TWI442476B - 半導體之微襯墊形成 - Google Patents

半導體之微襯墊形成 Download PDF

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Publication number
TWI442476B
TWI442476B TW097151677A TW97151677A TWI442476B TW I442476 B TWI442476 B TW I442476B TW 097151677 A TW097151677 A TW 097151677A TW 97151677 A TW97151677 A TW 97151677A TW I442476 B TWI442476 B TW I442476B
Authority
TW
Taiwan
Prior art keywords
copper
tin
semiconductor device
micropad
pillar
Prior art date
Application number
TW097151677A
Other languages
English (en)
Chinese (zh)
Other versions
TW200939348A (en
Inventor
馬修 法魯嘉斯
亞柯斯達 艾迪
查特基 里維克
賈西亞 山姆Ｓ
Original Assignee
飛思卡爾半導體公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 飛思卡爾半導體公司 filed Critical 飛思卡爾半導體公司
Publication of TW200939348A publication Critical patent/TW200939348A/zh
Application granted granted Critical
Publication of TWI442476B publication Critical patent/TWI442476B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07232—Compression bonding, e.g. thermocompression bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
TW097151677A 2008-01-04 2008-12-31 半導體之微襯墊形成 TWI442476B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/969,368 US7807572B2 (en) 2008-01-04 2008-01-04 Micropad formation for a semiconductor

Publications (2)

Publication Number Publication Date
TW200939348A TW200939348A (en) 2009-09-16
TWI442476B true TWI442476B (zh) 2014-06-21

Family

ID=40844919

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097151677A TWI442476B (zh) 2008-01-04 2008-12-31 半導體之微襯墊形成

Country Status (5)

Country Link
US (1) US7807572B2 (https=)
JP (1) JP5248627B2 (https=)
CN (1) CN101911292B (https=)
TW (1) TWI442476B (https=)
WO (1) WO2009088659A2 (https=)

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US20120175772A1 (en) * 2011-01-07 2012-07-12 Leung Andrew K Alternative surface finishes for flip-chip ball grid arrays
US9117772B2 (en) * 2012-06-19 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Bonding package components through plating
JP6079374B2 (ja) * 2013-03-29 2017-02-15 三菱マテリアル株式会社 ハンダ粉末の製造方法及びこの粉末を用いたハンダ用ペースト
JP6181441B2 (ja) * 2013-06-24 2017-08-16 新光電気工業株式会社 パッド構造、実装構造、及び、製造方法
DE102016109349A1 (de) * 2016-05-20 2017-11-23 Infineon Technologies Ag Chipgehäuse, verfahren zum bilden eines chipgehäuses und verfahren zum bilden eines elektrischen kontakts
US11276659B2 (en) 2020-02-28 2022-03-15 Micron Technology, Inc. Methods for forming elements for microelectronic components, related conductive elements, and microelectronic components, assemblies and electronic systems incorporating such conductive elements

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Also Published As

Publication number Publication date
US20090176366A1 (en) 2009-07-09
WO2009088659A2 (en) 2009-07-16
JP5248627B2 (ja) 2013-07-31
CN101911292B (zh) 2012-06-20
JP2011508983A (ja) 2011-03-17
US7807572B2 (en) 2010-10-05
TW200939348A (en) 2009-09-16
CN101911292A (zh) 2010-12-08
WO2009088659A3 (en) 2009-09-03

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