TWI434377B - A high frequency module having shielding property and heat dissipation property and a manufacturing method thereof - Google Patents
A high frequency module having shielding property and heat dissipation property and a manufacturing method thereof Download PDFInfo
- Publication number
- TWI434377B TWI434377B TW097125570A TW97125570A TWI434377B TW I434377 B TWI434377 B TW I434377B TW 097125570 A TW097125570 A TW 097125570A TW 97125570 A TW97125570 A TW 97125570A TW I434377 B TWI434377 B TW I434377B
- Authority
- TW
- Taiwan
- Prior art keywords
- resin
- conductive
- frequency module
- shielding
- ground pattern
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0007—Casings
- H05K9/002—Casings with localised screening
- H05K9/0022—Casings with localised screening of components mounted on printed circuit boards [PCB]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19042—Component type being an inductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
本發明係關於一種用在通訊機器、資訊機器等之高頻模組,尤其係關於一種如攜帶式機器之送訊用電力放大器等需要為小型且廉價的高頻模組及其製造方法。
以往,對於該類之高頻模組係要求對於安裝基板之散熱效率或電磁屏蔽性之良好度及小型化。在專利文獻1中係揭示一種具備有安裝半導體元件或被動零件,且以覆蓋前述半導體元件的方式透過導電性熱導電性材料所連接之由導電性熱導電性材料所構成的屏蔽罩(Shield Cap),藉由導電性熱傳導材料連接於接地層的高頻模組。
此外,在專利文獻2中係揭示一種由形成有安裝電子零件之電路塊的電路基板、按該電路基板之各電路塊利用樹脂一體被覆的封裝體、及形成在該封裝體之外表面的屏蔽用金屬層所構成,將該金屬層透過由金屬粉與熱硬化性樹脂所構成的導電性樹脂,連接於形成為電路基板用的接地電極的模組零件。
(專利文獻1)日本特開平10-125830號公報(專利文獻2)日本特開2005-251827號公報
但是,專利文獻1所揭示的高頻模組係將來自半導體元件的熱透過導電性熱傳導材料由屏蔽罩傳導至電路安裝基板。此外,半導體元件或被動零件係由罩件(cap)所覆蓋,因此被遮蔽。但是,由於罩件為金屬製,因此在小型化薄型化方面有所限制。
此外,專利文獻2所揭示的模組零件中,屏蔽用金屬層成為5至15μm,可使厚度比金屬罩薄。但是,該金屬層係藉由無電解鍍敷及電鍍,由5至15μm的Cu導體所構成者,雖可形成為厚度較薄,但是基於鍍敷步驟,較為麻煩而且費用昂貴。
本發明係為解決上述問題點而開發者,目的在提供一種屏蔽性與散熱性佳,而且容易小型化、薄型化,且可廉價製造的高頻模組及其製造方法。
為了解決上述課題,本發明之具有屏蔽性及散熱性之高頻模組係在基板的主面上配置包含配線及接地圖案的電路圖案及電子零件,在其上設置樹脂模塑及屏蔽層,在背面係具有由主面上的電子零件通過基板而設的外部輸入輸出用端子的高頻模組,其特徵為:前述屏蔽層係由導電性樹脂層所構成,前述導電性樹脂層係覆蓋前述樹脂模塑,其下端係連接於前述接地圖案而成。
藉由該構成,由於可使屏蔽層的厚度比習知的金屬罩為薄,因此可減輕使用該屏蔽層之裝置全體的空間,此外
由半導體元件等所發生的熱的放散較為良好,因此可加長電子零件等的壽命。
本發明之具有屏蔽性及散熱性之高頻模組中,形成前述導電性樹脂層的導電性電糊含有金屬粉與熱硬化性樹脂,前述金屬粉係由選自由銀、銅、銀被覆銅粉所成群組的1種或2種以上所構成,具有前述導電性樹脂層的體積電阻率為1×10-4
Ω.cm以下,熱傳導率為5W/m.K以上的高導電性、高熱傳導性。藉此獲得屏蔽性與散熱性更佳的高頻模組。
本發明之具有屏蔽性及散熱性之高頻模組之製造方法,其特徵為具有:在具有預定數之單位分隔的大面積基板的主面上的各單位分隔內配設包含預定配線及接地圖案的電路圖案及電子零件的電路形成步驟;除了設在前述主面上的各單位分隔間端,且配設有接地圖案的切割部以外,施行樹脂模塑的模塑步驟;在前述樹脂模塑上印刷導電性電糊的印刷步驟;及在前述切割部切分為各單位分隔的切割步驟,前述印刷步驟係將前述導電性電糊填充在各單位分隔的樹脂模塑間,與露出於各單位分隔端之切割部的接地圖案相連接,以覆蓋樹脂模塑的方式予以印刷,前述切割步驟係在由被填充在前述樹脂模塑間的導電性樹脂層及與其相連接的接地圖案所構成的切割部,切分成預定數的單位分隔。藉此,可在大面積基板上總括形成多數的單位高頻模組,因此生產效率佳且單價便宜。
以下根據圖示說明本發明之實施形態。第1圖係本發明之具有屏蔽性及散熱性之高頻模組1的模式圖,第2圖至第4圖係具有屏蔽性及散熱性之高頻模組之製造方法的說明圖。
首先概要說明具有屏蔽性及散熱性之高頻模組1的構造。在第1圖中,高頻模組1係在基板2之主面2a上,以包含接地圖案3a或未圖示之訊號線等配線的電路圖案3、及包含積體電路晶片5或電容器、電感器等被動零件6(6a、6b、6c)等的電子零件4而形成有高頻電路。此外,在其上施行將該等電子零件4封入的樹脂模塑7。此外,8係覆蓋其上的屏蔽層,下端係與接地圖案3a相連接。
屏蔽層8係由導電性樹脂所構成,體積電阻率為1×10-4
Ω.cm以下的高導電性,因此由電子零件4所放射的不必要輻射係以低阻抗與接地圖案3a相連接,因此電磁屏蔽效果亦較大。
此外,由於為具有熱傳導率為5W/m.K以上之高熱傳導性者,因此將來自積體電路晶片5等的發熱經由樹脂模塑與屏蔽層而有效率地傳導至接地圖案3a並散熱。
用以形成如上所示之屏蔽層的導電性電糊的摻合例係如以下所示。以熱硬化性樹脂而言,最好將選自環氧樹脂、酚系樹脂、醇酸樹脂、三聚氰胺樹脂、丙烯酸酯樹脂、矽酮樹脂中之1種或2種以上摻雜使用。其中,由耐熱性、密接性的方面來看,以環氧樹脂為佳。
以金屬填充劑而言,係使用銀粉、銅粉、銀被覆銅粉、鎳粉等金屬粉。其中亦以銀粉、銅粉、銀被覆銅粉為佳。
關於金屬填充劑的形狀並無特別限制,例示有樹脂狀、球狀、鱗片狀等。此外,粒徑以1至50μm為佳,以2至16μm為更佳。金屬填充劑係僅使用1種,亦可混合2種以上。
上述金屬填充劑係相對於熱硬化性樹脂100份,摻合400至1300份,最好係摻合500至1000份。若未達400份,熱傳導率會降低,若超過1300份,則會有因增黏而使作業性降低的情形。
本發明中所使用的環氧樹脂硬化劑係以咪唑系硬化劑為佳。
以咪唑系硬化劑之例而言,係列舉咪唑、2-十一烷基咪唑、2-十七烷基咪唑、2-乙基咪唑、2-苯基咪唑、2-乙基-4-甲基咪唑、1-氰基乙基-2-十一烷基咪唑、2-苯基咪唑、2,4-二胺基-6-[2'-甲基咪唑基-(1’)-乙基-S-三嗪。
咪唑系硬化劑係相對於環氧樹脂100重量份,最好摻合1.5至40重量份,以3至20重量份為更佳。若添加份數少於1.5重量份,硬化會不充分,若超過40重量份,則經時所致之增黏程度會變大,而產生印刷性的降低。此外,電糊在保管中增黏,會使作業性惡化。
在基板2的背面2a係設有由主面上的電子零件4通過基板2而設之未圖示的外部輸入輸出用端子,在其前端
形成有焊球9。
藉由該高頻模組,可將因導電性電糊所造成的屏蔽層厚度形成為最小20μm,因此與日本特開平10-125830的金屬罩相比,屏蔽層的厚度可形成為較薄。此外,若以接著性樹脂形成導電性樹脂層本身,亦不需要如金屬罩或金屬鍍敷層所示另外設置與接地圖案的接著劑。
另一方面,如日本特開2005-251827所示藉由金屬鍍敷所得者可形成為較薄,但是在鍍敷時費工且昂貴,相對於此,在本發明品中,係如後所述,可簡單製造,且廉價形成。此外,由半導體元件等所發生的熱的放散較佳,因此電子零件等的壽命會變長。
接著,根據第2圖至第4圖,說明該具有屏蔽性及散熱性之高頻模組之製造方法。
第2圖係電路形成步驟的說明圖,第2圖(a)係正視圖,第2圖(b)係俯視圖。
在具有預定數(在此為簡單起見,形成為4分隔)之單位分隔的大面積基板12的主面上的各單位分隔11(11a、11b、11c、11d)內,形成包含預定的接地圖案3a或未圖示的訊號線等的電路圖案3,在其上的預所定位置對各電子零件4進行表面安裝。
接著,在通過大面積基板12之未圖示的穿通孔而在背面露出的電子零件4的外部輸入輸出端子的前端,以周知的方法形成焊球9。
當大面積基板12為多層時,可在最上層的基板上形
成預定的接地圖案3a,亦可至具有形成在多層部分之內層的接地圖案為止,以切割装置進行切削,在切削部印刷導電性電糊,而將該接地圖案端面與屏蔽層相連接。
第3圖係施行樹脂模塑之模塑步驟的說明圖,第3圖(a)係正視圖,第3圖(b)係俯視圖。
在前述主面上之各單位分隔11a、11b、11c、11d間及周緣的接地圖案3a上,設置仿照各單位分隔的模箱,以覆蓋電子零件4上的方式,流入例如環氧系樹脂,放置且使其硬化而形成樹脂模塑7。
第4圖係在前述樹脂模塑7上印刷導電性電糊而形成屏蔽層8的印刷步驟、及在最後切離成每個單位分隔而形成為高頻模組1的切割步驟的說明圖,第4圖(a)係正視圖、第4圖(b)係俯視圖。
導電性電糊係必須塗覆在樹脂模塑表層與溝部,可藉由一般的網版印刷來形成。實際的印刷亦可以1次印刷進行樹脂模塑,但是亦可藉由僅預先埋設溝部,接著將表層部全體進行塗覆印刷的2階段印刷而形成。
此外,為了避免容易發生在溝部的空洞(void),使用真空印刷機亦為有效的手段。如上所示,藉由屬於通用技術的網版印刷法,輕易形成屏蔽層8。接著,當使所被印刷的導電性電糊加熱硬化時,如第4圖(a)所示,形成與接地圖案3a作電性連接之藉由導電性電糊所成的屏蔽層8。
由基台取出已形成有屏蔽層8的大面積基板,使用切
割装置,利用第4圖(b)所示之上述各單位分隔11a、11b、11c、11d間的切割部13切分,如第1圖所示,不僅模組表面,連側面亦被屬於屏蔽層的導電性樹脂層所覆蓋所示的高頻模組1即告完成。
如上所述,在形成屏蔽層8時,由於可藉由一般的網版印刷而輕易形成,因此可改善因金屬罩所造成之零件體積龐大的問題、因金屬鍍敷所造成的成本高的問題等雙方問題,而可輕易且廉價地製造出具有屏蔽性及散熱性之高頻模組。
1‧‧‧具有屏蔽性及散熱性之高頻模組
2‧‧‧基板
3‧‧‧電路圖案
3a‧‧‧接地圖案
4‧‧‧電子零件
5‧‧‧積體電路晶片
6、6a、6b、6c‧‧‧被動零件
7‧‧‧樹脂模塑
8‧‧‧屏蔽層(導電性樹脂層)
9‧‧‧焊球
11、11a、11b、11c、11d‧‧‧單位分隔
12‧‧‧大面積基板
13‧‧‧切割部
第1圖係顯示本發明之具有屏蔽性及散熱性之高頻模組之構成概要的說明圖。
第2圖係本發明之具有屏蔽性及散熱性之高頻模組之製造方法中的電路形成步驟的說明圖。
第3圖係本發明之具有屏蔽性及散熱性之高頻模組之製造方法中的模塑步驟的說明圖。
第4圖係本發明之具有屏蔽性及散熱性之高頻模組之製造方法中的印刷步驟及切割步驟的說明圖。
1‧‧‧具有屏蔽性及散熱性之高頻模組
2‧‧‧基板
3a‧‧‧接地圖案
4‧‧‧電子零件
5‧‧‧積體電路晶片
6、6a、6b、6c‧‧‧被動零件
7‧‧‧樹脂模塑
8‧‧‧屏蔽層(導電性樹脂層)
9‧‧‧焊球
Claims (2)
- 一種具有屏蔽性及散熱性之高頻模組,係在基板的主面上配置包含配線及接地圖案的電路圖案及電子零件,在其上設置樹脂模塑及屏蔽層,在背面係具有由主面上的電子零件通過基板而設的外部輸入輸出用端子的高頻模組,其特徵為:前述屏蔽層係由厚度為20μm以上的導電性樹脂層所構成,前述導電性樹脂層係覆蓋前述樹脂模塑,其下端係連接於前述接地圖案而成,形成前述導電性樹脂層的導電性電糊係含有金屬粉、與熱硬化性樹脂、與前述熱硬化性樹脂的硬化劑,前述金屬粉係由選自由銀、銅、銀被覆銅粉所成群組的1種或2種以上所構成,並且粒徑為2至16μm,前述熱硬化性樹脂係由環氧樹脂所成,在前述熱硬化性樹脂的硬化劑係使用咪唑系硬化劑,前述金屬粉與前述熱硬化性樹脂的摻合比率係相對於熱硬化性樹脂100重量份,金屬粉為500至1000重量份,前述咪唑系硬化劑與前述熱硬化性樹脂的摻合比率係相對於熱硬化性樹脂100重量份,咪唑系硬化劑為3至20重量份,具有前述導電性樹脂層的體積電阻率為1×10-4 Ω.cm以下,熱傳導率為5W/m.K以上的高導電性、高熱傳導 性,由前述電子零件所被放射的不必要輻射係以低阻抗與前述接地圖案相連接。
- 一種具有屏蔽性及散熱性之高頻模組之製造方法,其特徵為具有:在具有預定數之單位分隔的大面積基板的主面上的各單位分隔內配設包含預定配線及接地圖案的電路圖案及電子零件的電路形成步驟;除了設在前述主面上的各單位分隔間端,且配設有接地圖案的切割部以外,施行樹脂模塑的模塑步驟;在前述樹脂模塑上印刷導電性電糊的印刷步驟;及在前述切割部切分為各單位分隔的切割步驟,前述印刷步驟係將前述導電性電糊填充在各單位分隔的樹脂模塑間,經加熱硬化,與露出於各單位分隔端之切割部的接地圖案相連接,以覆蓋樹脂模塑的方式予以印刷,前述切割步驟係在由被填充在前述樹脂模塑間的導電性樹脂層及與其相連接的接地圖案所構成的切割部,切分成預定數的單位分隔。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007179473A JP2009016715A (ja) | 2007-07-09 | 2007-07-09 | シールド及び放熱性を有する高周波モジュール及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200917430A TW200917430A (en) | 2009-04-16 |
TWI434377B true TWI434377B (zh) | 2014-04-11 |
Family
ID=40228422
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW097125570A TWI434377B (zh) | 2007-07-09 | 2008-07-07 | A high frequency module having shielding property and heat dissipation property and a manufacturing method thereof |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP2009016715A (zh) |
KR (1) | KR20100045461A (zh) |
CN (1) | CN101690442B (zh) |
TW (1) | TWI434377B (zh) |
WO (1) | WO2009008243A1 (zh) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010225620A (ja) * | 2009-03-19 | 2010-10-07 | Panasonic Corp | 回路モジュール |
JP5416458B2 (ja) * | 2009-04-02 | 2014-02-12 | タツタ電線株式会社 | シールドおよび放熱性を有する高周波モジュールの製造方法 |
JP5045727B2 (ja) * | 2009-10-21 | 2012-10-10 | ソニー株式会社 | 高周波モジュールおよび受信装置 |
JP2012019091A (ja) * | 2010-07-08 | 2012-01-26 | Sony Corp | モジュールおよび携帯端末 |
JP5664666B2 (ja) * | 2011-01-07 | 2015-02-04 | 株式会社村田製作所 | 電子部品モジュールの製造方法、及び電子部品モジュール |
WO2012101857A1 (ja) * | 2011-01-28 | 2012-08-02 | 株式会社村田製作所 | モジュール基板 |
JP5624903B2 (ja) * | 2011-01-31 | 2014-11-12 | 京セラドキュメントソリューションズ株式会社 | 基板装置 |
KR20120131530A (ko) | 2011-05-25 | 2012-12-05 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
JP5278579B2 (ja) * | 2012-05-25 | 2013-09-04 | ソニー株式会社 | 高周波モジュールおよび受信装置 |
JP2013247339A (ja) * | 2012-05-29 | 2013-12-09 | Tdk Corp | 電子部品モジュールの製造方法 |
TWI535371B (zh) * | 2012-09-28 | 2016-05-21 | 西凱渥資訊處理科技公司 | 用於提供模組內射頻隔離之系統及方法 |
CN104159391A (zh) * | 2013-05-15 | 2014-11-19 | 中兴通讯股份有限公司 | 一种用于终端的散热装置及终端 |
JP5527785B1 (ja) * | 2013-08-08 | 2014-06-25 | 太陽誘電株式会社 | 回路モジュール及び回路モジュールの製造方法 |
JP6190528B2 (ja) | 2014-06-02 | 2017-08-30 | タツタ電線株式会社 | 導電性接着フィルム、プリント回路基板、及び、電子機器 |
CN105811891A (zh) * | 2016-04-20 | 2016-07-27 | 佛山臻智微芯科技有限公司 | 减低移动通信多级功率放大器中带内噪声的结构和方法 |
CN106340498B (zh) * | 2016-10-20 | 2018-11-09 | 江苏长电科技股份有限公司 | 一种具有电磁屏蔽接地功能的封装结构及其制造方法 |
US10373917B2 (en) * | 2017-12-05 | 2019-08-06 | Tdk Corporation | Electronic circuit package using conductive sealing material |
CN108493176B (zh) * | 2018-03-27 | 2020-07-10 | 浙江中正智能科技有限公司 | 一种指纹识别芯片装置及其制造方法 |
DE102018116682A1 (de) * | 2018-07-10 | 2020-01-16 | Elringklinger Ag | Wärmeabschirmvorrichtung, insbesondere an lokal unterschiedlich auftretende Wärmeeinträge pro Fläche anpassbare Wärmeabschirmvorrichtung |
JP7503401B2 (ja) | 2020-03-19 | 2024-06-20 | 太陽誘電株式会社 | コイル部品及び電子機器 |
CN112701096A (zh) * | 2020-12-22 | 2021-04-23 | 杰群电子科技(东莞)有限公司 | 一种半导体模组封装工艺及半导体模组 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2724079B2 (ja) * | 1992-10-06 | 1998-03-09 | 京セラ株式会社 | 半導体素子収納用パッケージ |
JP2673928B2 (ja) * | 1993-05-11 | 1997-11-05 | 株式会社巴川製紙所 | 電子部品素子封止用蓋材 |
JP4662324B2 (ja) * | 2002-11-18 | 2011-03-30 | 太陽誘電株式会社 | 回路モジュール |
JP3842229B2 (ja) * | 2003-02-27 | 2006-11-08 | 太陽誘電株式会社 | 回路モジュール |
JP4020874B2 (ja) * | 2003-03-13 | 2007-12-12 | 三洋電機株式会社 | 半導体装置およびその製造方法 |
JP2005019900A (ja) * | 2003-06-27 | 2005-01-20 | Kyocera Corp | 電子装置 |
JP4903576B2 (ja) * | 2004-10-28 | 2012-03-28 | 京セラ株式会社 | 電子部品モジュール及び無線通信機器 |
KR100874302B1 (ko) * | 2005-02-18 | 2008-12-18 | 도요 잉키 세이조 가부시끼가이샤 | 전자파 차폐성 접착필름, 그 제조방법 및 피착체의 전자파차폐방법 |
JP2006286915A (ja) * | 2005-03-31 | 2006-10-19 | Taiyo Yuden Co Ltd | 回路モジュール |
-
2007
- 2007-07-09 JP JP2007179473A patent/JP2009016715A/ja active Pending
-
2008
- 2008-06-13 KR KR1020107002591A patent/KR20100045461A/ko active Search and Examination
- 2008-06-13 CN CN2008800236271A patent/CN101690442B/zh active Active
- 2008-06-13 WO PCT/JP2008/060836 patent/WO2009008243A1/ja active Application Filing
- 2008-07-07 TW TW097125570A patent/TWI434377B/zh active
Also Published As
Publication number | Publication date |
---|---|
CN101690442B (zh) | 2012-10-10 |
WO2009008243A1 (ja) | 2009-01-15 |
CN101690442A (zh) | 2010-03-31 |
KR20100045461A (ko) | 2010-05-03 |
TW200917430A (en) | 2009-04-16 |
JP2009016715A (ja) | 2009-01-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI434377B (zh) | A high frequency module having shielding property and heat dissipation property and a manufacturing method thereof | |
US8022511B2 (en) | Semiconductor device packages with electromagnetic interference shielding | |
US7348662B2 (en) | Composite multi-layer substrate and module using the substrate | |
US8410584B2 (en) | Semiconductor device packages with electromagnetic interference shielding | |
US8350367B2 (en) | Semiconductor device packages with electromagnetic interference shielding | |
US7989928B2 (en) | Semiconductor device packages with electromagnetic interference shielding | |
US8212339B2 (en) | Semiconductor device packages with electromagnetic interference shielding | |
US7829981B2 (en) | Semiconductor device packages with electromagnetic interference shielding | |
US7261596B2 (en) | Shielded semiconductor device | |
US20050270748A1 (en) | Substrate structure integrated with passive components | |
US20040217472A1 (en) | Low cost chip carrier with integrated antenna, heat sink, or EMI shielding functions manufactured from conductive loaded resin-based materials | |
US20180130761A1 (en) | Semiconductor package, manufacturing method thereof, and electronic element module using the same | |
US20080024998A1 (en) | Substrate structure integrated with passive components | |
JP3894091B2 (ja) | Icチップ内蔵多層基板及びその製造方法 | |
CN112271165A (zh) | 半导体封装结构及其制造方法和半导体器件 | |
CN106711123B (zh) | 半导体封装件及其制造方法 | |
KR20150035251A (ko) | 외부접속단자부와 외부접속단자부를 갖는 반도체 패키지 및 그들의 제조방법 | |
US20080023821A1 (en) | Substrate structure integrated with passive components | |
CN105529916B (zh) | 电子模块及其制造方法 | |
JP2012015548A (ja) | シールド及び放熱性を有する高周波モジュール及びその製造方法 | |
CN1731915B (zh) | 多层电路板装置 | |
KR20120039163A (ko) | 인쇄회로기판 및 그 제조방법 | |
US20240363503A1 (en) | Semiconductor devices with double-sided fanout chip packages | |
US20080272468A1 (en) | Grounded shield for blocking electromagnetic interference in an integrated circuit package | |
CN112086434A (zh) | 电子组件模块 |