WO2009008243A1 - シールド及び放熱性を有する高周波モジュール及びその製造方法 - Google Patents

シールド及び放熱性を有する高周波モジュール及びその製造方法 Download PDF

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Publication number
WO2009008243A1
WO2009008243A1 PCT/JP2008/060836 JP2008060836W WO2009008243A1 WO 2009008243 A1 WO2009008243 A1 WO 2009008243A1 JP 2008060836 W JP2008060836 W JP 2008060836W WO 2009008243 A1 WO2009008243 A1 WO 2009008243A1
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WIPO (PCT)
Prior art keywords
high frequency
frequency module
manufacturing
shield layer
shielding
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PCT/JP2008/060836
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English (en)
French (fr)
Inventor
Kenichiro Sugimoto
Hisatoshi Murakami
Original Assignee
Tatsuta System Electronics Co., Ltd.
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Publication date
Application filed by Tatsuta System Electronics Co., Ltd. filed Critical Tatsuta System Electronics Co., Ltd.
Priority to CN2008800236271A priority Critical patent/CN101690442B/zh
Publication of WO2009008243A1 publication Critical patent/WO2009008243A1/ja

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00—Screening of apparatus or components against electric or magnetic fields
    • H05K9/0007—Casings
    • H05K9/002—Casings with localised screening
    • H05K9/0022—Casings with localised screening of components mounted on printed circuit boards [PCB]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
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    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
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    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

　シールド性と、放熱性がよく、小型・薄型化が容易で、安価に製造できる高周波モジュール及びその製造方法を提供する。 基板（２）の主面上にグランドパターン（３ａ）を含む回路パターン及び電子部品（４）を配し、その上に樹脂モールド（７）及びシールド層（８）を設けた高周波モジュール（１）であって、シールド層（８）を導電性樹脂とし、その下端がグランドパターン（３ａ）に接続されるように構成する。 製造方法としては、複数の単位区画を有する大面積基板を用い、予め各単位区画に回路を形成し、樹脂のモールドと導電性ペーストの印刷工程を経た後切り分ける。
PCT/JP2008/060836 2007-07-09 2008-06-13 シールド及び放熱性を有する高周波モジュール及びその製造方法 WO2009008243A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2008800236271A CN101690442B (zh) 2007-07-09 2008-06-13 具有屏蔽及散热性的高频模块及其制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007179473A JP2009016715A (ja) 2007-07-09 2007-07-09 シールド及び放熱性を有する高周波モジュール及びその製造方法
JP2007-179473 2007-07-09

Publications (1)

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WO2009008243A1 true WO2009008243A1 (ja) 2009-01-15

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PCT/JP2008/060836 WO2009008243A1 (ja) 2007-07-09 2008-06-13 シールド及び放熱性を有する高周波モジュール及びその製造方法

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JP (1) JP2009016715A (ja)
KR (1) KR20100045461A (ja)
CN (1) CN101690442B (ja)
TW (1) TWI434377B (ja)
WO (1) WO2009008243A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2405731A3 (en) * 2010-07-08 2013-09-04 Sony Corporation Module and portable terminal

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010225620A (ja) * 2009-03-19 2010-10-07 Panasonic Corp 回路モジュール
JP5416458B2 (ja) * 2009-04-02 2014-02-12 タツタ電線株式会社 シールドおよび放熱性を有する高周波モジュールの製造方法
JP5045727B2 (ja) * 2009-10-21 2012-10-10 ソニー株式会社 高周波モジュールおよび受信装置
WO2012093690A1 (ja) * 2011-01-07 2012-07-12 株式会社村田製作所 電子部品モジュールの製造方法、及び電子部品モジュール
JP5633582B2 (ja) * 2011-01-28 2014-12-03 株式会社村田製作所 モジュール基板
JP5624903B2 (ja) * 2011-01-31 2014-11-12 京セラドキュメントソリューションズ株式会社 基板装置
KR20120131530A (ko) 2011-05-25 2012-12-05 삼성전자주식회사 반도체 장치 및 그 제조 방법
JP5278579B2 (ja) * 2012-05-25 2013-09-04 ソニー株式会社 高周波モジュールおよび受信装置
JP2013247339A (ja) * 2012-05-29 2013-12-09 Tdk Corp 電子部品モジュールの製造方法
WO2014052796A1 (en) * 2012-09-28 2014-04-03 Skyworks Solutions, Inc. Systems and methods for providing intramodule radio frequency isolation
CN104159391A (zh) * 2013-05-15 2014-11-19 中兴通讯股份有限公司 一种用于终端的散热装置及终端
JP5527785B1 (ja) * 2013-08-08 2014-06-25 太陽誘電株式会社 回路モジュール及び回路モジュールの製造方法
JP6190528B2 (ja) 2014-06-02 2017-08-30 タツタ電線株式会社 導電性接着フィルム、プリント回路基板、及び、電子機器
CN105811891A (zh) * 2016-04-20 2016-07-27 佛山臻智微芯科技有限公司 减低移动通信多级功率放大器中带内噪声的结构和方法
CN106340498B (zh) * 2016-10-20 2018-11-09 江苏长电科技股份有限公司 一种具有电磁屏蔽接地功能的封装结构及其制造方法
US10373917B2 (en) * 2017-12-05 2019-08-06 Tdk Corporation Electronic circuit package using conductive sealing material
CN108493176B (zh) * 2018-03-27 2020-07-10 浙江中正智能科技有限公司 一种指纹识别芯片装置及其制造方法
DE102018116682A1 (de) * 2018-07-10 2020-01-16 Elringklinger Ag Wärmeabschirmvorrichtung, insbesondere an lokal unterschiedlich auftretende Wärmeeinträge pro Fläche anpassbare Wärmeabschirmvorrichtung
JP7503401B2 (ja) 2020-03-19 2024-06-20 太陽誘電株式会社 コイル部品及び電子機器
CN112701096A (zh) * 2020-12-22 2021-04-23 杰群电子科技（东莞）有限公司 一种半导体模组封装工艺及半导体模组

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004172176A (ja) * 2002-11-18 2004-06-17 Taiyo Yuden Co Ltd 回路モジュール
JP2004260103A (ja) * 2003-02-27 2004-09-16 Taiyo Yuden Co Ltd 回路モジュール
JP2004297054A (ja) * 2003-03-13 2004-10-21 Sanyo Electric Co Ltd 半導体装置およびその製造方法
JP2005019900A (ja) * 2003-06-27 2005-01-20 Kyocera Corp 電子装置
WO2006046713A1 (ja) * 2004-10-28 2006-05-04 Kyocera Corporation 電子部品モジュール及び無線通信機器
JP2006286915A (ja) * 2005-03-31 2006-10-19 Taiyo Yuden Co Ltd 回路モジュール

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2724079B2 (ja) * 1992-10-06 1998-03-09 京セラ株式会社 半導体素子収納用パッケージ
JP2673928B2 (ja) * 1993-05-11 1997-11-05 株式会社巴川製紙所 電子部品素子封止用蓋材
CN100584180C (zh) * 2005-02-18 2010-01-20 东洋油墨制造株式会社 电磁波屏蔽性粘合薄膜、其制备方法以及被粘合物的电磁波屏蔽方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004172176A (ja) * 2002-11-18 2004-06-17 Taiyo Yuden Co Ltd 回路モジュール
JP2004260103A (ja) * 2003-02-27 2004-09-16 Taiyo Yuden Co Ltd 回路モジュール
JP2004297054A (ja) * 2003-03-13 2004-10-21 Sanyo Electric Co Ltd 半導体装置およびその製造方法
JP2005019900A (ja) * 2003-06-27 2005-01-20 Kyocera Corp 電子装置
WO2006046713A1 (ja) * 2004-10-28 2006-05-04 Kyocera Corporation 電子部品モジュール及び無線通信機器
JP2006286915A (ja) * 2005-03-31 2006-10-19 Taiyo Yuden Co Ltd 回路モジュール

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2405731A3 (en) * 2010-07-08 2013-09-04 Sony Corporation Module and portable terminal

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JP2009016715A (ja) 2009-01-22
KR20100045461A (ko) 2010-05-03
TW200917430A (en) 2009-04-16
CN101690442A (zh) 2010-03-31
CN101690442B (zh) 2012-10-10
TWI434377B (zh) 2014-04-11

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