CN101084590B - 用于薄膜晶体管的n型半导体材料 - Google Patents

用于薄膜晶体管的n型半导体材料 Download PDF

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Publication number
CN101084590B
CN101084590B CN2005800441323A CN200580044132A CN101084590B CN 101084590 B CN101084590 B CN 101084590B CN 2005800441323 A CN2005800441323 A CN 2005800441323A CN 200580044132 A CN200580044132 A CN 200580044132A CN 101084590 B CN101084590 B CN 101084590B
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China
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perylene
group
bis
thin film
organic
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Expired - Fee Related
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CN2005800441323A
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English (en)
Chinese (zh)
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CN101084590A (zh
Inventor
D·舒克拉
D·C·弗里曼
S·F·纳尔逊
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Eastman Kodak Co
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Eastman Kodak Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B5/00—Dyes with an anthracene nucleus condensed with one or more heterocyclic rings with or without carbocyclic rings
    • C09B5/62—Cyclic imides or amidines of peri-dicarboxylic acids of the anthracene, benzanthrene, or perylene series
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Thin Film Transistor (AREA)
CN2005800441323A 2004-12-21 2005-12-06 用于薄膜晶体管的n型半导体材料 Expired - Fee Related CN101084590B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/021,739 2004-12-21
US11/021,739 US7198977B2 (en) 2004-12-21 2004-12-21 N,N′-di(phenylalky)-substituted perylene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
PCT/US2005/044241 WO2006068833A2 (en) 2004-12-21 2005-12-06 N-type semiconductor materials for thin film transistors

Publications (2)

Publication Number Publication Date
CN101084590A CN101084590A (zh) 2007-12-05
CN101084590B true CN101084590B (zh) 2012-05-30

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CN2005800441323A Expired - Fee Related CN101084590B (zh) 2004-12-21 2005-12-06 用于薄膜晶体管的n型半导体材料

Country Status (7)

Country Link
US (1) US7198977B2 (enExample)
EP (1) EP1829133A2 (enExample)
JP (1) JP2008524869A (enExample)
KR (1) KR20070095907A (enExample)
CN (1) CN101084590B (enExample)
TW (1) TWI423493B (enExample)
WO (1) WO2006068833A2 (enExample)

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US20080087878A1 (en) * 2006-10-17 2008-04-17 Basf Akiengesellschaft Use of perylene diimide derivatives as air-stable n-channel organic semiconductors
US20080054258A1 (en) * 2006-08-11 2008-03-06 Basf Aktiengesellschaft Use of perylene diimide derivatives as air-stable n-channel organic semiconductors
EP2089398A2 (en) * 2006-10-25 2009-08-19 Polyera Corporation Organic semiconductor materials and methods of preparing and use thereof
US7902363B2 (en) 2006-11-17 2011-03-08 Polyera Corporation Diimide-based semiconductor materials and methods of preparing and using the same
WO2008085942A2 (en) * 2007-01-08 2008-07-17 Polyera Corporation Methods for preparing arene-bis(dicarboximide)-based semiconducting materials and related intermediates for preparing same
WO2008091670A2 (en) * 2007-01-24 2008-07-31 Polyera Corporation Organic semiconductor materials and precursors thereof
TWI427098B (zh) * 2008-02-05 2014-02-21 Basf Se 由芮－（π－受體）共聚物製備之半導體材料
US7649199B2 (en) * 2008-04-11 2010-01-19 Eastman Kodak Company N-type semiconductor materials in thin film transistors and electronic devices
KR101367129B1 (ko) * 2008-07-08 2014-02-25 삼성전자주식회사 씬 필름 트랜지스터 및 그 제조 방법
WO2010150792A1 (ja) * 2009-06-23 2010-12-29 住友化学株式会社 有機エレクトロルミネッセンス素子
US9133193B2 (en) 2009-10-29 2015-09-15 Dainichiseika Color & Chemicals Mfg. Co., Ltd. Organic semiconductor material, organic semiconductor thin film, and organic thin film transistor
DE102010009903A1 (de) 2010-03-02 2011-09-08 Merck Patent Gmbh Verbindungen für elektronische Vorrichtungen
US8283469B2 (en) * 2010-03-24 2012-10-09 National Tsing Hua University Perylene diimide derivative and organic semiconductor element using the same material
CN102234366B (zh) * 2010-04-29 2013-01-23 海洋王照明科技股份有限公司 含噻吩单元苝四羧酸二酰亚胺共聚物及其制备方法和应用
US20110269966A1 (en) 2010-04-30 2011-11-03 Deepak Shukla Semiconducting articles
US8530270B2 (en) 2010-04-30 2013-09-10 Eastman Kodak Company Methods of preparing semiconductive compositions and devices
US8411489B2 (en) 2010-04-30 2013-04-02 Eastman Kodak Company Semiconducting devices and methods of preparing
US8314265B2 (en) 2010-04-30 2012-11-20 Eastman Kodak Company Aromatic amic acids or amic esters and compositions
US8404892B2 (en) 2010-05-27 2013-03-26 Eastman Kodak Company Aromatic amic acid salts and compositions
CN103081149B (zh) 2010-08-29 2016-07-06 国立大学法人信州大学 有机半导体微粒材料、有机半导体薄膜、有机半导体膜形成用分散液、有机半导体薄膜的制造方法及有机薄膜晶体管
WO2014100961A1 (en) * 2012-12-24 2014-07-03 Rhodia Operations Use of compounds of the perylene type as acceptors in photovoltaics
KR102576999B1 (ko) * 2016-07-05 2023-09-12 삼성디스플레이 주식회사 액정표시장치
JP7464397B2 (ja) * 2020-01-31 2024-04-09 保土谷化学工業株式会社 ペリレン誘導体化合物、該化合物を用いた有機半導体用組成物、該有機半導体用組成物を用いた有機薄膜トランジスタ
CN118480043A (zh) * 2024-07-15 2024-08-13 潍坊科技学院 一种杂环纳米材料混合物、制备方法及应用

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Also Published As

Publication number Publication date
JP2008524869A (ja) 2008-07-10
TWI423493B (zh) 2014-01-11
WO2006068833A2 (en) 2006-06-29
US20060134823A1 (en) 2006-06-22
EP1829133A2 (en) 2007-09-05
KR20070095907A (ko) 2007-10-01
TW200629616A (en) 2006-08-16
CN101084590A (zh) 2007-12-05
US7198977B2 (en) 2007-04-03
WO2006068833A3 (en) 2007-01-11

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