TWI437660B - Heat treatment device and processing system - Google Patents

Heat treatment device and processing system Download PDF

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Publication number
TWI437660B
TWI437660B TW098109965A TW98109965A TWI437660B TW I437660 B TWI437660 B TW I437660B TW 098109965 A TW098109965 A TW 098109965A TW 98109965 A TW98109965 A TW 98109965A TW I437660 B TWI437660 B TW I437660B
Authority
TW
Taiwan
Prior art keywords
wafer
mounting table
film
gas
heat treatment
Prior art date
Application number
TW098109965A
Other languages
English (en)
Chinese (zh)
Other versions
TW201003831A (en
Inventor
大西正
戶澤茂樹
村木雄介
二藤孝文
Original Assignee
東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京威力科創股份有限公司 filed Critical 東京威力科創股份有限公司
Publication of TW201003831A publication Critical patent/TW201003831A/zh
Application granted granted Critical
Publication of TWI437660B publication Critical patent/TWI437660B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

Landscapes

  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
TW098109965A 2008-03-27 2009-03-26 Heat treatment device and processing system TWI437660B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008083882A JP5352103B2 (ja) 2008-03-27 2008-03-27 熱処理装置および処理システム

Publications (2)

Publication Number Publication Date
TW201003831A TW201003831A (en) 2010-01-16
TWI437660B true TWI437660B (zh) 2014-05-11

Family

ID=41115342

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098109965A TWI437660B (zh) 2008-03-27 2009-03-26 Heat treatment device and processing system

Country Status (4)

Country Link
US (1) US20090242129A1 (https=)
JP (1) JP5352103B2 (https=)
CN (1) CN101546699A (https=)
TW (1) TWI437660B (https=)

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Also Published As

Publication number Publication date
TW201003831A (en) 2010-01-16
JP5352103B2 (ja) 2013-11-27
US20090242129A1 (en) 2009-10-01
JP2009239056A (ja) 2009-10-15
CN101546699A (zh) 2009-09-30

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