TWI421304B - 經聚矽氧烷樹脂組成物包覆的半導體裝置以及用於包覆半導體裝置之聚矽氧烷樹脂錠 - Google Patents
經聚矽氧烷樹脂組成物包覆的半導體裝置以及用於包覆半導體裝置之聚矽氧烷樹脂錠 Download PDFInfo
- Publication number
- TWI421304B TWI421304B TW096126023A TW96126023A TWI421304B TW I421304 B TWI421304 B TW I421304B TW 096126023 A TW096126023 A TW 096126023A TW 96126023 A TW96126023 A TW 96126023A TW I421304 B TWI421304 B TW I421304B
- Authority
- TW
- Taiwan
- Prior art keywords
- sio
- group
- semiconductor device
- unit
- units
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 68
- 239000011342 resin composition Substances 0.000 title claims description 32
- 229920002050 silicone resin Polymers 0.000 title 2
- 239000011347 resin Substances 0.000 claims description 58
- 229920005989 resin Polymers 0.000 claims description 58
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 21
- -1 isocyanate compound Chemical class 0.000 claims description 16
- 238000000465 moulding Methods 0.000 claims description 15
- 239000007787 solid Substances 0.000 claims description 14
- 239000003054 catalyst Substances 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 11
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 11
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 10
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- 230000007062 hydrolysis Effects 0.000 claims description 10
- 238000006460 hydrolysis reaction Methods 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 125000003342 alkenyl group Chemical group 0.000 claims description 8
- 238000000748 compression moulding Methods 0.000 claims description 8
- 229920002554 vinyl polymer Polymers 0.000 claims description 8
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 7
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 7
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 6
- 125000000962 organic group Chemical group 0.000 claims description 6
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims description 5
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 claims description 5
- 125000005843 halogen group Chemical group 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 239000002318 adhesion promoter Substances 0.000 claims description 4
- 125000001931 aliphatic group Chemical group 0.000 claims description 4
- 125000003700 epoxy group Chemical group 0.000 claims description 4
- 238000012360 testing method Methods 0.000 claims description 4
- 125000004122 cyclic group Chemical group 0.000 claims description 3
- 125000000524 functional group Chemical group 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 125000004183 alkoxy alkyl group Chemical group 0.000 claims description 2
- 239000007859 condensation product Substances 0.000 claims description 2
- 239000012948 isocyanate Substances 0.000 claims description 2
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 239000000203 mixture Substances 0.000 description 38
- 239000000047 product Substances 0.000 description 21
- 239000000853 adhesive Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical compound CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 description 8
- 150000002430 hydrocarbons Chemical group 0.000 description 8
- 238000003786 synthesis reaction Methods 0.000 description 8
- 238000001721 transfer moulding Methods 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000007858 starting material Substances 0.000 description 7
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- ZTEHOZMYMCEYRM-UHFFFAOYSA-N 1-chlorodecane Chemical compound CCCCCCCCCCCl ZTEHOZMYMCEYRM-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 229910052707 ruthenium Inorganic materials 0.000 description 5
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 4
- JPEWDCTZJFUITH-UHFFFAOYSA-N 1-methoxydecane Chemical class CCCCCCCCCCOC JPEWDCTZJFUITH-UHFFFAOYSA-N 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 238000007259 addition reaction Methods 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 238000005227 gel permeation chromatography Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000006386 neutralization reaction Methods 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 239000011541 reaction mixture Substances 0.000 description 4
- 239000002966 varnish Substances 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- 239000004793 Polystyrene Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical group C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 3
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 125000004431 deuterium atom Chemical group 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 229920002223 polystyrene Polymers 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000009864 tensile test Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- QYLFHLNFIHBCPR-UHFFFAOYSA-N 1-ethynylcyclohexan-1-ol Chemical compound C#CC1(O)CCCCC1 QYLFHLNFIHBCPR-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052805 deuterium Inorganic materials 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 125000000687 hydroquinonyl group Chemical group C1(O)=C(C=C(O)C=C1)* 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
- 229910003475 inorganic filler Inorganic materials 0.000 description 2
- 125000000555 isopropenyl group Chemical group [H]\C([H])=C(\*)C([H])([H])[H] 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 description 2
- 239000002683 reaction inhibitor Substances 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000008247 solid mixture Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- JNSHJDXBICHABV-UHFFFAOYSA-N 11-oxatetracyclo[7.5.0.02,7.010,12]tetradeca-1(9),2,4,6,13-pentaene Chemical compound C12C(C=CC=3C4=CC=CC=C4CC13)O2 JNSHJDXBICHABV-UHFFFAOYSA-N 0.000 description 1
- RVKBRFNNOKOSTA-UHFFFAOYSA-N C(CC)C(C(Cl)(Cl)Cl)CCCCCCCC Chemical compound C(CC)C(C(Cl)(Cl)Cl)CCCCCCCC RVKBRFNNOKOSTA-UHFFFAOYSA-N 0.000 description 1
- KTDRJIZVBSFTJJ-UHFFFAOYSA-N C1(CCCCC1)C(C(Cl)(Cl)Cl)CCCCCCCC Chemical compound C1(CCCCC1)C(C(Cl)(Cl)Cl)CCCCCCCC KTDRJIZVBSFTJJ-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 206010040844 Skin exfoliation Diseases 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000004841 bisphenol A epoxy resin Substances 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000011353 cycloaliphatic epoxy resin Substances 0.000 description 1
- 125000000596 cyclohexenyl group Chemical group C1(=CCCCC1)* 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 125000006038 hexenyl group Chemical group 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- DIOQZVSQGTUSAI-UHFFFAOYSA-N n-butylhexane Natural products CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 238000006146 oximation reaction Methods 0.000 description 1
- 125000000466 oxiranyl group Chemical group 0.000 description 1
- 125000005702 oxyalkylene group Chemical group 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 125000002255 pentenyl group Chemical group C(=CCCC)* 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 150000003057 platinum Chemical class 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003283 rhodium Chemical class 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000005494 tarnishing Methods 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- ANUMBTODEQDFNN-UHFFFAOYSA-N trichloromethylcyclohexane Chemical compound ClC(Cl)(Cl)C1CCCCC1 ANUMBTODEQDFNN-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/045—Polysiloxanes containing less than 25 silicon atoms
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/70—Siloxanes defined by use of the MDTQ nomenclature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12043—Photo diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Light Receiving Elements (AREA)
Description
本非臨時的申請案主張2006年7月18日在日本提出申請之專利申請案第2006-195492號的35 U.S.C.§119(a)之優先權,其整個內容係併於本文中作為參考。
本發明係關於非發光半導體裝置的半導體裝置,其包含黏著至基材之非發光半導體裝置的半導體裝置,以LED(發光二極體)為典型代表(即,光偵測半導體裝置例如光偵測光電晶體、光電二極管、或光耦合器或者非發光半導體元件例如與發光/光偵測無關的各種半導體元件),其中非發光半導體元件係經具有低應力性質及透明性的硬化聚矽氧烷樹脂組成物包覆。更具體而言,本發明係關於經聚矽氧烷樹脂組成物包覆之非發光半導體裝置的半導體裝置,該組成物在室溫下為固體並具有硬化產品的某些性質、極佳的表面膠黏度及改善的強度性質。本發明亦係關於用於包覆半導體裝置之聚矽氧烷樹脂模塑錠。
對光偵測半導體裝置例如光偵測光電晶體、光電二極管、或光耦合器而言,示於圖1及2中所謂的"表面黏著型"及"插入黏著型"光偵測半導體裝置已被使用。在這些裝置中,置於導線電極上的光偵測半導體裝置係以透明樹脂包覆,並且大部分產品是以環氧樹脂包覆。然而,為降低對環境的衝擊,近來已禁止使用含鉛焊料,所以焊料迴焊是在高溫下實施,使得使用該環氧樹脂面臨高溫下變色的問題。
圖1及2顯示光偵測器1、聚矽氧烷黏晶材料之(silicone die bonding material)、導線3及4、金線5、環氧化物-聚矽氧烷混合物之硬化樹脂組成物6、及陶瓷外殼7。
諸如光偵測器之半導體元件係以環氧黏著劑(黏晶材料)固定至導線架、陶磁基材、或有機基材上,並以硬化後呈現透明的環氧樹脂包覆及保護,例如雙酚A環氧樹脂或脂環族環氧樹脂與酸酐硬化劑(專利文件1:JP-B2 3241338,專利文件2:JP-A 7-25987)。然而,具有較高抗熱性及抗光性的聚矽氧烷橡膠組成物近來被用於LED的包覆。但是,當用於電氣及電子零件的塗裝時,這些聚矽氧烷橡膠組成物會有表面膠黏的問題,並造成灰塵澱積。
同時,亦有人開發出克服上述問題的聚矽氧烷清漆。但是,該聚矽氧烷清漆會產生裂紋。因此,可以提供免於灰塵澱積(當用於電氣及電子零件的封裝時)且具有極佳抗龜裂性與衝擊強度之硬化產物的聚矽氧烷組成物有高度需求。在室溫下為固體並且可在傳統設備中藉轉移成型及壓縮成型而硬化的聚矽氧烷樹脂組成物亦有其需求。
與本發明有關的先前技藝揭示於上述文件中,以及以下文件中。
[專利文件1]JP-B2 3241338[專利文件2]JP-A 7-25987[專利文件3]JP-A 2005-76003[專利文件4]JP-A 2004-339482,對應於USP 7,019,100
習知藉加成反應而硬化的聚矽氧烷橡膠組成物可以藉由將聚有機矽氧烷樹脂摻至組成物中而在硬化後具有較高的強度。即使硬化物件的強度可藉該聚有機矽氧烷樹脂的加入而得到改善,但是,該物件仍有表面膠黏及灰塵澱積的問題。硬樹脂有衝擊強度不足的問題,特別是在熱衝擊試驗中會產生裂紋,這一直是個嚴重的問題。
本發明之目的係提供經加成硬化的聚矽氧烷樹脂組成物包覆的非發光半導體裝置之半導體裝置,該組成物形成具有改善之彈性及降低之表面膠黏度的硬化產物,同時在室溫下為硬樹脂,並且可以利用傳統模塑設備(例如轉移成型、壓縮成型及射出成型設備)方便地模製。本發明之另一目的係提供用於包覆該半導體裝置的聚矽氧烷樹脂錠。
為了解決上述問題,本發明的發明人曾作過廣泛的研究,並且發現經加成硬化型聚矽氧烷樹脂組成物(聚矽氧烷包覆劑)包覆的非發光半導體裝置之半導體裝置可以有效地實現所欲的信賴度,該組成物在室溫下為固體且在模塑溫度下為液體,並硬化成透明物件,該物件依據JIS K 6253以D型硬度計測得的硬度至少為30且拉伸試驗中的伸長率至少為5%。更具體而言,本發明人發現包含以下組份的加成硬化的聚矽氧烷樹脂組成物:(A)聚有機矽氧烷,其具有包含R1
SiO1.5
單元、R2 2
SiO單元及R3 a
R4 b
SiO(4-a-b)/2
單元的樹脂結構,其中R1
、R2
及R3
分別是甲基、乙基、丙基、環己基或苯基,R4
是乙烯基或烯丙基,a是0、1或2,b是1或2,a+b是2或3,並且對含烯基的有機聚矽氧烷而言,R2 2
SiO單元的重覆數目為5至300;及(B)聚有機氫矽氧烷,其具有包含R1
SiO1.5
單元、R2 2
SiO單元及R3 c
Hd
SiO(4-c-d)/2
單元的樹脂結構,其中R1
、R2
及R3
的定義如上,c是0、1或2,d是1或2,c+d是2或3,並且對聚有機氫矽氧烷而言,R2 2
SiO單元的重覆數目為5至300;可以形成具有改善之彈性及降低之表面膠黏度且在室溫下為硬樹脂的硬化產物,並且可藉傳統模塑設備方便地模製。本發明基於這些發現而得以完成。
因此,本發明提供非發光半導體裝置的半導體裝置以及用於包覆半導體裝置之聚矽氧烷樹脂錠。
(1)一種經聚矽氧烷樹脂組成物包覆的非發光半導體裝置之半導體裝置,該組成物在室溫下為固體且在模塑溫度下為液體,並硬化成透明物件,該物件依據JIS K 6253以D型硬度計測得的硬度至少為30且拉伸試驗中的伸長率至少為5%。
(2)如上述(1)之非發光半導體裝置的半導體裝置,其中聚矽氧烷樹脂組成物包含(A)聚有機矽氧烷,其具有包含R1
SiO1.5
單元、R2 2
SiO單元及R3 a
R4 b
SiO(4-a-b)/2
單元的樹脂結構,其中R1
、R2
及R3
分別是甲基、乙基、丙基、環己基或苯基,R4
是乙烯基或烯丙基,a是0、1或2,b是1或2,a+b是2或3,且R2 2
SiO單元的重覆數目為5至300;(B)聚有機氫矽氧烷,其具有包含R1
SiO1.5
單元、R2 2
SiO單元及R3 c
Hd
SiO(4-c-d)/2
單元的樹脂結構,其中R1
、R2
及R3
的定義如上,c是0、1或2,d是1或2,c+d是2或3,且R2 2
SiO單元的重覆數目為5至300,組份(B)的用量使得組份(B)中鍵結至矽原子之氫原子相對於組份(A)中之乙烯基或烯丙基的莫耳比為0.1至4.0;及(C)催化有效量的鉑族金屬觸媒。
(3)如上述(2)之非發光半導體裝置的半導體裝置,其中組份(A)及/或組份(B)含有矽烷醇基。
(4)如上述(1)至(3)中任一項之非發光半導體裝置的半導體裝置,其中聚矽氧烷樹脂組成物還包含至少一種選自以下的黏著助劑:直鏈或環狀有機矽氧烷低聚物,其分子內含有4至50個矽原子且含有至少兩個選自鍵結至矽原子之氫原子(SiH基)、鍵結至矽原子之烯基、烷氧矽烷基、及環氧基之官能基,及以下通式(1)所示的經有機氧基矽烷基改質之異氰酸酯化合物及/或其水解與縮合產物
其中R6
獨立地是下式(2)所示的有機基團
其中R7
是氫原子或含有1至8個碳原子的單價烴基,並且s是1至6之整數,或者是含有脂族不飽和鍵的單價烴基,且其中至少一個R6
是式(2)的有機基團。
(5)一種用於包覆非發光半導體裝置的半導體裝置之聚矽氧烷樹脂錠,其係經由壓縮模塑上述(1)至(3)中任一項之聚矽氧烷樹脂組成物而製得。
本發明使用室溫下為固體(硬樹脂)的聚矽氧烷樹脂組成物,因此傳統方法(例如轉移成型法)可用於製造其硬化產物。此外,該硬化物件具有極佳的彈性及降低的表面膠黏度並且是硬樹脂,因此,經該聚矽氧烷樹脂組成物包覆的非發光半導體裝置之半導體裝置(例如光偵測半導體裝置)被施以熱循環時,其具有極高的信賴度,因此可以用於難以使用傳統半導體封裝聚矽氧烷的應用中。
本發明之半導體裝置是經聚矽氧烷樹脂組成物包覆的半導體裝置,該組成物在室溫下為固體且在模塑溫度下變為液體,並硬化成透明物件,該物件依據JIS K 6253以D型硬度計測得的硬度至少為30且拉伸試驗中的伸長率至少為5%。
在此半導體裝置中,可使硬化物件具有上述性質的較佳聚矽氧烷樹脂組成物包含(A)具有樹脂結構的聚有機矽氧烷,(B)具有樹脂結構的聚有機氫矽氧烷,(C)鉑族觸媒,及(D)視情況使用的組份。
(A)具有樹脂結構的聚有機矽氧烷具有樹脂結構(即,三維網絡結構)的聚有機矽氧烷是本發明之聚矽氧烷樹脂組成物的重要組份,其具有包含R1
SiO1.5
單元、R2 2
SiO單元及R3 a
R4 b
SiO(4-a-b)/2
單元的樹脂結構(即,三維網絡結構),其中R1
、R2
及R3
分別是甲基、乙基、丙基、環己基或苯基,R4
是乙烯基或烯丙基,a是0、1或2,b是1或2,a+b是2或3,且R2 2
SiO單元的重覆數目為5至300,並以10至200為較佳,以10至100為更佳。"R2 2
SiO單元的重覆數目為5至300"係指組份(A)中所有R2 2
SiO單元的至少50莫耳%(50至100莫耳%),並且特別是至少80莫耳%(80至100莫耳%),形成具有以下結構的直鏈二有機聚矽氧烷鏈:
其中m是5至300之整數,且剩餘的R2 2
SiO單元不涵蓋含有5個或更多個R2 2
SiO單元的直鏈結構(即,以單體R2 2
SiO單元或者最高含有4個R2 2
SiO單元之R2 2
SiO單元的鏈存在)。
在此組成中,R2 2
SiO單元形成鏈狀聚合物,並且此聚合物可藉引入R1
SiO1.5
單元至聚合物中而轉換成分支或網絡型態的聚合物。R3 a
R4 b
SiO(4-a-b)/2
單元中的R4
(乙烯基或烯丙基)與組份(B)之R3 c
Hd
SiO(4-c-d)/2
單元中鍵結至矽原子的氫原子(即,SiH基)如下文所述進行加成反應(氫矽烷化),由是形成硬化產物。
考量硬化產物的物理性質,構成組份(A)之R1
SiO1.5
單元、R2 2
SiO單元及R3 a
R4 b
SiO(4-a-b)/2
單元的莫耳比以(90至24):(75至9):(50至1)為較佳,特別是(70至28):(70至20):(10至2)。
考量處理便利性及可硬化性,組份(A)最好是重量平均分子量為3,000至1,000,000(特別是10,000至100,000)的固體或者半固體聚有機矽氧烷,重量平均分子量係由凝膠滲透層析法(GPC)測得以聚苯乙烯計的分子量。
具有樹脂結構的該聚有機矽氧烷可藉以例如下方法製得:在酸的存在下將分別作為各單元之起始物的化合物之組合物同時施以水解及縮合作用。
R1
SiO1.5
單元之起始物的範例包括MeSiCl3
、EtSiCl3
、PhSiCl3
(其中Me表示甲基,Et表示乙基,Ph表示苯基,並且這些縮寫亦適用以下的說明)、丙基三氯矽烷、環己基三氯矽烷、及烷氧基矽烷例如對應各氯矽烷的甲氧基矽烷。
R2 2
SiO單元之起始物的範例包括ClMe2
SiO(Me2
SiO)q
SiMe2
Cl,ClMe2
SiO(Me2
SiO)p
(PhMeSiO)q
SiMe2
Cl,ClMe2
SiO(Me2
SiO)p
(Ph2
SiO)q
SiMe2
Cl,HOMe2
SiO(Me2
SiO)q
SiMe2
OH,HOMe2
SiO(Me2
SiO)p
(PhMeSiO)q
SiMe2
OH,HOMe2
SiO(Me2
SiO)p
(Ph2
SiO)q
SiMe2
OH,MeOMe2
SiO(Me2
SiO)q
SiMe2
OMe,MeOMe2
SiO(Me2
SiO)p
(PhMeSiO)q
SiMe2
OMe,及MeOMe2
SiO(Me2
SiO)p
(Ph2
SiO)q
SiMe2
OMe,其中p是5至150之整數,且q是5至300之整數。
名詞"R3 a
R4 b
SiO(4-a-b)/2
單元"係指至少一個選自R3
R4
SiO單元、R3 2
R4
SiO0.5
單元、R4 2
SiO單元及R3
R4 2
SiO0.5
單元之矽氧烷單元的任意組合,並且R3 a
R4 b
SiO(4-a-b)/2
單元之起始物的範例包括Me2
ViSiCl、MeViSiCl2
、Ph2
ViSiCl(其中Vi表示乙烯基,並且此縮寫亦適用以下的說明)、PhViSiCl2
、及烷氧基矽烷例如對應各氯矽烷的甲氧基矽烷。
組份(A)可以是含有含矽烷醇基之矽氧烷單元者,其係於R1
SiO1.5
單元、R2 2
SiO單元及/或R3 a
R4 b
SiO(4-a-b)/2
單元的同時水解及縮合作用中以副產物形式製得,其相對於所有矽氧烷單元的量最高至約10莫耳%(0至10莫耳%),並以最高至約5莫耳%(0至5莫耳%)為較佳。對應於矽氧烷單元之含矽烷醇基的矽氧烷單元之範例包括R1
(HO)SiO單元、R1
(HO)2
SiO0.5
單元、R2 2
(HO)SiO0.5
單元、R3 a
R4 b
(HO)SiO(3-a-b)/2
單元及R3 a
R4 b
(HO)2
SiO(2-a-b)/2
單元(其中a是0或1,b是1或2,且a+b是1或2)。
(B)具樹脂結構的聚有機氫矽氧烷具樹脂結構(即,三維網絡結構)的聚有機氫矽氧烷是本發明之聚矽氧烷樹脂組成物的重要組份,其具有包含R1
SiO1.5
單元、R2 2
SiO單元及R3 c
Hd
SiO(4-c-d)/2
單元的樹脂結構,其中R1
、R2
及R3
的定義如上,c是0、1或2,d是1或2,c+d是2或3,並且R2 2
SiO單元的重覆數目為5至300,並以10至200為較佳,以10至100為更佳。"R2 2
SiO單元的重覆數目為5至300"係指組份(B)中所有R2 2
SiO單元的至少50莫耳%(50至100莫耳%),並且特別是至少80莫耳%(80至100莫耳%),形成具有以下結構之直鏈二有機聚矽氧烷鏈:
其中m是5至300之整數,且剩餘的R2 2
SiO單元不涵蓋含有5個或更多個R2 2
SiO單元的直鏈結構(即,以單體R2 2
SiO單元或者最高含有4個R2 2
SiO單元之R2 2
SiO單元的鏈存在)。
R1
SiO1.5
單元、R2 2
SiO單元及R3 c
Hd
SiO(4-c-d)/2
單元在該組成物中的功能說明如上。
考量硬化產物的物理性質,R1
SiO1.5
單元、R2 2
SiO單元及R3 c
Hd
SiO(4-c-d)/2
單元的莫耳比以(90至24):(75至9):(50至1)為較佳,特別是(70至28):(70至20):(10至2)。
考量硬化產物的處理便利性及物理性質,組份(B)最好是重量平均分子量為3,000至1,000,000(特別是10,000至100,000)的聚有機氫矽氧烷,重量平均分子量係GPC測得的以聚苯乙烯計之分子量。
具有樹脂結構的該聚有機氫矽氧烷可藉例如以下方式合成而得:將分別作為各單元之起始物的化合物之組合物同時施以水解及縮合作用。
R1
SiO1.5
單元之起始物的範例包括MeSiCl3
、EtSiCl3
、PhSiCl3
、丙基三氯矽烷、環己基三氯矽烷、及烷氧基矽烷例如對應各氯矽烷的甲氧基矽烷。
R2 2
SiO單元之起始物的範例包括ClMe2
SiO(Me2
SiO)q
SiMe2
Cl,ClMe2
SiO(Me2
SiO)p
(PhMeSiO)q
SiMe2
Cl,ClMe2
SiO(Me2
SiO)p
(Ph2
SiO)q
SiMe2
Cl,HOMe2
SiO(Me2
SiO)q
SiMe2
OH,HOMe2
SiO(Me2
SiO)p
(PhMeSiO)q
SiMe2
OH,HOMe2
SiO(Me2
SiO)p
(Ph2
SiO)q
SiMe2
OH,MeOMe2
SiO(Me2
SiO)q
SiMe2
OMe,MeOMe2
SiO(Me2
SiO)p
(PhMeSiO)q
SiMe2
OMe,及MeOMe2
SiO(Me2
SiO)p
(Ph2
SiO)q
SiMe2
OMe,其中p是5至150之整數,且q是5至300之整數。
名詞"R3 c
Hd
SiO(4-c-d)/2
單元"係指至少一個選自R3
R5
SiO單元、R3 2
R5
SiO0.5
單元、R5 2
SiO單元及R3
R5 2
SiO0.5
單元之矽氧烷單元的任意組合,並且R3 c
Hd
SiO(4-c-d)/2
單元之起始物的範例包括Me2
HSiCl、MeHSiCl2
、Ph2
HSiCl、PhHSiCl2
及烷氧基矽烷例如對應各氯矽烷的甲氧基矽烷。對應矽氧烷單元之含矽烷醇基的矽氧烷單元包括R1
(HO)SiO單元、R1
(HO)2
SiO0.5
單元、R2 2
(HO)SiO0.5
單元、R3 c
Hd
(HO)SiO(3-c-d)/2
單元及R3 c
Hd
(HO)2
SiO(2-c-d)/2
單元,其中c是0或1,d是1或2,且c+d是1或2。
聚有機氫矽氧烷的摻入量使得組份(B)中鍵結至矽原子的氫原子(SiH基團)對組份(A)中乙烯基或烯丙基的莫耳比為0.1至4.0,並以0.5至3.0為較佳,以0.8至2.0為更佳。當莫耳比低於0.1時,硬化反應無法進行且硬化物件難以製得。當該比率超過4.0時,硬化物件中將殘存大量未反應的SiH基團,使得其物理性質隨時間而改變。
組份(B)可以是含有含矽烷醇基之矽氧烷單元者,其係於同時水解及縮合R1
SiO1.5
單元、R2 2
SiO單元及/或R3 c
Hd
SiO(4-c-d)/2
單元的過程中以副產物的形式生成,且其相對於所有矽氧烷單元的量最高至約10莫耳%(0至10莫耳%),並以最高至約5莫耳%(0至5莫耳%)為較佳。
(C)鉑族觸媒此觸媒組份係摻至本發明之組成物中以誘發加成硬化反應,並且觸媒組份的範例包括鉑、鈀及銠系列觸媒。就成本考量,較佳者為鉑系列觸媒例如鉑、鉑黑,氯鉑酸如H2
PtCl.xH2
O、K2
PtCl、KHPtCl.xH2
O、K2
PtCl4
、K2
PtCl4
.xH2
O及PtO2
.xH2
O(其中x是正整數),及該觸媒與烴(例如烯烴、醇)或含乙烯基之聚有機矽氧烷形成的錯合物,這些觸媒可以單獨使用或者兩或多種組合使用。該觸媒組份可以所謂的"催化量"摻入,其通常為0.1至500 ppm,特別是0.5至100 ppm,該量係以鉑族金屬重量相對於組份(A)與(B)的總量計。
(D)其他添加物本發明之組成物,必要時,除了上述組份(A)至(C)之外,亦可含有本技藝中習知的多種添加物。該等添加物的範例包括強化用無機填料,例如烟矽石及烟二氧化鈦,以及非強化用無機填料,例如碳酸鈣、矽酸鈣、二氧化鈦、氧化鐵、碳黑及氧化鋅,這些添加物可以最高600重量份(0至600重量份)的量加入,該加入量係相對於100重量份之組份(A)與(B)的總量。
為了賦予本發明之組成物以黏著性,該組成物可以視需要含有黏著助劑,例如直鏈或環狀有機矽氧烷低聚物,其分子內含有4至50個(最好含有4至20個)矽原子及至少兩個(最好2或3個)選自鍵結至矽原子之氫原子(SiH基)、鍵結至矽原子之烯基(例如,Si-CH=CH2
基)、烷氧矽烷基(例如三甲氧基矽烷基)、環氧基(例如縮水甘油氧基丙基及3,4-環氧環己基乙基)之官能基;以下通式(1)所示的經有機氧基矽烷基改質之異氰尿酸酯化合物及/或其水解與縮合產物(經有機矽氧烷改質的異氰尿酸酯化合物)。
R6
之含有脂族不飽和鍵的單價烴基之實例包括含有2至8個(特別是2至6個)碳原子的烯基,例如乙烯基、烯丙基、丙烯基、異丙烯基、丁烯基、異丁烯基、戊烯基、己烯基及環己烯基。R7
之單價烴基的實例包括含有1至8個(特別是1至6個)碳原子的單價烴基,例如烷基如甲基、乙基、丙基、異丙基、丁基、異丁基、第三丁基、戊基、己基及環己基;烯基,類似於以上R6
所述之乙烯基、烯丙基、丙烯基、異丙烯基等,以及芳基如苯基。
黏著助劑的範例包括下式所示的化合物。
在這些有機聚矽氧烷化合物中,能在硬化後實現最佳黏著性的化合物為分子內含有鍵結至矽原子之烷氧基及鍵結至矽原子之烯基或氫原子(SiH基)者。
在本發明中,黏著助劑(一種視需要使用的組份)相對於100重量份之組份(A)與(B)的總量之加入量通常為最高至約10重量份(即,0至10重量份),並以約0.1至8重量份為較佳,以約0.2至5重量份為更佳。當摻入量過低時,生成的組成物可能具有不佳的黏著性,當其含量過高時,可能會對硬化產物的硬度及表面膠黏性造成不利的影響。
本發明之聚矽氧烷組成物可藉上述組份的均勻混合而製得。但是,本發明之聚矽氧烷組成物通常分為兩部份儲存,以免儲存期間發生硬化作用,並且該兩部份係於組成物使用之前方行混合。當然,該聚矽氧烷組成物亦可製成一份並加入少量的硬化抑制劑例如乙炔醇。該組成物藉由視需要實施之加熱立即硬化成具有極佳硬度且無表面膠黏性的彈性硬化產物以及具有降低之表面膠黏性的硬化物件。
模製過程中用於硬化的條件通常是50至200℃(特別是70至180℃)下1至30分鐘(特別是2至10分鐘)。後焙烤可在50至200℃(特別是70至180℃)下實施0.1至10小時(特別是1至4小時)。
使用於本發明中的聚矽氧烷樹脂組成物在室溫(25℃)下是固體(不具流動性),並且在模塑溫度下是液體(具流動性)。硬化後,其依據JIS K 6253以D型硬度計在室溫(25℃)下測得的硬度至少為30,並以30至80為較佳,以35至60為更佳。當硬度太低時,樹脂表面膠黏性將會不適當地高,並且在樹脂黏著至半導體元件且運輸該黏著型半導體元件時,該產物的處理便利性不足。
該硬化產物以JIS K 6251測得的伸長率至少為5%,並以至少10%為較佳,以至少20%為更佳。雖然伸長率的上限可以適當地決定,但是其上限通常高達150%,特別是高達100%。如果伸長率太低,當產物面臨熱衝擊時,其抗龜裂性將會變差。
硬化產物呈現透明(無色),並且更佳者是具有至少90%的透光度,透光度係利用分光光度計在400 nm至可見光之範圍對1毫米厚的硬化板量測而得,其中以空氣作為參考物。
用於模塑本發明之半導體裝置的聚矽氧烷樹脂組成物具有高度處理便利性,因為其在室溫下是固體或半固體,並且可以利用多種習知之模塑樹脂的方法模塑。當使用轉移成型時,聚矽氧烷樹脂組成物事先在低溫(室溫附近)下形成圓柱狀或其他預定形狀的錠劑,轉移成型可以此錠劑實施。另外,將溶劑加至該聚矽氧烷樹脂組成物中,可以製得塗佈劑或灌封劑。
本發明之用於包覆半導體裝置的聚矽氧烷樹脂組成物亦可以視需要包含其他樹脂、抗變色劑及光散射劑。
在本發明中,非發光半導體裝置的半導體裝置(非發光半導體元件)之範例包括光偵測半導體裝置例如光偵測光電晶體、光電二極管及光耦合器。當本發明之組成物係藉由摻入視需要使用的組份而作為塗佈劑或灌封劑時,其可用於包覆與發光/光偵測無關且已經傳統環氧樹脂模塑化合物包覆的各種半導體元件,例如電晶體、封裝-球狀矩陣排列及晶圓級封裝。
當其是圖1所示之表面黏著型光偵測半導體裝置及圖2所示之插入黏著型光偵測半導體裝置時,經過硬化的是本發明之組成物而非圖1及2中以數字6表示的環氧化物-聚矽氧烷樹脂混合物組成物,因此,硬化可以聚矽氧烷樹脂組成物經由傳統的轉移成型或射出成型而完成,其通常是在高壓及溫度150至180℃下實施1至3分鐘。當其是表面黏著型裝置時,將硬化產物以切割鋸(dicing saw)切成各別的半導體裝置而立即製得半導體裝置。
用於模塑的壓力可視聚矽氧烷樹脂的黏度而變化。但是,壓力通常為10公斤/平方公分至100公斤/平方公分。
以下將參考合成例、實例及比較例對本發明作詳細說明,但是其不以任何方式限制本發明之範圍。在以下實例中,所用的黏度是指25℃下測得的數值,重量平均分子量是凝膠滲透層析法(GPC)測得的以聚苯乙烯計之分子量。Ph表示苯基,Me表示甲基且Vi表示乙烯基。
將27莫耳有機矽烷(以PhSiCl3
表示)、1莫耳ClMe2
SiO(Me2
SiO)33
SiMe2
Cl及3莫耳MeViSiCl2
溶解於甲苯溶劑中,並將溶液逐滴加至水中以進行同時水解。水洗反應混合物及鹼洗中和之後,移除水並蒸除溶劑,製得含乙烯基的樹脂。此樹脂的重量平均分子量為62,000且熔點為60℃。
將27莫耳有機矽烷(以PhSiCl3
表示)、1莫耳ClMe2
SiO(Me2
SiO)33
SiMe2
Cl及3莫耳MeHSiCl2
溶解於甲苯溶劑中,並將溶液逐滴加至水中以進行同時水解。水洗反應混合物及鹼洗中和之後,移除水並蒸除溶劑,製得含氫矽基的樹脂。此樹脂的重量平均分子量為58,000且熔點為58℃。
將27莫耳有機矽烷(以PhSiCl3
表示)、1莫耳ClMe2
SiO(Me2
SiO)33
SiMe2
Cl及3莫耳Me2
ViSiCl溶解於甲苯溶劑中,並將溶液逐滴加至水中以進行同時水解。水洗反應混合物及鹼洗中和之後,移除水並蒸除溶劑,製得含乙烯基的樹脂。此樹脂的重量平均分子量為63,000且熔點為63℃。
將27莫耳有機矽烷(以PhSiCl3
表示)、1莫耳ClMe2
SiO(Me2
SiO)33
SiMe2
Cl及3莫耳Me2
HSiCl溶解於甲苯溶劑中,並將溶液逐滴加至水中以進行同時水解。水洗反應混合物及鹼洗中和之後,移除水並蒸除溶劑,製得含氫矽基的樹脂。此樹脂的重量平均分子量為57,000且熔點為56℃。
將189克合成例1中製得之含乙烯基的樹脂、189克合成例2中製得之含氫矽基的樹脂、0.2克乙炔基環己醇(一種乙炔醇系反應抑制劑)及0.1克經辛醇改質之氯鉑酸的溶液置於加熱至60℃的行星式混合機中,並將該混合物充分攪拌。將0.5重量份(相對於100重量份含乙烯基之樹脂與含氫矽基之樹脂的總量)具有以下結構式的添加劑(黏著組份)加至混合物中,製得聚矽氧烷樹脂組成物。
當冷卻至室溫時,此聚矽氧烷樹脂組成物變為固體,將此固體組成物粉碎以製得粉末。
示於圖1中的光偵測半導體裝置係以對可見光敏感的光電晶體晶片作為光偵測光電晶體元件而製得。光偵測器1係藉由將聚矽氧烷黏晶材料(die bonding material)2在180℃下加熱10分鐘而固著至導線電極3上。更具體而言,光偵測器1係經由金線5連接至導線電極3及4,並且實例1的聚矽氧烷樹脂組成物係藉150℃下3分鐘的壓縮成型而硬化,硬化物件自模具中移出之後,將硬化物件在150℃下施以4小時的後焙烤,並切成各別的晶片,即製得表面黏著型封裝體。
同時,光偵測器1係藉由將聚矽氧烷黏晶材料2在180℃下加熱10分鐘而固著至導線電極3上。將生成的導線架置於加熱至150℃的模具(適合用於轉移成型的模具)中,並將在室溫下壓縮成型本發明之粉末組成物而製得的圓柱形錠劑加至轉移成型設備的鍋中。以活塞施加壓力至樹脂,由是在包括模塑溫度為150℃、模塑時間為3分鐘且模塑壓力為50公斤/平方公分的條件下使樹脂轉移及模塑。後焙烤係於150℃下實施4小時,由是製得插入黏著型封裝體。
將藉由上述流程製得的兩種光偵測半導體裝置(10,對各類型而言)施以1000次循環的熱衝擊試驗(低溫,-40℃;高溫,120℃),以評估外觀(龜裂)及黏晶材料與聚矽氧烷模塑樹脂之交界處發生的剝離數。結果示於表2及3中。
亦將此組成物在壓縮成型設備中施以150℃ 5分鐘的壓縮成型。再將硬化物件施以150℃ 4分鐘的二次硬化。依據JIS K6251及JIS K6253評估生成物件的抗張強度(厚度0.2毫米)、伸長率(厚度0.2毫米)及硬度(以D型硬度計量測)。表面膠黏性係以手指觸摸表面來確認。亦可將物件置於市售的銀粉(平均粒徑5微米)中,在物件自銀粉中移出後,以空氣吹其表面以測試表面上的粉塵(即,銀粉)是否可被去除。組成物亦於鋁盤(直徑6厘米;深度0.6毫米)中模塑,並將硬化樣品施以-50℃至150℃的熱循環以確認是否產生裂紋。量測結果示於表1中。
將189克合成例3中製得之含乙烯基的樹脂、189克合成例4中製得之含氫矽基的樹脂、0.2克乙炔基環己醇(一種乙炔醇系反應抑制劑)及0.1克經辛醇改質之氯鉑酸的溶液置於加熱至60℃的行星式混合機中,將該混合物充分攪拌。將0.5重量份(相對於100重量份含乙烯基之樹脂與含氫矽基之樹脂的總量)具有以下結構式的添加劑(黏著組份)加至混合物中,製得聚矽氧烷樹脂組成物。
當冷卻至室溫時,此聚矽氧烷樹脂組成物變為固體,將此固體組成物粉碎以製得粉末。
重覆實例1的流程,製得光偵測光電晶體並對其評估。二次硬化之後,重覆實例1的流程,評估產物的機械性質(抗張強度、硬度及伸長率)、表面膠黏性及裂紋生成(熱循環評估)。結果示於表1至3中。
重覆實例的流程,但是以市售的聚矽氧烷清漆製得模塑及硬化物件,該清漆(Shin-Etsu Chemical Co.,Ltd.製造的KJR-632)含有含乙烯基的聚有機矽氧烷樹脂(重覆單元的數目為5至300)但不含直鏈二有機聚矽氧烷樹脂作為主要組份並藉加成反應而硬化。二次硬化之後,重覆實例1的流程,評估產物的機械性質(抗張強度、硬度及伸長率)、表面膠黏性及裂紋生成(熱循環評估)。結果示於表1至3中。
重覆實例的流程,但是以市售的聚矽氧烷清漆製得模塑及硬化物件,該清漆(Shin-Etsu Chemical Co.,Ltd.製造的KJR-632L-1)含有含乙烯基的聚有機矽氧烷樹脂(重覆單元的數目為5至300)但不含直鏈二有機聚矽氧烷樹脂作為主要組份並藉加成反應而硬化。二次硬化之後,重覆實例1的流程,評估產物的機械性質(抗張強度、硬度及伸長率)、表面膠黏性及裂紋生成(熱循環評估)。結果示於表1至3中。
1...光偵測器
2...聚矽氧烷黏晶材料
3...導線
4...導線
5...金線
6...環氧化物-聚矽氧烷混合物之硬化樹脂組成物
7...陶瓷外殼
圖1是表面黏著光偵測光電晶體半導體裝置的截面圖。
圖2是插入黏著光偵測光電晶體半導體裝置的截面圖。
1...光偵測器
2...聚矽氧烷黏晶材料
3...導線
4...導線
5...金線
6...環氧化物-聚矽氧烷混合物之硬化樹脂組成物
7...陶瓷外殼
Claims (4)
- 一種非發光半導體裝置的半導體裝置,而該半導體裝置係經包含下列的聚矽氧烷樹脂組成物所包覆:(A)聚有機矽氧烷,其具有包含R1 SiO1.5 單元、R2 2 SiO單元及R3 a R4 b SiO(4-a-b)/2 單元的樹脂結構,其中R1 、R2 及R3 分別是甲基、乙基、丙基、環己基或苯基,R4 是乙烯基或烯丙基,a是0、1或2,b是1或2,且a+b是2或3,且R2 2 SiO單元的重複數目為5至300;(B)聚有機氫矽氧烷,其具有包含R1 SiO1.5 單元、R2 2 SiO單元及R3 c Hd SiO(4-c-d)/2 單元的樹脂結構,其中R1 、R2 及R3 的定義如上,c是0、1或2,d是1或2,且c+d是2或3,且R2 2 SiO單元的重複數目為5至300,組份(B)的用量是使得組份(B)中鍵結至矽原子之氫原子相對於組份(A)中之乙烯基或烯丙基的莫耳比為0.1至4.0者;及(C)催化有效量的鉑族金屬觸媒,該聚矽氧烷樹脂組成物在室溫下為固體且在模塑溫度下為液體且硬化成透明物件,而該物件依據JIS K 6253以D型硬度計測得的硬度為至少30且拉伸試驗中的伸長率為至少5%。
- 如申請專利範圍第1項之非發光半導體裝置的半導體裝置,其中該組份(A)及/或組份(B)含有矽烷醇基。
- 如申請專利範圍第1項之非發光半導體裝置的半 導體裝置,其中該聚矽氧烷樹脂組成物還包含至少一種選自以下的黏著助劑:含有4至50個矽原子的直鏈或環狀有機矽氧烷低聚物,其一個分子內含有至少兩個選自鍵結至矽原子之氫原子(SiH基)、鍵結至矽原子之烯基、烷氧矽烷基、及環氧基的官能基,及以下通式(1)所示的經有機氧基矽烷基改質之異氰酸酯化合物及/或其水解與縮合產物
- 一種用於包覆非發光半導體裝置的半導體裝置之聚矽氧烷樹脂錠,其係經由壓縮模塑申請專利範圍第1項中所定義之聚矽氧烷樹脂組成物而製得。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006195492A JP4636275B2 (ja) | 2006-07-18 | 2006-07-18 | シリコーン樹脂組成物で封止された半導体装置及び該半導体装置封止用シリコーン樹脂タブレット |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200813162A TW200813162A (en) | 2008-03-16 |
TWI421304B true TWI421304B (zh) | 2014-01-01 |
Family
ID=38829672
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096126023A TWI421304B (zh) | 2006-07-18 | 2007-07-17 | 經聚矽氧烷樹脂組成物包覆的半導體裝置以及用於包覆半導體裝置之聚矽氧烷樹脂錠 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7807736B2 (zh) |
EP (1) | EP1889877A1 (zh) |
JP (1) | JP4636275B2 (zh) |
KR (1) | KR100988590B1 (zh) |
TW (1) | TWI421304B (zh) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI313943B (en) * | 2006-10-24 | 2009-08-21 | Chipmos Technologies Inc | Light emitting chip package and manufacturing thereof |
JP4623322B2 (ja) | 2007-12-26 | 2011-02-02 | 信越化学工業株式会社 | 光半導体ケース形成用白色熱硬化性シリコーン樹脂組成物並びに光半導体ケース及びその成形方法 |
JP4678415B2 (ja) * | 2008-03-18 | 2011-04-27 | 信越化学工業株式会社 | 光半導体ケース形成用白色熱硬化性シリコーン樹脂組成物並びに光半導体ケース |
JP5705416B2 (ja) * | 2008-04-11 | 2015-04-22 | モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 | 半導体用硬化性シリコーン組成物及びそれを用いた半導体装置 |
JP2009256400A (ja) * | 2008-04-11 | 2009-11-05 | Shin Etsu Chem Co Ltd | 半導体素子用シリコーン接着剤 |
JP5201063B2 (ja) * | 2008-04-15 | 2013-06-05 | 信越化学工業株式会社 | 付加硬化型シリコーン組成物及びその硬化物 |
JP2010021533A (ja) | 2008-06-09 | 2010-01-28 | Shin-Etsu Chemical Co Ltd | 光半導体ケース形成用白色熱硬化性シリコーン樹脂組成物及び光半導体ケース |
JP2010018786A (ja) | 2008-06-09 | 2010-01-28 | Shin-Etsu Chemical Co Ltd | 光半導体ケース形成用白色熱硬化性シリコーン樹脂組成物及び光半導体ケース |
JP5179302B2 (ja) * | 2008-09-11 | 2013-04-10 | モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 | 自己接着性ポリオルガノシロキサン組成物 |
JP2010090363A (ja) * | 2008-09-11 | 2010-04-22 | Shin-Etsu Chemical Co Ltd | 硬化性シリコーン樹脂組成物、その硬化物および該組成物からなる遮光性シリコーン接着シート |
TWI483418B (zh) * | 2009-04-09 | 2015-05-01 | Lextar Electronics Corp | 發光二極體封裝方法 |
JP5602385B2 (ja) * | 2009-04-17 | 2014-10-08 | モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 | 接着性ポリオルガノシロキサン組成物 |
CN102712756B (zh) * | 2010-01-25 | 2017-05-03 | Lg化学株式会社 | 有机硅树脂 |
US9379296B2 (en) | 2010-01-25 | 2016-06-28 | Lg Chem, Ltd. | Silicone resin |
KR101675067B1 (ko) | 2010-06-08 | 2016-11-11 | 삼성디스플레이 주식회사 | 실리콘 조성물 및 이를 포함하는 유기 발광 소자 |
US8865830B2 (en) | 2011-02-04 | 2014-10-21 | Dow Corning Corporation | Curable organosiloxane block copolymer emulsions |
JP2013004905A (ja) * | 2011-06-21 | 2013-01-07 | Mitsubishi Chemicals Corp | 半導体発光装置用パッケージ及び半導体発光装置 |
JP5652387B2 (ja) * | 2011-12-22 | 2015-01-14 | 信越化学工業株式会社 | 高信頼性硬化性シリコーン樹脂組成物及びそれを使用した光半導体装置 |
JP6358960B2 (ja) | 2012-02-09 | 2018-07-18 | ダウ シリコーンズ コーポレーション | 勾配ポリマー構造及び方法 |
EP2828691A2 (en) | 2012-03-20 | 2015-01-28 | Dow Corning Corporation | Light guide and associated light assemblies |
JP2013221082A (ja) * | 2012-04-17 | 2013-10-28 | Shin-Etsu Chemical Co Ltd | 付加硬化型シリコーン樹脂組成物、並びに該組成物からなるシート、シート状硬化物、及びダイアタッチ材 |
WO2014100652A1 (en) | 2012-12-21 | 2014-06-26 | Dow Corning Corporation | Layered polymer structures and methods |
WO2016120953A1 (ja) | 2015-01-26 | 2016-08-04 | セントラル硝子株式会社 | 半導体封止用硬化性樹脂組成物およびその硬化物、並びにこれらを用いた半導体装置 |
KR102552820B1 (ko) | 2018-07-17 | 2023-07-07 | 모멘티브퍼포먼스머티리얼스코리아 주식회사 | 광학 투명 레진 및 이를 이용하여 형성된 전자 소자 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050006794A1 (en) * | 2003-07-09 | 2005-01-13 | Tsutomu Kashiwagi | Silicone rubber composition, light-emitting semiconductor embedding/protecting material and light-emitting semiconductor device |
TW200522400A (en) * | 2003-11-20 | 2005-07-01 | Shinetsu Chemical Co | Epoxy/silicone mixed resin composition and light-emitting semiconductor device |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0725987A (ja) | 1993-07-14 | 1995-01-27 | Nitto Denko Corp | 光半導体封止用エポキシ樹脂組成物 |
JP3241338B2 (ja) | 1998-01-26 | 2001-12-25 | 日亜化学工業株式会社 | 半導体発光装置 |
JP2001139894A (ja) * | 1999-11-15 | 2001-05-22 | Dow Corning Toray Silicone Co Ltd | シリコーン系接着性シート、および半導体装置 |
JP3912525B2 (ja) * | 2002-12-12 | 2007-05-09 | 信越化学工業株式会社 | 付加硬化型シリコーンゴム組成物及び粘着ゴムシート |
JP4338554B2 (ja) | 2003-04-23 | 2009-10-07 | 信越化学工業株式会社 | 硬化性シリコーン樹脂組成物 |
US7019100B2 (en) | 2003-04-23 | 2006-03-28 | Shin-Etsu Chemical Co., Ltd. | Curable silicone resin composition |
JP4586967B2 (ja) * | 2003-07-09 | 2010-11-24 | 信越化学工業株式会社 | 発光半導体被覆保護材及び発光半導体装置 |
JP4180474B2 (ja) | 2003-09-03 | 2008-11-12 | モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 | 付加硬化型シリコーン組成物 |
JP5392805B2 (ja) * | 2005-06-28 | 2014-01-22 | 東レ・ダウコーニング株式会社 | 硬化性オルガノポリシロキサン樹脂組成物および光学部材 |
-
2006
- 2006-07-18 JP JP2006195492A patent/JP4636275B2/ja active Active
-
2007
- 2007-07-17 US US11/778,980 patent/US7807736B2/en active Active
- 2007-07-17 TW TW096126023A patent/TWI421304B/zh active
- 2007-07-17 EP EP07013967A patent/EP1889877A1/en not_active Withdrawn
- 2007-07-18 KR KR1020070071858A patent/KR100988590B1/ko active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050006794A1 (en) * | 2003-07-09 | 2005-01-13 | Tsutomu Kashiwagi | Silicone rubber composition, light-emitting semiconductor embedding/protecting material and light-emitting semiconductor device |
TW200522400A (en) * | 2003-11-20 | 2005-07-01 | Shinetsu Chemical Co | Epoxy/silicone mixed resin composition and light-emitting semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
US20080021136A1 (en) | 2008-01-24 |
KR100988590B1 (ko) | 2010-10-18 |
TW200813162A (en) | 2008-03-16 |
US7807736B2 (en) | 2010-10-05 |
EP1889877A1 (en) | 2008-02-20 |
JP4636275B2 (ja) | 2011-02-23 |
KR20080008286A (ko) | 2008-01-23 |
JP2008027966A (ja) | 2008-02-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI421304B (zh) | 經聚矽氧烷樹脂組成物包覆的半導體裝置以及用於包覆半導體裝置之聚矽氧烷樹脂錠 | |
EP1878768B1 (en) | Curable silicone rubber compositions and cured product thereof | |
KR101722089B1 (ko) | 경화성 오가노폴리실록산 조성물 및 광반도체 장치 | |
KR101722123B1 (ko) | 경화성 오가노폴리실록산 조성물 및 광반도체 장치 | |
JP4636242B2 (ja) | 光半導体素子封止材及び光半導体素子 | |
JP5392805B2 (ja) | 硬化性オルガノポリシロキサン樹脂組成物および光学部材 | |
KR101836962B1 (ko) | 신규 유기 규소 화합물, 상기 유기 규소 화합물을 포함하는 열경화성 수지 조성물, 경화 수지 및 광 반도체용 봉지 재료 | |
KR101772376B1 (ko) | 유기폴리실록산, 경화성 실리콘 조성물, 이의 경화물, 및 광반도체 장치 | |
KR20140035435A (ko) | 이소시아눌 골격, 에폭시기 및 SiH기를 가지는 오르가노 폴리실록산 또는 실세스퀴옥산 골격을 포함하는 화합물 및 상기 화합물을 밀착 부여재로서 포함하는 열경화성 수지 조성물, 경화물, 및 광 반도체용 봉지재 | |
JP2008019422A (ja) | エポキシ・シリコーン混成樹脂組成物及び発光半導体装置 | |
KR101560042B1 (ko) | 경화성 조성물 | |
JP2014520946A (ja) | 硬化性組成物 | |
EP3587498B1 (en) | Curable organopolysiloxane composition and semiconductor device | |
KR101875382B1 (ko) | 경화성 실리콘 조성물, 이의 경화물, 및 광반도체 장치 | |
JP4844732B2 (ja) | 発光半導体装置 | |
KR20150104110A (ko) | 부가 경화형 실리콘 조성물, 광학소자 봉지재 및 광학소자 | |
TWI644986B (zh) | 硬化性樹脂組成物 | |
EP2960296B1 (en) | Curable composition | |
EP2960295B1 (en) | Curable composition | |
KR101591185B1 (ko) | 경화성 조성물 | |
JPWO2019026755A1 (ja) | 硬化性シリコーン組成物、および光半導体装置 | |
KR101418013B1 (ko) | 반응성 오르가노실록산, 이의 제조방법 및 이를 포함하는 경화성 실리콘 조성물 | |
KR20160049539A (ko) | 1액형 경화성 실리콘 조성물 및 광반도체 장치 |