TWI414820B - 用於多狀態干涉光調變之方法及裝置 - Google Patents

用於多狀態干涉光調變之方法及裝置 Download PDF

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TWI414820B
TWI414820B TW094128428A TW94128428A TWI414820B TW I414820 B TWI414820 B TW I414820B TW 094128428 A TW094128428 A TW 094128428A TW 94128428 A TW94128428 A TW 94128428A TW I414820 B TWI414820 B TW I414820B
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electrode
reflector
modulation device
light
driving position
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TW200624858A (en
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William J Cummings
Brian J Gally
Clarence Chui
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Qualcomm Mems Technologies Inc
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making

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  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Micromachines (AREA)

Description

用於多狀態干涉光調變之方法及裝置
本發明之技術領域係關於微機電系統(MEMS)。
微機電系統(MEMS)包括微機械元件、致動器及電子設備。微機械元件可採用沉積、蝕刻及/或其它蝕刻掉基板及/或所沉積材料層之若干部分或添加若干層以形成電氣及機電裝置之微機械加工方法製成。一種類型之MEMS裝置稱為干涉調變器。干涉調變器可包含一對導電板，該對導電板中之一或二塊板全部或部分為透明及/或具反射性，且當施加適當電訊號時能夠相對移動。一塊板可包含一沉積在基板上之靜止層，而另一塊板可包含一與該靜止層隔開一氣隙之金屬膜。該等裝置具有廣泛的應用範圍，且在此項技術中利用及/或修正這些類型之裝置的特性以使其特徵可用於改良既有產品及製造目前尚未開發之新產品將頗為有益。
本發明之系統、方法及裝置各自具有多個態樣，任一單個態樣均不能單獨決定其所要屬性。現將對其較突出之特徵作簡要說明，此並不限制本發明之範圍。在考慮此論述後，尤其是在閱讀了題為"實施方式"之部分後，即可理解本發明之特徵如何提供優於其它顯示裝置之優點。
一實施例提供一種光調變器，其包含第一反射體、距該第一反射體一段距離安置之第一電極、及安置在該第一反射體與該第一電極之間的第二反射體，該第二反射體可在非驅動位置、第一驅動位置及第二驅動位置之間移動，其中第一驅動位置比非驅動位置更靠近第一反射體，且其中第二驅動位置比非驅動位置距離第一反射體更遠。
另一實施例提供一種光調變裝置，其包含：用於反射光之第一構件；用於反射光之第二構件，該第二反射構件經組態以安置在非驅動位置、及非驅動位置之第一與第二側中之任一位置；及安置構件，其用於將該第二反射構件安置在非驅動位置、非驅動位置之第一側上之第一位置及非驅動位置之第二側上之第二位置中之一個位置。
又一實施例提供一種驅動MEMS裝置之方法，該MEMS裝置包含第一電極、第二電極及一安置於該第一電極與該第二電極之間且經組態以在至少三個位置之間移動之可移動電極，該方法包括：在該第一電極與該可移動電極之間施加第一電壓電位差以朝向該第一電極驅動該可移動電極，其中在該可移動電極與該第一電極之間產生第一吸引力；並在該第一電極與該可移動電極之間施加第二電壓電位差，且在該第二電極與該可移動電極之間施加第三電壓電位差，以離開該第一電極並朝向該第二電極驅動該可移動電極，其中施加該第二電壓電位差在該可移動電極與該第一電極之間產生第二吸引力，且施加該第三電壓電位差在該可移動電極與該第二電極之間產生第三吸引力，且其中該第三吸引力大於該第二吸引力。
另一實施例提供一種製造一多狀態光調變器之方法，該方法包括：形成一第一反射體，形成一距該第一反射體一段距離安置之第一電極，且形成一安置在該第一反射體與該第一電極之間的第二反射體，該第二反射體可在一非驅動位置、一第一驅動位置及一第二驅動位置之間移動，其中該第一驅動位置比該非驅動位置更靠近該第一反射體，且其中該第二驅動位置比該非驅動位置距離該第一反射體更遠。
一干涉調變器具有一可在三個位置之間移動的反射體。在調變器之非驅動狀態，可移動鏡處於非驅動位置。在調變器之第一驅動狀態，可移動鏡朝向固定鏡偏移到比非驅動位置更靠近固定鏡之第一驅動位置。在調變器之第二驅動狀態，可移動鏡離開固定鏡偏移到比非驅動位置距離固定鏡更遠之第二驅動位置。在一實施例中，當可移動鏡處於非驅動位置時，調變器為非反射，例如為黑色，當可移動鏡處於第一驅動位置時，調變器反射白光，而當可移動鏡處於第二驅動位置時，調變器反射選定顏色之光。因此，包括此等調變器之彩色顯示器反射相對強烈之白光，同時具有較大色域。
以下詳細說明涉及本發明之某些特定實施例。然而，本發明可藉由許多不同方式實施。在本說明中，將參照附圖，在附圖中，類似部件自始至終使用類似數字標識。自以下說明容易看出，本發明可在任一經組態以顯示影像(無論是動態影像(例如視訊)還是靜態影像(例如靜止影像)，也無論是本文影像還是圖片影像)之裝置中實施。更具體而言，設想本發明可在例如(但不限於)以下多種電子裝置中實施或與該等電子裝置相關聯：行動電話、無線裝置、個人資料助理(PDA)、掌上型電腦或攜帶式電腦、GPS接收器/導航器、相機、MP3播放器、攝影機(camcorder)、遊戲控制臺、手錶、時鐘、計算器、電視螢幕、平板顯示器、電腦螢幕、汽車顯示器(例如，里程表顯示器等)、駕駛艙控制器及/或顯示器、相機視圖顯示器(例如，車輛後視相機顯示器)、電子照片、電子告示牌或標牌、投影儀、建築結構、包裝、及美學結構(例如，一件珠寶之影像顯示器)。具有類似於本文所描述之裝置之結構的MEMS裝置亦可用於非顯示應用，例如電子切換裝置。
圖1中說明一包含一干涉MEMS顯示元件之干涉調變器顯示器實施例。在此等裝置中，像素處於亮狀態或暗狀態。在處於亮("開(on)"或"打開(open)")狀態時，顯示元件將入射可見光之大部分反射給使用者。在處於暗("關(off)"或"關閉(closed)")狀態時，顯示元件幾乎不向使用者反射入射可見光。視實施例而定，可顛倒"開"及"關"狀態之光反射性質。MEMS像素可經組態以主要在選定顏色下反射，從而除了黑色及白色之外還可實現彩色顯示。
圖1為一等角視圖，其描繪一視覺顯示器之一系列像素中之兩個相鄰像素，其中每一像素均包含一MEMS干涉調變器。在某些實施例中，一干涉調變器顯示器包含一由該等干涉調變器組成之列/行陣列。每一干涉調變器均包括一對反射層，該對反射層安置成彼此相距一段可變且可控之距離，以形成一具有至少一可變尺寸之光學諧振腔。在一實施例中，其中一個反射層可在兩個位置之間移動。在本文稱作釋放狀態之第一位置中，可移動層之位置距離一固定之部分反射層相對較遠。在第二位置中，可移動層之位置更近地靠近該部分反射層。視可移動反射層之位置而定，自該等兩個層反射之入射光會以相長或相消方式干涉，從而形成各像素之總體反射或非反射狀態。
圖1中所描繪之像素陣列部分包括兩個相鄰之干涉調變器12a及12b。在左側之干涉調變器12a中，顯示一可移動之高度反射層14a處於一釋放位置，該釋放位置距一固定之部分反射層16a一預定距離。在右側之干涉調變器12b中，顯示可移動之高度反射層14b處於一觸發位置，該觸發位置靠近固定之部分反射層16b。
固定層16a、16b可導電、部分透明且具部分反射性，並可藉由(例如)在一透明基板20上沉積一或多個各自為鉻及氧化銦錫之層而製成。該各層圖案化成平行條帶，且可形成一顯示裝置中之列電極，下文中將對此進一步說明。可移動層14a、14b可形成為由沉積在柱18頂部上之一或多個沉積金屬層(與列電極16a、16b正交)及一沉積在柱18之間的中間犧牲材料構成之一系列平行條帶。在蝕刻掉犧牲材料後，該等可變形之金屬層與固定之金屬層藉由一界定之氣隙19隔開。該等可變形層可使用具有高度導電性及反射性之材料(例如鋁)，且該等條帶可形成一顯示裝置中之行電極。
在未施加電壓時，空腔19保持位於層14a、16a之間，且可變形層處於如圖1中像素12a所示之機械弛豫狀態。然而，在向一選定列及行施加電位差時，在該等列及行電極相交處之對應像素處形成之電容器變成充電狀態，且靜電力將該等電極拉向一起。若電壓足夠高，則可移動層發生形變，並被壓到固定層上(可在固定層上沉積一介電材料(在該圖中未示出)，以防止短路，並控制分隔距離)，如圖1中右側上之像素12b所示。無論所施加之電位差之極性如何，該行為均相同。以此方式，可控制反射相對於非反射像素狀態之列/行觸發與習知之LCD及其他顯示技術中所用之列/行觸發在許多方面相似。
圖2至圖5B說明在顯示器應用中使用一干涉調變器陣列之一例示性方法及系統。圖2為一系統方塊圖，其說明一可併入本發明之若干態樣之電子裝置的一實施例。在該例示性實施例中，該電子裝置包括處理器21，其可為任何通用單晶片或多晶片微處理器，例如ARM、Pentium、Pentium II、Pentium III、Pentium IV、PentiumPro、8051、MIPS、Power PC、ALPHA，或任何專用微處理器，例如數位訊號處理器、微控制器或可程式化閘極陣列。此項技術內習知，可將處理器21組態成用於執行一或多個軟體模組。除執行一作業系統外，還可將該處理器組態成用於執行一或多個軟體應用程式，包括網路瀏覽器、電話應用程式、電子郵件程式或任何其它軟體應用程式。
在一實施例中，處理器21還組態成與一陣列控制器22進行通信。在一實施例中，陣列控制器22包括向像素陣列30提供訊號之列驅動電路24及行驅動電路26。圖1中所示陣列之橫截面在圖2中以線1－1示出。對於MEMS干涉調變器，列/行觸發協定可利用圖3所示之該等裝置之滯後性質。其可能需要(例如)10伏特之電位差來使一可移動層從釋放狀態變形至觸發狀態。然而，當電壓從該值降低時，隨著電壓降回至低於10伏特，該可移動層維持其狀態不變。在圖3之例示性實施例中，該可移動層直至該電壓降低到2伏特以下才完全釋放。因此，在圖3所示之實例中，存在約3－7 V之電壓範圍，在該電壓範圍內存在一施加電壓窗口，在該窗口內該裝置在釋放或觸發狀態下保持穩定。本文將其稱作"滯後窗口"或"穩定窗口"。對於具有圖3之滯後特性之顯示陣列而言，列/行觸發協定可設計成使得在列選通期間，使選通列中待觸發之像素受到約10伏特之電壓差，並使待釋放之像素受到接近0伏特之電壓差。在選通之後，使像素受到約5伏特之穩態電壓差，以使其保持在列選通使其所處之狀態。在寫入之後，在該實例中，每一像素均經歷在3－7伏特之"穩定窗口"內之電位差。該特性使圖1所示之像素設計在相同之施加電壓條件下穩定在一既有之觸發狀態或釋放狀態。由於無論是處於觸發狀態還是釋放狀態，干涉調變器之每一像素基本上均為一由固定及移動反射層形成之電容器，所以該穩定狀態可在滯後窗口內之電壓下得以保持而幾乎無功率消耗。若所施加之電位固定，則基本上沒有電流流入像素。
在通常應用中，可藉由根據第一列中所要之一組觸發像素確定一組行電極而形成一顯示圖框。此後，將列脈衝施加於列1之電極，從而觸發與所確定之行線對應之像素。此後，將所確定之一組行電極變成與第二列中所要之一組觸發像素對應。此後，將脈衝施加於列2之電極，從而根據所確定之行電極來觸發列2中之適當像素。列1之像素不受列2之脈衝之影響，且保持在其在列1之脈衝期間所設定之狀態。可按依序方式對整個系列之列重複此過程，以形成圖框。通常，藉由以某一所要圖框數/秒之速率連續重複此過程來用新顯示資料刷新及/或更新該等圖框。還有很多種用於驅動像素陣列之列及行電極以形成顯示圖框之協定為人們所熟知，且可用於本發明。
圖4、圖5A及圖5B說明用於在圖2所示之3×3陣列上形成一顯示圖框之一個可能的觸發協定。圖4顯示可用於彼等展現出圖3之滯後曲線之像素的一組可能之行及列電壓位準。在圖4所示之實施例中，觸發一像素包括將適當之行設定至－Vb i a s ，並將適當之列設定至＋△V，其可分別對應用於－5伏特及＋5伏特。釋放像素則是藉由將適當之行設定至＋Vb i a s 並將適當之列設定至相同之＋△V以在像素兩端形成零伏特之電位差來實現。在彼等列電壓保持在0伏特之列中，像素穩定在其原先所處之狀態，而與該行是處於＋Vb i a s 還是－Vb i a s 無關。圖4中還說明，應瞭解，可使用與上述電壓相反極性之電壓，例如觸發像素可包括將適當行設定至＋Vb i a s ，並將適當之列設定至－△V。在此實施例中，釋放像素是藉由將適當行設定至－Vb i a s 並將適當列設定至相同之－△V以在像素兩端形成零伏特之電位差來實現。
圖5B為顯示一系列施加至圖2所示之3×3陣列之列及行訊號之時序圖，其將形成圖5A所示之顯示配置，其中觸發像素為非反射性。在寫入圖5A所示之圖框之前，像素可處於任何狀態，且在該實例中，所有列均處於0伏特，且所有行均處於＋5伏特。藉由該等所施加之電壓，所有像素均穩定於其既有之觸發狀態或釋放狀態。
在圖5A所示之圖框中，像素(1,1)、(1,2)、(2,2)、(3,2)及(3,3)受到觸發。為實現此，在列1之"線時間"期間，將行1及行2設定為－5伏特，且將行3設定為＋5伏特。此不會改變任何像素之狀態，因為所有像素均保持處於3－7伏特之穩定窗口內。此後，藉由一自0伏特上升至5伏特然後又下降回至0伏特之脈衝來選通列1。由此觸發像素(1,1)及(1,2)，並釋放像素(1,3)。陣列中之其它像素均不受影響。為將列2設定為所要狀態，將行2設定為－5伏特，且將行1及行3設定為＋5伏特。此後，向列2施加相同之選通脈衝將觸發像素(2,2)並釋放像素(2,1)及(2,3)。同樣，陣列中之其它像素均不受影響。類似地，藉由將行2及行3設定為－5伏特並將行1設定為＋5伏特而對列3進行設定。列3之選通脈衝將列3之像素設定為如圖5A所示之狀態。在寫入圖框之後，列電位為0，而行電位可保持在＋5或－5伏特，且此後顯示器將穩定於圖5A所示之配置。應瞭解，可對由數打或數百個列及行構成之陣列使用相同之程序。亦應瞭解，用於執行列觸發及行觸發之電壓之定時、序列及位準可在上述之一般原理內變化很大，且上述實例僅為例示性，且任何觸發電壓方法均可用於本發明。
按照上述原理運作之干涉調變器之詳細結構可有很大不同。例如，圖6A－6C說明移動鏡結構之三個不同實施例。圖6A為圖1所示實施例之橫截面圖，其中一金屬材料條帶14沉積於正交延伸之支撐件18上。在圖6B中，可移動反射材料14僅在拐角處在系鏈32上附著至支撐件。在圖6C中，可移動反射材料14懸吊在可變形層34之下方。因為可相對於光學特性最適化反射材料14之結構設計及所用材料，且可相對於所要之機械特性最適化可變形層34之結構設計及所用材料，所以該實施例具有多個優點。在許多公開文獻中，包括(例如)美國公開申請案第2004/0051929號中，描述了各種不同類型之干涉裝置之製造。多種熟知技術可用於製造上述結構，此包括一系列材料沉積、圖案化及蝕刻步驟。
上述干涉調變器之實施例以反射狀態(其產生白光、或由鏡14與16之間的距離決定之彩色光)或非反射(例如，黑色)狀態中之一種狀態運作。在其它實施例中，例如在美國專利第5,986,796號中所揭示之實施例中，可移動鏡14可相對於固定鏡16安置於一定的位置範圍內，以改變諧振間隙19之尺寸，並因此改變反射光之顏色。
圖7為一例示性干涉調變器12之側視橫截面圖，其說明藉由將可移動鏡14安置在位置範圍111－115上所產生之光的光譜特性。如上所述，列與行電極之間的電位差會使可移動鏡14發生偏移。該例示性調變器包括一充當行電極之氧化銦錫(ITO)導電層102。在該例示性調變器中，鏡14包括列導體。
在一實施例中，諸如氧化鋁(Al2 O3 )之材料之介電層104安置在形成鏡16之反射表面之鉻層上。如以上參考圖1所述，當鏡14偏移時，介電層104防止短路並控制鏡14與16之間的間距。因此，在鏡14與16之間形成之光學空腔包括介電層104。已基於方便說明調變器12之目的選擇圖7中之各項的相對尺寸。因此，該等距離不成比例，且並非意欲表示調變器12之任何特定實施例。
圖8為數個例示性光學堆(optical stack)之鏡16的反射率相對於波長之圖解說明。水平軸表示入射於該光學堆上之可見光之波長範圍。垂直軸表示作為特定波長下之入射光之百分比的光學堆之反射率。在一其中光學堆不包括介電層104之實施例中，由一鉻層形成之鏡16之反射率為約75%。包括一包含100氧化鋁層之介電層104之光學堆產生65%之反射率，且包含200氧化鋁層之介電層104產生55%之反射率。如圖所示，在該等特定實施例中，反射率不會隨波長而變化。因此，藉由調整Al2 O3 層之厚度，可在可見光譜上一致地控制鏡16之反射率，以選擇干涉調變器12之特定特性。在某些實施例中，介電層104為一厚度在50－250範圍內之Al2 O3 層。在其它實施例中，介電層104包含一厚度在50－100範圍內之Al2 O3 薄層及一厚度在400－2000範圍內之體SiO2 層。
如上所述，調變器12包括一在鏡14與16之間形成之光學空腔。該光學空腔之特徵距離或有效光徑長度L決定該光學空腔之諧振波長λ並因此決定干涉調變器12之諧振波長λ。干涉調變器12之諧振波長λ一般對應於由調變器12所反射之光的感知顏色。在數學上，距離L＝N λ，其中N為整數。因此，一給定之諧振波長λ由距離L為λ(N＝1)、λ(N＝2)、3/2 λ(N＝3)等之干涉調變器12來反射。整數N可稱作反射光之干涉級數。如本文中所使用，當鏡14處於至少一位置時，調變器12之級數亦指由調變器12所反射之光的級數N。例如，第一級紅色干涉調變器12之距離L可為約325 nm，其對應於約650 nm之波長λ。相應地，第二級紅色干涉調變器12之距離L可為約650 nm。一般而言，調變器12之級數愈高，其反射愈窄波長範圍內之光，並因此產生更飽和之彩色光。
注意，在某些實施例中，距離L實質上等於鏡14與16之間的距離。當鏡14與16之間的空間僅包含具有約等於1之折射率的氣體(例如，空氣)時，有效光徑長度實質上等於鏡14與16之間的距離。在包括具有大於1之折射率的介電層104之實施例中，藉由選擇鏡14與16之間的距離並選擇在鏡14與16之間的介電層104或任何其它層之厚度及折射率來形成具有所要光徑長度之光學空腔。在一實施例中，鏡14可偏移至在一定位置範圍內之一或多個位置以輸出對應範圍內之顏色。例如，可調整列與行電極之間的電壓電位差以使鏡14相對於鏡16偏移至一定位置範圍內之一位置。通常，藉由調整電壓控制鏡位置之最大程度接近鏡14之路徑之非偏移位置(例如，對於較小之偏移而言，如在距鏡14之非偏移位置之最大偏移的約1/3內之偏移)。
在圖7中，藉由一條自固定鏡16延伸至指示位置111－115之箭頭尖端之線來表示可移動鏡14之一組特定位置111－115中之各位置。因此，選擇距離111－115以計算介電層104之厚度及折射率。當可移動鏡14偏移至位置111－115中之各個位置(每個位置對應於不同距離L)時，調變器將光輸出至觀察位置101，其中不同之光譜響應對應於由調變器12所發射之入射光之不同顏色。此外，在位置111，可移動鏡14足夠靠近固定鏡16，以使干涉效果可忽略不計，且調變器12充當反射實質上所有顏色之入射可見光(例如，白光)之鏡。因為對於可見頻帶內之光學諧振而言該小距離L太小，所以導致寬頻帶鏡效應。因此，鏡14僅充當相對於可見光之反射表面。
當間隙增大至位置112時，因為在鏡14與16之間的增大之間隙距離降低了鏡14之反射率，所以調變器12展現出灰色調。在位置113，因為諧振波長在可見範圍之外，所以距離L使得該空腔以干涉方式運作但基本上不反射可見波長之光。
隨著距離L進一步增大，調變器12之峰值光譜響應移動至可見波長內。因此，當可移動鏡14處於位置114時，調變器12反射藍光。當可移動鏡14處於位置115時，調變器12反射綠光。當可移動鏡14處於非偏移位置116時，調變器12反射紅光。
在設計使用干涉調變器12之顯示器時，可形成調變器12以增加反射光之顏色飽和度。飽和度係指彩色光之色相強度。高飽和色相具有鮮明且強烈之顏色，而低飽和色相顯得較柔及且灰暗。例如，產生極窄範圍波長之雷射產生高飽和光。相比之下，一般的白熾燈泡產生可具有飽和度減小之紅色或藍色之白光。在一實施例中，使得所形成之調變器12之距離L對應於更高干涉級(例如，2級或3級)，以增加反射彩色光之飽和度。
一例示性彩色顯示器包括紅色、綠色及藍色顯示元件。藉由改變由該等紅色、綠色及藍色元件所產生之光的相對強度來在此顯示器中產生其它顏色。諸如紅色、綠色及藍色之原色混合可由人眼感知為其它顏色。在此顏色系統中之紅色、綠色及藍色之相對值可稱作有關激勵人眼之紅、綠及藍光敏感部分之三色激勵值。一般而言，原色愈飽和，顯示器可產生之顏色範圍愈大。在其它實施例中，顯示器可包括具有根據不同於紅色、綠色及藍色之幾組原色界定其它顏色系統之幾組顏色的調變器12。
圖9為說明可由包括兩組例示性紅色、綠色及藍色干涉調變器之彩色顯示器來產生之顏色的色度圖。水平軸及垂直軸界定一色度座標系統，可在該系統上描繪光譜三色激勵值。具體而言，點120說明由例示性紅色、綠色及藍色干涉調變器反射之光的顏色。點122表示白光。自各點120至白光之點122之距離(例如，在白光之點122與綠光之點120之間的距離124)指示由對應調變器12所產生之光的飽和度。由三角形跡線126包圍之區域對應於可藉由混合在點120處所產生之光來產生之顏色範圍。此顏色範圍可稱作顯示器之色域。
點128指示另一組例示性調變器12之光譜響應。點128與白點122之間的距離小於點120與點122之間的距離指示，對應於點128之調變器12所產生之光的飽和度小於對應於點120之調變器12所產生之光的飽和度。跡線130指示可藉由混合點128之光產生之顏色範圍。如圖9所示，跡線126所包圍之面積大於跡線130所包圍之面積，從而以圖解方式說明在顯示元件之飽和度與顯示器之色域大小之間的關係。
在反射式顯示器中，使用此等飽和干涉調變器所產生之白光對於觀察者而言往往具有相對較低之強度，因為僅反射小範圍之入射波長來形成白光。相比之下，反射寬頻帶白光(例如，實質上所有入射波長)之鏡具有更大之強度，因為其反射更大範圍之入射波長。因此，使用原色組合來產生白光以設計反射式顯示器通常導致顯示器所輸出之白光的顏色飽和度及色域與亮度之間的折損。
圖10為一例示性多狀態干涉調變器140之側視橫截面圖，該干涉調變器140可在一種狀態下產生高飽和之彩色光，並在另一種狀態下產生相對較強之白光。因此，該例示性調變器140將輸出白光之顏色飽和度與亮度去耦。該調變器140包括一安置在兩個電極102與142之間的可移動鏡14。該調變器140亦包括第二組柱18a，該等柱18a形成於鏡14之與柱18相對之一側上。
在某些實施例中，各鏡14及16可為界定反射體或反射部件之用於執行不同於反射光之功能之疊層的一部分。例如，在圖10之例示性調變器中，鏡14由一或多個導電反射材料(例如鋁)層形成。因此，鏡14亦可充當導體。同樣，鏡16可由一或多個反射材料層及一或多個導電材料層形成以執行電極102之功能。此外，各鏡14及16亦可包括一或多個具有其它功能之層，以(例如)控制影響鏡14偏移之機械特性。在一實施例中，可移動鏡14懸吊在一額外可變形層之下方，如結合圖6C所述。
在一包括反射紅光、綠光及藍光之調變器之實施例中，反射不同顏色之調變器使用不同的反射材料，以改良該等調變器12之光譜響應。例如，在經組態以反射紅光之調變器12中，可移動鏡14可包括金。
在一實施例中，介電層144可位於導體142之任一側上。介電層144a及104有利地防止在鏡14之導電部分與調變器140之其它部分之間的電短路。在一實施例中，鏡16及電極102共同形成一反射部件。
在該例示性實施例中，在可移動鏡14處於非驅動位置時，固定鏡16與可移動鏡14之間的距離對應於調變器140為非反射或"黑色"時之光徑長度L。在該例示性實施例中，在朝向固定鏡16驅動可移動鏡14時，固定鏡16與可移動鏡14之間的距離對應於調變器140反射白光時之光徑長度L。在該例示性實施例中，在朝向導體142驅動可移動鏡14時，固定鏡16與可移動鏡14之間的距離對應於調變器140反射諸如紅色、藍色或綠色之彩色光時之光徑長度L。在某些實施例中，非驅動可移動鏡14與固定鏡16之間的距離實質上等於在非驅動可移動鏡14與電極142之間的距離。該等實施例可視為是圍繞單一可移動鏡14安置之兩個調變器。
當在鏡14與電極102之間施加第一電壓電位差時，鏡14朝向鏡16偏移以界定對應於第一驅動狀態之第一光徑長度L。在該第一驅動狀態下，可移動鏡14比在非驅動狀態下更靠近鏡16。當在鏡14與電極142之間施加第二電壓電位差時，鏡14離開鏡16偏移以界定對應於第二驅動狀態之第二光徑長度L。在該第二驅動狀態下，可移動鏡14比在非驅動狀態下距離鏡16更遠。在某些實施例中，藉由在鏡14與電極102之間及在鏡14與電極142之間施加電壓電位差來達成第一驅動狀態及第二驅動狀態中之至少一狀態。在某些實施例中，選擇第二電壓差以提供鏡14之所要偏移。
如圖10所示，在第一驅動狀態下，鏡14偏移至由虛線152所指示之位置。在該例示性調變器140中，在第一驅動狀態下，鏡14與16之間的距離對應於介電層104之厚度。在該例示性調變器140中，鏡14在該位置充當寬頻帶鏡，從而實質上反射所有可見波長之光。因此，當藉由寬頻帶白光照射時，調變器140產生寬頻帶白光。
在第二驅動狀態下，鏡14偏移至由虛線154所指示之位置。在該例示性調變器140中，此距離對應於彩色光，例如藍光。在非驅動狀態下，鏡14如圖10所示安置。在非偏移位置，鏡14與鏡16間隔一定距離以使得實質上不反射可見光，例如為"關"或非反射狀態。因此，調變器140界定一具有至少三種離散狀態之干涉調變器。在其它實施例中，若需要，可選擇在該等三種狀態下之可移動鏡14之位置以產生不同組之顏色，包括黑色及白色。
在一實施例中，光穿過基板20進入調變器12並輸出至觀察位置141。在另一實施例中，顛倒圖10所示之疊層，其中層144而不是層102最靠近基板20。在某些此類實施例中，可穿過與基板20相對之疊層一側而不是穿過基板20觀察調變器12。在一此類實施例中，在ITO層102上形成一層二氧化矽以使ITO層102電絕緣。
如上文所提到的，具有一用於在調變器140中輸出白光之獨立狀態會使調變器控制顏色飽和度之特性選擇與影響白色輸出之亮度之特性去耦。因此，可選擇調變器140之距離及其它特性以提供高飽和顏色而不影響在第一狀態下所產生之白光。例如，在一例示性彩色顯示器中，可使所形成之紅色、綠色及藍色調變器12中之一或多個調變器12具有對應於較高干涉級之光徑長度L。
調變器140可使用此項技術中已知之光微影技術、且如以上參照調變器12所述來形成。例如，可藉由在實質上透明之基板20上沉積一或多個鉻層來形成固定鏡16。可藉由在基板20上沉積一或多層透明導體(例如ITO)來形成電極102。將該等導體層圖案化成平行條帶，且可形成多行電極。可移動鏡14可形成為由沉積在柱18頂部上之一或多個沉積金屬層(與該等行電極102正交)及沉積在柱18之間的中間犧牲材料構成之一系列平行條帶。可提供穿過上述一或多層之通路以使得蝕刻氣體(如二氟化氙)可抵達犧牲層。在蝕刻掉犧牲材料後，藉由一氣隙將可變形金屬層與固定層隔離開。可變形層可採用具有高導電性及反射性之材料，例如鋁，且該等條帶可在一顯示裝置中形成列電極。導體142可藉由以下方法形成：在可移動鏡14上沉積柱18a，在柱18a之間沉積中間犧牲材料，在柱18a之頂部上沉積一或多層導體(例如鋁)，並在犧牲材料上沉積一導電層。在蝕刻掉犧牲材料後，導電層可充當電極142，該電極142藉由第二氣隙與鏡14隔離開。每一氣隙提供一空腔，鏡14可在該空腔中移動以達成上述狀態中之每一狀態。
如圖10進一步所示，在例示性調變器140中，導電鏡14連接至陣列控制器22之列驅動器24。在例示性調變器140中，導體102及142連接至行驅動器26中之單獨行。在一實施例中，藉由根據參照圖3及4所描述之方法在鏡14與行導體102及142之間施加適當之電壓電位差來選擇調變器140之狀態。
圖11A－11C說明提供多於兩種狀態之另一例示性干涉調變器150。在例示性調變器150中，鏡16包括一反射層及一導電層以執行圖10中之電極102之功能。導電層142亦可受第二介電層144a之保護，並由藉由第二組支撐件18a在可移動鏡14上方保持某一距離之支撐表面148來支撐。
圖11A說明調變器150之非驅動狀態。如同圖10之調變器140，圖11A－11C之例示性調變器150之鏡14可朝向介電層104偏移(例如，向下)，如處於圖11B所示之驅動狀態，並可沿相反或相對方向(例如，向上)偏移，如圖11C所示。此"向上"偏移狀態可稱為"相反驅動狀態"。
熟習此項技術者將瞭解，此相反驅動狀態可以多種方法來達成。在一實施例中，相反驅動狀態係藉由使用可以靜電方式沿向上之方向拉動鏡16之額外充電板或導電層142來達成，如圖11C中所示。該例示性調變器150基本上包括兩個圍繞單個可移動鏡14對稱安置之干涉調變器。此組態允許鏡16之導電層及導電層142之每一層沿相對方向吸引鏡14。
在某些實施例中，額外導電層142可用作電極，以克服在鏡14緊密接近或接觸介電層104時可形成之靜態摩擦力(靜摩擦)。此等力可包括凡得瓦爾力或靜電力以及熟習此項技術者所瞭解之其它可能的力。在一實施例中，施加至鏡16之導電層的電壓脈衝可使可移動鏡14處於圖11B之"正常"驅動狀態。類似地，可將下一電壓脈衝施加至導電層142以吸引可移動鏡14使其離開鏡16。在某些實施例中，施加至導電層142之此類電壓脈衝可用於藉由朝向相反驅動狀態驅動可移動鏡14來加速可移動鏡14自圖11B所示之驅動狀態恢復回至圖11A所示之非驅動狀態。因此，在某些實施例中，調變器150僅可在兩個狀態下運作，即圖11A之非驅動狀態及圖11B之驅動狀態，並可使用導電層142作為電極以幫助克服靜態摩擦力。在一實施例中，每次當調變器150自圖11C之驅動位置改變至圖11A之非驅動位置時，即可如上所述驅動導電層142。
熟習此項技術者將瞭解，在每一實施例中並非需要所有該等元件。例如，若在此等實施例之操作中，向上偏移(例如，如圖11C所示)之精確相對量不相關，則導電層142可在距可移動鏡14之不同距離上安置。因此，可能不需要支撐元件18a、介電層144a或獨立之支撐表面148。在該等實施例中，重要的不一定是可移動鏡14向上偏移多遠，而是安置導電層142以在適當時間吸引鏡14，以(例如)扯開調變器12。在其它實施例中，如圖11C所示之可移動鏡14之位置可為干涉調變器產生改變之所需光學特性。在該等實施例中，可移動鏡14沿向上方向偏移之精確距離可與改良裝置之影像品質相關。
熟習此項技術者應瞭解，用於產生層142、144a及支撐表面148之材料不需要與用於產生對應層16、105及20之材料類似。例如，光不需要穿過層148。另外，若將導電層142安置在可移動鏡14處於向上變形位置時到達不了的位置上，則調變器150可不包括介電層144a。另外，施加至導電層142及可移動鏡14之電壓可基於以上不同而相應不同。
熟習此項技術者應瞭解，所施加用於將可移動鏡14自圖11B之驅動狀態驅動回至圖11A之非驅動狀態的電壓可不同於將可移動鏡14自圖11A之非驅動狀態驅動至圖11C之向上或相反驅動狀態所需之電壓，因為在該等兩個狀態下，導電層142與可移動鏡14之間的距離可不同。此等要求可視所要應用及偏移量而定，並可由熟習此項技術者在考慮本揭示後來確定。
在某些實施例中，在導電層142與可移動鏡14之間所施加之力的量或持續時間使得其僅增加干涉調變器在驅動狀態與非驅動狀態之間轉變之速率。由於可將可移動鏡14吸引至位於可移動鏡14之相對側上之導電層142或導電鏡16，因此可提供一極其短暫之驅動力來削弱可移動鏡14與相對層之交互作用。例如，當驅動可移動鏡14以使其與固定導電鏡16交互作用時，相對導電層142之能量脈衝可用於削弱可移動鏡14與固定鏡16之交互作用，從而使可移動鏡14更易於移動至非驅動狀態。
圖12A及圖12B為說明顯示裝置2040之一實施例的系統方塊圖。顯示裝置2040可為(例如)一蜂巢式電話或行動電話。然而，顯示裝置2040之相同組件或其輕微變體亦可說明不同類型之顯示裝置，例如電視及攜帶型媒體播放器。
顯示裝置2040包括一外殼2041、一顯示器2030、一天線2043、一揚聲器2045、一輸入裝置2048及一麥克風2046。外殼2041通常由熟習此項技術者所熟知之多種製造方法中之任一方法製成，包括射出成型及真空成形。另外，外殼2041可由許多種材料中之任何一種材料製成，包括(但不限於)塑料、金屬、玻璃、橡膠及陶瓷或其組合。在一實施例中，外殼2041包括可與其它具有不同顏色或包含不同標誌、圖片或符號之可移除部分互換之可移除部分(未示出)。
例示性顯示裝置2040之顯示器2030可為許多種顯示器中之任一顯示器，包括如本文所述之雙穩顯示器。在其它實施例中，如熟習此項技術者所熟知，顯示器2030包括：平板顯示器，例如上述電漿、EL、OLED、STN LCD或TFT LCD；或非平板顯示器，例如CRT或其它管式裝置。然而，基於說明本實施例之目的，顯示器2030包含如本文所述之干涉調變器顯示器。
在圖12B中示意性地說明例示性顯示裝置2040之一實施例之各組件。所示例示性顯示裝置2040包括一外殼2041，且可包括其它至少部分地封閉在外殼2041內之組件。例如，在一實施例中，例示性顯示裝置2040包括一網路介面2027，網路介面2027包括一耦接至收發器2047之天線2043。收發器2047連接至處理器2021，而處理器2021連接至調節硬體2052。調節硬體2052可組態成調節訊號(例如，對訊號進行濾波)。調節硬體2052連接至揚聲器2045及麥克風2046。處理器2021亦連接至輸入裝置2048及驅動器控制器2029。驅動器控制器2029耦接至圖框緩衝器2028及陣列驅動器2022，而陣列驅動器2022又耦接至顯示陣列2030。電源2050根據特定例示性顯示裝置2040之設計要求向所有組件供電。
網路介面2027包括天線2043及收發器2047，以使例示性顯示裝置2040可藉由網路與一或多個裝置通信。在一實施例中，網路介面2027還可具有某些處理功能，以降低對處理器2021之要求。天線2043為熟習此項技術者已知之任一種用於發射及接收訊號之天線。在一實施例中，天線根據IEEE 802.11標準(包括IEEE 802.11(a)、(b)或(g))發射及接收RF訊號。在另一實施例中，天線根據藍牙(BLUETOOTH)標準發射及接收RF訊號。倘若為蜂巢式電話，則將天線設計成接收CDMA、GSM、AMPS或其它用於在無線蜂巢式電話網路內進行通信之已知訊號。收發器2047預處理自天線2043接收之訊號，以使該等訊號可由處理器2021接收及進一步處理。收發器2047亦處理自處理器2021接收到之訊號，以便可藉由天線2043自例示性顯示裝置2040發射該等訊號。
在一替代實施例中，收發器2047可由一接收器替代。在另一替代實施例中，網路介面2027可由一可儲存或產生待發送至處理器2021之影像資料之影像源替代。例如，該影像源可為包含影像資料之數位影音光碟(DVD)或硬碟驅動器或為產生影像資料之軟體模組。
處理器2021通常控制例示性顯示裝置2040之整體運作。處理器2021自網路介面2027或影像源接收資料，例如經壓縮之影像資料，並將該資料處理成原始影像資料或一種易於處理成原始影像資料之格式。此後，處理器2021將處理後之資料發送至驅動器控制器2029或圖框緩衝器2028進行儲存。原始資料通常係指識別一影像內每一位置處之影像特性之資訊。例如，此等影像特性可包括顏色、飽和度及灰階。
在一實施例中，處理器2021包括微處理器、CPU或用於控制例示性顯示裝置2040之運作之邏輯單元。調節硬體2052通常包括用於向揚聲器2045傳輸訊號及自麥克風2046接收訊號之放大器及濾波器。調節硬體2052可為例示性顯示裝置2040內之離散組件，或者可併入處理器2021或其它組件內。
驅動器控制器2029直接自處理器2021或自圖框緩衝器2028接收由處理器2021所產生之原始影像資料，並將該原始影像資料適當地重新格式化，以高速傳輸至陣列驅動器2022。具體而言，驅動器控制器2029將原始影像資料重新格式化為一具有一光柵類格式之資料流，以使其具有一適用於掃描整個顯示陣列2030之時間次序。此後，驅動器控制器2029將格式化後之資訊發送至陣列驅動器2022。儘管驅動器控制器2029(例如LCD控制器)通常作為一獨立之積體電路(IC)與系統處理器2021相關聯，但此等控制器亦可按多種方式實施。其可作為硬體嵌入處理器2021中、作為軟體嵌入處理器2021中、或以硬體形式與陣列驅動器2022完全整合在一起。
通常，陣列驅動器2022自驅動器控制器2029接收格式化後之資訊，並將視訊資料重新格式化為一組平行波形，該組平行波形每秒多次施加至來自顯示器之x－y像素矩陣之數百條且有時為數千條引線。
在一實施例中，驅動器控制器2029、陣列驅動器2022及顯示陣列2030適用於本文所述之任何類型之顯示器。例如，在一實施例中，驅動器控制器2029為一習知顯示控制器或一雙穩顯示控制器(例如一干涉調變器控制器)。在另一實施例中，陣列驅動器2022為一習知驅動器或一雙穩顯示驅動器(例如一干涉調變器顯示器)。在一實施例中，驅動器控制器2029與陣列驅動器2022整合在一起。此一實施例在例如蜂巢式電話、手錶及其它小面積顯示器之高度整合之系統中很常見。在又一實施例中，顯示陣列2030為一典型顯示陣列或一雙穩顯示陣列(例如一包含一干涉調變器陣列之顯示器)。
輸入裝置2048使得使用者能夠控制例示性顯示裝置2040之運作。在一實施例中，輸入裝置2048包括小鍵盤(例如QWERTY鍵盤或電話小鍵盤)、按鈕、開關、觸敏顯示幕、壓敏或熱敏膜。在一實施例中，麥克風2046為例示性顯示裝置2040之輸入裝置。當使用麥克風2046向該裝置輸入資料時，可由使用者提供語音命令來控制例示性顯示裝置2040之運作。
電源2050可包括此項技術中眾所周知之各種能量儲存裝置。例如，在一實施例中，電源2050為可再充電之蓄電池，例如鎳－鎘蓄電池或鋰離子蓄電池。在另一實施例中，電源2050為可再生能源、電容器或太陽能電池，包括塑料太陽能電池及太陽能電池塗料。在另一實施例中，電源2050經組態以自牆上插座接收電力。
在某些實施方案中，控制可程式化性如上文所述駐存於一驅動器控制器中，該驅動器控制器可位於電子顯示系統中之數個位置上。在某些情形中，控制可程式化性駐存於陣列驅動器2022中。熟習此項技術者將瞭解，可以任意數目之硬體及/或軟體組件及不同之組態來實施上述優化。
儘管以上詳細描述顯示、描述及指出了適用於各實施例之本發明之新穎特徵，但應理解，熟習此項技術者可在不脫離本發明之精神的情形下對所示裝置或方法之形式及細節做出各種省略、替代或改變。將瞭解，本發明可以並未提供本文所述之所有特徵及益處之形式來體現，因為某些特徵可獨立於其它特徵來使用或實施。本發明之範圍應由隨附申請專利範圍而非以上描述來界定。所有落入申請專利範圍之均等物之意義及範圍內之改變都將包括在申請專利範圍內。
12a．．．干涉調變器
12b．．．干涉調變器
14．．．鏡
14a．．．可移動層
14b．．．可移動層
16．．．鏡
16a．．．固定層/列電極
16b．．．固定層/列電極
18．．．柱
18a．．．柱
19．．．氣隙/空腔
20．．．基板
21．．．處理器
22．．．陣列控制器
24．．．列驅動電路
26．．．行驅動電路
30．．．像素陣列
32．．．系鏈
34．．．可變形層
101．．．觀察位置
102．．．電極/ITO層/導體
104．．．介電層
111．．．位置
112．．．位置
113．．．位置
114．．．位置
115．．．位置
116．．．非偏移位置
120．．．點
122．．．點
124．．．距離
126．．．跡線
128．．．點
130．．．跡線
140．．．干涉調變器
141．．．觀察位置
142．．．電極/導體
144．．．介電層
144a．．．介電層
148．．．支撐表面
150．．．干涉調變器
2021．．．處理器
2022．．．陣列驅動器
2027．．．網路介面
2028．．．圖框緩衝器
2029．．．驅動器控制器
2030．．．顯示陣列/顯示器
2040．．．顯示裝置
2041．．．外殼
2043．．．天線
2045．．．揚聲器
2046．．．麥克風
2047．．．收發器
2048．．．輸入裝置
2050．．．電源
2052．．．調節硬體
圖1為一等角視圖，其描繪干涉調變器顯示器之一實施例之一部分，其中第一干涉調變器之可移動反射層處於釋放位置，且第二干涉調變器之可移動反射層處於觸發位置。
圖2為一系統方塊圖，其說明包含一3×3干涉調變器顯示器之電子裝置之一實施例。
圖3為圖1之干涉調變器之一例示性實施例之可移動鏡位置相對於施加電壓之圖。
圖4為可用於驅動一干涉調變器顯示器之一組列及行電壓之示意圖。
圖5A說明在圖2之3×3干涉調變器顯示器中之一例示性顯示資料圖框。
圖5B說明可用於寫入圖5A之圖框之列及行訊號之一例示性時序圖。
圖6A為圖1之裝置之橫截面圖。
圖6B為干涉調變器之一替代實施例之橫截面圖。
圖6C為干涉調變器之另一替代實施例之橫截面圖。
圖7為說明所產生之光的光譜特性之一例示性干涉調變器之側視橫截面圖。
圖8為數個例示性干涉調變器之鏡的反射率相對於波長之圖解說明。
圖9為一色度圖，其說明可由一包括幾組例示性紅色、綠色及藍色干涉調變器之彩色顯示器產生之顏色。
圖10為一例示性多狀態干涉調變器之側視橫截面圖。
圖11A－11C為另一例示性多狀態干涉調變器之側視橫截面圖。
圖12A及12B為系統方塊圖，其說明包含複數個干涉調變器之視覺顯示裝置之一實施例。
14．．．鏡
16．．．鏡
18．．．柱
18a．．．柱
20．．．基板
22．．．陣列控制器
24．．．列驅動電路
26．．．行驅動電路
102．．．電極/ITO層/導體
104．．．介電層
140．．．干涉調變器
141．．．觀察位置
142．．．電極/導體
144．．．介電層
144a．．．介電層

Claims (39)

  1. 一種光調變裝置，其包含：一第一反射體；一安置於距該第一反射體一段距離處之第一電極；及一安置於該第一反射體與該第一電極之間的第二反射體，該第二反射體可在一非驅動位置、一第一驅動位置及一第二驅動位置之間移動，其中該第一驅動位置比該非驅動位置更靠近該第一反射體，且其中該第二驅動位置比該非驅動位置距離該第一反射體更遠；其中該第一反射體包含一經構造以驅動該第二反射體朝向該第一驅動位置之第二電極，且其中該第一電極係經構造以驅動該第二反射體朝向該第二驅動位置。
  2. 如請求項1之光調變裝置，其中該第一反射體至少部分透明。
  3. 如請求項1之光調變裝置，其中該第一反射體包含至少一反射材料層。
  4. 如請求項1之光調變裝置，其中該第二反射體包含一第三電極。
  5. 如請求項4之光調變裝置，其中該第二電極及該第三電極中之每一電極均包含一導電材料層。
  6. 如請求項4之光調變裝置，其中該第二反射體響應於在該第二電極與該第三電極之間所施加的一電壓電位而移動至該第一驅動位置。
  7. 如請求項6之光調變裝置，其中當該第二反射體處於該 第一驅動位置時，該調變器反射白光。
  8. 如請求項4之光調變裝置，其中該第二反射體響應於在該第一電極與該第三電極之間所施加的一電壓電位而移動至該第二驅動位置。
  9. 如請求項8之光調變裝置，其中當該第二反射體處於該第二驅動位置時，該調變器選擇性地反射在與一顏色相關聯的一可見波長範圍內之光。
  10. 如請求項1之光調變裝置，其中當該第二反射體處於該非驅動位置時，該調變器實質上吸收入射可見光。
  11. 如請求項1之光調變裝置，其進一步包含：一處理器，其與該第一電極、該第一反射體及該第二反射體中之至少一者電性相通，該處理器經組態以處理影像資料；及一與該處理器電相通之記憶體裝置。
  12. 如請求項11之光調變裝置，其進一步包含一驅動電路，該驅動電路經組態以將至少一訊號發送至該第一電極、該第一反射體及該第二反射體中之至少一者。
  13. 如請求項12之光調變裝置，其進一步包含一控制器，該控制器經組態以將該影像資料之至少一部分發送至該驅動電路。
  14. 如請求項11之光調變裝置，其進一步包含一影像源模組，該影像源模組經組態以將該影像資料發送至該處理器。
  15. 如請求項14之光調變裝置，其中該影像源模組包含一接 收器、收發器及發射器中之至少一者。
  16. 如請求項11之光調變裝置，其進一步包含一輸入裝置，該輸入裝置經組態以接收輸入資料並將該輸入資料傳送至該處理器。
  17. 一種光調變裝置，其包含：用於反射光之第一構件；用於反射光之第二構件，該第二反射構件經組態以安置在一非驅動位置、該非驅動位置之一第一側及該非驅動位置之一第二側中之一位置上；及第一安置構件，其用於將該第二反射構件安置在該非驅動位置、該非驅動位置之一第一側上之一第一位置及該非驅動位置之一第二側上之一第二位置中之一位置上；其中該第一反射構件包含一經構造以驅動該第二反射構件朝向該第一驅動位置之第二安置構件，且其中該第一安置構件係經構造以驅動該第二反射構件朝向該第二驅動位置。
  18. 如請求項17之光調變裝置，其中該第一及該第二反射構件各自包含一反射層。
  19. 如請求項17之光調變裝置，其中該第一安置構件包含一電極。
  20. 如請求項17之光調變裝置，其中該第一安置構件包含兩個電極。
  21. 如請求項17之光調變裝置，其中該第一安置構件包含三 個或三個以上電極。
  22. 如請求項17之光調變裝置，其中該第一及該第二反射構件各自包含該第一安置構件。
  23. 如請求項22之光調變裝置，其中該第一安置構件包含一電極。
  24. 如請求項17之光調變裝置，其進一步包含用於啟動該安置構件之構件。
  25. 如請求項24之光調變裝置，其中該啟動構件包含一驅動電路。
  26. 如請求項17之光調變裝置，其中該第二反射構件經組態以在安置於該非驅動位置之該第一側上時反射白光或具有一顏色之可見波長範圍之光。
  27. 如請求項17之光調變裝置，其中該第二反射構件經組態以在安置於該非驅動位置時實質上吸收光。
  28. 如請求項17之光調變裝置，其中該第一反射構件組態成部分透明。
  29. 如請求項17之光調變裝置，其中該第一反射構件包含至少一反射材料層。
  30. 一種顯示器，其包含如請求項17之光調變裝置。
  31. 一種驅動一MEMS裝置之方法，該MEMS裝置包含一第一電極、一第二電極及一安置於該第一電極與該第二電極之間並經組態以在至少三個位置之間移動之可移動電極，該方法包含：在該第一電極與該可移動電極之間施加一第一電壓電 位差以自一未驅動位置驅動該可移動電極朝向該第一電極並且到達一第一驅動位置，其中該第一驅動位置比該未驅動位置距離該第一反射體更近，其中在該可移動電極與該第一電極之間產生一第一吸引力；在該第一電極與該可移動電極之間施加一第二電壓電位差，並在該第二電極與該可移動電極之間施加一第三電壓電位差，以離開該第一電極並朝向該第二電極驅動該可移動電極，其中施加該第二電壓電位差導致在該可移動電極與該第一電極之間產生一第二吸引力，且施加該第三電壓電位差導致在該可移動電極與該第二電極之間產生一第三吸引力，且其中該第三吸引力大於該第二吸引力；及在該第二電極與該可移動電極之間施加一第四電壓電位差以驅動該可移動電極朝向該第二電極到達一第二驅動位置，該第二驅動位置比該非驅動位置距離該第一反射體更遠。
  32. 如請求項31之方法，其中該吸引力包含一靜態摩擦力。
  33. 如請求項31之方法，其中施加該第一電位差進一步包含反射白光。
  34. 如請求項31之方法，其中施加該第二及該第三電位差進一步包含反射彩色光。
  35. 如請求項31之方法，其中在該第一電極與該可移動電極之間施加一低於一第一臨限值之第一電位差並在該第二電極與該可移動電極之間施加一低於一第二臨限值之第 二電位差，包含實質上吸收入射光。
  36. 一種製造一多狀態光調變器之方法，該方法包含：形成一第一反射體；形成一距該第一反射體一段距離安置之第一電極；及形成一安置在該第一反射體與該第一電極之間的第二反射體，該第二反射體可在一非驅動位置、一第一驅動位置及一第二驅動位置之間移動，其中該第一驅動位置比該非驅動位置更靠近該第一反射體，且其中該第二驅動位置比該非驅動位置距離該第一反射體更遠；其中形成該第一反射體包含形成一經構造以驅動該第二反射體朝向該第一驅動位置之第二電極，且其中該第一電極經構造以驅動該第二反射體朝向該第二驅動位置。
  37. 如請求項36之方法，其中形成該第二反射體包含形成一第三電極。
  38. 如請求項37之方法，其中形成該第二電極及該第三電極中之每一電極，包含形成一導電材料層。
  39. 一種光調變器，其係藉由如請求項36之方法製造。
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