TWI423493B - 用於薄膜電晶體之ｎ型半導體材料、製造薄膜半導體裝置之方法、電子裝置及積體電路 - Google Patents
用於薄膜電晶體之ｎ型半導體材料、製造薄膜半導體裝置之方法、電子裝置及積體電路 Download PDFInfo
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- TWI423493B TWI423493B TW094145190A TW94145190A TWI423493B TW I423493 B TWI423493 B TW I423493B TW 094145190 A TW094145190 A TW 094145190A TW 94145190 A TW94145190 A TW 94145190A TW I423493 B TWI423493 B TW I423493B
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- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 229940117803 phenethylamine Drugs 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920000636 poly(norbornene) polymer Polymers 0.000 description 1
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001470 polyketone Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001955 polyphenylene ether Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000007363 ring formation reaction Methods 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003335 steric effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
- C09B5/00—Dyes with an anthracene nucleus condensed with one or more heterocyclic rings with or without carbocyclic rings
- C09B5/62—Cyclic imides or amidines of peri-dicarboxylic acids of the anthracene, benzanthrene, or perylene series
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/021,739 US7198977B2 (en) | 2004-12-21 | 2004-12-21 | N,N′-di(phenylalky)-substituted perylene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200629616A TW200629616A (en) | 2006-08-16 |
| TWI423493B true TWI423493B (zh) | 2014-01-11 |
Family
ID=36596468
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094145190A TWI423493B (zh) | 2004-12-21 | 2005-12-20 | 用於薄膜電晶體之ｎ型半導體材料、製造薄膜半導體裝置之方法、電子裝置及積體電路 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7198977B2 (enExample) |
| EP (1) | EP1829133A2 (enExample) |
| JP (1) | JP2008524869A (enExample) |
| KR (1) | KR20070095907A (enExample) |
| CN (1) | CN101084590B (enExample) |
| TW (1) | TWI423493B (enExample) |
| WO (1) | WO2006068833A2 (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1980791B (zh) * | 2004-01-26 | 2012-08-22 | 西北大学 | 苝n-型半导体和相关器件 |
| US8138075B1 (en) | 2006-02-06 | 2012-03-20 | Eberlein Dietmar C | Systems and methods for the manufacture of flat panel devices |
| US7569693B2 (en) * | 2006-06-12 | 2009-08-04 | Northwestern University | Naphthalene-based semiconductor materials and methods of preparing and use thereof |
| US20080087878A1 (en) * | 2006-10-17 | 2008-04-17 | Basf Akiengesellschaft | Use of perylene diimide derivatives as air-stable n-channel organic semiconductors |
| US20080054258A1 (en) * | 2006-08-11 | 2008-03-06 | Basf Aktiengesellschaft | Use of perylene diimide derivatives as air-stable n-channel organic semiconductors |
| EP2089398A2 (en) * | 2006-10-25 | 2009-08-19 | Polyera Corporation | Organic semiconductor materials and methods of preparing and use thereof |
| US7902363B2 (en) | 2006-11-17 | 2011-03-08 | Polyera Corporation | Diimide-based semiconductor materials and methods of preparing and using the same |
| WO2008085942A2 (en) * | 2007-01-08 | 2008-07-17 | Polyera Corporation | Methods for preparing arene-bis(dicarboximide)-based semiconducting materials and related intermediates for preparing same |
| WO2008091670A2 (en) * | 2007-01-24 | 2008-07-31 | Polyera Corporation | Organic semiconductor materials and precursors thereof |
| TWI427098B (zh) * | 2008-02-05 | 2014-02-21 | Basf Se | 由芮－（π－受體）共聚物製備之半導體材料 |
| US7649199B2 (en) * | 2008-04-11 | 2010-01-19 | Eastman Kodak Company | N-type semiconductor materials in thin film transistors and electronic devices |
| KR101367129B1 (ko) * | 2008-07-08 | 2014-02-25 | 삼성전자주식회사 | 씬 필름 트랜지스터 및 그 제조 방법 |
| WO2010150792A1 (ja) * | 2009-06-23 | 2010-12-29 | 住友化学株式会社 | 有機エレクトロルミネッセンス素子 |
| US9133193B2 (en) | 2009-10-29 | 2015-09-15 | Dainichiseika Color & Chemicals Mfg. Co., Ltd. | Organic semiconductor material, organic semiconductor thin film, and organic thin film transistor |
| DE102010009903A1 (de) | 2010-03-02 | 2011-09-08 | Merck Patent Gmbh | Verbindungen für elektronische Vorrichtungen |
| US8283469B2 (en) * | 2010-03-24 | 2012-10-09 | National Tsing Hua University | Perylene diimide derivative and organic semiconductor element using the same material |
| CN102234366B (zh) * | 2010-04-29 | 2013-01-23 | 海洋王照明科技股份有限公司 | 含噻吩单元苝四羧酸二酰亚胺共聚物及其制备方法和应用 |
| US20110269966A1 (en) | 2010-04-30 | 2011-11-03 | Deepak Shukla | Semiconducting articles |
| US8530270B2 (en) | 2010-04-30 | 2013-09-10 | Eastman Kodak Company | Methods of preparing semiconductive compositions and devices |
| US8411489B2 (en) | 2010-04-30 | 2013-04-02 | Eastman Kodak Company | Semiconducting devices and methods of preparing |
| US8314265B2 (en) | 2010-04-30 | 2012-11-20 | Eastman Kodak Company | Aromatic amic acids or amic esters and compositions |
| US8404892B2 (en) | 2010-05-27 | 2013-03-26 | Eastman Kodak Company | Aromatic amic acid salts and compositions |
| CN103081149B (zh) | 2010-08-29 | 2016-07-06 | 国立大学法人信州大学 | 有机半导体微粒材料、有机半导体薄膜、有机半导体膜形成用分散液、有机半导体薄膜的制造方法及有机薄膜晶体管 |
| WO2014100961A1 (en) * | 2012-12-24 | 2014-07-03 | Rhodia Operations | Use of compounds of the perylene type as acceptors in photovoltaics |
| KR102576999B1 (ko) * | 2016-07-05 | 2023-09-12 | 삼성디스플레이 주식회사 | 액정표시장치 |
| JP7464397B2 (ja) * | 2020-01-31 | 2024-04-09 | 保土谷化学工業株式会社 | ペリレン誘導体化合物、該化合物を用いた有機半導体用組成物、該有機半導体用組成物を用いた有機薄膜トランジスタ |
| CN118480043A (zh) * | 2024-07-15 | 2024-08-13 | 潍坊科技学院 | 一种杂环纳米材料混合物、制备方法及应用 |
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| US4156757A (en) * | 1976-08-13 | 1979-05-29 | Basf Aktiengesellschaft | Electrically conductive perylene derivatives |
| US20020164835A1 (en) * | 2001-05-04 | 2002-11-07 | Dimitrakopoulos Christos Dimitrios | Organic n-channel semiconductor device of N,N' 3,4,9,10 perylene tetracarboxylic diimide |
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|---|---|---|---|---|
| US4746741A (en) * | 1986-06-19 | 1988-05-24 | Eastman Kodak Company | N,N'-bis[2-(3-methylphenyl)ethyl]-perylene-3,4:9,10-bis (dicarboximide) compound use thereof in multi-active photoconductive insulating elements exhibiting far red sensitivity |
| US4719163A (en) * | 1986-06-19 | 1988-01-12 | Eastman Kodak Company | Multi-active photoconductive insulating elements exhibiting far red sensitivity |
| FR2664430B1 (fr) | 1990-07-04 | 1992-09-18 | Centre Nat Rech Scient | Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques. |
| US5981970A (en) | 1997-03-25 | 1999-11-09 | International Business Machines Corporation | Thin-film field-effect transistor with organic semiconductor requiring low operating voltages |
| DE69839010T2 (de) * | 1997-04-29 | 2009-01-02 | Ciba Holding Inc. | Beschreibbare und löschbare optische aufzeichnungsmedien mit hoher dichte |
| US6387727B1 (en) | 1999-03-29 | 2002-05-14 | Agere Systems Guardian Corp. | Device comprising n-channel semiconductor material |
| US6635507B1 (en) | 1999-07-14 | 2003-10-21 | Hughes Electronics Corporation | Monolithic bypass-diode and solar-cell string assembly |
| DE10024993A1 (de) * | 2000-05-22 | 2001-11-29 | Univ Bremen | Elektrisches Bauelement und Verfahren zu seiner Herstellung |
| GB0028867D0 (en) * | 2000-11-28 | 2001-01-10 | Avecia Ltd | Field effect translators,methods for the manufacture thereof and materials therefor |
| JP3426211B2 (ja) * | 2000-12-19 | 2003-07-14 | 科学技術振興事業団 | 高速応答光電流増倍装置 |
| JP2002289878A (ja) * | 2001-03-26 | 2002-10-04 | Pioneer Electronic Corp | 有機半導体ダイオード |
| JP2003041145A (ja) * | 2001-07-27 | 2003-02-13 | Yokohama Tlo Co Ltd | 黒色ペリレン系顔料およびその製造方法 |
| DE10218618A1 (de) * | 2002-04-25 | 2003-11-06 | Basf Ag | Verfahren zur Herstellung von Perylen-3,4:9,10-tetracarbonsäuredimiden und Perylen-3,4:9,10-tetracarbonsäuredianhydrid sowie von Naphthalin-1,8-dicarbonsäureimiden |
| US7090929B2 (en) * | 2002-07-30 | 2006-08-15 | E.I. Du Pont De Nemours And Company | Metallic complexes covalently bound to conjugated polymers and electronic devices containing such compositions |
| WO2004013922A2 (en) * | 2002-08-06 | 2004-02-12 | Avecia Limited | Organic electronic devices |
| JP4340428B2 (ja) * | 2002-09-20 | 2009-10-07 | 国立大学法人京都大学 | 半導体装置およびその製造方法 |
| JP2004247716A (ja) * | 2003-01-23 | 2004-09-02 | Mitsubishi Chemicals Corp | 積層体の製造方法 |
| CN1980791B (zh) | 2004-01-26 | 2012-08-22 | 西北大学 | 苝n-型半导体和相关器件 |
| US7326956B2 (en) * | 2004-12-17 | 2008-02-05 | Eastman Kodak Company | Fluorine-containing N,N′-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors |
-
2004
- 2004-12-21 US US11/021,739 patent/US7198977B2/en not_active Expired - Lifetime
-
2005
- 2005-12-06 KR KR1020077013932A patent/KR20070095907A/ko not_active Withdrawn
- 2005-12-06 CN CN2005800441323A patent/CN101084590B/zh not_active Expired - Fee Related
- 2005-12-06 JP JP2007548262A patent/JP2008524869A/ja active Pending
- 2005-12-06 EP EP05853225A patent/EP1829133A2/en not_active Withdrawn
- 2005-12-06 WO PCT/US2005/044241 patent/WO2006068833A2/en not_active Ceased
- 2005-12-20 TW TW094145190A patent/TWI423493B/zh not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4156757A (en) * | 1976-08-13 | 1979-05-29 | Basf Aktiengesellschaft | Electrically conductive perylene derivatives |
| US20020164835A1 (en) * | 2001-05-04 | 2002-11-07 | Dimitrakopoulos Christos Dimitrios | Organic n-channel semiconductor device of N,N' 3,4,9,10 perylene tetracarboxylic diimide |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008524869A (ja) | 2008-07-10 |
| WO2006068833A2 (en) | 2006-06-29 |
| US20060134823A1 (en) | 2006-06-22 |
| EP1829133A2 (en) | 2007-09-05 |
| CN101084590B (zh) | 2012-05-30 |
| KR20070095907A (ko) | 2007-10-01 |
| TW200629616A (en) | 2006-08-16 |
| CN101084590A (zh) | 2007-12-05 |
| US7198977B2 (en) | 2007-04-03 |
| WO2006068833A3 (en) | 2007-01-11 |
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