TWI441290B - 具強化熱耗散之封裝積體電路 - Google Patents

具強化熱耗散之封裝積體電路 Download PDF

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TWI441290B
TWI441290B TW95125132A TW95125132A TWI441290B TW I441290 B TWI441290 B TW I441290B TW 95125132 A TW95125132 A TW 95125132A TW 95125132 A TW95125132 A TW 95125132A TW I441290 B TWI441290 B TW I441290B
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thermal
semiconductor die
integrated circuit
bond pads
pads
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TW95125132A
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TW200707682A (en
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Kevin J Hess
Chu Chung Lee
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Freescale Semiconductor Inc
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Description

具強化熱耗散之封裝積體電路
本發明大體而言係關於積體電路之封裝，且更詳言之係關於強化耗散熱之能力的封裝。
由於隨著每單位面積電晶體之數目不斷增加積體電路繼續變得越來越密集，所以存在引起更多熱產生之更多電晶體切換。因此，多種封裝類型受到耗散更多熱之持續壓力。一常用於規測特定封裝之有效性之措施稱為接面至外殼熱阻(junction－to－case thermal resistance)(θ－JC)。通常以攝氏度每瓦特表述之θ－JC代表封裝之熱耗散能力。封裝係基於諸如熱耗散、電效能、尺寸及成本之若干因子來選擇。熱耗散通常為必須滿足之要求，而其他則可折衷處理。實際上，給定積體電路晶粒具有功率耗散要求且電效能、尺寸及成本之其他問題必須根據該功率耗散要求來考慮。因此，改良功率耗散可引起效能改良、尺寸減小及成本降低中之一或多者。就成本而言更理想之封裝通常為塑膠。已開發多種具有不同電特性之塑膠封裝。在塑膠封裝中，通常存在使積體電路由塑膠密封之塑膠成型製程。由於塑膠通常為絕熱體，所以此使得其難以耗散由封裝內側之積體電路所產生的熱。因此，塑膠封裝熱耗散之任何改良皆可引起成本降低及/或效能改良。
因此，存在對降低積體電路之熱之封裝、尤其係塑膠封裝的需要。
一種封裝積體電路，其包含：一上覆於一基板上之半導體晶粒，該半導體晶粒包含複數個上覆於主動電路(active circuitry)上之熱接合墊；複數條熱接合線，該複數條熱接合線中之每一者皆連接至該複數個熱接合墊中之至少一者，該複數條熱接合線中之每一者皆自該半導體晶粒向上延伸且未延伸超過該半導體晶粒之一周邊即終止；及一密封材料，其圍繞該半導體晶粒、該複數個熱接合墊及該複數條熱接合線，該複數條熱接合線將熱自該半導體晶粒傳導至該密封材料之一上表面。
在一態樣中，封裝積體電路具有自積體電路之表面向上垂直延伸至封裝表面之接合線，該封裝較佳係塑膠。此等垂直接合線暴露於周圍環境下，所以係有效耗散熱的。接合線可連接至積體電路表面中無功能之部分。在此情況下垂直接合線應係電浮動(electrically floating)的。為進一步強化熱耗散，一導熱金屬板可連接至垂直接合線之暴露末端。此板亦可充當一電源板，在此情況下垂直接合線將連接至諸如VDD或接地之特定電源端子。此可參考圖式及以下描述而更好地理解。
圖1中展示一封裝積體電路10，其包含一封裝基板12、一在封裝基板12上之積體電路14及一塑膠密封材料16，該塑膠密封材料16經成型以覆蓋積體電路14之頂部及側部以及封裝基板12之頂面的一部分。基板12有較小之周邊部分未由塑膠密封材料16覆蓋。積體電路14通常應為矩形半導體，其已經過處理而具有經組態以執行電功能之電晶體及可能之其他電路元件。積體電路亦通常稱為晶粒或晶片。封裝接合墊18及30在基板12上。主動接合墊20及28在積體電路14之周邊部分上，該等主動接合墊20及28在其上又分別具有球形接合34及50。主動接合線54之一末端藉由針腳式接合(stitch bond)而連接至封裝接合墊18且另一末端藉由球形接合34而固持至主動接合墊20。類似地，主動接合線66之一末端藉由針腳式接合而連接至封裝接合墊30且另一末端藉由球形接合50而固持至主動接合墊28。接合線54及66之線接合係藉由習知方式。
封裝積體電路10進一步包含額外之球形接合、接合線及接合墊。熱接合墊22係在積體電路14上。熱接合線56藉由球形接合36而連接至熱接合墊22。熱接合線56自積體電路14之表面垂直延伸至塑膠密封材料16之頂面。在積體電路14上之熱接合墊24其上具有球形接合38及柱凸塊(stud bump)40。熱接合線58自球形接合38垂直延伸至塑膠密封材料16之表面，其彎曲以使一部分沿塑膠密封材料16之表面，且向下彎曲而針腳式接合至柱凸塊40。此得到一線迴路，其兩末端連接至熱接合墊24且中間部分暴露於塑膠密封材料16之表面處。作為替代，球形接合38及柱凸塊40可置放於兩個分離之熱接合墊上，而非置放於僅一個熱接合墊24上。在積體電路14上之熱接合墊26其上具有球形接合42、球形接合44及球形接合46。熱接合線60、熱接合線62及熱接合線64分別藉由球形接合42、44及46而連接至熱接合墊26。熱接合線60、62及64亦自熱接合墊26垂直延伸至其所暴露處塑膠密封材料16之表面。此等熱接合線之益處係其可藉由習知線接合設備如圖1中所示般地來置放。此等熱接合線之益處係其可視需要置放於積體電路14之表面上以自積體電路中需要較高熱耗散之部分移除熱。
球形接合36係附接至熱接合墊22。在形成塑膠密封材料16之前形成熱接合線56且切割至所要高度。球形接合42係附接至熱接合墊26。在形成塑膠密封材料16之前形成熱接合線60且切割至所要高度。球形接合44係附接至熱接合墊26。在形成塑膠密封材料16之前形成熱接合線62且切割至所要高度。球形接合46係附接至熱接合墊26。在形成塑膠密封材料16之前形成熱接合線64且切割至所要高度。
柱凸塊40係形成於熱接合墊24上。球形接合38係形成於熱接合墊24上。熱接合線58經彎曲定型且藉由在柱凸塊40處之針腳式接合而終止。接著將安裝至基板12之積體電路14插入於塑膠所流動之模具中以形成塑膠密封材料16。熱接合線56、60、62及64之高度可使用習知線接合設備而精密切割至模具之高度。類似地，熱接合線58中之迴路可藉由習知線接合設備來精密定型。由於塑膠流入模具中而引起熱接合線56、58、60、62及64之若干移動，所以可能存在若干線偏移(wire sweep)。熱接合線56、58、60、62及64之長度可經延長以補償此偏移或任何其他變化，以確保其在形成密封材料之後係暴露的。
藉由具有暴露末端之熱接合線56、58、60、62及64，存在自積體電路晶粒14至塑膠密封材料16之表面之實質熱傳導。因為熱接合線56、58、60、62及64係高度導熱的，尤其係與諸如密封材料16之塑膠材料相比，所以熱可藉由傳導至周圍環境中來移除。因此，在熱接合線56、58、60、62及64存在之情況下θ－JC得到顯著改良。熱接合線56、58、60、62及64未連接至主動電路，所以其係電浮動的。在此情況下，即使其歸因於偏移或其他原因而彼此接觸，對電訊號處理亦無損害。熱線56、58、60、62及64可在未連接至任何主動電路之情況下有效係一顯著益處。當使接合線延伸至積體電路之周邊內側之區域時偏移可為一特定問題。
在典型塑膠密封製程中，在表面上存在一薄層之樹脂。若熱接合線56、58、60、62及64之意欲暴露之表面被樹脂覆蓋，則仍可保持大部分有益熱耗散效應。因此一點點樹脂塗層仍被認為係暴露的。即使存在幾百條垂直接合線，垂直接合線之額外成本亦非常低。熱接合線係相當小且短的。積體電路14上方之塑膠密封16之高度僅約0.8毫米，且熱接合線之直徑(例如)僅約0.02毫米。因此，儘管接合線通常為金，但即使數百條接合線之使用量亦係相當小的。儘管用於載運訊號及電力之接合線歸因於封裝引腳(pin out)之約束而理想地具有小直徑，但熱接合線亦可較粗以改良熱耗散。使用不同直徑之線之缺點為需要在線接合機(wirebonder)中改變接合線或移至不同的線接合機。
圖2中展示在塑膠密封材料16之頂面上具有均熱片68之封裝積體電路10。均熱片68與熱接合線56、58、60、62及64之暴露部分接觸以強化熱耗散。若一薄層之密封材料樹脂形成於熱線56、58、60、62及64之垂直末端上，則其可較佳藉由磨光塑膠密封材料16之頂面而移除，但其亦可藉由諸如化學清洗之另一方法而移除。其亦可不必移除，因為均熱片68即使在樹脂存在之情況下亦將以良好之熱傳導而黏著。移除樹脂後之改良程度可能並不值移除其之成本。
圖3中展示封裝積體電路10之俯視圖。除了圖1中展示之特徵外，封裝積體電路10進一步包含熱區96、熱區98及熱區99，以及額外之主動接合線82、84及67及相關聯之主動接合墊78、80及49及封裝接合墊74、76及31。圖3亦展示熱接合墊22、熱接合線56及球形接合36組成熱區90。類似地，熱區92包含熱接合墊24、球形接合38及具有反向針腳(reverse stitch)40之球形接合，以及熱接合線58。熱區94包含熱接合墊26、球形接合42、44及46，以及熱接合線60、62及64。熱區99包含熱接合墊27、球形接合47及接合線65。熱區99描繪的係熱區可存在於周邊區域70中而不是必需處於晶粒電路區域72中。熱區96及98未詳細展示，但其可以與熱區90、92、94及99中之一者同樣的方式來構造。整個積體電路無需具有熱區，但熱區可視需要僅置放於適當位置中。將熱區僅置放於彼等需要額外熱耗散之位置中可節省時間及材料。線接合67延伸入晶粒電路區域72中，其較佳為一絕緣線以避免碰觸其他線。為便於理解已簡化封裝積體電路10且應理解比所展示之彼等接合線更多之接合線將被連接。
圖4中展示一封裝積體電路100，其包含一封裝基板112、一在封裝基板112上之積體電路114、一在積體電路114上之塑膠密封材料116及與積體電路204相鄰之基板112之一部分，以及一在塑膠密封材料116上之均熱片139。主動接合線124藉由球形接合122而連接至主動接合墊120且藉由針腳式接合而連接至封裝接合墊118。主動接合線132藉由球形接合130而連接至主動接合墊128且藉由針腳式接合而連接至封裝接合墊126。一熱區包含在積體電路114上之熱接合墊134、在熱接合墊134上之複數個球形接合136及複數條熱接合線138。電力線142藉由針腳式接合而連接於均熱片139與在封裝基板112上之封裝接合墊140之間。類似地，電力線146藉由針腳式接合而連接於均熱片139與在封裝基板112上之封裝接合墊144之間。在此情況下散熱片139不僅可用作均熱片且對於電力亦係有用的，其可接地或與VDD連接。舉例而言，均熱片139可作為接地屏蔽來操作。在任一情況下，積體電路114之整個中央部分皆可由熱區覆蓋，因為在所有位置中皆將有電力且此等電力可運送至積體電路114之表面。電力線142與146將在已置放均熱片139之後進行置放，且可使用比密封之接合線之直徑大得多的線進行連接。
圖5中展示一封裝積體電路200，其包含一封裝基板202、一半導體晶粒204、一均熱片226及一塑膠密封材料224，以及接合墊、接合線、球形接合及柱凸塊。封裝接合線212 藉由球形接合210而連接於在積體電路204上之主動接合墊208與在封裝基板202上之封裝接合墊206之間。類似地，封裝接合線220藉由球形接合218而連接於在積體電路204上之主動接合墊216與在封裝基板202上之封裝接合墊214之間。複數個熱接合墊223在積體電路204上。複數個柱凸塊222在熱接合墊223上。均熱片226在複數個柱凸塊222上。柱凸塊222經製造為習知柱凸塊。均熱片226係在線接合之後且在形成塑膠密封224之前置放於複數個柱凸塊222上。
因此，可見降低θ-JC之便利途徑係藉由使線或柱凸塊垂直向上而達成。該等線或柱凸塊係暴露的或連接至一均熱片。其無需在積體電路周邊之外側延伸，且因此可保持較短以避免偏移問題。與橫向定向之熱導體或線相比，垂直定向之熱導體提供更有效、自積體電路之表面至密封封裝外部之更短的熱傳導路徑。
上文已關於具體實施例描述了益處、其他優點及對問題之解決方法。然而，該等益處、優點、對問題之解決方法及可能引起任何益處、優點或解決方法發生或變得更明顯之任何元件不應解釋為任何或所有請求項之決定性的、必要的或本質的特徵或元件。如本文所使用，術語"包含"或其任何其他變體意欲涵蓋非排他性之包含，使得包含一列元件之製程、方法、物件或裝置不僅包括彼等元件，且可包括未明確列出之或此等製程、方法、物件或裝置所固有之其他元件。
10．．．封裝積體電路
12．．．基板
14．．．積體電路
16．．．塑膠密封材料
18．．．封裝接合墊
20．．．接合墊
22．．．熱接合墊
24．．．熱接合墊
26．．．熱接合墊
27．．．熱接合墊
28．．．接合墊
30．．．封裝接合墊
31．．．封裝接合墊
34．．．球形接合
36．．．球形接合
38．．．球形接合
40．．．柱凸塊
42．．．球形接合
44．．．球形接合
46．．．球形接合
47．．．球形接合
49．．．接合墊
50．．．球形接合
54．．．接合線
56．．．熱接合線
58．．．熱接合線
60．．．熱接合線
62．．．熱接合線
64．．．熱接合線
65．．．接合線
66．．．接合線
67．．．接合線
68．．．均熱片
70．．．周邊區域
72．．．晶粒電路區域
74．．．封裝接合墊
76．．．封裝接合墊
78．．．接合墊
80．．．接合墊
82．．．接合線
84．．．接合線
90．．．熱區
92．．．熱區
94．．．熱區
96．．．熱區
98．．．熱區
99．．．熱區
100．．．封裝積體電路
112．．．封裝基板
114．．．積體電路
116．．．塑膠密封材料
118．．．封裝接合墊
120．．．接合墊
122．．．球形接合
124．．．接合線
126．．．封裝接合墊
128．．．接合墊
130．．．球形接合
132．．．接合線
134．．．熱接合墊
136．．．球形接合
138．．．熱接合線
139．．．均熱片
140‧‧‧封裝接合墊
142‧‧‧電力線
144‧‧‧封裝接合墊
146‧‧‧電力線
200‧‧‧封裝積體電路
202‧‧‧封裝基板
204‧‧‧積體電路
206‧‧‧封裝接合墊
208‧‧‧接合墊
210‧‧‧球形接合
212‧‧‧封裝接合線
214‧‧‧封裝接合墊
216‧‧‧接合墊
218‧‧‧球形接合
220‧‧‧封裝接合線
222‧‧‧柱凸塊
223‧‧‧熱接合墊
224‧‧‧塑膠密封材料
226‧‧‧均熱片
圖1為根據本發明一實施例之封裝積體電路的橫截面；圖2為具額外特徵之圖1之封裝積體電路的橫截面；圖3為圖1之封裝積體電路的俯視圖；圖4為根據一替代實施例之封裝積體電路的橫截面；及圖5為根據另一替代實施例之封裝積體電路的橫截面。
熟習技術人員應瞭解圖中之元件為了簡易及清晰而說明且不必按比例繪製。例如，圖中某些元件之尺寸可相對於其他元件而放大以幫助增進對本發明之實施例的理解。
10．．．封裝積體電路
12．．．基板
14．．．積體電路
16．．．塑膠密封材料
18．．．封裝接合墊
20．．．接合墊
22．．．熱接合墊
24．．．熱接合墊
26．．．熱接合墊
28．．．接合墊
30．．．封裝接合墊
34．．．球形接合
36．．．球形接合
38．．．球形接合
40．．．柱凸塊
42．．．球形接合
44．．．球形接合
46．．．球形接合
50．．．球形接合
54．．．接合線
56．．．熱接合線
58．．．熱接合線
60．．．熱接合線
62．．．熱接合線
64．．．熱接合線
66．．．接合線
68．．．均熱片

Claims (19)

  1. 一種封裝積體電路，其包含：一上覆於一基板上之半導體晶粒，該半導體晶粒包含複數個上覆於主動電路(active circuitry)上之熱接合墊；複數條熱接合線，該複數條熱接合線中之每一者皆連接至該複數個熱接合墊中之至少一者，該複數條熱接合線中之每一者皆自該半導體晶粒向上延伸且未延伸超過該半導體晶粒之一周邊即終止；及一密封材料，其圍繞該半導體晶粒、該複數個熱接合墊及該複數條熱接合線，該複數條熱接合線將熱自該半導體晶粒傳導至該密封材料之一上表面，其中該複數個熱接合線中至少一者自該複數個熱接合墊中一者垂直延伸至該密封材料之該上表面，該複數個熱接合線中該至少一者係彎曲的以具有沿著該密封材料之該上表面的一部分，且該複數個熱接合線中該至少一者係彎曲的以被垂直地連接至該複數個熱接合墊中之一者。
  2. 如請求項1之封裝積體電路，其中該複數條熱接合線中之一或多者延伸至該密封材料之該上表面。
  3. 如請求項1之封裝積體電路，其中該複數條熱接合線中之至少一者藉由自兩個熱接合墊中之一第一者延伸遠離該半導體晶粒的一表面，且朝著該半導體晶粒之該表面返回以連接至該兩個熱接合墊中之一第二者而連接至該兩個熱接合墊。
  4. 如請求項1之封裝積體電路，其進一步包含：至少一個均熱片，其上覆於該複數條熱接合線中之至少一者上，用以自該複數條熱接合線中之該至少一者傳導熱且自該封裝積體電路輻射熱。
  5. 如請求項4之封裝積體電路，其中該複數條熱接合線中之至少一者連接至該至少一個均熱片以充當上覆於該半導體晶粒上之一電源導體或一接地導體。
  6. 如請求項1之封裝積體電路，其中該複數個熱接合墊之一部分未連接至該半導體晶粒內之任何主動電路。
  7. 如請求項1之封裝積體電路，其中該複數個熱接合墊中之所有熱接合墊並未連接至該半導體晶粒之任何主動電路。
  8. 如請求項1之封裝積體電路，其中該複數個熱接合墊中之至少一者連接至該主動電路內之一電源端子或接地端子。
  9. 如請求項1之封裝積體電路，其進一步包含：複數個主動接合墊，其定位在該半導體晶粒之一周邊周圍，且電連接至在該半導體晶粒之該周邊外側之個別封裝接合墊。
  10. 一種封裝積體電路，其包含：一上覆於一基板上之半導體晶粒；上覆於該半導體晶粒上之複數個主動接合墊，其具有一與其相關聯之電功能，及上覆於該半導體晶粒上之複數個熱接合墊，其不具有一與其相關聯之電功能； 一或多個熱導體，其連接至該複數個熱接合墊中之每一者，該複數個熱導體中之每一者自該半導體晶粒向上延伸；及一密封材料，其圍繞該半導體晶粒、該複數個熱接合墊、該複數個主動接合墊及該或該等熱導體，該等熱導體相較於該密封材料係高度熱傳導，且該等熱導體將熱自該半導體晶粒傳導至該密封材料之一上表面，其中該一或多個熱導體中至少一者包含一熱接合線，該熱接合線自該複數個熱接合墊中一者垂直延伸至該密封材料之該上表面，該熱接合線係彎曲的以具有沿著該密封材料之該上表面的一部分，且該熱接合線係彎曲的以被垂直地連接至該複數個熱接合墊中之一者。
  11. 如請求項10之封裝積體電路，其中該或該等熱導體進一步包含複數個柱凸塊或複數條熱接合線。
  12. 如請求項10之封裝積體電路，其中該或該等熱導體中之至少一者包含一熱接合線，該熱接合線自該複數個熱接合墊中之一第一者延伸遠離該半導體晶粒且朝著該半導體晶粒返回以連接至該複數個熱接合墊中之一第二者。
  13. 如請求項10之封裝積體電路，其進一步包含：至少一個均熱片，其上覆於該或該等熱導體中之至少一者上，用以自該或該等熱導體傳導熱。
  14. 如請求項13之封裝積體電路，其中該均熱片係一用於傳導一電源電壓或一接地參考電位之訊號導體，該均熱片與該或該等熱導體中之一或多者處於電接觸。
  15. 如請求項10之封裝積體電路，其中該複數個主動接合墊位於該封裝積體電路之一周邊區域內且該複數個熱接合墊位於該封裝積體電路之一中央區域內，該或該等熱導體未延伸超過該半導體晶粒之一周邊邊緣。
  16. 一種封裝一積體電路之方法，其包含：提供一半導體晶粒，該半導體晶粒包含複數個主動接合墊且包含複數個熱接合墊，該複數個主動接合墊具有一與其相關聯之電功能，其中提供一半導體晶粒之步驟包含在該半導體晶粒之一內部區域內定位該複數個熱接合墊；置放該半導體晶粒使其上覆於一基板上；將一或多個熱導體連接至該複數個熱接合墊中之每一者，該或該等熱導體中之每一者自該半導體晶粒向上延伸，該或該等熱導體中之每一者皆未延伸超過該半導體晶粒之一周邊邊緣，其中該連接步驟包含：提供該或該等熱導體中至少一者如同一熱接合線，其形成一迴路並接觸該複數個熱接合墊中一個或多個；及用一密封材料圍繞該半導體晶粒、該複數個熱接合墊、該複數個主動接合墊及該或該等熱導體，以允許該等熱導體將熱自該半導體晶粒傳導至該密封材料之一上表面，其中該或該等熱導體相較於該密封材料係高度熱傳導，且形成一迴路且接觸該複數個熱接合墊中一個或多 個的該熱接合線自該複數個熱接合墊中一者垂直延伸至該密封材料之該上表面，該熱接合線係彎曲的以具有沿著該密封材料之該上表面的一部分，且該熱接合線係彎曲的以被垂直地連接至該複數個熱接合墊中之一者。
  17. 如請求項16之方法，其進一步包含：用該密封材料圍繞該半導體晶粒、該複數個熱接合墊、該複數個主動接合墊及該或該等熱導體之後，提供至少一個均熱片，該至少一個均熱片上覆於該或該等熱導體上用以自該或該等熱導體傳導熱。
  18. 如請求項16之方法，其進一步包含：用該密封材料圍繞該半導體晶粒、該複數個熱接合墊、該複數個主動接合墊及該或該等熱導體之後，將均熱片耦接至該或該等熱導體中之至少一者以用作一訊號導體，該訊號導體用以經由該或該等熱導體中之該至少一者將一電源電壓傳導至該半導體晶粒或將一接地參考電位提供至該半導體晶粒。
  19. 如請求項16之方法，其中提供一半導體晶粒之步驟包含：在該半導體晶粒之一中央區域內定位該複數個主動接合墊中之至少一者；及在該半導體晶粒之一周邊區域內定位該複數個主動接合墊中之剩餘者。
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US20080136016A1 (en) 2008-06-12
US20070023880A1 (en) 2007-02-01
WO2007016088A2 (en) 2007-02-08
EP1913633B1 (en) 2018-11-14
JP5149178B2 (ja) 2013-02-20
CN101548377B (zh) 2011-03-09
JP2009503865A (ja) 2009-01-29
US7572680B2 (en) 2009-08-11
KR20080044235A (ko) 2008-05-20
CN101548377A (zh) 2009-09-30
US7355289B2 (en) 2008-04-08
WO2007016088A3 (en) 2009-04-30
EP1913633A4 (en) 2010-04-14
EP1913633A2 (en) 2008-04-23
TW200707682A (en) 2007-02-16

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