JP2008524869A - 薄膜トランジスタのためのｎ型半導体材料 - Google Patents

薄膜トランジスタのためのｎ型半導体材料 Download PDF

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JP2008524869A
JP2008524869A JP2007548262A JP2007548262A JP2008524869A JP 2008524869 A JP2008524869 A JP 2008524869A JP 2007548262 A JP2007548262 A JP 2007548262A JP 2007548262 A JP2007548262 A JP 2007548262A JP 2008524869 A JP2008524869 A JP 2008524869A
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thin film
article
semiconductor material
organic
organic semiconductor
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JP2008524869A5 (enExample
Inventor
シュクラ，ディーパック
キャロル フリーマン，ダイアン
フォレスター ネルソン，シェルビー
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イーストマン コダック カンパニー
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Publication of JP2008524869A publication Critical patent/JP2008524869A/ja
Publication of JP2008524869A5 publication Critical patent/JP2008524869A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B5/00—Dyes with an anthracene nucleus condensed with one or more heterocyclic rings with or without carbocyclic rings
    • C09B5/62—Cyclic imides or amidines of peri-dicarboxylic acids of the anthracene, benzanthrene, or perylene series
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Thin Film Transistor (AREA)
JP2007548262A 2004-12-21 2005-12-06 薄膜トランジスタのためのｎ型半導体材料 Pending JP2008524869A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/021,739 US7198977B2 (en) 2004-12-21 2004-12-21 N,N′-di(phenylalky)-substituted perylene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
PCT/US2005/044241 WO2006068833A2 (en) 2004-12-21 2005-12-06 N-type semiconductor materials for thin film transistors

Publications (2)

Publication Number Publication Date
JP2008524869A true JP2008524869A (ja) 2008-07-10
JP2008524869A5 JP2008524869A5 (enExample) 2008-12-11

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Family Applications (1)

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JP2007548262A Pending JP2008524869A (ja) 2004-12-21 2005-12-06 薄膜トランジスタのためのｎ型半導体材料

Country Status (7)

Country Link
US (1) US7198977B2 (enExample)
EP (1) EP1829133A2 (enExample)
JP (1) JP2008524869A (enExample)
KR (1) KR20070095907A (enExample)
CN (1) CN101084590B (enExample)
TW (1) TWI423493B (enExample)
WO (1) WO2006068833A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
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WO2011052721A1 (ja) 2009-10-29 2011-05-05 大日精化工業株式会社 有機半導体材料、有機半導体薄膜および有機薄膜トランジスタ
JP2011514913A (ja) * 2008-02-05 2011-05-12 ビーエーエスエフ ソシエタス・ヨーロピア リレン−（π−受容体）コポリマーから製造される半導体材料
WO2012029544A1 (ja) 2010-08-29 2012-03-08 国立大学法人信州大学 有機半導体微粒子材料、有機半導体薄膜、有機半導体膜形成用分散液、有機半導体薄膜の製造方法および有機薄膜トランジスタ

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KR101148868B1 (ko) * 2004-01-26 2012-05-29 노오쓰웨스턴 유니버시티 페릴렌 ｎ-형 반도체 및 관련된 소자
US8138075B1 (en) 2006-02-06 2012-03-20 Eberlein Dietmar C Systems and methods for the manufacture of flat panel devices
US7569693B2 (en) * 2006-06-12 2009-08-04 Northwestern University Naphthalene-based semiconductor materials and methods of preparing and use thereof
US20080054258A1 (en) * 2006-08-11 2008-03-06 Basf Aktiengesellschaft Use of perylene diimide derivatives as air-stable n-channel organic semiconductors
US20080087878A1 (en) * 2006-10-17 2008-04-17 Basf Akiengesellschaft Use of perylene diimide derivatives as air-stable n-channel organic semiconductors
WO2008051552A2 (en) * 2006-10-25 2008-05-02 Northwestern University Organic semiconductor materials and methods of preparing and use thereof
JP5380296B2 (ja) 2006-11-17 2014-01-08 ポリエラ コーポレイション ジイミド系半導体材料ならびにジイミド系半導体材料を調製および使用する方法
JP2010515684A (ja) * 2007-01-08 2010-05-13 ポリエラ コーポレイション アレーン−ビス（ジカルボキシイミド）系半導体材料、およびそれを調製するための関連する中間体を調製する方法
US8022214B2 (en) * 2007-01-24 2011-09-20 Polyera Corporation Organic semiconductor materials and precursors thereof
US7649199B2 (en) * 2008-04-11 2010-01-19 Eastman Kodak Company N-type semiconductor materials in thin film transistors and electronic devices
KR101367129B1 (ko) 2008-07-08 2014-02-25 삼성전자주식회사 씬 필름 트랜지스터 및 그 제조 방법
EP2448033A4 (en) * 2009-06-23 2014-07-23 Sumitomo Chemical Co ORGANIC ELECTROLUMINESCENCE ELEMENT
DE102010009903A1 (de) * 2010-03-02 2011-09-08 Merck Patent Gmbh Verbindungen für elektronische Vorrichtungen
US8283469B2 (en) * 2010-03-24 2012-10-09 National Tsing Hua University Perylene diimide derivative and organic semiconductor element using the same material
CN102234366B (zh) * 2010-04-29 2013-01-23 海洋王照明科技股份有限公司 含噻吩单元苝四羧酸二酰亚胺共聚物及其制备方法和应用
US20110269966A1 (en) 2010-04-30 2011-11-03 Deepak Shukla Semiconducting articles
US8411489B2 (en) 2010-04-30 2013-04-02 Eastman Kodak Company Semiconducting devices and methods of preparing
US8530270B2 (en) 2010-04-30 2013-09-10 Eastman Kodak Company Methods of preparing semiconductive compositions and devices
US8314265B2 (en) 2010-04-30 2012-11-20 Eastman Kodak Company Aromatic amic acids or amic esters and compositions
US8404892B2 (en) 2010-05-27 2013-03-26 Eastman Kodak Company Aromatic amic acid salts and compositions
WO2014100961A1 (en) * 2012-12-24 2014-07-03 Rhodia Operations Use of compounds of the perylene type as acceptors in photovoltaics
KR102576999B1 (ko) * 2016-07-05 2023-09-12 삼성디스플레이 주식회사 액정표시장치
JP7464397B2 (ja) * 2020-01-31 2024-04-09 保土谷化学工業株式会社 ペリレン誘導体化合物、該化合物を用いた有機半導体用組成物、該有機半導体用組成物を用いた有機薄膜トランジスタ
CN118480043A (zh) * 2024-07-15 2024-08-13 潍坊科技学院 一种杂环纳米材料混合物、制备方法及应用

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JPS636561A (ja) * 1986-06-19 1988-01-12 イ−ストマン　コダック　カンパニ− 赤外線に感度を示す多一活性光導電性絶縁要素
JP2002501497A (ja) * 1997-04-29 2002-01-15 チバ スペシャルティ ケミカルズ ホールディング インコーポレーテッド 書き込み及び消去可能な高密度光学記憶媒体
WO2004013922A2 (en) * 2002-08-06 2004-02-12 Avecia Limited Organic electronic devices
JP2004111870A (ja) * 2002-09-20 2004-04-08 Kenji Ishida 半導体装置およびその製造方法
JP2004525501A (ja) * 2000-11-28 2004-08-19 アベシア・リミテッド 電界効果トランジスタならびにそれらを製造するための材料および方法
JP2004247716A (ja) * 2003-01-23 2004-09-02 Mitsubishi Chemicals Corp 積層体の製造方法

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011514913A (ja) * 2008-02-05 2011-05-12 ビーエーエスエフ ソシエタス・ヨーロピア リレン−（π−受容体）コポリマーから製造される半導体材料
WO2011052721A1 (ja) 2009-10-29 2011-05-05 大日精化工業株式会社 有機半導体材料、有機半導体薄膜および有機薄膜トランジスタ
US9133193B2 (en) 2009-10-29 2015-09-15 Dainichiseika Color & Chemicals Mfg. Co., Ltd. Organic semiconductor material, organic semiconductor thin film, and organic thin film transistor
WO2012029544A1 (ja) 2010-08-29 2012-03-08 国立大学法人信州大学 有機半導体微粒子材料、有機半導体薄膜、有機半導体膜形成用分散液、有機半導体薄膜の製造方法および有機薄膜トランジスタ
US9518224B2 (en) 2010-08-29 2016-12-13 Shinshu University Organic semiconductor particulate material, organic semiconductor thin-film, dispersion liquid for forming organic semiconductor film, method for producing organic semiconductor thin-film, and organic thin-film transistor

Also Published As

Publication number Publication date
WO2006068833A2 (en) 2006-06-29
CN101084590B (zh) 2012-05-30
KR20070095907A (ko) 2007-10-01
US7198977B2 (en) 2007-04-03
US20060134823A1 (en) 2006-06-22
TW200629616A (en) 2006-08-16
CN101084590A (zh) 2007-12-05
TWI423493B (zh) 2014-01-11
WO2006068833A3 (en) 2007-01-11
EP1829133A2 (en) 2007-09-05

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