TWI411034B - A plasma processing apparatus and a method and a focusing ring - Google Patents

A plasma processing apparatus and a method and a focusing ring Download PDF

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Publication number
TWI411034B
TWI411034B TW096109199A TW96109199A TWI411034B TW I411034 B TWI411034 B TW I411034B TW 096109199 A TW096109199 A TW 096109199A TW 96109199 A TW96109199 A TW 96109199A TW I411034 B TWI411034 B TW I411034B
Authority
TW
Taiwan
Prior art keywords
ring portion
substrate
processed
placing table
inner ring
Prior art date
Application number
TW096109199A
Other languages
English (en)
Chinese (zh)
Other versions
TW200741860A (en
Inventor
Akira Koshiishi
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200741860A publication Critical patent/TW200741860A/zh
Application granted granted Critical
Publication of TWI411034B publication Critical patent/TWI411034B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW096109199A 2006-03-17 2007-03-16 A plasma processing apparatus and a method and a focusing ring TWI411034B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006074372A JP2007250967A (ja) 2006-03-17 2006-03-17 プラズマ処理装置および方法とフォーカスリング

Publications (2)

Publication Number Publication Date
TW200741860A TW200741860A (en) 2007-11-01
TWI411034B true TWI411034B (zh) 2013-10-01

Family

ID=38594919

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096109199A TWI411034B (zh) 2006-03-17 2007-03-16 A plasma processing apparatus and a method and a focusing ring

Country Status (4)

Country Link
JP (1) JP2007250967A (pl)
KR (2) KR20070094522A (pl)
CN (2) CN101807509B (pl)
TW (1) TWI411034B (pl)

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JP2010045200A (ja) * 2008-08-13 2010-02-25 Tokyo Electron Ltd フォーカスリング、プラズマ処理装置及びプラズマ処理方法
KR101592061B1 (ko) * 2008-10-31 2016-02-04 램 리써치 코포레이션 플라즈마 프로세싱 챔버의 하부 전극 어셈블리
JP2010278166A (ja) * 2009-05-27 2010-12-09 Tokyo Electron Ltd プラズマ処理用円環状部品、及びプラズマ処理装置
JP5227264B2 (ja) 2009-06-02 2013-07-03 東京エレクトロン株式会社 プラズマ処理装置，プラズマ処理方法，プログラム
JP5496568B2 (ja) * 2009-08-04 2014-05-21 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2013149635A (ja) * 2010-05-11 2013-08-01 Sharp Corp ドライエッチング装置
JP2013149634A (ja) * 2010-05-11 2013-08-01 Sharp Corp ドライエッチング装置
JP5690596B2 (ja) * 2011-01-07 2015-03-25 東京エレクトロン株式会社 フォーカスリング及び該フォーカスリングを備える基板処理装置
JP2012169552A (ja) * 2011-02-16 2012-09-06 Tokyo Electron Ltd 冷却機構、処理室、処理室内部品及び冷却方法
JP5741124B2 (ja) * 2011-03-29 2015-07-01 東京エレクトロン株式会社 プラズマ処理装置
US9412579B2 (en) * 2012-04-26 2016-08-09 Applied Materials, Inc. Methods and apparatus for controlling substrate uniformity
CN105074869A (zh) * 2013-06-26 2015-11-18 应用材料公司 在icp等离子体处理腔室中用于高产出、衬底极端边缘缺陷减少的单环设计
US10047457B2 (en) 2013-09-16 2018-08-14 Applied Materials, Inc. EPI pre-heat ring
JP5767373B2 (ja) * 2014-07-29 2015-08-19 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法並びにこれを実施するためのプログラムを記憶する記憶媒体
CN104715997A (zh) * 2015-03-30 2015-06-17 上海华力微电子有限公司 聚焦环及具有该聚焦环的等离子体处理装置
JP6570971B2 (ja) * 2015-05-27 2019-09-04 東京エレクトロン株式会社 プラズマ処理装置およびフォーカスリング
KR102382823B1 (ko) * 2015-09-04 2022-04-06 삼성전자주식회사 에어 홀을 갖는 링 부재 및 그를 포함하는 기판 처리 장치
JP6607795B2 (ja) * 2016-01-25 2019-11-20 東京エレクトロン株式会社 基板処理装置
JP6698502B2 (ja) * 2016-11-21 2020-05-27 東京エレクトロン株式会社 載置台及びプラズマ処理装置
KR102581226B1 (ko) * 2016-12-23 2023-09-20 삼성전자주식회사 플라즈마 처리 장치
JP6926225B2 (ja) * 2017-03-31 2021-08-25 マトソン テクノロジー インコーポレイテッドＭａｔｔｓｏｎ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． 処理チャンバにおける工作物における材料堆積防止
KR102063108B1 (ko) * 2017-10-30 2020-01-08 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP7055040B2 (ja) * 2018-03-07 2022-04-15 東京エレクトロン株式会社 被処理体の載置装置及び処理装置
SG11202009444QA (en) * 2018-04-10 2020-10-29 Applied Materials Inc Resolving spontaneous arcing during thick film deposition of high temperature amorphous carbon deposition
KR102376127B1 (ko) * 2018-05-30 2022-03-18 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 활성 가스 생성 장치
JP2019220497A (ja) * 2018-06-15 2019-12-26 東京エレクトロン株式会社 載置台及びプラズマ処理装置
US11094511B2 (en) * 2018-11-13 2021-08-17 Applied Materials, Inc. Processing chamber with substrate edge enhancement processing
JP7258562B2 (ja) * 2019-01-11 2023-04-17 東京エレクトロン株式会社 処理方法及びプラズマ処理装置
JP7278160B2 (ja) * 2019-07-01 2023-05-19 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP7278896B2 (ja) 2019-07-16 2023-05-22 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
KR102175990B1 (ko) * 2020-01-09 2020-11-09 하나머티리얼즈(주) 포커스링 및 그를 포함하는 플라즈마 장치

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US6624084B2 (en) * 1999-12-27 2003-09-23 Hitachi, Ltd. Plasma processing equipment and plasma processing method using the same
US6554954B2 (en) * 2001-04-03 2003-04-29 Applied Materials Inc. Conductive collar surrounding semiconductor workpiece in plasma chamber
TWI234417B (en) * 2001-07-10 2005-06-11 Tokyo Electron Ltd Plasma procesor and plasma processing method
US6887340B2 (en) * 2001-11-13 2005-05-03 Lam Research Corporation Etch rate uniformity

Also Published As

Publication number Publication date
TW200741860A (en) 2007-11-01
CN101038849A (zh) 2007-09-19
KR20090026321A (ko) 2009-03-12
JP2007250967A (ja) 2007-09-27
CN101807509B (zh) 2012-07-25
KR20070094522A (ko) 2007-09-20
KR100959706B1 (ko) 2010-05-25
CN101807509A (zh) 2010-08-18
CN101038849B (zh) 2010-05-26

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