TWI411055B - 設計及使用重疊量測中的微靶材之方法及設備 - Google Patents

設計及使用重疊量測中的微靶材之方法及設備 Download PDF

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Publication number
TWI411055B
TWI411055B TW095139365A TW95139365A TWI411055B TW I411055 B TWI411055 B TW I411055B TW 095139365 A TW095139365 A TW 095139365A TW 95139365 A TW95139365 A TW 95139365A TW I411055 B TWI411055 B TW I411055B
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TW
Taiwan
Prior art keywords
target
layer
array
structures
overlap
Prior art date
Application number
TW095139365A
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English (en)
Chinese (zh)
Other versions
TW200737386A (en
Inventor
李文斯基 維德米爾
艾朵 麥可
佛朗模 艾維
丹朵 丹尼爾
Original Assignee
Ｋｌａ天可科技股份有限公司
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Publication date
Application filed by Ｋｌａ天可科技股份有限公司 filed Critical Ｋｌａ天可科技股份有限公司
Publication of TW200737386A publication Critical patent/TW200737386A/zh
Application granted granted Critical
Publication of TWI411055B publication Critical patent/TWI411055B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/501—Marks applied to devices, e.g. for alignment or identification for use before dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/601—Marks applied to devices, e.g. for alignment or identification for use after dicing
    • H10W46/603—Formed on wafers or substrates before dicing and remaining on chips after dicing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW095139365A 2005-10-31 2006-10-25 設計及使用重疊量測中的微靶材之方法及設備 TWI411055B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US73243305P 2005-10-31 2005-10-31
US11/329,716 US7526749B2 (en) 2005-10-31 2006-01-10 Methods and apparatus for designing and using micro-targets in overlay metrology

Publications (2)

Publication Number Publication Date
TW200737386A TW200737386A (en) 2007-10-01
TWI411055B true TWI411055B (zh) 2013-10-01

Family

ID=37995066

Family Applications (2)

Application Number Title Priority Date Filing Date
TW095139365A TWI411055B (zh) 2005-10-31 2006-10-25 設計及使用重疊量測中的微靶材之方法及設備
TW102126269A TW201415567A (zh) 2005-10-31 2006-10-25 設計及使用重疊量測中的微靶材之方法及設備

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW102126269A TW201415567A (zh) 2005-10-31 2006-10-25 設計及使用重疊量測中的微靶材之方法及設備

Country Status (5)

Country Link
US (1) US7526749B2 (https=)
EP (1) EP1946372B1 (https=)
JP (3) JP5443759B2 (https=)
TW (2) TWI411055B (https=)
WO (1) WO2007053376A2 (https=)

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US7526749B2 (en) * 2005-10-31 2009-04-28 Kla-Tencor Technologies Corporation Methods and apparatus for designing and using micro-targets in overlay metrology
US9151712B1 (en) * 2007-05-30 2015-10-06 Kla-Tencor Corporation Rule checking for metrology and inspection
DE102007046850B4 (de) * 2007-09-29 2014-05-22 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Verfahren zum Bestimmen einer Überlagerungsgenauigkeit
US8060843B2 (en) * 2008-06-18 2011-11-15 Taiwan Semiconductor Manufacturing Company, Ltd. Verification of 3D integrated circuits
US9927718B2 (en) * 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems
US10890436B2 (en) * 2011-07-19 2021-01-12 Kla Corporation Overlay targets with orthogonal underlayer dummyfill
US9007585B2 (en) * 2012-03-07 2015-04-14 Kla-Tencor Corporation Imaging overlay metrology target and complimentary overlay metrology measurement system
WO2013177208A1 (en) * 2012-05-22 2013-11-28 Kla-Tencor Corporation Overlay targets with orthogonal underlayer dummyfill
US9576861B2 (en) * 2012-11-20 2017-02-21 Kla-Tencor Corporation Method and system for universal target based inspection and metrology
US9123649B1 (en) * 2013-01-21 2015-09-01 Kla-Tencor Corporation Fit-to-pitch overlay measurement targets
US9104831B2 (en) * 2013-08-23 2015-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor overlay production system and method
US9727047B2 (en) * 2014-10-14 2017-08-08 Kla-Tencor Corp. Defect detection using structural information
CN107533020B (zh) * 2015-04-28 2020-08-14 科磊股份有限公司 计算上高效的基于x射线的叠盖测量系统与方法
WO2016202560A1 (en) * 2015-06-18 2016-12-22 Asml Netherlands B.V. Calibration method for a lithographic apparatus
US9864280B2 (en) * 2015-10-02 2018-01-09 Applied Materials, Inc. Overlay error correction
US10303839B2 (en) * 2016-06-07 2019-05-28 Kla-Tencor Corporation Electrically relevant placement of metrology targets using design analysis
KR102649158B1 (ko) * 2018-12-03 2024-03-20 에이에스엠엘 네델란즈 비.브이. 반도체 제조 공정의 수율을 예측하는 방법
WO2020141071A1 (en) * 2018-12-31 2020-07-09 Asml Netherlands B.V. Method for calibrating a scanning charged particle microscope
EP3971648A1 (en) * 2020-09-17 2022-03-23 ASML Netherlands B.V. Mark to be projected on an object durign a lithograhpic process and method for designing a mark

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US20030206298A1 (en) * 2002-05-02 2003-11-06 Joerg Bischoff Overlay measurements using zero-order cross polarization measurements
US20030212525A1 (en) * 2002-01-31 2003-11-13 Joerg Bischoff Overlay measurements using periodic gratings
US6958819B1 (en) * 2002-04-04 2005-10-25 Nanometrics Incorporated Encoder with an alignment target

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JP2663623B2 (ja) * 1989-01-30 1997-10-15 住友金属工業株式会社 レジストパターンの形成方法
JPH0562874A (ja) * 1991-09-05 1993-03-12 Fujitsu Ltd 半導体装置の製造方法
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Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030212525A1 (en) * 2002-01-31 2003-11-13 Joerg Bischoff Overlay measurements using periodic gratings
US6958819B1 (en) * 2002-04-04 2005-10-25 Nanometrics Incorporated Encoder with an alignment target
US20030206298A1 (en) * 2002-05-02 2003-11-06 Joerg Bischoff Overlay measurements using zero-order cross polarization measurements

Also Published As

Publication number Publication date
JP2015039007A (ja) 2015-02-26
US20070096094A1 (en) 2007-05-03
JP5813692B2 (ja) 2015-11-17
WO2007053376A2 (en) 2007-05-10
EP1946372B1 (en) 2014-07-16
EP1946372A2 (en) 2008-07-23
EP1946372A4 (en) 2011-01-05
TW201415567A (zh) 2014-04-16
WO2007053376A3 (en) 2009-04-23
JP2009514230A (ja) 2009-04-02
JP6042396B2 (ja) 2016-12-14
JP2013153217A (ja) 2013-08-08
JP5443759B2 (ja) 2014-03-19
US7526749B2 (en) 2009-04-28
TW200737386A (en) 2007-10-01

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