JP2009016715A - シールド及び放熱性を有する高周波モジュール及びその製造方法 - Google Patents

シールド及び放熱性を有する高周波モジュール及びその製造方法 Download PDF

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Publication number
JP2009016715A
JP2009016715A JP2007179473A JP2007179473A JP2009016715A JP 2009016715 A JP2009016715 A JP 2009016715A JP 2007179473 A JP2007179473 A JP 2007179473A JP 2007179473 A JP2007179473 A JP 2007179473A JP 2009016715 A JP2009016715 A JP 2009016715A
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Japan
Prior art keywords
frequency module
resin
ground pattern
dicing
conductive
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Pending
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JP2007179473A
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English (en)
Japanese (ja)
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JP2009016715A5 (zh
Inventor
Kenichiro Sugimoto
健一朗 杉本
Hisatoshi Murakami
久敏 村上
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Tatsuta System Electronics Co Ltd
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Tatsuta System Electronics Co Ltd
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Publication date
Application filed by Tatsuta System Electronics Co Ltd filed Critical Tatsuta System Electronics Co Ltd
Priority to JP2007179473A priority Critical patent/JP2009016715A/ja
Priority to KR1020107002591A priority patent/KR20100045461A/ko
Priority to CN2008800236271A priority patent/CN101690442B/zh
Priority to PCT/JP2008/060836 priority patent/WO2009008243A1/ja
Priority to TW097125570A priority patent/TWI434377B/zh
Publication of JP2009016715A publication Critical patent/JP2009016715A/ja
Publication of JP2009016715A5 publication Critical patent/JP2009016715A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00—Screening of apparatus or components against electric or magnetic fields
    • H05K9/0007—Casings
    • H05K9/002—Casings with localised screening
    • H05K9/0022—Casings with localised screening of components mounted on printed circuit boards [PCB]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
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    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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    • H01L2224/161—Disposition
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    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP2007179473A 2007-07-09 2007-07-09 シールド及び放熱性を有する高周波モジュール及びその製造方法 Pending JP2009016715A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2007179473A JP2009016715A (ja) 2007-07-09 2007-07-09 シールド及び放熱性を有する高周波モジュール及びその製造方法
KR1020107002591A KR20100045461A (ko) 2007-07-09 2008-06-13 쉴드 및 방열성을 가지는 고주파 모듈 및 그의 제조 방법
CN2008800236271A CN101690442B (zh) 2007-07-09 2008-06-13 具有屏蔽及散热性的高频模块及其制造方法
PCT/JP2008/060836 WO2009008243A1 (ja) 2007-07-09 2008-06-13 シールド及び放熱性を有する高周波モジュール及びその製造方法
TW097125570A TWI434377B (zh) 2007-07-09 2008-07-07 A high frequency module having shielding property and heat dissipation property and a manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007179473A JP2009016715A (ja) 2007-07-09 2007-07-09 シールド及び放熱性を有する高周波モジュール及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011220028A Division JP2012015548A (ja) 2011-10-04 2011-10-04 シールド及び放熱性を有する高周波モジュール及びその製造方法

Publications (2)

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JP2009016715A true JP2009016715A (ja) 2009-01-22
JP2009016715A5 JP2009016715A5 (zh) 2009-11-19

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JP2007179473A Pending JP2009016715A (ja) 2007-07-09 2007-07-09 シールド及び放熱性を有する高周波モジュール及びその製造方法

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Country Link
JP (1) JP2009016715A (zh)
KR (1) KR20100045461A (zh)
CN (1) CN101690442B (zh)
TW (1) TWI434377B (zh)
WO (1) WO2009008243A1 (zh)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010106599A1 (ja) * 2009-03-19 2010-09-23 パナソニック株式会社 回路モジュール及び電子機器
WO2010113687A1 (ja) * 2009-04-02 2010-10-07 タツタ電線株式会社 シールドおよび放熱性を有する高周波モジュールおよびその製造方法
JP2011091574A (ja) * 2009-10-21 2011-05-06 Sony Corp 高周波モジュールおよび受信装置
WO2012101857A1 (ja) * 2011-01-28 2012-08-02 株式会社村田製作所 モジュール基板
JP2012160530A (ja) * 2011-01-31 2012-08-23 Kyocera Document Solutions Inc 基板装置
JP2012191654A (ja) * 2012-05-25 2012-10-04 Sony Corp 高周波モジュールおよび受信装置
JP2013247339A (ja) * 2012-05-29 2013-12-09 Tdk Corp 電子部品モジュールの製造方法
WO2014052796A1 (en) * 2012-09-28 2014-04-03 Skyworks Solutions, Inc. Systems and methods for providing intramodule radio frequency isolation
JPWO2012093690A1 (ja) * 2011-01-07 2014-06-09 株式会社村田製作所 電子部品モジュールの製造方法、及び電子部品モジュール
US8937370B2 (en) 2011-05-25 2015-01-20 Samsung Electronics Co., Ltd. Memory device and fabricating method thereof
KR20170013202A (ko) 2014-06-02 2017-02-06 다츠다 덴센 가부시키가이샤 도전성 접착 필름, 프린트 회로 기판, 및 전자 기기
JP7503401B2 (ja) 2020-03-19 2024-06-20 太陽誘電株式会社 コイル部品及び電子機器

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JP2012019091A (ja) * 2010-07-08 2012-01-26 Sony Corp モジュールおよび携帯端末
CN104159391A (zh) * 2013-05-15 2014-11-19 中兴通讯股份有限公司 一种用于终端的散热装置及终端
JP5527785B1 (ja) * 2013-08-08 2014-06-25 太陽誘電株式会社 回路モジュール及び回路モジュールの製造方法
CN105811891A (zh) * 2016-04-20 2016-07-27 佛山臻智微芯科技有限公司 减低移动通信多级功率放大器中带内噪声的结构和方法
CN106340498B (zh) * 2016-10-20 2018-11-09 江苏长电科技股份有限公司 一种具有电磁屏蔽接地功能的封装结构及其制造方法
US10373917B2 (en) * 2017-12-05 2019-08-06 Tdk Corporation Electronic circuit package using conductive sealing material
CN108493176B (zh) * 2018-03-27 2020-07-10 浙江中正智能科技有限公司 一种指纹识别芯片装置及其制造方法
DE102018116682A1 (de) * 2018-07-10 2020-01-16 Elringklinger Ag Wärmeabschirmvorrichtung, insbesondere an lokal unterschiedlich auftretende Wärmeeinträge pro Fläche anpassbare Wärmeabschirmvorrichtung
CN112701096A (zh) * 2020-12-22 2021-04-23 杰群电子科技（东莞）有限公司 一种半导体模组封装工艺及半导体模组

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06120362A (ja) * 1992-10-06 1994-04-28 Kyocera Corp 半導体素子収納用パッケージ
JPH06326204A (ja) * 1993-05-11 1994-11-25 Tomoegawa Paper Co Ltd 電子部品素子封止用蓋材
JP2004172176A (ja) * 2002-11-18 2004-06-17 Taiyo Yuden Co Ltd 回路モジュール
WO2006046713A1 (ja) * 2004-10-28 2006-05-04 Kyocera Corporation 電子部品モジュール及び無線通信機器
WO2006088127A1 (ja) * 2005-02-18 2006-08-24 Toyo Ink Manufacturing Co., Ltd. 電磁波シールド性接着フィルム及びその製造方法、並びに被着体の電磁波遮蔽方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3842229B2 (ja) * 2003-02-27 2006-11-08 太陽誘電株式会社 回路モジュール
JP4020874B2 (ja) * 2003-03-13 2007-12-12 三洋電機株式会社 半導体装置およびその製造方法
JP2005019900A (ja) * 2003-06-27 2005-01-20 Kyocera Corp 電子装置
JP2006286915A (ja) * 2005-03-31 2006-10-19 Taiyo Yuden Co Ltd 回路モジュール

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06120362A (ja) * 1992-10-06 1994-04-28 Kyocera Corp 半導体素子収納用パッケージ
JPH06326204A (ja) * 1993-05-11 1994-11-25 Tomoegawa Paper Co Ltd 電子部品素子封止用蓋材
JP2004172176A (ja) * 2002-11-18 2004-06-17 Taiyo Yuden Co Ltd 回路モジュール
WO2006046713A1 (ja) * 2004-10-28 2006-05-04 Kyocera Corporation 電子部品モジュール及び無線通信機器
WO2006088127A1 (ja) * 2005-02-18 2006-08-24 Toyo Ink Manufacturing Co., Ltd. 電磁波シールド性接着フィルム及びその製造方法、並びに被着体の電磁波遮蔽方法

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WO2010113687A1 (ja) * 2009-04-02 2010-10-07 タツタ電線株式会社 シールドおよび放熱性を有する高周波モジュールおよびその製造方法
JP2010245139A (ja) * 2009-04-02 2010-10-28 Tatsuta Electric Wire & Cable Co Ltd シールドおよび放熱性を有する高周波モジュールおよびその製造方法
JP2011091574A (ja) * 2009-10-21 2011-05-06 Sony Corp 高周波モジュールおよび受信装置
US8923748B2 (en) 2009-10-21 2014-12-30 Sony Corporation High frequency module and receiver
JP5664666B2 (ja) * 2011-01-07 2015-02-04 株式会社村田製作所 電子部品モジュールの製造方法、及び電子部品モジュール
JPWO2012093690A1 (ja) * 2011-01-07 2014-06-09 株式会社村田製作所 電子部品モジュールの製造方法、及び電子部品モジュール
JP5633582B2 (ja) * 2011-01-28 2014-12-03 株式会社村田製作所 モジュール基板
WO2012101857A1 (ja) * 2011-01-28 2012-08-02 株式会社村田製作所 モジュール基板
JP2012160530A (ja) * 2011-01-31 2012-08-23 Kyocera Document Solutions Inc 基板装置
US8937370B2 (en) 2011-05-25 2015-01-20 Samsung Electronics Co., Ltd. Memory device and fabricating method thereof
JP2012191654A (ja) * 2012-05-25 2012-10-04 Sony Corp 高周波モジュールおよび受信装置
JP2013247339A (ja) * 2012-05-29 2013-12-09 Tdk Corp 電子部品モジュールの製造方法
WO2014052796A1 (en) * 2012-09-28 2014-04-03 Skyworks Solutions, Inc. Systems and methods for providing intramodule radio frequency isolation
US9202747B2 (en) 2012-09-28 2015-12-01 Skyworks Solutions, Inc. Segmented conductive top layer for radio frequency isolation
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US9214387B2 (en) 2012-09-28 2015-12-15 Skyworks Solutions, Inc. Systems and methods for providing intramodule radio frequency isolation
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