TWI416139B - Semiconductor device, manufacturing method and test method for semiconductor device - Google Patents

Semiconductor device, manufacturing method and test method for semiconductor device Download PDF

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Publication number
TWI416139B
TWI416139B TW097115118A TW97115118A TWI416139B TW I416139 B TWI416139 B TW I416139B TW 097115118 A TW097115118 A TW 097115118A TW 97115118 A TW97115118 A TW 97115118A TW I416139 B TWI416139 B TW I416139B
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Taiwan
Prior art keywords
semiconductor device
test
semiconductor
circuit
memory
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Application number
TW097115118A
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English (en)
Chinese (zh)
Other versions
TW200907380A (en
Inventor
Kanya Hamada
Tasuke Tanaka
Akira Seito
Yoshiaki Nakajima
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Renesas Electronics Corp
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Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of TW200907380A publication Critical patent/TW200907380A/zh
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Publication of TWI416139B publication Critical patent/TWI416139B/zh

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317Testing of digital circuits
    • G01R31/3181Functional testing
    • G01R31/3183Generation of test inputs, e.g. test vectors, patterns or sequences
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
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    • H01ELECTRIC ELEMENTS
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    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
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    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
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    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
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    • H01L23/00Details of semiconductor or other solid state devices
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    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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    • H01L23/3128Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657Stacked arrangements of devices
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
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    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
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    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1532Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/1533Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate
    • H01L2924/15331Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate being a ball array, e.g. BGA
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress
    • H01L2924/3511Warping

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Tests Of Electronic Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW097115118A 2007-06-06 2008-04-24 Semiconductor device, manufacturing method and test method for semiconductor device TWI416139B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007150905 2007-06-06
JP2008024701A JP5165404B2 (ja) 2007-06-06 2008-02-05 半導体装置と半導体装置の製造方法及びテスト方法

Publications (2)

Publication Number Publication Date
TW200907380A TW200907380A (en) 2009-02-16
TWI416139B true TWI416139B (zh) 2013-11-21

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Application Number Title Priority Date Filing Date
TW097115118A TWI416139B (zh) 2007-06-06 2008-04-24 Semiconductor device, manufacturing method and test method for semiconductor device

Country Status (4)

Country Link
JP (1) JP5165404B2 (ko)
KR (1) KR101489509B1 (ko)
CN (1) CN101504923B (ko)
TW (1) TWI416139B (ko)

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JP5127737B2 (ja) 2009-02-04 2013-01-23 株式会社東芝 半導体装置
JP5565024B2 (ja) * 2010-03-25 2014-08-06 株式会社デンソー システムインパッケージ
JP5218999B2 (ja) * 2010-12-03 2013-06-26 Necアクセステクニカ株式会社 半導体試験システム及び半導体装置の試験方法
KR101903520B1 (ko) * 2012-01-06 2018-10-04 에스케이하이닉스 주식회사 반도체 장치
JP5986474B2 (ja) * 2012-09-28 2016-09-06 株式会社東芝 メモリ故障診断装置、メモリ故障診断方法
CN102982647B (zh) * 2012-12-06 2016-03-30 无锡华润矽科微电子有限公司 一种感烟报警装置的控制芯片设计的布线方法
CN104979017B (zh) * 2014-04-03 2020-10-27 皇虎科技(加拿大)有限公司 用于测试及组装存储器模块的系统及方法
KR20160091508A (ko) 2015-01-23 2016-08-03 에스케이하이닉스 주식회사 테스트 모드 회로 및 이를 포함하는 반도체 장치
WO2017136305A1 (en) * 2016-02-01 2017-08-10 Octavo Systems Llc Systems and methods for manufacturing electronic devices
JP2018041217A (ja) * 2016-09-06 2018-03-15 東京エレクトロン株式会社 異常検知方法及び半導体製造装置
US10163763B1 (en) * 2017-06-23 2018-12-25 Infineon Technologies Ag Integrated circuit package with multi-die communication
CN109147860B (zh) * 2017-06-27 2020-11-17 华邦电子股份有限公司 存储器存储装置及其测试方法
KR20190087893A (ko) 2018-01-17 2019-07-25 삼성전자주식회사 클럭을 공유하는 반도체 패키지 및 전자 시스템
KR102577602B1 (ko) * 2018-03-13 2023-09-12 삼성전자주식회사 메모리 장치용 테스트 챔버, 이를 갖는 메모리 장치용 테스트 시스템 및 이를 이용한 메모리 장치의 테스트 방법
CN109087684B (zh) * 2018-10-16 2023-09-12 长鑫存储技术有限公司 数据通道老化电路、存储器及其老化方法
TWI827809B (zh) * 2019-04-04 2024-01-01 丹麥商卡普雷斯股份有限公司 測量測試樣本之電性的方法,以及多層測試樣本
JP7324155B2 (ja) * 2020-01-27 2023-08-09 ルネサスエレクトロニクス株式会社 半導体装置
TWI800008B (zh) * 2021-09-24 2023-04-21 英業達股份有限公司 測試非揮發性記憶體儲存裝置背板之系統及方法
KR102687987B1 (ko) * 2022-01-11 2024-07-25 에스케이엔펄스 주식회사 전자부품 테스트용 테스트보드

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