JP2017092212A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP2017092212A JP2017092212A JP2015219580A JP2015219580A JP2017092212A JP 2017092212 A JP2017092212 A JP 2017092212A JP 2015219580 A JP2015219580 A JP 2015219580A JP 2015219580 A JP2015219580 A JP 2015219580A JP 2017092212 A JP2017092212 A JP 2017092212A
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Abstract
【課題】樹脂が半導体チップから剥がれ難い半導体装置およびその製造方法を提供する。
【解決手段】本実施形態による半導体装置は基板を備えている。半導体チップは基板上に設けられている。半導体チップは、半導体チップの回路に電気的に接続された第1電極パッドと、回路に電気的に接続されていない第2電極パッドとを有する。第1ワイヤは、半導体パッケージの外部と電気的に接続可能であり、第1電極パッドと電気的に接続されている。第2ワイヤは、半導体パッケージの外部と電気的に接続せず、第2電極パッドと基板との間に電気的に接続されている。樹脂は、半導体チップ、第1および第2ワイヤの周囲に設けられている。
【選択図】図1
Description
半導体材料との熱応力差により、金属材料の表面から剥離し易い。樹脂が金属パッドの表面から剥離すると、樹脂とダミーパッドとの間に間隙ができ易い。このような間隙は、パッドの腐食等の問題を引き起こし、半導体パッケージの信頼性を低下させてしまう。
Claims (8)
- 基板と、
前記基板上に設けられた半導体チップであって、前記半導体チップの回路に電気的に接続された第1電極パッドと、前記回路に電気的に接続されていない第2電極パッドとを有する半導体チップと、
半導体パッケージの外部と電気的に接続可能であり、前記第1電極パッドと電気的に接続された第1ワイヤと、
前記半導体パッケージの外部と電気的に接続せず、前記第2電極パッドと前記基板との間に電気的に接続された第2ワイヤと、
前記半導体チップ、前記第1および第2ワイヤの周囲に設けられた樹脂と、を備えた半導体装置。 - 前記第1電極パッド上に設けられ、該第1電極パッドと前記第1ワイヤとの間に電気的に接続された導電性の第1突起部と、
前記第2電極パッド上に設けられ、該第2電極パッドと前記第2ワイヤとの間に接続された導電性の第2突起部とを備えた、請求項1に記載の半導体装置。 - 前記第1ワイヤと前記第1突起部とは同じ材料であり、
前記第2ワイヤと前記第2突起部とは同じ材料である、請求項1または請求項2に記載の半導体装置。 - 前記半導体チップの表面上に設けられた絶縁膜をさらに備え、
前記絶縁膜は、少なくとも前記第1および第2電極パッド、前記半導体チップの表面端部、および、前記半導体チップの側面には設けられていない、請求項1から請求項3のいずれか一項に記載の半導体装置。 - 前記第2電極パッドおよび前記第2ワイヤは、電気的に浮遊状態である、請求項1から請求項4のいずれか一項に記載の半導体装置。
- 前記第2電極パッドは、前記半導体チップの回路を検証するために該半導体チップに設けられたテスト用パターンに接続されている、請求項1から請求項5のいずれか一項に記載の半導体装置。
- 前記第2電極パッドおよび前記第2ワイヤは、前記半導体チップの端部に設けられている、請求項1から請求項6のいずれか一項に記載の半導体装置。
- 基板上に前記半導体チップを搭載し、
前記半導体チップに設けられ前記半導体チップの回路に電気的に接続された第1電極パッドと前記基板に設けられ半導体パッケージの外部に電気的に接続可能な基板側パッドとの間に第1ワイヤを接続するとともに、前記半導体チップに設けられた第2電極パッドと前記半導体パッケージの外部に電気的に接続していない前記基板の領域との間に第2ワイヤを電気的に接続し、
前記半導体チップ、前記第1および第2ワイヤの周囲に樹脂を設けることを具備した半導体装置の製造方法。
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JP2015219580A JP2017092212A (ja) | 2015-11-09 | 2015-11-09 | 半導体装置およびその製造方法 |
US15/253,747 US20170133344A1 (en) | 2015-11-09 | 2016-08-31 | Semiconductor device with a resin layer and method of manufacturing the same |
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WO2023033047A1 (ja) * | 2021-09-03 | 2023-03-09 | 株式会社デンソー | 半導体装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6482640A (en) * | 1987-09-25 | 1989-03-28 | Mitsubishi Electric Corp | Semiconductor integrated circuit |
JPH07335680A (ja) * | 1994-06-14 | 1995-12-22 | Fujitsu Ltd | 回路基板及びその製造方法、並びに半導体装置のワイヤボンディング方法及び半導体装置の封止方法 |
JPH11330128A (ja) * | 1998-05-19 | 1999-11-30 | Fujitsu Ltd | 半導体装置 |
JP2002203945A (ja) * | 2000-12-28 | 2002-07-19 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2005317860A (ja) * | 2004-04-30 | 2005-11-10 | Fujitsu Ltd | 樹脂封止型半導体装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19652769A1 (de) * | 1996-12-18 | 1998-06-25 | Voith Sulzer Papiermasch Gmbh | Verfahren und Vorrichtung zur Dämpfung von Kontaktschwingungen |
TW465064B (en) * | 2000-12-22 | 2001-11-21 | Advanced Semiconductor Eng | Bonding process and the structure thereof |
US7355289B2 (en) * | 2005-07-29 | 2008-04-08 | Freescale Semiconductor, Inc. | Packaged integrated circuit with enhanced thermal dissipation |
JP2009130271A (ja) * | 2007-11-27 | 2009-06-11 | Panasonic Corp | 半導体装置とその製造方法 |
JP5619381B2 (ja) * | 2009-07-09 | 2014-11-05 | ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. | 半導体装置及び半導体装置の製造方法 |
JP6196092B2 (ja) * | 2013-07-30 | 2017-09-13 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
KR102327141B1 (ko) * | 2014-11-19 | 2021-11-16 | 삼성전자주식회사 | 프리패키지 및 이를 사용한 반도체 패키지의 제조 방법 |
US9917037B2 (en) * | 2015-01-22 | 2018-03-13 | Renesas Electronics Corporation | Semiconductor device including a first internal circuit, a second internal circuit and a switch circuit unit |
-
2015
- 2015-11-09 JP JP2015219580A patent/JP2017092212A/ja active Pending
-
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- 2016-08-31 US US15/253,747 patent/US20170133344A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6482640A (en) * | 1987-09-25 | 1989-03-28 | Mitsubishi Electric Corp | Semiconductor integrated circuit |
JPH07335680A (ja) * | 1994-06-14 | 1995-12-22 | Fujitsu Ltd | 回路基板及びその製造方法、並びに半導体装置のワイヤボンディング方法及び半導体装置の封止方法 |
JPH11330128A (ja) * | 1998-05-19 | 1999-11-30 | Fujitsu Ltd | 半導体装置 |
JP2002203945A (ja) * | 2000-12-28 | 2002-07-19 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2005317860A (ja) * | 2004-04-30 | 2005-11-10 | Fujitsu Ltd | 樹脂封止型半導体装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023033047A1 (ja) * | 2021-09-03 | 2023-03-09 | 株式会社デンソー | 半導体装置 |
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