KR100761861B1 - 정전기를 방지하는 반도체 패키지 - Google Patents
정전기를 방지하는 반도체 패키지 Download PDFInfo
- Publication number
- KR100761861B1 KR100761861B1 KR1020060098865A KR20060098865A KR100761861B1 KR 100761861 B1 KR100761861 B1 KR 100761861B1 KR 1020060098865 A KR1020060098865 A KR 1020060098865A KR 20060098865 A KR20060098865 A KR 20060098865A KR 100761861 B1 KR100761861 B1 KR 100761861B1
- Authority
- KR
- South Korea
- Prior art keywords
- conductive
- semiconductor package
- static electricity
- network
- conductive network
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/1016—Shape being a cuboid
- H01L2924/10161—Shape being a cuboid with a rectangular active surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Elimination Of Static Electricity (AREA)
Abstract
Description
Claims (15)
- 도전성 패턴이 내재된 구조체;상기 구조체의 일면에 부착된 도전성 네트워크(network);상기 도전성 네트워크에 수직하게 배열하면서 부착되어 외부의 정전기를 흡수하는 적어도 하나의 도전성 막대; 및상기 도전성 네트워크부터 전기적으로 전달된 정전기를 외부로 방출하는 접지부를 포함하는 정전기를 방지하는 반도체 패키지.
- 제1항에 있어서, 상기 구조체는 단층의 단일 칩인 것을 특징으로 하는 정전기를 방지하는 반도체 패키지.
- 제1항에 있어서, 상기 구조체는 다층의 단일 칩으로 이루어진 멀티칩인 것을 특징으로 하는 정전기를 방지하는 반도체 패키지.
- 제1항에 있어서, 상기 구조체는 인쇄회로기판인 것을 특징으로 하는 정전기를 방지하는 반도체 패키지.
- 제1항에 있어서, 상기 도전성 네트워크는 상기 구조체의 일면을 판(plane) 형태로 덮는 도전성 판인 것을 특징으로 하는 정전기를 방지하는 반도체 패키지.
- 제1항에 있어서, 상기 도전성 네트워크는 상기 구조체의 일면을 라인(line) 형태로 덮는 도전성 라인인 것을 특징으로 하는 정전기를 방지하는 반도체 패키지.
- 제1항에 있어서, 상기 도전성 막대의 높이가 증가함에 따라 외부에서 유입되는 정전기를 흡수할 수 있는 상기 도전성 네트워크의 유효면적도 증가하는 것을 특징으로 하는 정전기를 방지하는 반도체 패키지.
- 제7항에 있어서, 상기 도전성 막대의 높이는 상기 유효면적의 반경인 것을 특징으로 하는 정전기를 방지하는 반도체 패키지.
- 제1항에 있어서, 상기 도전성 막대는 상기 구조체의 일면이 정전기를 흡수할 수 있도록 일정한 높이를 가지면서 배열하는 것을 특징으로 하는 정전기를 방지하는 반도체 패키지.
- 제1항에 있어서, 상기 도전성 막대는 상기 구조체의 일면이 정전기를 흡수할 수 있는 높이로 부착된 하나의 막대인 것을 특징으로 하는 정전기를 방지하는 반도체 패키지.
- 제1항에 있어서, 상기 도전성 막대는 상기 접지부와 인접하여 위치하는 것을 특징으로 하는 정전기를 방지하는 반도체 패키지.
- 제1항에 있어서, 상기 도전성 막대는 와이어 본딩, 전기도금 및 MEMS 중에서 선택된 어느 하나의 방식으로 형성되는 것을 특징으로 하는 정전기를 방지하는 반도체 패키지.
- 제1항에 있어서, 상기 도전성 네트워크와 상기 접지부는 도전성 와이어에 의해 연결되는 것을 특징으로 하는 정전기를 방지하는 반도체 패키지.
- 제1항에 있어서, 상기 구조체의 일면에는 상기 도전성 네트워크와 절연되면서 상기 구조체 내부의 상기 도전성 패턴과 연결되는 입력패드, 출력패드 및 접지패드를 더 포함하는 것을 특징으로 하는 정전기를 방지하는 반도체 패키지.
- 제14항에 있어서, 상기 도전성 네트워크는 상기 접지패드와 전기적으로 연결되는 것을 특징으로 하는 정전기를 방지하는 반도체 패키지.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060098865A KR100761861B1 (ko) | 2006-10-11 | 2006-10-11 | 정전기를 방지하는 반도체 패키지 |
US11/870,533 US7705433B2 (en) | 2006-10-11 | 2007-10-11 | Semiconductor package preventing generation of static electricity therein |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060098865A KR100761861B1 (ko) | 2006-10-11 | 2006-10-11 | 정전기를 방지하는 반도체 패키지 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR100761861B1 true KR100761861B1 (ko) | 2007-09-28 |
Family
ID=38738732
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020060098865A KR100761861B1 (ko) | 2006-10-11 | 2006-10-11 | 정전기를 방지하는 반도체 패키지 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7705433B2 (ko) |
KR (1) | KR100761861B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101481576B1 (ko) * | 2008-10-06 | 2015-01-14 | 삼성전자주식회사 | 반도체 패키지 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9214431B1 (en) * | 2006-05-25 | 2015-12-15 | Qualcomm Incorporated | On-chip/off-chip magnetic shielding loop |
TWI497679B (zh) * | 2009-11-27 | 2015-08-21 | Advanced Semiconductor Eng | 半導體封裝件及其製造方法 |
US8569894B2 (en) | 2010-01-13 | 2013-10-29 | Advanced Semiconductor Engineering, Inc. | Semiconductor package with single sided substrate design and manufacturing methods thereof |
TWI411075B (zh) | 2010-03-22 | 2013-10-01 | Advanced Semiconductor Eng | 半導體封裝件及其製造方法 |
US8941222B2 (en) | 2010-11-11 | 2015-01-27 | Advanced Semiconductor Engineering Inc. | Wafer level semiconductor package and manufacturing methods thereof |
US9406658B2 (en) | 2010-12-17 | 2016-08-02 | Advanced Semiconductor Engineering, Inc. | Embedded component device and manufacturing methods thereof |
KR101984831B1 (ko) * | 2013-01-31 | 2019-05-31 | 삼성전자 주식회사 | 반도체 패키지 및 그 제조 방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0199245A (ja) * | 1987-10-12 | 1989-04-18 | Mitsubishi Electric Corp | Icパッケージ |
JPH02163958A (ja) * | 1988-12-16 | 1990-06-25 | Fujitsu Ltd | 半導体装置 |
JPH0325960A (ja) * | 1989-06-23 | 1991-02-04 | Nec Kyushu Ltd | 半導体装置 |
JPH0722529A (ja) * | 1993-07-02 | 1995-01-24 | Hitachi Ltd | 半導体チップの静電破壊防止方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2576797B2 (ja) | 1994-09-27 | 1997-01-29 | 日本電気株式会社 | 半導体装置 |
JP2725170B2 (ja) | 1995-11-06 | 1998-03-09 | 春日電機株式会社 | 除帯電電極 |
KR970063691A (ko) | 1996-02-24 | 1997-09-12 | 김광호 | 새로운 형태의 반도체패키지 |
US6011299A (en) * | 1996-07-24 | 2000-01-04 | Digital Equipment Corporation | Apparatus to minimize integrated circuit heatsink E.M.I. radiation |
US6444576B1 (en) * | 2000-06-16 | 2002-09-03 | Chartered Semiconductor Manufacturing, Ltd. | Three dimensional IC package module |
US7355289B2 (en) * | 2005-07-29 | 2008-04-08 | Freescale Semiconductor, Inc. | Packaged integrated circuit with enhanced thermal dissipation |
US7683460B2 (en) * | 2006-09-22 | 2010-03-23 | Infineon Technologies Ag | Module with a shielding and/or heat dissipating element |
-
2006
- 2006-10-11 KR KR1020060098865A patent/KR100761861B1/ko active IP Right Grant
-
2007
- 2007-10-11 US US11/870,533 patent/US7705433B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0199245A (ja) * | 1987-10-12 | 1989-04-18 | Mitsubishi Electric Corp | Icパッケージ |
JPH02163958A (ja) * | 1988-12-16 | 1990-06-25 | Fujitsu Ltd | 半導体装置 |
JPH0325960A (ja) * | 1989-06-23 | 1991-02-04 | Nec Kyushu Ltd | 半導体装置 |
JPH0722529A (ja) * | 1993-07-02 | 1995-01-24 | Hitachi Ltd | 半導体チップの静電破壊防止方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101481576B1 (ko) * | 2008-10-06 | 2015-01-14 | 삼성전자주식회사 | 반도체 패키지 |
Also Published As
Publication number | Publication date |
---|---|
US7705433B2 (en) | 2010-04-27 |
US20080087988A1 (en) | 2008-04-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100761861B1 (ko) | 정전기를 방지하는 반도체 패키지 | |
KR101815754B1 (ko) | 반도체 디바이스 | |
US6812580B1 (en) | Semiconductor package having optimized wire bond positioning | |
CN209929298U (zh) | 芯片封装 | |
JP4452627B2 (ja) | 集積回路アセンブリ | |
JP5512566B2 (ja) | 半導体装置 | |
CN100524740C (zh) | 堆叠型封装 | |
CN103582945A (zh) | 半导体器件 | |
CN103137609A (zh) | 带有电磁屏蔽结构的集成电路封装结构 | |
US9332629B2 (en) | Flip chip bump array with superior signal performance | |
CN108807361B (zh) | 一种芯片堆栈立体封装结构 | |
KR102497583B1 (ko) | 유연한 연결부를 갖는 반도체 장치 및 그 제조방법 | |
US6617524B2 (en) | Packaged integrated circuit and method therefor | |
KR101852989B1 (ko) | 반도체 패키지 장치 | |
KR20070019475A (ko) | 인쇄회로보드, 및 이를 이용한 반도체 패키지 및 멀티스택반도체 패키지 | |
US7135760B2 (en) | Moisture resistant integrated circuit leadframe package | |
JP7103301B2 (ja) | モジュール | |
CN205621726U (zh) | 半导体封装 | |
US6794760B1 (en) | Integrated circuit interconnect | |
KR19990025876A (ko) | 볼 그리드 어레이 반도체 팩키지 | |
US8445996B2 (en) | Semiconductor package | |
CN107632255B (zh) | 测试治具板 | |
US5780772A (en) | Solution to mold wire sweep in fine pitch devices | |
CN211404496U (zh) | 静电防护结构 | |
US7863737B2 (en) | Integrated circuit package system with wire bond pattern |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20120831 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20130902 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20140901 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20150831 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20180831 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20190830 Year of fee payment: 13 |