TWI431744B - 半導體裝置及其製法 - Google Patents

半導體裝置及其製法 Download PDF

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Publication number
TWI431744B
TWI431744B TW100105364A TW100105364A TWI431744B TW I431744 B TWI431744 B TW I431744B TW 100105364 A TW100105364 A TW 100105364A TW 100105364 A TW100105364 A TW 100105364A TW I431744 B TWI431744 B TW I431744B
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Taiwan
Prior art keywords
width
layer
photoresist
base portion
opening
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TW100105364A
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English (en)
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TW201209976A (en
Inventor
Cheng Chung Lin
Chung Shi Liu
Meng Wei Chou
Kuo Cheng Lin
Wen Hsiung Lu
Chien Ling Hwang
Ying Jui Huang
De Yuan Lu
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Taiwan Semiconductor Mfg
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Publication of TW201209976A publication Critical patent/TW201209976A/zh
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Publication of TWI431744B publication Critical patent/TWI431744B/zh

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Description

半導體裝置及其製法
本發明係有關於一種積體電路，且特別是有關於一種柱狀凸塊結構與其製法。
對於高階電子電路，特別是對於在半導體製程中作為積體電路(integrated circuits,ICs)的電路而言，需要使用一柱狀物(pillar)或圓柱狀物(column)位於積體電路端點(terminal)之上，以形成一柱狀焊料凸塊(pillar solder bump)或圓柱狀焊料凸塊(column solder bump)或焊接圓柱接觸(solder column contact)。在一封裝(packaging)或導線(interconnection)的習知覆晶(flip chip)方法中，焊料凸塊(solder bump)用於將一單晶積體電路(其中該單晶積體電路(monolithic IC)可能是一具有主動或被動電路元件及連接點(connections)形成於其上的矽基板，或者也可能是其他半導體基材，包括砷化鎵(gallium arsenide,GaAs)、絕緣層上覆矽(silicon-on-insulator,SOI)及矽鍺(silicon germanium))的外部端點(external terminal)耦合至一封裝基板或電路板。有時候也會加入一中介層(interposer)，並將積體電路固定於中介層上，接著再將具有積體電路之中介層固定於該電路板或封裝基板上。中介層用於提供晶粒(die)與應力消除裝置(stress relief)較佳的熱匹配性(thermal matching)。這些積體電路元件可能具有數十個或數百個輸入及輸出端點，這些端點係用於接收或傳送訊號及/或耦合至電源供應連接點。在某些積體電路設計中，這些端點設置於積體電路的周邊位置，並且遠離主動電路(active circuitry)。在較高階或較複雜的積體電路中，這些端點可設置於主動區域之上，並且位於積體電路內部的主動元件之上。在記憶體積體電路中，有時候會使用一中心墊(center-pad)。
在一覆晶應用中，積體電路係以面朝下(翻轉)的方向設置於基板上。端點開口形成於一保護絕緣層中，其中該保護絕緣層又稱為鈍化層且位於包括積體電路的晶圓上，其中鈍化層位於積體電路元件的表面上。積體電路的導電性輸入/輸出端點暴露於這些開口中。焊料(包括無鉛焊接材料)凸塊、焊接圓柱(solder column)或焊球設置於這些端點之上。可利用導電材料自積體電路的表面延伸，以形成半球狀或圓柱狀焊料凸塊。這些焊料凸塊或焊接圓柱接著用於形成積體電路的外部接觸。這些焊料凸塊可利用”晶圓規模(wafer scale)”或”晶圓等級(wafer level)”製程方法形成於完整的積體電路上，或者，可於晶圓切割成個別的積體電路元件(又稱為晶塊，dice)之後加入焊料連接點(solder connector)。目前，採用晶圓等級(wafer level)的凸塊加工(bumping operation)技術者有逐漸增加的趨勢。
總之，一熱焊接迴焊製程(thermal solder reflow process)通常會使焊料凸塊熔化隨後迴焊，以完成覆晶積體電路與基板之間的機械接觸與電性接觸。基板可能是樹脂或環氧化物、層壓板(laminated board)、薄膜、印刷電路板或是其他矽元件。在熱迴焊(thermal reflow)的過程中，焊料凸塊、焊球或焊接圓柱(這些焊料可能是含鉛焊料或無鉛焊料)先熔化隨後冷卻，藉以在積體電路的端點與基板之間形成永久機械性固定且電性導通的連接。已結合之覆晶積體電路與基板接著被封裝成一單一積體電路。一般而言，可採用球狀柵格陣列封裝(ball grid array)或針腳柵格陣列封裝(pin grid array)完成這些覆晶封裝。另外，在一多晶模組中，覆晶可與其他同為覆晶的積體電路結合，或者可以使用焊線接合(wire bond connection)。例如，有時候記憶體元件，例如快閃非揮發性元件(FLASH nonvolatile device)，以及利用快閃元件進行程式或資料儲存的處理器(processor)，兩者係結合在單一封裝元件之中。積體電路元件可利用一較大的基板、中介層或電路板採取垂直堆疊或水平並排的方式設置。
在目前的晶圓等級(wafer level)製程中，晶圓通常藉由一晶圓規模(wafer scale)的程序進行凸塊加工。至少直到焊料凸塊完全形成於晶圓之每一個元件上，該晶圓被視為一個單位進行處理，接著可進行一切割程序，以將積體電路分割成個別的晶塊(dice)或晶粒(dies)。之後這些經過凸塊接合的晶粒各自進行加工處理。在一覆晶應用中，翻轉晶粒使其面向封裝基板或中介層，並將焊料凸塊對準位於基板上之焊接墊(solder pad)，進行一熱迴焊(thermal reflow)製程使焊料凸塊熔化，在晶粒(die)的端點與基板的端點之間形成一電性及機械性連接，藉此完成組裝(assembly)程序。組裝(assembly)程序通常包括於迴焊之後添加一底部填充(underfill,UF)材料，藉以在該元件使用時所產生的熱循環過程中更進一步地保護焊接連接點。
由於工業界進一步地推動晶圓級製程(wafer level processing,WLP)，導致在晶圓等級下實施的封裝步驟增加，因此在對個別晶塊實施的封裝步驟隨之減少。然而，各種晶圓等級及晶粒加工等級的步驟目前仍受到採用。
最近，半導體工業已趨向採用”無鉛(lead free)”封裝及無鉛元件連接點技術。此趨勢逐漸致使廠商採用無鉛焊料凸塊及無鉛焊球形成積體電路與封裝之間的連接。這些無鉛焊料由錫(tin)或錫合金(tin alloy)所組成，其中錫合金包括，例如銀(silver)、鎳(nickel)、銅(copper)或其他材料。這些無鉛焊料成分為共熔的(eutectic)，亦即，其中所有材料皆具有一相同的熔點。相較於使用含鉛焊料或焊球，使用無鉛焊料對環境、從業人員以及消費者皆較為安全。然而，使用無鉛焊料的焊接連接點之品質與可靠度始終無法滿足需求。
此外，當元件尺寸持續下降，積體電路上之端點的腳距(pitch)也隨之降低。相鄰凸塊之間的橋接(bridging)現象將導致電性短路。另外，焊料凸塊容易受到機械應力而變形，因此在覆晶基材組裝之完成品中的凸塊高度可能不一致，且凸塊經過再熔解與回焊程序之後，凸塊之間的間距可能也不均等。再者，在密集腳距的元件中使用底部填充(underfill,UF)與焊料凸塊，將於底部填充(underfill,UF)材料中留下孔隙(void)，進而產生其他問題，例如龜裂(cracking)及熱點(hot spot)等等。
對於腳距較密集的元件而言，解決方法之一為利用具有焊料(通常為無鉛焊料)頂蓋(solder cap)的銅或其他導電柱狀結構取代焊料凸塊。除了銅(Cu)之外，也可使用其他導電性材料，例如鎳(Ni)、金(Au)及鈀(palladium,Pd)等等，此外，也可使用上述材料之合金。這些導電柱狀結構形成一種稱為”銅柱凸塊(copper pillar bump)”的連接點。銅柱凸塊也可包括銅合金及其他含銅導電體，或者此種柱狀凸塊可由其他導電材料組成。此種柱狀凸塊的優點之一在於導電柱狀結構不會在迴焊(reflow)的過程中完全變形。焊料頂蓋形成一在熱迴焊(thermal reflow)過程中會熔化的球狀頂端，而導電圓柱的柱狀部分則維持其原有形狀。此種銅柱的導熱性較習知的焊料凸塊更佳，因此可增加熱量的傳輸。相較於習知的焊料凸塊，此種直徑較窄的銅柱可應用於腳距較密集的陣列，而不會產生因橋接效應所引起的短路，同時也可避免其他問題，例如凸塊高度不均。由於積體電路元件的尺寸持續縮小，端點之間的腳距以及相對應的柱狀凸塊之間的腳距也將持續降低。隨著端點之間的腳距持續降低，可以預期的是，對於使用柱狀凸塊時因熱應力(thermal stresses)所引起的各種問題將隨之增加。
本發明提供一種半導體裝置，包括：一半導體基板，其中該半導體基板具有至少一輸入/輸出端點位於其表面之上；一柱狀結構設置位於該至少一輸入/輸出端點之上，其中該柱狀結構包括：一底端部分接觸該輸入/輸出端點；一上段部分具有一第一寬度；以及一基底部分位於該底端部分之上並具有一大於該第一寬度之第二寬度。
本發明亦提供一種半導體裝置之製法，包括以下步驟：形成輸入/輸出端點於一半導體基板之一側表面上，以作為一外部連接點；沉積一鈍化層位於該輸入/輸出端點之上；圖案化該鈍化層以形成開口，以曝露該輸入/輸出端點之一部分；沉積一晶種層位於該鈍化層之上；沉積一光阻層位於該晶種層之上；顯影該光阻層以於該光阻層中形成光阻開口位於該輸入/輸出端點之上；圖案化該光阻開口之底端部分，以形成鳥喙狀圖樣位於該開口之底部，該鳥喙狀圖樣自該開口向外延伸；以及形成一導電材料於該光阻開口之中；其中該導電材料形成一柱狀結構自該晶種層向上延伸，其中該柱狀結構包括一上段部分具有一第一寬度，以及一基底部分具有大於該第一寬度之一第二寬度。
本發明另提供一種半導體裝置之製法，包括以下步驟：形成輸入/輸出端點於一半導體基板之一側表面上，以作為一外部連接點；沉積一鈍化層位於該輸入/輸出端點之上；圖案化該鈍化層以形成開口，以曝露該輸入/輸出端點之一部分；沉積一光阻層位於該鈍化層之上；顯影該光阻層以於該光阻層中形成光阻開口位於該輸入/輸出端點之上，其中該光阻開口的作用在於定義出一基底部分及一上段部分；以及形成一導電材料於該光阻開口之中；其中該導電材料形成一柱狀結構自該晶種層向上延伸，其中該柱狀結構包括一上段部分具有一第一寬度，以及一基底部分位於該鈍化層之上，其中該基底部分具有大於該第一寬度之一第二寬度。
為讓本發明之上述和其他目的、特徵、和優點能更明顯易懂，下文特舉出較佳實施例，並配合所附圖式，作詳細說明如下：
本發明所揭露之實施例係提供新穎的方法與設備，用於降低使用銅柱凸塊於封裝之積體電路中的熱應力(thermal stresses)，藉由改變銅柱的形狀，以減少或解決使用習知柱狀凸塊時，因材料中的熱應力所引起的各種問題，所有實施例將在下文中詳述。
第1圖為一剖面圖，顯示本發明所揭露之一柱狀結構61之第一實施例。需注意的是，在本實施例及整篇說明書中，剖面圖用以顯示柱狀結構之實施例；然而，這些柱狀結構為環狀。此外，整篇說明書中提及”垂直”及”矩形(rectangular)”等辭彙，係廣義地包括在半導體製程範圍內所形成之大體上垂直及大體上矩形(rectangular)的特徵。
柱狀結構61之上段部分(upper portion) 63形成於一較寬之基底部分(base portion)之上，其中該基底部分位於圖中虛線區域內並且標示為65。基底部分65之傾斜外部表面(sloped exterior surface) 67自較寬之基底部分65向上傾斜至上段圓柱狀部分(upper columnar portion) 63。基底部分65之外部表面(exterior surface) 67與上段圓柱狀部分63之垂直邊於區域64以一大於90°的角度相交。基底部分65之剖面為一梯形狀結構。一底部矩形部分66位於梯形狀基底65之下方。此底部部分66向下延伸至積體電路之端點(圖中未顯示)。
針對採用本實施例之柱狀結構形狀而完成組裝的積體電路，利用各種材料進行熱應力的相關研究，結果顯示對大多數的層狀結構而言，例如超低介電常數(extreme low-k dielectric,ELK)層、凸塊底層金屬(under bump metallization,UBM)層、底部填充(underfill,UF)、預焊料(pre-solder)及焊料凸塊，採用本實施例中如第1圖所示之柱狀結構形狀，所觀察到的熱應力較採用先前技術之習知柱狀結構形狀的熱應力更低。
在第1圖中，實施例61可以是，例如，一柱狀結構，其上段部分(upper portion) 63具有一寬度W1約為85μm。基底部分65之剖面形成一梯形。基底部分65較上段圓柱狀部分(upper columnar portion) 63略寬。在本實施例(僅用於示範而非限制)中，基底具有一延長部分，其中該延長部分在剖面圖的兩側各較其上方之圓柱狀部分(columnar portion)延長一寬度W2。在一實施例中，W2為5μm，本實施例中基底部分65之寬度為95μm。因此基底部分之寬度較上段部分之寬度大10%；且基底部分之寬度大於上段部分之寬度的程度可多於或少於10%。此外，相較於上段部分，基底部分65之高度相當小；在本實施例中，高度H1約為3μm。基底部分的外部傾斜表面(exterior sloped surface) 67自基底部分65最寬的部分向上傾斜至圓柱狀上段部分(columnar upper portion) 63，並且與圓柱狀上段部分(columnar upper portion) 63之垂直邊相交於斜角區域64，且具有一相交角度大於90°。上段部分之高度、寬度以及基底(base)之寬度可依本實施例進行相當程度的修改。例如，高度H1可為2-10μm。例如，寬度W1可為50-110μm。寬度W2可為基底寬度W1的約5%。例如，寬度W2的變化範圍可為5-11μm。
第2圖為一剖面圖，顯示形成第1圖之柱狀結構的一中間製程步驟。在第2圖中，光阻73經過沉積、曝光及顯影，並且形成一開口75於半導體基板77之上。一積體電路可形成於半導體基板77之中。端點76藉由一位於鈍化層(passivation layer) 79之中的開口而得以暴露在外，其中該端點76耦合至位於積體電路中的電路(圖中未顯示)，以形成一電性連接至電路。鈍化層(passivation layer) 79為一介電材料(dielectric)，例如聚亞醯胺(polyimide)、氮化物(nitride)、氧化物(oxide)或其他用於鈍化之材料。阻障層(barrier layer) 81沉積於基板77(在此一製程步驟中可能仍為晶圓型態，或為一獨立的晶粒)之上，且一晶種層(seed layer) 83濺鍍或沉積於阻障層之上；這些層狀構造共同形成一凸塊底層金屬(under bump metallization,UBM)層。光阻因此形成一垂直圓柱狀的開口，並且使晶種層83之上段表面的選定部分得以暴露在外。在一典型的實施例中，用以形成銅柱之晶種層通常也是銅或銅合金，因此通常會於表面上形成氧化銅(copper oxide,CuO2 )。阻障層81與晶種層83共同形成柱狀結構之凸塊底層金屬(UBM)層。凸塊底層金屬(UBM)層具有數種功能。阻障層81可提供一擴散阻障並提供一黏著層，以改善後續各層之黏著性。晶種層83用於後續的電鍍步驟並且也可當作一額外的黏著層。
第3圖為一剖面圖，顯示本發明所揭露之方法實施例經過第2圖之後續其他製程步驟的結構。在第3圖中，光阻73具有一鳥喙狀(bird beak)開口85，例如於圖中，形成於開口75之底部，且位於晶種層83之上表面，其中鳥喙狀開口形成比開口75之上段部分更寬的基底部分。當此開口於後續的電化學電鍍(electrochemical plating,ECP)製程中被銅柱所填充，將可觀察到本柱狀結構實施例中之基底部分的梯形剖面(如第1圖所示)。此外，與先前技術中的凸塊底層金屬(UBM)材料相比，受到填充銅柱之基底所覆蓋的凸塊底層金屬層材料寬度較寬，因而增加位於銅柱下方的凸塊底層金屬層材料餘留量。
在第一方法實施例中，可在一電化學預鍍(pre-ECP)步驟中利用即時原位(in-situ)的方法形成開口75的喇叭形底端部分(flared bottom portion)於光阻層(PR layer) 73中。在稱為”乾式蝕刻(dry etch)”的製程中，可進行電漿處理，例如利用微波或無線電波(radio frequency,RF)能量進行氮氣/氫氣(N2 /H2 )電漿氣體處理。對位於開口75底部而暴露在外之晶種層83的上表面進行電漿處理，可從晶種層移除氧化銅(CuO2 )，同時也將於開口75底部的角落形成一鳥喙狀(bird beak)開口。在電漿處理之後，進行一電化學電鍍(ECP)製程，以低起始沉積速率(low initial deposition rate)進行銅的沉積(例如，起始沉積速率可介於0.1-0.5 ASD之間。單位ASD定義為每單位面積內的電流量，安培/平方公寸(amperes/dm squared,A/dm2 ))。
低起始沉積速率將產生一缺口填補(gap-filling)效應，使得欲鍍的銅柱材料能夠填充於光阻開口75與銅材料所形成的鳥喙狀開口85之中，並且可藉此於基底部分形成一梯形剖面。
在另一方法實施例中，可在一電化學預鍍(pre-ECP)步驟中，利用即時原位(in-situ)的方法形成開口75的喇叭形底端部分於光阻層(PR layer) 73中，其中即時原位(in-situ)的方法係利用濕式清潔製程(wet clean process)。在濕式製程中，可使用溶液從位於開口75底部之晶種層83移除氧化銅(CuO2 )，或是利用濕式清潔劑(wet cleans)從晶種層移除氧化銅(CuO2 )。也可使用其他濕式清潔劑，例如稀釋的氫氟酸(dilute HF)、食人魚(piranha)及其他清潔劑。選用濕式化學蝕刻製程以使鳥喙狀開口區域形成於光阻層中。之後，以低起始沉積速率進行電化學電鍍(ECP)製程。熟知本技術領域者應了解，以低起始沉積速率進行電化學電鍍(ECP)製程，將可填充因濕式蝕刻製程或濕式清潔製程而形成於光阻開口75中的鳥喙狀開口(如第3圖所示之區域85)。此鳥喙狀開口將因缺口填補(gap-filling)效應而受到填補，並且可藉此形成梯形之銅柱基底部分。對於本濕式製程之實施例而言，可藉由改變用於氧化物清潔步驟的化學作用而於光阻層73中創造出如鳥喙狀圖樣，第3圖所示之區域85。進行缺口填補之電化學電鍍(ECP)製程之後，以正常的起始沉積速率進行電化學電鍍(ECP)製程，以形成銅柱的其餘部分。
在又一方法實施例中，可在光阻製程中利用光阻顯影步驟於開口75底部產生鳥喙狀開口區域85。在光阻73形成的製程中，藉由刻意散焦(defocusing)與曝光不足(underexposure)，在光阻層中可產生鳥喙狀區域85於開口之中。此方法實施例的優點在於不需要額外的遮罩(mask)步驟及額外的化學品或電漿處理步驟，因此其在實施銅柱形成製程的成本非常低。在開口75的底部形成如區域85之鳥喙狀開口之後，以低起始沉積速率(low initial deposition rate)進行缺口填補之電化學電鍍(ECP)製程，使銅柱材料能夠填充於開口75底部之鳥喙狀延伸部分之中。
第4圖為一剖面圖，經過第3圖之後續其他製程步驟的結構。利用電化學電鍍(ECP)製程使銅柱91形成於晶種層83暴露的表面之上，其中銅柱91可由下列材料所組成，包括銅及其合金，或是其他導電金屬及其合金，以及上述材料之組合。可利用頂蓋(cap)材料覆蓋於銅柱之上，頂蓋(cap)材料包括例如鎳(Ni)、鈀(palladium,Pd)、鉑(platinum,Pt)、金(Au)等等，此外，也可使用上述材料之合金，例如無電鍍鎳鈀浸金(electroless nickel,electroless palladium,immersion gold,ENEPIG)或無電鍍鎳浸金(electroless nickel,immersion gold,ENEPIG)；此層可視需要實施，且未顯示於圖中。可形成預焊料層93於銅柱91的上表面之上。此層可藉由電鍍(plating)、濺鍍(sputtering)、印刷(printing)或其他物理氣相沉積法(physical vapor deposition,PVD)或化學氣相沉積法(chemical vapor deposition,CVD)形成。接著形成焊料層95；其可藉由電化學電鍍(ECP)製程進行電鍍，例如利用預焊料層作為晶種層。也可利用其他方法形成焊料層95。焊料層95可為含鉛焊料(例如鉛(pb)或鉛/錫合金(pb/Sn))、無鉛焊料(例如錫(Sn)、錫/銀合金(Sn/Ag)、錫/銀/銅合金(Sn/Ag/Cu))或其他常被利用作為無鉛焊料的共熔(eutectic)材料。
第5圖顯示銅柱凸塊91經過第4圖之後續其他製程步驟的結構。在第4圖到第5圖的轉變中，藉由例如灰化(ashing)或其他習知的光阻剝除方法將光阻73剝除，並且選擇性地蝕刻包括晶種層(seed layer) 83及阻障層81之凸塊底層金屬層，以從鈍化層(passivation layer) 79之上移除多餘的材料。經過以上製程所完成的柱狀凸塊包括柱狀結構91、預焊料93及焊料95，柱狀凸塊將繼續進行一熱迴焊(thermal reflow)步驟，以形成帶有球狀或凸塊狀焊料頂蓋的柱狀凸塊。
第6圖為一剖面圖，顯示另一圓柱形柱狀凸塊之實施例。在第6圖中，柱狀結構105在基底部分(虛線所包圍的矩形，其標號為102)具有最大的寬度，其兩側各自有一寬度為W2的矩形延伸部分自中心部份向外延伸，且柱狀結構105的上段部分106具有垂直方向的延伸部分延伸至圓柱形柱狀凸塊105的頂端。基底部分102較頂端部分寬約10%或更多或更少，基底部分具有矩形延伸部分位於相對的兩端，且各自向外，以延伸基底部分的寬度。自基底部分102向下延伸的矩形底端部分104為填充於鈍化層(passivation layer)中開口(圖中未顯示)的柱狀結構部分，底端部分104的功能在於接觸位於其下方的端點(圖中亦未顯示)。因此，基底部分102位於鈍化層(passivation layer)、凸塊底層金屬層材料及底端部分104之上，而底端部分104位於端點之上並與端點接觸。在一非限制性的實施例中，柱狀結構寬度W1約為85μm。基底部分102兩端的延伸部分各自具有一寬度W2約為5μm，因此在本實施例中，矩形基底部分具有一寬度W3約為95μm。高度H1可為，例如3μm。如同第1圖所述，在不同的實施例中也可採用其他的高度及寬度，這些實施例僅用於示範而非加以限制。例如，高度H1可為2-10μm。例如，寬度W1可為50-110μm。寬度W2約為基底寬度W1的5%。例如，寬度W2的變化範圍可為5-11μm。
形成第6圖所示之圓柱形柱狀結構105的製程可藉由兩階段光阻製程實施。此兩階段光阻製程的實施係藉由沉積一第一光阻層，並且先圖案化將形成基底部分的較寬開口，接著圖案化一第二光阻層並於其上形成一開口，其中該開口具有一較窄的寬度，用以定義出上段部分於其上，藉此建構出完整的柱狀結構。光阻製程之後，最後藉由電化學電鍍(ECP)製程對該柱狀結構進行電鍍，以完成該柱狀結構。由於基底部分的高度H1足夠大，因此不需要”缺口填補(gap-filling)”或低起始沉積速率之電化學電鍍(ECP)步驟。電化學電鍍(ECP)製程將對基底部分102進行電鍍，並且接著形成柱狀結構105之上段部分106，如第6圖所示。
第7圖為一剖面圖，顯示本發明所揭露之又一實施例。在此實施例中，可使用具有一般梯形的柱狀結構101。由於本實施例也是基底部分較寬，因此相較於使用習知的圓柱形柱狀凸塊，可減少各不同層材料之間的熱應力(thermal stresses)。柱狀結構101具有傾斜的側邊，自底部最寬的部分沿著傾斜的側邊連續地朝著頂端部分向上延伸，且傾斜的側邊形成一連續的表面。在剖面圖中，柱狀結構101為一梯形。自柱狀結構101之基底向下延伸的矩形底端部分96為填充於鈍化層(passivation layer)中開口(圖中未顯示)的柱狀結構部分，底端部分96的功能在於接觸位於其下方的端點(圖中亦未顯示)。在一僅用於示範而非加以限制的實施例中，柱狀結構101的頂端可具有一寬度W1約為85μm，而柱狀結構101的底端可具有一寬度W3約為95μm。使基底部分較寬的其他種元件安排方式，以及具有如第7圖所示之傾斜側邊，皆可視為其他實施例。在此所揭露之任何實施例，其柱狀結構的尺寸可加以變更，並且可依照製程的尺寸等級進行等比例的調整。例如，寬度W1的變化範圍可為50-110μm。寬度W3約為基底寬度W1的110-130%，因此，例如，寬度W3的變化範圍可為55-130μm。
第7圖之柱狀結構101實施例可於光阻製程中利用微影散焦(photolithographic defocus)及曝光能量變化而形成。其中柱狀結構101的傾斜側邊自接近底端的最寬部分向上延伸至頂端部分。此傾斜側邊係藉由在光阻製程中利用刻意地散焦及改變曝光能量而形成。在進行曝光及顯影步驟之後，利用如上述之電化學電鍍(ECP)製程對柱狀結構進行電鍍，隨後柱狀結構的形狀依照光阻層中的開口形狀而固定其形狀。
第6圖及第7圖實施例可在不需要使用電鍍(electroplating)的條件下形成，可使用，例如，柱狀無電鍍(electroless plating)及無晶種沉積(seedless deposition)等方法形成。由於這些實施例並不包括如第1圖實施例所示的鳥喙狀圖樣，因此不需要藉助低起始沉積速率產生的缺口填補(gap-filling)效應。
為了將本發明各個實施例所揭露之柱狀結構與使用習知的圓柱形柱狀結構相比較，第8圖以表格形式列出歸一化應力(normalized stress)的計算結果。鑑別許多柱狀結構形成於測試裝置上的歸一化應力(normalized stress)，可針對裝置進行分類和評價。超低介電常數(extreme low-k,ELK)材料的脫層(delamination)被確認為最常發生，因此也是最具象徵性的失效模式。其他失效模式也已確認，包括發生於凸塊底層金屬(UBM)層、鈍化層(passivation)、焊料凸塊(表中以BUMP表示)層、預焊料層及底部填充(underfill,UF)層的脫層。用於評估的溫度條件也顯示於表中，若非在25℃的熱迴焊(thermal reflow)之後，就是在最高溫(125℃)或最低溫(55℃)的熱循環測試(thermal cycle test)之後進行評估。
在表格登錄的準備過程中，每一個的應力項目(catergory)數值皆須進行歸一化(normalized)，因此將習知的柱狀凸塊之應力值設定為1.00。表中的任何一個應力項目的數值小於1.00，代表該項目相較於習知技術已得到改善。
在第8圖之表格的第一列中，顯示出最重要的失效模式，超低介電常數(ELK)材料的脫層(delamination)，可用以比較包括習知技術與本發明之各實施例所使用的各種柱狀結構形狀。第1圖所顯示之具有梯形基底的實施例，其超低介電常數(ELK)材料失效模式的數值為0.91。與習知技術相較已得到改善。同樣地，第6圖所顯示之具有矩形基底的柱狀結構，其超低介電常數(ELK)材料脫層失效模式與習知技術相較亦得到改善。表格的最後一欄為第7圖所顯示之具有傾斜側邊與寬基底的柱狀結構，其超低介電常數(ELK)材料脫層失效比率與習知技術相較亦得到改善。
本發明所揭露之實施例在其他應力項目方面，大多數皆較習知的柱狀結構有所改善。在某些受到關注的應力點方面，本發明所揭露之實施例的數值可能超過1.00，然而在最弱的失效點(ELK脫層及UBM脫層)方面，本發明所揭露之實施例較習知的柱狀凸塊獲得顯著的改善。
本發明所揭露之每一實施例皆具有一側視剖面圖，此側視剖面圖並非垂直地自圓柱形柱狀結構的底部向上延伸至圓柱形柱狀結構的頂部。相對地，每一實施例之側視剖面圖具有下列特點之一，包括具有一較頂部更寬的底端部分，具有至少一部分傾斜的側邊，或是在位於基底部分的兩側形成一水平的延伸部分自保持垂直的部分向外延伸。寬度較寬的基底部分位於凸塊底層金屬層(UBM layer)之上，而且由於在每一實施例中，基底部分的寬度較習知技術的柱狀結構之基底部分更寬，因此位於柱狀結構下方的凸塊底層金屬層層經過製程步驟之後，其面積仍然大於習知技術的柱狀結構之凸塊底層金屬層，因而得以改善熱性能(thermal performance)。採用本發明所揭露之實施例的柱狀結構，能夠有效減輕發生在習知技術之柱狀結構中的熱應力效應(thermal stress effect)。
採用本發明所揭露之實施例的柱狀結構，能夠降低發生在已組裝之積體電路中不同層狀結構之間的熱應力。採用已知的白凸塊(white bump)測試，實驗結果顯示採用這些實施例所揭露之柱狀結構形狀的整列銅柱凸塊，並未於凸塊中偵測到失效點；然而，即使形成於相同的測試晶圓上並且以相同的測試條件進行測試，採用習知技術所之柱狀結構形狀的整列銅柱凸塊則存在許多熱應力失效點。
寬度較寬的基底部分也提供一寬度較寬的凸塊底層金屬層，因而得以進一步降低熱應力效應。模擬應力結果顯示，採用本發明所揭露之實施例的柱狀結構，能夠降低發生在已組裝之積體電路中超低介電常數(ELK)材料層、鈍化層(passivation)、凸塊底層金屬(UBM)層、凸塊層及底部填充(underfill,UF)層等不同層狀結構的熱應力。
在一實施例中，一裝置包括一半導體基板，其中該半導體基板具有至少一輸入/輸出端點位於其表面之上；一柱狀結構設置位於該至少一輸入/輸出端點之上，其中該柱狀結構包括：一底端部分接觸該輸入/輸出端點；一上段部分具有一第一寬度；以及一基底部分位於該底端部分之上並具有大於該第一寬度之一第二寬度。
在另一實施例中，一方法包括形成輸入/輸出端點於一半導體基板之一側表面上，以作為一外部連接點；沉積一鈍化層位於該輸入/輸出端點之上；圖案化該鈍化層以形成開口，以曝露該輸入/輸出端點之一部分；沉積一晶種層位於該鈍化層之上；沉積一光阻層位於該晶種層之上；顯影該光阻層以於該光阻層中形成光阻開口位於該輸入/輸出端點之上；圖案化該光阻開口之底端部分，以形成鳥喙狀圖樣位於該開口之底部，該鳥喙狀圖樣自該開口向外延伸；以及鍍上一層導電材料以填充該光阻開口；其中該導電材料形成一柱狀結構自該晶種層向上延伸，其中該柱狀結構包括一上段部分具有一第一寬度，以及一基底部分具有大於該第一寬度之一第二寬度。
在另一實施例中，一方法包括形成輸入/輸出端點於一半導體基板之一側表面上，以作為一外部連接點；沉積一鈍化層位於該輸入/輸出端點之上；圖案化該鈍化層以形成開口，以曝露該輸入/輸出端點之一部分；沉積一晶種層位於該鈍化層之上；沉積一光阻層位於該晶種層之上；顯影該光阻層以於該光阻層中形成光阻開口位於該輸入/輸出端點之上，其中該光阻開口定義出一基底部分及一上段部分；以及鍍上一層導電材料以填充該光阻開口；其中該導電材料形成一柱狀結構自該晶種層向上延伸，其中該柱狀結構包括一上段部分具有一第一寬度，以及一基底部分位於該鈍化層之上，其中該基底部分具有大於該第一寬度之一第二寬度。
雖然本發明已以數個較佳實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作任意之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
61．．．柱狀結構
63．．．上段圓柱狀部分
64．．．斜角區域
65．．．基底部分
66．．．底部矩形部分
67．．．外部傾斜表面
H1．．．基底部分高度
W1．．．上段部分寬度
W2．．．基底部分延長寬度
73．．．光阻層
75．．．開口
76．．．端點
77．．．半導體基板
79．．．鈍化層
81．．．阻障層
83．．．晶種層
85．．．鳥喙狀開口
91．．．銅柱
93．．．預焊料層
95．．．焊料層
96．．．矩形底端部分
101．．．柱狀結構
102．．．基底部分
104．．．矩形底端部分
105．．．柱狀結構
106．．．上段部分
H1．．．基底部分高度
W1．．．上段部分寬度
W2．．．基底部分延長寬度
W3．．．基底部分寬度
W1．．．柱狀結構頂端寬度
W3．．．柱狀結構底端寬度
第1圖為一剖面圖，用以說明本發明一實施例之柱狀凸塊結構。
第2圖為一剖面圖，用以說明本發明形成圓柱狀凸塊之實施例的中間製程結構。
第3圖為一剖面圖，用以說明本發明第2圖進行後續製程之結構。
第4圖為一剖面圖，用以說明本發明第3圖進行後續製程之結構。
第5圖為一剖面圖，用以說明本發明第4圖進行後續製程之結構。
第6圖為一剖面圖，用以說明本發明形成圓柱狀凸塊之另一實施例的中間製程結構。
第7圖為一剖面圖，用以說明本發明形成圓柱狀凸塊之又一實施例的中間製程結構。
第8圖為一表格，用以比較習知柱狀凸塊與本發明柱狀凸塊之失效模式評估(failure mode evaluation)。
61．．．柱狀結構
63．．．上段圓柱狀部分
64．．．斜角區域
65．．．基底部分
66．．．底部矩形部分
67．．．外部傾斜表面
H1．．．基底部分高度
W1．．．上段部分寬度
W2．．．基底部分延伸寬度

Claims (10)

  1. 一種半導體裝置，包括：一半導體基板，其中該半導體基板具有至少一輸入/輸出端點位於其表面之上，且該輸入/輸出端點具有一端點寬度；一柱狀結構設置位於該至少一輸入/輸出端點之上，其中該柱狀結構包括：一底端部分接觸該輸入/輸出端點，且具有一底端寬度；一上段部分具有一第一寬度；以及一基底部分位於該底端部分之上並具有一大於該第一寬度之第二寬度，且該端點寬度大於該底端寬度且小於該第二寬度。
  2. 如申請專利範圍第1項所述之半導體裝置，其中該基底部分具有一形狀，從側視剖面圖來看，為一梯形。
  3. 如申請專利範圍第1項所述之半導體裝置，尚包括：一凸塊底層金屬層(under bump metallization layer)位於該柱狀結構之下，其中該凸塊底層金屬層包括一晶種層(seed layer)及一阻障層(barrier layer)。
  4. 如申請專利範圍第1項所述之半導體裝置，其中該柱狀結構包括銅。
  5. 如申請專利範圍第1項所述之半導體裝置，其中該柱狀結構尚包括該上段部分具有垂直的側邊並且設置於該基底部分之上，該基底部分具有含有非垂直部分的側邊，其中該含有非垂直部分的側邊尚包括自該基底部 分的底端延伸，並且與該上段部分之該垂直側邊以一大於90°的角度相交。
  6. 如申請專利範圍第1項所述之半導體裝置，其中該基底部分尚包括矩形延伸部分自該基底部分的中心部份向外延伸，且該上段部分具有垂直的側邊。
  7. 一種半導體裝置之製法，包括以下步驟：形成輸入/輸出端點於一半導體基板之一側表面上，以作為一外部連接點；沉積一鈍化層位於該輸入/輸出端點之上；圖案化該鈍化層以形成開口，以曝露該輸入/輸出端點之一部分；沉積一晶種層位於該鈍化層之上；沉積一光阻層位於該晶種層之上；顯影該光阻層以於該光阻層中形成光阻開口位於該輸入/輸出端點之上；圖案化該光阻開口之底端部分，以形成鳥喙狀圖樣位於該開口之底部，該鳥喙狀圖樣自該開口向外延伸；以及形成一導電材料於該光阻開口之中；其中該導電材料形成一柱狀結構自該晶種層向上延伸，其中該柱狀結構包括一上段部分具有一第一寬度，以及一基底部分具有大於該第一寬度之一第二寬度。
  8. 如申請專利範圍第7項所述之半導體裝置之製法，其中形成該導電材料包括以一低起始沉積速率進行電鍍，藉以將該導電材料填充於該鳥喙狀開口中。
  9. 如申請專利範圍第7項所述之半導體裝置之製法，其中圖案化該光阻之底端部分包括於顯影該光阻時實施一散焦(defocus)製程。
  10. 一種半導體裝置之製法，包括以下步驟：形成輸入/輸出端點於一半導體基板之一側表面上，以作為一外部連接點，其中該輸入/輸出端點具有一端點寬度；沉積一鈍化層位於該輸入/輸出端點之上；圖案化該鈍化層以形成開口，以曝露該輸入/輸出端點之一部分；沉積一光阻層位於該鈍化層之上；顯影該光阻層以於該光阻層中形成光阻開口位於該輸入/輸出端點之上，其中該光阻開口的作用在於定義出一基底部分及一上段部分；以及形成一導電材料於該光阻開口之中；其中該導電材料形成一柱狀結構自一晶種層向上延伸，其中該柱狀結構包括一上段部分具有一第一寬度，一底端部分具有一底端寬度，以及一基底部分位於該鈍化層之上，其中該基底部分具有大於該第一寬度之一第二寬度，且其中該端點寬度大於該底端寬度且小於該第二寬度。
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US20140363966A1 (en) 2014-12-11
US9449931B2 (en) 2016-09-20
US8823166B2 (en) 2014-09-02

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