JP5248627B2 - 半導体のマイクロパッド形成方法 - Google Patents

半導体のマイクロパッド形成方法 Download PDF

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Publication number
JP5248627B2
JP5248627B2 JP2010541477A JP2010541477A JP5248627B2 JP 5248627 B2 JP5248627 B2 JP 5248627B2 JP 2010541477 A JP2010541477 A JP 2010541477A JP 2010541477 A JP2010541477 A JP 2010541477A JP 5248627 B2 JP5248627 B2 JP 5248627B2
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Japan
Prior art keywords
copper
tin
stud
micropad
semiconductor element
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Active
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JP2010541477A
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English (en)
Japanese (ja)
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JP2011508983A5 (https=
JP2011508983A (ja
Inventor
マシュー、バルギース
アコスタ、エディ
チャタジー、リトウィック
エス． ガルシア、サム
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NXP USA Inc
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NXP USA Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07232—Compression bonding, e.g. thermocompression bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
JP2010541477A 2008-01-04 2008-12-16 半導体のマイクロパッド形成方法 Active JP5248627B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/969,368 2008-01-04
US11/969,368 US7807572B2 (en) 2008-01-04 2008-01-04 Micropad formation for a semiconductor
PCT/US2008/086920 WO2009088659A2 (en) 2008-01-04 2008-12-16 Micropad formation for a semiconductor

Publications (3)

Publication Number Publication Date
JP2011508983A JP2011508983A (ja) 2011-03-17
JP2011508983A5 JP2011508983A5 (https=) 2012-02-09
JP5248627B2 true JP5248627B2 (ja) 2013-07-31

Family

ID=40844919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010541477A Active JP5248627B2 (ja) 2008-01-04 2008-12-16 半導体のマイクロパッド形成方法

Country Status (5)

Country Link
US (1) US7807572B2 (https=)
JP (1) JP5248627B2 (https=)
CN (1) CN101911292B (https=)
TW (1) TWI442476B (https=)
WO (1) WO2009088659A2 (https=)

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* Cited by examiner, † Cited by third party
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EP2298960A1 (en) * 2009-08-24 2011-03-23 ATOTECH Deutschland GmbH Method for electroless plating of tin and tin alloys
US20120175772A1 (en) * 2011-01-07 2012-07-12 Leung Andrew K Alternative surface finishes for flip-chip ball grid arrays
US9117772B2 (en) * 2012-06-19 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Bonding package components through plating
JP6079374B2 (ja) * 2013-03-29 2017-02-15 三菱マテリアル株式会社 ハンダ粉末の製造方法及びこの粉末を用いたハンダ用ペースト
JP6181441B2 (ja) * 2013-06-24 2017-08-16 新光電気工業株式会社 パッド構造、実装構造、及び、製造方法
DE102016109349A1 (de) * 2016-05-20 2017-11-23 Infineon Technologies Ag Chipgehäuse, verfahren zum bilden eines chipgehäuses und verfahren zum bilden eines elektrischen kontakts
US11276659B2 (en) 2020-02-28 2022-03-15 Micron Technology, Inc. Methods for forming elements for microelectronic components, related conductive elements, and microelectronic components, assemblies and electronic systems incorporating such conductive elements

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US4832799A (en) * 1987-02-24 1989-05-23 Polyonics Corporation Process for coating at least one surface of a polyimide sheet with copper
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JPH09170083A (ja) * 1995-12-20 1997-06-30 Mitsubishi Electric Corp スズまたはスズ合金の無電解めっき方法
US6245658B1 (en) * 1999-02-18 2001-06-12 Advanced Micro Devices, Inc. Method of forming low dielectric semiconductor device with rigid, metal silicide lined interconnection system
US6882045B2 (en) * 1999-10-28 2005-04-19 Thomas J. Massingill Multi-chip module and method for forming and method for deplating defective capacitors
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Also Published As

Publication number Publication date
US20090176366A1 (en) 2009-07-09
WO2009088659A2 (en) 2009-07-16
CN101911292B (zh) 2012-06-20
JP2011508983A (ja) 2011-03-17
US7807572B2 (en) 2010-10-05
TW200939348A (en) 2009-09-16
CN101911292A (zh) 2010-12-08
TWI442476B (zh) 2014-06-21
WO2009088659A3 (en) 2009-09-03

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