JP6181441B2 - パッド構造、実装構造、及び、製造方法 - Google Patents
パッド構造、実装構造、及び、製造方法 Download PDFInfo
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- JP6181441B2 JP6181441B2 JP2013132029A JP2013132029A JP6181441B2 JP 6181441 B2 JP6181441 B2 JP 6181441B2 JP 2013132029 A JP2013132029 A JP 2013132029A JP 2013132029 A JP2013132029 A JP 2013132029A JP 6181441 B2 JP6181441 B2 JP 6181441B2
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- layer
- nickel
- gold
- barrier
- tin
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- 238000004519 manufacturing process Methods 0.000 title description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 132
- 239000010949 copper Substances 0.000 claims description 105
- 239000010931 gold Substances 0.000 claims description 75
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 72
- 229910052737 gold Inorganic materials 0.000 claims description 72
- 230000004888 barrier function Effects 0.000 claims description 68
- 229910052759 nickel Inorganic materials 0.000 claims description 63
- 239000011135 tin Substances 0.000 claims description 56
- 229910052718 tin Inorganic materials 0.000 claims description 47
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 42
- 238000007747 plating Methods 0.000 claims description 41
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 40
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 31
- 229910052802 copper Inorganic materials 0.000 claims description 31
- 229910000679 solder Inorganic materials 0.000 claims description 20
- 229910000765 intermetallic Inorganic materials 0.000 claims description 15
- 239000010936 titanium Substances 0.000 claims description 7
- 229910017482 Cu 6 Sn 5 Inorganic materials 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 238000006467 substitution reaction Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical compound [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 340
- 238000006073 displacement reaction Methods 0.000 description 31
- 238000005260 corrosion Methods 0.000 description 30
- 230000007797 corrosion Effects 0.000 description 30
- 238000005530 etching Methods 0.000 description 25
- 238000000034 method Methods 0.000 description 20
- 230000008569 process Effects 0.000 description 19
- 239000011347 resin Substances 0.000 description 14
- 229920005989 resin Polymers 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 13
- 239000000243 solution Substances 0.000 description 13
- 238000007789 sealing Methods 0.000 description 12
- WVHNUGRFECMVLQ-UHFFFAOYSA-N 1,3-dichloro-2-(2,4-dichlorophenyl)benzene Chemical compound ClC1=CC(Cl)=CC=C1C1=C(Cl)C=CC=C1Cl WVHNUGRFECMVLQ-UHFFFAOYSA-N 0.000 description 11
- 230000005012 migration Effects 0.000 description 8
- 238000013508 migration Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 239000011800 void material Substances 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000007772 electroless plating Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 239000008151 electrolyte solution Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910020816 Sn Pb Inorganic materials 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020830 Sn-Bi Inorganic materials 0.000 description 1
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910020922 Sn-Pb Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 229910018728 Sn—Bi Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- 229910008783 Sn—Pb Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002335 surface treatment layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4007—Surface contacts, e.g. bumps
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0652—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15192—Resurf arrangement of the internal vias
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/111—Pads for surface mounting, e.g. lay-out
- H05K1/112—Pads for surface mounting, e.g. lay-out directly combined with via connections
- H05K1/113—Via provided in pad; Pad over filled via
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0338—Layered conductor, e.g. layered metal substrate, layered finish layer, layered thin film adhesion layer
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10431—Details of mounted components
- H05K2201/10507—Involving several components
- H05K2201/10515—Stacked components
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10431—Details of mounted components
- H05K2201/10507—Involving several components
- H05K2201/1053—Mounted components directly electrically connected to each other, i.e. not via the PCB
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4007—Surface contacts, e.g. bumps
- H05K3/4015—Surface contacts, e.g. bumps using auxiliary conductive elements, e.g. pieces of metal foil, metallic spheres
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
Description
図1は、比較例のパッド構造の製造方法を示す図である。
図4は、実施の形態のパッド構造及び実装構造を含む半導体パッケージ50A、50Bを示す断面図である。図4(A)には3次元実装構造による半導体パッケージ50Aを示し、図4(B)には所謂2.5次元実装構造による半導体パッケージ50Bを示す。
1 絶縁層
2 ビア
3 バリア層
6 ニッケル層
7 金層
5 レジスト
21 はんだ
22 バンプ
104 置換めっき層
200 実装構造
Claims (4)
- 絶縁層と、
前記絶縁層の一方の面の上に配設される、チタン製のバリア層と、
前記バリア層の上に配設され、Cu3Sn又はCu6Sn5製の第1金属層と、
前記第1金属層の上に配設されるニッケル層と、前記ニッケル層の上に配設される金層とを有する第2金属層と
を含み、
前記バリア層、前記第1金属層、及び前記第2金属層の側面は、面一である、パッド構造。 - 絶縁層と、
前記絶縁層の一方の面の上に配設されるバリア層と、
前記バリア層の上に配設され、Cu3Sn又はCu6Sn5製の第1金属層と、
前記第1金属層の上に配設される、ニッケル製の第2金属層と
前記第2金属層の上に接続されるはんだ層と、
前記はんだ層の上に接続される接続部と
を含み、
前記バリア層、前記第1金属層、及び前記第2金属層の側面は、面一である、実装構造。 - 前記第1金属層と前記第2金属層との間に配設され、Ni3Sn4、Ni3Sn2、又はNi3Snの組成を有するニッケルと錫の金属間化合物層をさらに含む、請求項2記載の実装構造。
- 絶縁層の一方の面の上に、チタン製のバリア層を形成する工程と、
前記バリア層の上に、銅シード層を形成する工程と、
前記銅シード層の上に開口部を有するレジストを形成する工程と、
前記開口部の側から前記銅シード層に対して、錫を用いた置換めっきを行うことにより、Cu3Sn又はCu6Sn5製の第1金属層を形成する工程と、
前記第1金属層の上に、ニッケル層と、前記ニッケル層の上に配設される金層とを有する第2金属層を形成する工程と、
前記レジストを除去する工程と、
前記銅シード層と、前記バリア層のうちの前記第1金属層及び前記絶縁層の間にある部分以外とを除去することにより、前記バリア層、前記第1金属層、及び前記第2金属層の側面が面一なパッド構造を形成する工程と
を含む、パッド構造の製造方法。
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JP2013132029A JP6181441B2 (ja) | 2013-06-24 | 2013-06-24 | パッド構造、実装構造、及び、製造方法 |
US14/303,790 US9392703B2 (en) | 2013-06-24 | 2014-06-13 | Pad structure and mounted structure |
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JP2013132029A JP6181441B2 (ja) | 2013-06-24 | 2013-06-24 | パッド構造、実装構造、及び、製造方法 |
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US9508645B1 (en) * | 2016-04-14 | 2016-11-29 | Macronix International Co., Ltd. | Contact pad structure |
US9685408B1 (en) * | 2016-04-14 | 2017-06-20 | Macronix International Co., Ltd. | Contact pad structure and method for fabricating the same |
US10453816B2 (en) * | 2016-09-28 | 2019-10-22 | Rohm Co., Ltd. | Semiconductor device |
JP6357271B1 (ja) * | 2017-10-25 | 2018-07-11 | 有限会社 ナプラ | 柱状導体構造 |
US10418316B1 (en) * | 2018-04-04 | 2019-09-17 | Advanced Semiconductor Engineering, Inc. | Semiconductor substrate, semiconductor package structure and method of manufacturing a semiconductor device |
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JP2005142338A (ja) | 2003-11-06 | 2005-06-02 | Hitachi Chem Co Ltd | プリント配線板の製造方法およびプリント配線板 |
JP4817418B2 (ja) * | 2005-01-31 | 2011-11-16 | オンセミコンダクター・トレーディング・リミテッド | 回路装置の製造方法 |
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US8901431B2 (en) * | 2010-12-16 | 2014-12-02 | Ibiden Co., Ltd. | Printed wiring board and method for manufacturing printed wiring board |
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US20140374149A1 (en) | 2014-12-25 |
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