08-06 TW TW097129780A patent/TWI443691B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| US20090039999A1 (en) | 2009-02-12 |
| US7791446B2 (en) | 2010-09-07 |
| JP2009043777A (ja) | 2009-02-26 |
| KR101436037B1 (ko) | 2014-09-01 |
| TW200915358A (en) | 2009-04-01 |
| KR20090014964A (ko) | 2009-02-11 |
| JP5348862B2 (ja) | 2013-11-20 |
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