TWI400208B - 半導體封裝用玻璃蓋 - Google Patents
半導體封裝用玻璃蓋 Download PDFInfo
- Publication number
- TWI400208B TWI400208B TW099139999A TW99139999A TWI400208B TW I400208 B TWI400208 B TW I400208B TW 099139999 A TW099139999 A TW 099139999A TW 99139999 A TW99139999 A TW 99139999A TW I400208 B TWI400208 B TW I400208B
- Authority
- TW
- Taiwan
- Prior art keywords
- glass
- glass cover
- semiconductor package
- less
- package according
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 51
- 239000006059 cover glass Substances 0.000 title description 4
- 239000011521 glass Substances 0.000 claims description 204
- 238000003384 imaging method Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 19
- 230000005260 alpha ray Effects 0.000 claims description 18
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 16
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 16
- 230000003746 surface roughness Effects 0.000 claims description 15
- 239000003513 alkali Substances 0.000 claims description 11
- 229910000272 alkali metal oxide Inorganic materials 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 11
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 claims description 10
- 238000003280 down draw process Methods 0.000 claims description 8
- 238000010828 elution Methods 0.000 claims description 8
- 238000007500 overflow downdraw method Methods 0.000 claims description 8
- 238000006124 Pilkington process Methods 0.000 claims description 6
- 238000005538 encapsulation Methods 0.000 claims description 2
- 239000005357 flat glass Substances 0.000 description 23
- 238000002844 melting Methods 0.000 description 21
- 230000008018 melting Effects 0.000 description 21
- 239000002994 raw material Substances 0.000 description 21
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 20
- 238000004806 packaging method and process Methods 0.000 description 15
- 230000000694 effects Effects 0.000 description 13
- 229910052770 Uranium Inorganic materials 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 12
- 239000006060 molten glass Substances 0.000 description 12
- 238000005498 polishing Methods 0.000 description 11
- 229910052776 Thorium Inorganic materials 0.000 description 10
- 239000007791 liquid phase Substances 0.000 description 10
- 229910052697 platinum Inorganic materials 0.000 description 10
- 238000005520 cutting process Methods 0.000 description 8
- 238000000227 grinding Methods 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 238000007689 inspection Methods 0.000 description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- 238000003698 laser cutting Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000002285 radioactive effect Effects 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- 229910000640 Fe alloy Inorganic materials 0.000 description 4
- 229910006404 SnO 2 Inorganic materials 0.000 description 4
- 229910000420 cerium oxide Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000002649 leather substitute Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 229910018068 Li 2 O Inorganic materials 0.000 description 3
- 239000006061 abrasive grain Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000008395 clarifying agent Substances 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000011819 refractory material Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005352 clarification Methods 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000000156 glass melt Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000011449 brick Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- PXXKQOPKNFECSZ-UHFFFAOYSA-N platinum rhodium Chemical compound [Rh].[Pt] PXXKQOPKNFECSZ-UHFFFAOYSA-N 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000009774 resonance method Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
- C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Glass Compositions (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003041411 | 2003-02-19 | ||
| JP2003339209 | 2003-09-30 | ||
| JP2004035383A JP4432110B2 (ja) | 2003-02-19 | 2004-02-12 | 半導体パッケージ用カバーガラス |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201118052A TW201118052A (en) | 2011-06-01 |
| TWI400208B true TWI400208B (zh) | 2013-07-01 |
Family
ID=32912836
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099139999A TWI400208B (zh) | 2003-02-19 | 2004-02-17 | 半導體封裝用玻璃蓋 |
| TW093103712A TWI358396B (en) | 2003-02-19 | 2004-02-17 | Cover glass for semiconductor package |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093103712A TWI358396B (en) | 2003-02-19 | 2004-02-17 | Cover glass for semiconductor package |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4432110B2 (ko) |
| KR (2) | KR101156984B1 (ko) |
| TW (2) | TWI400208B (ko) |
| WO (1) | WO2004075289A1 (ko) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4756337B2 (ja) * | 2004-10-12 | 2011-08-24 | 日本電気硝子株式会社 | 固体撮像素子用カバーガラス |
| JP4923556B2 (ja) * | 2005-12-16 | 2012-04-25 | 日本電気硝子株式会社 | 情報記録媒体用ガラス基板 |
| JP5071878B2 (ja) * | 2006-09-12 | 2012-11-14 | 日本電気硝子株式会社 | 無アルカリガラスおよびこれを用いた無アルカリガラス基板 |
| US7666511B2 (en) * | 2007-05-18 | 2010-02-23 | Corning Incorporated | Down-drawable, chemically strengthened glass for cover plate |
| US20100215862A1 (en) * | 2009-02-26 | 2010-08-26 | Sinue Gomez | Method for forming an opal glass |
| JP5594522B2 (ja) * | 2009-07-03 | 2014-09-24 | 日本電気硝子株式会社 | 電子デバイス製造用ガラスフィルム積層体 |
| CN102844858A (zh) * | 2010-04-20 | 2012-12-26 | 旭硝子株式会社 | 用于形成半导体器件贯通电极的玻璃基板 |
| JP5894754B2 (ja) * | 2011-09-16 | 2016-03-30 | 浜松ホトニクス株式会社 | レーザ加工方法 |
| JP2014205604A (ja) * | 2012-06-25 | 2014-10-30 | 日本電気硝子株式会社 | 強化ガラス基板及びその製造方法 |
| JP6571398B2 (ja) * | 2015-06-04 | 2019-09-04 | リンテック株式会社 | 半導体用保護フィルム、半導体装置及び複合シート |
| CN109153596A (zh) | 2016-05-25 | 2019-01-04 | Ａｇｃ株式会社 | 无碱玻璃基板、层叠基板和玻璃基板的制造方法 |
| CN110885972A (zh) * | 2019-10-30 | 2020-03-17 | 杭州美迪凯光电科技股份有限公司 | 一种消除摄像模组点子缺陷的ald制备方法及其产物 |
| CN110767668B (zh) * | 2019-12-30 | 2020-03-27 | 杭州美迪凯光电科技股份有限公司 | 含纳米级表面的clcc封装体盖板、封装体和摄像模组 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4994415A (en) * | 1986-09-17 | 1991-02-19 | Nippon Electric Glass Company, Limited | SiO2 -Al2 O3 -BaO glass substrates with improved chemical resistance for use in display panels and others having thin films |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11209145A (ja) * | 1998-01-20 | 1999-08-03 | Nippon Electric Glass Co Ltd | 光半導体用窓ガラス |
| JP2000143286A (ja) * | 1998-09-04 | 2000-05-23 | Nippon Electric Glass Co Ltd | 鉛溶出の少ない管ガラス |
| DE10005088C1 (de) * | 2000-02-04 | 2001-03-15 | Schott Glas | Alkalihaltiges Aluminoborosilicatglas und seine Verwendung |
| JP3506237B2 (ja) * | 2000-10-19 | 2004-03-15 | 日本電気硝子株式会社 | 固体撮像素子用カバーガラス |
| JP2002308643A (ja) * | 2001-02-01 | 2002-10-23 | Nippon Electric Glass Co Ltd | 無アルカリガラス及びディスプレイ用ガラス基板 |
| JP2003188450A (ja) * | 2001-12-17 | 2003-07-04 | Nippon Electric Glass Co Ltd | 光半導体用カバーガラス |
-
2004
- 2004-02-12 JP JP2004035383A patent/JP4432110B2/ja not_active Expired - Fee Related
- 2004-02-16 KR KR1020107023852A patent/KR101156984B1/ko active IP Right Grant
- 2004-02-16 KR KR1020057012876A patent/KR101015428B1/ko active IP Right Grant
- 2004-02-16 WO PCT/JP2004/001659 patent/WO2004075289A1/ja active Application Filing
- 2004-02-17 TW TW099139999A patent/TWI400208B/zh not_active IP Right Cessation
- 2004-02-17 TW TW093103712A patent/TWI358396B/zh not_active IP Right Cessation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4994415A (en) * | 1986-09-17 | 1991-02-19 | Nippon Electric Glass Company, Limited | SiO2 -Al2 O3 -BaO glass substrates with improved chemical resistance for use in display panels and others having thin films |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200427649A (en) | 2004-12-16 |
| KR20050103276A (ko) | 2005-10-28 |
| KR101015428B1 (ko) | 2011-02-22 |
| WO2004075289A1 (ja) | 2004-09-02 |
| JP2005126311A (ja) | 2005-05-19 |
| TW201118052A (en) | 2011-06-01 |
| KR20100119828A (ko) | 2010-11-10 |
| KR101156984B1 (ko) | 2012-06-20 |
| JP4432110B2 (ja) | 2010-03-17 |
| TWI358396B (en) | 2012-02-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |