TWI442501B - Electrostatic chuck and its manufacturing method - Google Patents
Electrostatic chuck and its manufacturing method Download PDFInfo
- Publication number
- TWI442501B TWI442501B TW098110146A TW98110146A TWI442501B TW I442501 B TWI442501 B TW I442501B TW 098110146 A TW098110146 A TW 098110146A TW 98110146 A TW98110146 A TW 98110146A TW I442501 B TWI442501 B TW I442501B
- Authority
- TW
- Taiwan
- Prior art keywords
- electrostatic chuck
- layer
- concave portion
- film
- ceramic
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000000919 ceramic Substances 0.000 claims description 71
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 239000007921 spray Substances 0.000 claims description 26
- 239000012212 insulator Substances 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 239000000155 melt Substances 0.000 claims 2
- 238000002791 soaking Methods 0.000 claims 2
- 238000000034 method Methods 0.000 description 15
- 229910052782 aluminium Inorganic materials 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 14
- 239000004020 conductor Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 238000005507 spraying Methods 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 239000012768 molten material Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000289 melt material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/23—Chucks or sockets with magnetic or electrostatic means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/4998—Combined manufacture including applying or shaping of fluent material
- Y10T29/49982—Coating
- Y10T29/49986—Subsequent to metal working
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Coating By Spraying Or Casting (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008085417A JP5201527B2 (ja) | 2008-03-28 | 2008-03-28 | 静電チャック、及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200949980A TW200949980A (en) | 2009-12-01 |
| TWI442501B true TWI442501B (zh) | 2014-06-21 |
Family
ID=41115938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098110146A TWI442501B (zh) | 2008-03-28 | 2009-03-27 | Electrostatic chuck and its manufacturing method |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8517392B2 (enExample) |
| JP (1) | JP5201527B2 (enExample) |
| CN (1) | CN101546724B (enExample) |
| TW (1) | TWI442501B (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9728429B2 (en) * | 2010-07-27 | 2017-08-08 | Lam Research Corporation | Parasitic plasma prevention in plasma processing chambers |
| JP5876992B2 (ja) * | 2011-04-12 | 2016-03-02 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| JP5982206B2 (ja) * | 2012-07-17 | 2016-08-31 | 東京エレクトロン株式会社 | 下部電極、及びプラズマ処理装置 |
| KR101372805B1 (ko) * | 2012-11-30 | 2014-03-19 | 로체 시스템즈(주) | 웨이퍼 식각 시스템 및 이를 이용한 웨이퍼 식각 공정 |
| CN104241181B (zh) * | 2013-06-08 | 2018-05-29 | 中微半导体设备(上海)有限公司 | 静电吸盘的制造方法，静电吸盘及等离子体处理装置 |
| KR101385950B1 (ko) * | 2013-09-16 | 2014-04-16 | 주식회사 펨빅스 | 정전척 및 정전척 제조 방법 |
| CH708654A2 (fr) * | 2013-10-01 | 2015-04-15 | Rado Montres Sa | Procédé de fabrication d'un élément céramique incrusté d'une pièce d'horlogerie et pièces d'horlogerie incluant de tels éléments. |
| JP6277015B2 (ja) * | 2014-02-28 | 2018-02-07 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| WO2015153756A1 (en) | 2014-04-01 | 2015-10-08 | Entegris, Inc. | Heated electrostatic chuck |
| TWI613753B (zh) | 2015-02-16 | 2018-02-01 | 靜電吸附承盤側壁之改良密封件 | |
| CN108352297B (zh) * | 2015-12-07 | 2023-04-28 | 应用材料公司 | 合并式盖环 |
| CN106935529B (zh) * | 2015-12-31 | 2020-03-24 | 中微半导体设备(上海)股份有限公司 | 一种基片支撑台及其制造方法 |
| JP6971183B2 (ja) * | 2018-03-23 | 2021-11-24 | 新光電気工業株式会社 | 基板固定装置 |
| US11784067B2 (en) * | 2018-05-28 | 2023-10-10 | Niterra Co., Ltd. | Holding device and method for manufacturing holding device |
| JP6901547B2 (ja) * | 2018-09-28 | 2021-07-14 | 日本特殊陶業株式会社 | 半導体製造用部品 |
| JP7134826B2 (ja) * | 2018-10-11 | 2022-09-12 | 東京エレクトロン株式会社 | 静電チャックの生産方法 |
| WO2021044885A1 (ja) * | 2019-09-06 | 2021-03-11 | Toto株式会社 | 静電チャック |
| JP7438070B2 (ja) * | 2020-09-11 | 2024-02-26 | 新光電気工業株式会社 | 静電チャック、基板固定装置及び基板固定装置の製造方法 |
| JP7701149B2 (ja) * | 2020-12-24 | 2025-07-01 | 新光電気工業株式会社 | 静電チャックの製造方法 |
| US11881423B2 (en) * | 2021-02-09 | 2024-01-23 | Applied Materials, Inc. | Electrostatic chuck with metal bond |
| US11410869B1 (en) * | 2021-02-22 | 2022-08-09 | Applied Materials, Inc. | Electrostatic chuck with differentiated ceramics |
| JP7248182B1 (ja) | 2022-08-30 | 2023-03-29 | 住友大阪セメント株式会社 | 静電チャック部材及び静電チャック装置 |
| CN116959948B (zh) * | 2023-09-21 | 2023-12-08 | 江苏鲁汶仪器股份有限公司 | 一种静电吸盘以及等离子体刻蚀装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2984164B2 (ja) * | 1993-03-26 | 1999-11-29 | 日本碍子株式会社 | 半導体製造用サセプター |
| US5986874A (en) * | 1997-06-03 | 1999-11-16 | Watkins-Johnson Company | Electrostatic support assembly having an integral ion focus ring |
| JP3974226B2 (ja) | 1997-07-15 | 2007-09-12 | プレス工業株式会社 | 溶接部の強化方法及び溶接部の強化装置 |
| JP4493251B2 (ja) * | 2001-12-04 | 2010-06-30 | Ｔｏｔｏ株式会社 | 静電チャックモジュールおよび基板処理装置 |
| JP2003264223A (ja) * | 2002-03-08 | 2003-09-19 | Rasa Ind Ltd | 静電チャック部品および静電チャック装置およびその製造方法 |
| JP4066329B2 (ja) * | 2002-09-05 | 2008-03-26 | 太平洋セメント株式会社 | 静電チャックの製造方法およびそれを用いて得られた静電チャック |
| JP2003321760A (ja) * | 2003-05-19 | 2003-11-14 | Tocalo Co Ltd | プラズマ処理容器内部材およびその製造方法 |
| JP5019811B2 (ja) * | 2006-07-20 | 2012-09-05 | 東京エレクトロン株式会社 | 静電吸着電極の補修方法 |
| JP5160112B2 (ja) * | 2007-03-19 | 2013-03-13 | 東京エレクトロン株式会社 | 処理装置内構造体、プラズマ処理装置内構造体及びプラズマ処理装置 |
-
2008
- 2008-03-28 JP JP2008085417A patent/JP5201527B2/ja active Active
-
2009
- 2009-03-23 CN CN2009101270543A patent/CN101546724B/zh active Active
- 2009-03-25 US US12/410,873 patent/US8517392B2/en active Active
- 2009-03-27 TW TW098110146A patent/TWI442501B/zh active
-
2013
- 2013-07-23 US US13/948,921 patent/US8776356B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN101546724A (zh) | 2009-09-30 |
| US20090243236A1 (en) | 2009-10-01 |
| TW200949980A (en) | 2009-12-01 |
| JP2009235536A (ja) | 2009-10-15 |
| US8517392B2 (en) | 2013-08-27 |
| CN101546724B (zh) | 2011-08-03 |
| JP5201527B2 (ja) | 2013-06-05 |
| US20130306593A1 (en) | 2013-11-21 |
| US8776356B2 (en) | 2014-07-15 |
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