TW201118052A - Cover glass for semiconductor package - Google Patents

Abstract

A cover glass for semiconductor package 10 has: a first transmission face 10a and a second transmission face 10b in thickness direction, and side face 10c. The size of the cover glass is 14x16x0.5 mm, the first transmission face 10a and the second transmission face 10b is the face without polishing, and the surface roughness are less then 0.5 nm.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a glass cover for a semiconductor package and a method of manufacturing the same, wherein the glass cover is mounted on a semiconductor package that houses a solid-state imaging element or a laser diode. The front is used as a light transmission window to protect the solid-state imaging element or the laser diode. [Prior Art] In front of the solid-state imaging element, in order to protect the semiconductor element, a glass cover having a flat transparent surface is provided, which is made of a ceramic material such as an oxidation boat or a metal material, or In the package formed of a resin material, the sealing material formed by using various organic resins or low-melting-point glass is sealed, and then functions as a light-transmitting window while protecting the solid-state imaging element housed inside the package. Regarding solid-state imaging components, the semiconductors that are often used today are CCD (Charge Coupled Device) or CMOS (Complementary).

Metal Oxide Semiconductor), CCD is used to capture high-definition images, mainly on cameras. In recent years, the use of image data processing has accelerated and rapidly expanded its range of applications. In particular, it is loaded on a digital camera or a mobile phone, and is mostly used to convert high-definition images into electronic information materials. Moreover, CMOS is called a complementary metal oxide semiconductor, and it can be miniaturized compared with a CCD, and power consumption is reduced to about one-fifth, and a microprocessor process can be utilized without increasing the cost of equipment investment. Moreover, it is advantageous in that it can be manufactured inexpensively, and therefore it is often mounted on an image input device such as a mobile phone or a small personal computer. Sense 201118052, CCD or CMOS' requires the correct conversion of the image to electronic information. For the glass cover used on it, there are strict standards for the stains or scratches on the surface, and a high level of cleanliness is required. In addition to the cleanliness of the surface, it is also required that bubbles, lines, and crystals are not present inside the glass, and foreign matter such as platinum is prevented from entering. Furthermore, in order to be well sealed with various packages, it is required to have a similar thermal expansion coefficient with the encapsulating material. Moreover, such glass is also required to have weather resistance which is not deteriorated over a long period of time, and low density and can be quantified. Furthermore, in the case of CCD use, if the glass cover contains a radiation element such as _) or (10), it is easy to emit α-rays from the glass, and since this radiation is large, it will cause soft mis-recording (sQft e earn), and therefore requires Do not include nuclear cravings. Therefore, the opposite side of the CCD glass cover 2 is manufactured, and the inner wall of the melting furnace for smelting the raw material is formed of ruthenium or platinum having a small amount of radioisotope. For example, Patent Document 1 Patent Document 2 Patent Document 3 2 discloses a glass cover for solid-state imaging element packaging that reduces radioactive isotope and reduces the amount of radiation emitted. Direct Injection 1. Japanese Patent No. 2660891 Japanese Unexamined Patent Publication No. Hei No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. 6-211539. Μ Μ 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 固态 影像 固态 固态 固态 固态 固态 固态 固态 固态 固态In the case of "^ production, that is, in the case of glass crucible, the glass material is first fused in the melting furnace 20111803⁄4, and the defoaming and graining are homogenized, and the glass molten liquid is poured into the mold to be cast. Forming 'or continuously extracting the glass melt on the extension plate' to form a certain shape. Secondly, by extruding the obtained glass formed body (glass ingot), the thickness is made to a certain thickness The glass is subjected to a dicing process, and the surface is subjected to a grinding process to obtain a large-sized plate-shaped glass of a certain thickness. The glass is finely cut to a certain size. Accordingly, although the glass cover for the solid-state photographic element package is used On both sides of the light-transmissive surface, the grinding process is applied, but numerous fine concavities and convexities (small scratches) are formed on the surface due to the polishing. On the other hand, in recent years, the solid-state imaging device has been highly tempered and miniaturized, accompanied by high painting. The quality and the miniaturization have a tendency to reduce the amount of light received by seven pieces per day, and the fine concavities and convexities formed by the transparent surface of the polished glass cover cause the incident light to be easily scattered, so that the amount of light received by a part of the components is insufficient. As a result, there is a concern that the component may malfunction. Moreover, if foreign matter or air bubbles are mixed in the glass cover for solid-state imaging device packaging, and dust is attached to the surface, a good display image cannot be obtained, which is a fatal defect of the glass cover. Image inspection will be carried out before the glass cover is shipped. However, as described above, the light-transmissive surface of the glass cover is formed. Numerous fine concavities and convexities. At the time of image inspection, the illuminating surface of the transparent surface of the glass cover causes the illuminating light to refract, and the visible and dark visible parts will 'see δ, and it is impossible to correctly detect the presence or absence of foreign matter or dust. Moreover, the unevenness of the transparent surface of the glass cover can be made smaller by the very precise and long-term grinding process. However, such precision grinding is not mass-produced, and it must be large in order to cope with the increase. Increase in the range - and prepare for it again' This precision is enhanced by the rotary grinding with human leather 201118052

A portion of the artificial leather forms a raised portion. The powder produced by grinding will enter the artificial leather, Lang Jl·{丄, Π丄_ . Because f ithi ifir

Further, the cerium oxide used as the free abrasive grains contains a slurry of free abrasive grains such as ruthenium. The dopant Th may become a source of α rays if the oxidized ornament attached to the glass is not completely removed after the polishing. The adverse effects on solid-state photographic elements are limited by the grinding, the above-mentioned precision grinding that impairs productivity, or the problems that are produced to some extent that are unavoidable. SUMMARY OF THE INVENTION In view of the above problems, an object of the present invention is to provide a glass cover for a semiconductor package which can be smoothed without polishing, so that various problems associated with polishing can be eliminated. In order to solve the above-mentioned problem, the glass cover for semiconductor package of the present invention is characterized in that it has a light-transmissive surface having no polishing surface, and the surface roughness (Ra) is not more than 1. Here, "Ra" is an arithmetic mean roughness defined in JISb〇6〇1-1994 ° and the glass cover for semiconductor package of the present invention is characterized by using a down draw method or It is formed by a float method, and the surface roughness (Ra) of the light transmitting surface is 1. 〇 nm or less. 201118052

Further, the glass cover for semiconductor package of the present invention is characterized in that it contains Si〇2 52~·, ΑΙΑ 5 to 20%, B2〇3 5 to 20%, and soil-based metal oxide 4~ in mass%. 30%, ΖηΟ 0~5% of the basic composition, substantially does not contain alkali metal oxides, in the temperature range of 3 〇 ~ 38 〇. The average thermal expansion coefficient of c is 30 to 85 x 1 (T7/° C., and the glass viscosity at the liquidus temperature is 1 〇 5.2 dPa · s or more. 曰 and j The glass cover for semiconductor encapsulation of the present invention is characterized by a mass φ % Containing Si〇2 58~75%, Ah〇3 〇. 5~15%, B2〇3 5~20%, metal oxide 1~ application, soil metal oxide 〇~2〇%, such as 〇〇 The basic composition of 1〇%, in the temperature range of 30~380 degrees. The average coefficient of thermal expansion of C is 30~85xl〇_7/t: 'The liquid viscosity of the liquidus is 1〇5 2 ga s or more. In the method for producing a glass cover for a semiconductor package according to the present invention, a glass raw material is introduced into a swarth tank in which at least an inner wall is formed of a pyrotechnic material, and is melted and then formed into a plate shape by a down-draw method or a float method. The glass cover has a non-abrasive surface, and the surface roughness (5) is 1 Gnm or less. It can suppress component malfunction caused by incident light scattering, and can detect the presence or absence of foreign matter or dust in the image inspection, and prevent black streaks, etc. Poor display. And, because of the ability to omit precision The steps of the work can be inexpensive and mass-produced. Since the free abrasive grains are not used without grinding, it is possible to prevent the oxidation screen from being caused by the oxidation screen (and the 'manufacture of the glass cover for the semiconductor package according to the present invention'). In the semiconductor package for semiconductor package of the present invention, it is possible to easily produce a glass cover for a semiconductor package having a surface roughness (Ra) of 1.180 nm or less. The glass cover is characterized in that the surface of the light-transmissive surface having a non-abrasive surface has a surface roughness (Ra) of 1 〇 nm or less. The glass cover having a high surface quality can be formed by a down-draw method or a float method. 'It is suitable to use the overflow down-draw method or the slit down-draw method. However, especially in the case of using the overflow down-draw method, since the surface of the glass is a free surface, it does not come into contact with other members, by controlling its melting condition and forming. Under the circumstance, it is preferable to obtain a plate glass having a desired thickness (0.01 to 0.7 mm in the case of a glass cover for a semiconductor package) and having excellent surface smoothness. In other words, if the overflow down-draw method is used, since the surface (transparent surface) does not need to be polished, a smooth surface can be obtained, and minute scratches due to polishing are not formed, and the surface roughness (1^) can be produced. a glass cover of 丨〇 nm or less, 〇 5 nm or less, or even 0.3 nm or less. The smaller the surface roughness (Ra) of the light-transmissive surface of the glass cover, the scattered light of the light-transmissive surface of the surface roughness of the glass cover The occurrence rate of component malfunction is lowered, and the accuracy of image inspection such as detection of foreign matter is improved. Further, surface roughness (Ra) is a grade for indicating surface smoothness, and an experimental method based on JIS B〇6〇1 can be used. Make measurements. Further, 'as a float method' is a method in which molten glass is supplied to a molten metal tin bath in a reducing gas atmosphere to form a plate, or a method of supplying molten glass on a support, in a sphere and glass A method in which a thin film of a vapor film vaporized by a vapor film forming agent is slid to each other to form a plate shape (refer to Japanese Laid-Open Patent Publication No. Hei 9-295819, Japanese Patent No. 201118052, No. 2001-192219). Further, since the glass cover formed by the float method is inferior in surface quality to the glass cover formed by the lower method, it is preferable to apply surface processing as needed. However, even in this case, since the polishing time is short, the decrease in productivity can be reduced as much as possible, and the adverse effect on the solid-state imaging element due to polishing can be reduced as much as possible.

Further, the glass cover for a semiconductor package of the present invention has a glass viscosity (liquidus viscosity) at a liquidus temperature of not more than 1 2 5 dPa·s, and is less likely to cause loss of transparency in the glass, and can be formed by a down-draw method. That is, when the glass substrate of the S i Or A12〇3-B2〇3-R〇 (or Μ) system is formed by the following method, the glass viscosity of the molded portion is approximately equal to 1〇5.d dPa·s. Therefore, if the liquid viscosity of the glass is in the vicinity of 1 〇 5 _ dPa · S or below, the lost glass is likely to be lost in the formed glass. It is produced in glass. If it is removed from the transparent material, it will not be used in the glass cover. Therefore, in the case of forming a glass cover by using the down-draw method, the liquid phase viscosity is preferably as high as possible, and the material (4) sealing the cover viscosity is required, and the dPa.s is preferably the domain phase viscosity in the glass '= s or more'. Jia is above 105·8 dPa.s. Further, the glass cover for semiconductor package of the present invention oxidizes the adhesive material formed using an organic resin or a low-melting point glass by an average thermal expansion coefficient of 3 to 85 xiG_7/ec in a temperature range of 30 to 380 ° C. Fine 7/. 〇 or a variety of resin packaging, and long-term can still maintain a good package (four) cover thermal expansion coefficient, preferably 35~80x10-7/1 heart X1U / C, more preferably 50~75 201118052^ xlOVc. = & </ br /> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; In order to limit the amount of α-ray emission to the quality, the impurity f U summer from the raw material or the smelting furnace is suppressed below 10 ppb, and the amount of Th is suppressed. Due to the high-fidelity and small size of solid-state photographic elements: 05= 射 t ^ ^ hr u, more preferably 〇· 003 c/cm2 . hr in II θ a : in the range of 5pPb or less, Th amount is less than 10ppb, preferably τγ is set to ί; 8 Ppb or less. In addition, compared with Th, the π μ valley is easy to release the read line, so the allowable amount of U is smaller than that of Th. ' /, the glass cover for semiconductor packaging, the density of the glass -.g cm or less (preferably 2·45 g / cm3 or less), the amount of dissolution is less than mg (preferably 〇) mg or less. For the sake of the following, 'Word' is especially suitable for portable electronic devices that are used outdoors, f ° f, because of digital cameras, digital cameras, mobile phones, =, assistants (10), etc. It has the condition of being used outdoors, and it is suitable for carrying it and has high weather resistance. Therefore, for the S1 body photographic element cover _ used for such applications, in addition to the lightweight characteristics, the weather resistance of the S1 body photographic element and the use in a harsh outdoor environment do not make the product (4) low. Miscellaneous. Therefore, _ is the glass cover used for such purposes. By reducing the density and quenching, and reducing the amount of 201118052 U 1 to improve weather resistance. Moreover, the glass cover rate of the Fenge conductor package of the present invention is reduced and the weight of the machine is sufficient and the deflection of the bulk plate glass becomes large = thin: the practical strength is not Α ί) 1~η ς ^ becomes large It is difficult to operate. A preferred thickness is °, and a thickness of 1 〇·5臓' is (Μ~0.4.) Moreover, the semiconductor sealing glass cover of the present invention has a Young's rate of 65 GPa and more than 6 clothes. The Young's ratio indicates Applying - two == Γ shape on the glass cover. If the Young's ratio is large, it is not easy to prevent direct application to the glass cover, direct force, and, 'σ, which is enough to prevent damage to the component. The glass cover for the conductor sealing is 'the ratio of the Young's rate. If it is not easy to change, it is suitable for portable electronic devices. The 匕 匕 匕 率 rate is preferably as large as possible and bpa / g · cm or more. The glass cover for conductor packaging has a Vickers hardness of 〇 00 or more _ better because it is less likely to form a flaw on the surface. When the assembly step or the carrying step of the machine causes micro-===1 on the surface, the image inspection step after loading on the solid-state imaging element may cause a defect. Therefore, the Vickers hardness is preferably 520 or more. = This is a case where the puncturing property is considered. In addition, it is preferably contained in mass%, can be 52~7〇%, and vice 35 Dish, hidden 5, and earth-like metal oxide 11 201118052 The basic composition of 4~30% of compound and 0~5% of ZnO does not contain metal oxide. The glass cover with this composition has no alkali dissolution. Full 0·01 mg 'excellent in terms of 'good fortune'. Even if the appearance quality is not used for a long period of time, the "substantially not contained" in the present invention means that the content of the component is less than 2000 ppm. The amount of elution can be measured by the experimental method of JIS R3502. The reason for limiting the components constituting the glass cover described above is as follows.

Si〇2 is the main component of the skeleton that constitutes glass.

However, if the effect is too large, the glass has a high second = liter, and the meltability is deteriorated, and the liquidus viscosity tends to be high. Accordingly, the content of Si〇2 is Y~·, preferably 53 to 67%, more preferably ~ coffee.

When Al2〇3 is too much as a component which improves the weather resistance of the glass and the viscosity of the liquid phase, the high-temperature viscosity of the glass increases, and the meltability deteriorates, and the viscosity of the liquid phase tends to increase. Accordingly, the content of 3 is 5 to 8 8 to 19%, more preferably 10 to 18%. ...

Xunyi 3 is a component that acts as a melting agent to reduce the viscosity of the glass and improve the meltability. Furthermore, the phase is used to increase the composition of the liquid. ^Yes, B2〇3, if there is much, the weather resistance of the glass tends to decrease. The content of this secret is 5 to 2 G%, preferably 6 to 15%, more preferably 7 to 13%. Alkaline earth metal oxides (Mg0, Ca0, Sr〇, Ba〇), in the case of lifting glass 3 weathering __, reducing the glass miscellaneous, (10) changing the fertility f-point '(four) too much, the glass has a tendency to lose transparency At the same time, the tendency to rise and rise again. Accordingly, the content of the alkaline earth metal oxide is 4 to 3 (10), preferably 5 to 20%, more preferably 6 to 16%. 12 201118052n In particular, CaO ’ is a high-purity raw material that is easy to start, and is a component that significantly improves the meltability and weather resistance of glass. When the content of CaO is less than 1.5%, the above effect is small, and when it exceeds 15%, the weather resistance is lowered. In order to achieve a more stable grade, the content of CaO is preferably from 2 to 12%, more preferably from 3 to 10%. Further, since BaO and SrO significantly increase the density of the glass, when the glass density is low, the respective contents are limited to 12% or less, and φ is more preferably a combination of the contents of the two. It is 6. 5~13%. Further, since BaO and SrO are likely to contain a radioactive isotope in the raw material, when it is desired to reduce the α-ray, the total content of both is limited to 8. It is preferably 3°/. Hereinafter, it is more preferably 1.4% or less. The amount of dissolution dissolved in the glass is increased, preferably less than 2%. In order to achieve the content of the genus oxide, it is preferably less than 0.1%, and the weather resistance is lowered. The content ΖηΟ improves the meltability of the glass, and has the effect of suppressing the volatilization of the rare earth metal oxide from the molten glass. However, if the content is too large, it is less preferable because the glass is easily lost and the density is increased. Therefore, the upper limit of the content of the content is 5% or less, preferably 3% or less, more preferably 5% or less. , ,... However, in the case of alkali metal oxides (Na2〇, K2〇, Li2〇), in order to achieve a more stable weather resistance, the gold test is over 0.1%, - Duban iΛ ____ more &quot; Full 0 riR%

13 201118052 篡▲ I * Reduces the adhesion and degree of the characteristics, so it is easy to gradually reduce the adhesion strength between the glass cover and the package 1. As a result, a gap is formed between the two, and the cover of the glass is peeled off, so that the effect of the elemental image element cannot be achieved. Further, in the present invention, in particular, in consideration of the production surface, the mass % 3 f Si〇 2 58 to 75%, Ah 〇 3 〇 5 to 15%, B 2 O 3 5 to 20%, and the metallurgical property. Oxide 1 to 2 G%, soil-based metal oxide Q~employed, Zn〇〇~HU basic composition 'The glass cover having such a composition has improved meltability and liquid phase viscosity is easily adjusted. The reason for limiting the components constituting the above glass cover is as follows.

Si〇2 is a main component of the skeleton constituting the glass, and has an effect of improving the weather resistance of the glass. However, if the temperature is too high, the high-temperature viscosity of the glass rises, and the smelting property is deteriorated, and the liquidus viscosity tends to be high. Accordingly,

5%。 The content of Sl 〇 2 is 58~75%' is preferably 58~72%, more preferably 60~70%, and most preferably 60~68.5%.

Al2〇3 is a component necessary for the liquid viscosity of the liquid, and if it is too much, it has a glassy, high-temperature viscosity, and the meltability tends to deteriorate. Accordingly, the content of 八·5〇3 is 〇·5~15%, preferably 1. 1~12%, more preferably 3. 5~12%, and most preferably 6^11%. &amp; 〇 3 is a component that acts as a melting agent to reduce the viscosity of the glass and improve the meltability. Furthermore, it is a component for increasing the viscosity of the liquid phase. However, if the B2〇3 is too large, the weather resistance of the glass tends to decrease. Accordingly, the content of β2〇3 is 5 to 20% ‘preferably 9 to 18% Å, more preferably 11 to 18%, most preferably 12 to 18%. The metal oxide (%2〇, LO, Li2〇) is used to reduce the viscosity of the glass, and the effect of adjusting the coefficient of thermal expansion and the viscosity of the liquid phase is deteriorated. Accordingly, ~13%. The amount is 1~20'/. Preferably, it is 5 to 18%, more preferably 7 and κ has a large effect in adjusting the coefficient of thermal expansion, and ΚΟ # has a large effect on the liquid phase. Therefore, use Naz0 together,

: If you can - maintain the high liquid viscosity ― while adjusting the thermal expansion system. Here, the content of Na2〇 is preferably 0.1 to 11%, and the content of Κ2〇 is preferably 〇·1 to 8%', and the content of the two is preferably 7.6 to 18%. In the present invention, if the ratio of (Na2〇+K2〇)/NaA is limited to 1 1 to 10, a high liquidus viscosity is easily obtained. 5〜3。 More preferably, the ratio of 1. 2~5, more preferably 1. 2~3. Further, in the present invention, as the concentration of Si〇2 decreases, the degree of increase in AhO3 and κ2〇 tends to increase, and the ratio of Si〇2/(Na2〇+K2〇) is limited to 3 to 12, When it is 4 to 10, it is possible to maintain the weather resistance and the meltability of the glass and to obtain a high liquidus viscosity. However, since Lh is easily contained in the raw material with a radioisotope, the content is 0 to 5%, preferably 0 to 3%, more preferably 0 to 1%, most preferably 〇~0. 5% alkaline earth metal Oxides (MgO, CaO, SrO, BaO), while improving the weather resistance of the glass, reduce the viscosity of the glass, and improve the solubility of the component. However, if too much, the glass has a density that is easy to lose transparency. tendency. 0〜18%。 The content of the metal-based oxide is preferably 〇. 15 201118052

CaQ' is a highly pure raw material that is relatively easy to handle, and is a component that is markedly 1fW enthalpy and weather resistant. The content thereof is preferably 〇 5 ; Γη. More preferably 1 to 8%. However, the total amount of such a content must be limited to m or less, preferably 1 Q% or less, more preferably 7% or less. Further, in BaO and SrO, it is easy to contain a radioactive isotope in the raw material, and when the α-ray is reduced to 〇Q1 c/cm 2 _ or less, the content of both is limited to 3% or less, preferably It is less than 1.4%.

Improvement of ZnO _ (four) excellent effect and improve the smelting of glass

Sexually, it has the effect of inhibiting the volatilization of B2Q3 or metal oxides from molten glass. In particular, when the content of Ah 3 is 3% or less, the content of the weather resistance is 2% or more, preferably 4 % or more. In the case where the content of the antimony is too large, the glass tends to lose transparency and the density increases. Therefore, the content of ZnO is limited to hereinafter, preferably 9% or less, more preferably 6 or less.

Further, in the present invention, in addition to the above components, HO5, Υ2〇3, and rib 2〇3 may be contained in a range that does not impair the glass properties. It must be 5% or less, and various clarifying agents should be 3% or less. For example, one or two or more kinds of metal powders such as SB2〇3, Sb2〇5, F2, Cl2, C, S〇3, Sn〇2 or Al, Si may be used. Since Asz〇3 is capable of generating a clarified gas over a wide temperature range (1300 to 17 〇{rc), such a clarifier has been widely used in the past, but since the valley contains a radioisotope in the raw material. The toxicity is still very strong, which causes environmental pollution problems in the glass manufacturing steps and the disposal of waste glass. Therefore, it must be substantial that does not contain As2〇3. Moreover, since 16 201118052 Λ ^ Λ I \-/

PbO and CdO are also highly toxic and must be avoided. Further, SB2〇3 and twins are also components having excellent clarifying effects like As2〇3, however, since they are also highly toxic, they are preferably not contained as much as possible. Accordingly, in the case of the Si〇2-A12〇3_B2〇3_R lanthanum glass of the present invention, the ratio of the /k π agent component is preferably 〇5 to 2·0. °/. The total amount of F2, Cl2, C, S〇3, and Sn〇2 is 〇. 1 〜3. 〇% (especially Cl2 is 0. 〇〇5~1. 〇%, Sn〇2 is 0. 01 〜 1. 〇%). Further, in the case of φ Si〇2-Ah〇3-B2〇3-R lanthanum glass, the ratio of SB2〇3 and Sb2〇5 is preferably 〇. 2%, in order to improve the meltability. The total amount of F2, Ch, 〇S〇3, and Sn〇2 is 〇1~3. 〇%. Further, Fez〇3 can also be used as a clarifying agent. However, in order to color the glass, the content is limited to 500 ppm or less, preferably 3 〇〇 ppm or less, more preferably 200 ppm or less. Ce02 can also be used as a clarifying agent, and in order to color the glass, the content thereof is 2% or less, preferably 1% or less, more preferably 0. M or less. Ti〇2 has the effect of improving the weatherability of the glass and lowering the high-temperature viscosity, but it is not good because of the coloring caused by the growth. However, if Fe2〇3 is less than 200, it can contain up to 5%. ZrO 2 is a component for improving weather resistance. However, since it is easy to contain a radioactive isotope, the content is 〇 2%, preferably 〇 〇 〇 5%, more preferably 5 〇〇 ppm or less. The semi-conductor-loading glass of the present invention can precisely control u, Th, Fe2〇3, Pb0, Ti〇 by having the above-mentioned basic site formation and using a molten environment in which high-purity raw materials and impurities are not easily mixed. 2. The content of Mn〇2 and Zr〇4. In particular, it affects the transmittance of ultraviolet rays in the vicinity of Fe2〇3, pb〇, 17 201118052

Ti 〇 2 and Mn 〇 2 can be individually managed at a level of 1 to wo ppm, and U and Th which cause soft mis-recording of CCD elements due to α rays are individually managed at a level of 1 to 10 ppb. In addition, the CCD is prone to soft mis-recording due to alpha rays. In the future, it is desirable that the amount of α-ray emission from the glass cover is less than 0.005 c/cm 2 · hr. In the case of CMOS, it is difficult to generate soft errors caused by α-rays, and α-rays from the glass cover. The amount of release is less than 5 c/cm2. hr can also be used. Therefore, when manufacturing a glass cover for CMOS, it is not necessary to use a high-purity raw material, and it is not necessary to reduce the mixing of U and Th during melting. Next, a method of manufacturing a glass cover for a semiconductor package in which the amount of α-ray emission is small will be described by way of an example. First, it is prepared to form a glass raw material blend having a desired composition of glass. As the glass raw material, a high-purity raw material having less impurities such as U and Th is used. More specifically, S ' uses a high-purity raw material having a content of u and Th of 5 ppb or less. It puts the blended glass raw material into a melting tank and melts it. A platinum granule (including a platinum ruthenium container) may be used for the melting tank. However, it is easy to mix platinum particles in the glass. The stomach is preferably made of at least the inner wall (the zenith, the side surface, and the bottom surface) of the melting tank, which is made of a refractory having a small amount of u and Th. . Specifically, since the oxidized refractory (for example, oxidized electroformed brick) or the quartz refractory (for example, Shi Xixin (8) is not easy to rot, and the U and Th contents are below 丨 _, u, Th direction = The amount of dissolution is low and better. Secondly, the clarification tank rides on the glass to make the glass (defoaming and de-correlation). This clarifies the fine refractory or platinum and the 'general oxidized bonfire. Very good corrosion resistance: On the reverse side, due to the presence of a large amount of radioisotopes, it must be avoided in use. However, if the oxygen storage towel is lowered, and will be 201118052 X-/

When the Th content is reduced to 1 ppm or less, it is used as an inner wall of a smelting tank, and a glass cover for semiconductor package having a small amount of α-ray emission can be produced. Thereafter, the homogenized glass was formed into a plate shape by a pull-down method to obtain a ray glass of a desired thickness. The pull-down method can be used to bribe the overflow down-draw method or the slit pull-down method. The plate-like surface thus obtained is subjected to fine-cut processing in a size of __, and is subjected to leveling processing as needed to fabricate a glass cover. The glass cover for packaging of the present invention will be described below based on examples. Fig. 1 shows a glass cover 1 for a semiconductor package of an embodiment. The glass cover 10 for a semiconductor package is a sheet glass having an i-th transmissive surface 10a and a second light-transmissive Φ i0b facing the thickness direction of the sheet, and forming the side surface 1〇c of the edge. The glass cover 10 has a size of 14 χ 16 χ〇 5 coffee i permeable surface 10 a and the second light transmitting surface 10 〇 b is a non-abrasive surface, and any of the surfaces (5) is 0.5 nm or less. Further, although the side surface 10c is omitted in the drawing, it has a flat shape. Next, the result of the evaluation test of the manufacturing method of the glass cover for semiconductor encapsulation and the performance of the description will be described. The first step of manufacturing the enamel and sheet glass is the step of making a large plate shape above the edge. As described above, it is preferable to use an overflow down-draw method to form a sheet glass excellent in surface quality. The overflow down-draw method, as shown in Fig. 2, is a kind of U-shaped material formed by the smog, so that the sleek surface 12 flows, and the smelting glass that overflows on both sides of the sulcus 11 turns into the The bottom is fused, forming a plate shape and moving downward. According to this method, since the free surface of the molten glass forms the front surface of the sheet glass, a large plate-like surface 13 excellent in smoothness can be obtained. Further, by controlling the conditional spot forming 19 201118052^, it is possible to easily form a large plate glass having a thickness of 0·05 to 0·7 legs and a surface roughness (Ra) of less than 1. According to this, it is possible to produce a glass cover for semiconductor packaging which does not need to be polished to the surface of the large plate glass 13 and is subjected to fine cutting only by a predetermined size. The fine cutting method of the large plate glass can be mechanical cutting or laser cutting. Laser cutting first uses a hot-processed laser cutting device to move the laser beam at a speed of 5 mm/sec or 220 ± 5 mm/sec on one side of a large piece of sheet glass, with a laser output of 120 ± 5 W. , or a condition of 160 ± 5W 'cutting to about 2% thickness in the direction of the plate thickness, processed into a checkerboard eye shape. Next, as shown in the concept of FIG. 3, the machined surface 13a of the bulk plate glass 13 is moved from the opposite side in the moving direction μ by the metal wire head 14 while being processed by the large plate glass 13. The surface i3a side is pressed by a mold (not shown), and stress is applied to the processed surface 13 &amp; of the large-sized plate 13 to perform cutting. When the cutting is performed in this manner, a sheet-shaped glass having a short book shape which is divided along a predetermined line formed in the shape of the checkerboard eye is obtained. The plate glass for cutting the two short strips of glass is then pressed, and the vacuum clamp (not shown) is separately transported to the next step. Then, the short strip-shaped plate glass is again subjected to cutting processing to obtain a glass cover having a certain size. ° Table 1 shows an example (sample Nos. 1 to 5) of the cover glass cover of the present invention comprising SiOz-AhOsHRO-based glass. 20 201118052 xjx Table 1 (% by mass)

Sample No Composition 1 2 3 4 5 Si02 59.0 63.0 58.0 59.0 59.0 Al2〇3 15.0 16.0 16.0 15.0 17.0 B2〇3 10.0 10.0 8.0 10.0 8.0 MgO — —— 1.0 1.0 3.0 CaO 6.0 8.0 4.0 5.0 4.0 SrO 5.0 1.0 2.0 3.0 8.0 BaO 3.0 1.0 10.0 6.0 —— ZnO 1.0 —————————— Na2〇一———————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————— Amount of alkali elution (mg) &lt;0.01 &lt;0.01 &lt;0.01 &lt;0.01 &lt;0.01 Density (g/cm3) 2.49 2.38 2.55 2.49 2.51 Poplar rate (Gpa) 77 70 70 68 77 Ratio of poplar (Gpa/g* Cm3) 28 29 27 27 31 Vickers hardness 600 580 590 570 610 Thermal expansion coefficient [30-380. . ] (xlO'7/°C) 38 33 37 37 37 Liquidus temperature (°C) 1065 1105 1030 1055 1130 Liquid viscosity (dPa _ s) 6.0 6.0 6.7 6.1 5.2 α-ray emission (c/cm2 · hr) 0.0076 0.0035 0.0156 0.0108 0.0075 21 201118052 L/ The glass samples of Table 1 were prepared as follows. First, the high-purity glass raw material prepared as shown in Table 1 was placed in a platinum crucible pin, and melted in an electric melting furnace having a disturbing function at 1600 ° C for 20 hours. Next, the molten glass was discharged on a carbon plate and quenched to prepare a glass sample, and various characteristics were investigated. As shown in Table 1, the amount of alkali elution is very small regardless of the glass, and the density, Young's ratio, specific Young's ratio, Vickers hardness, and thermal expansion coefficient can satisfy the conditions required for the glass cover for semiconductor packaging. Moreover, since the liquidus temperature is below 113 (TC, the liquidus viscosity is 1 〇 5.2 dpa · s or more), the loss of transparency is excellent. Table 2 3 shows that Si〇2~Al2〇3-B2〇3-R2〇 An example of the glass cover for packaging of the present invention formed of glass (samples Να 6 to 17).

22 201118052 1 j ιηυριι-χ!) Table (% by mass)

Sample No Composition 6 7 8 9 10 11 Si02 68.8 65.8 68.4 68.3 68.8 67.8 Al2〇3 7.0 8.0 5_2 7.5 7.0 8.0 Εί2〇3 13.1 13.1 1.09 13.1 13.1 13.1 13.1 MgO a 0.4 _ I_CaO 2.2 0.6 3.2 A 0.6 0.6 SrO A— — 一—— ElaO _ — __ 一一— Z; nO 一 1.2 0.9 —— —— —— Na2〇6.7 8.6 5.6 8.9 6.7 8.6 K:20 1.9 2.0 5.7 1.9 3.5 1.6 Li20 — I—————————— — T1O2 一一一———————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————— __ _ — Fs2〇3 30ppm 30ppm 30ppm 30ppm 30ppm 30ppm υ (ppb) 4 Not measured Not measured Not measured Not measured 4 Th(ppb) 2 Not measured Not measured Not measured Not measured 2 Thermal expansion coefficient (&gt;: 10'7/ °C) 55.8 62.8 64.9 62.0 59.0 60.4 Density (g/cm3) 2.35 2.37 2.42 2.36 2.35 2.35 Viscosity strain point 0:) 535 517 536 518 514 520 Xu cold spot (°c) 571 554 576 561 558 561 Softening point (° c) 765 743 760 755 760 754 104 (°C) 1119 1091 1093 1077 1102 1087 103(°C) 1345 1301 1292 1282 1316 1300 ιο2·5Γ〇1500 1456 14:54 1434 1471 1455 Liquid temperature (°c) 884 728 882 817 822 No loss of transparent liquid viscosity (dPa.s) 5.9 7.9 5.8 6.6 6.6 No loss of transparency 23 201118052 α-ray emission amount 0.0020 0.0022 0.0021 0.0021 0.0020 0.0021 (c/cm2 * hr) 24 201118052 Table (% by mass)

Sample No composition 12 13 14 159 16 17 Si02 66.5 68.8 6(5.8 65.8 66.9 68.3 AI2O3 8.0 7.0 7.0 8.0 7.5 7.0 B2〇3 13.1 12.0 1:U 13.1 13.1 13.1 MgO — _ 一—一—— CaO 0.6 2.2 2.2 0.6 2.2 0.6 SrO — ——— — 1 0.8 BaO — I — — 0.8 ZnO 1.6 I — —————— Na2〇7.9 6.7 8.6 8.6 6.2 6.7 K20 2.0 3.0 2.0 2.0 3.0 2.4 u20 — 11— — 0.5 — T1O2 1.6 Sb203 0.3 0.3 0,3 0.3 ———— Cl — ——— — 0.2 — Sn〇2 0.3 0.3 s〇3 — —— —— —— —— lOOpprn Fe2〇3 30ppm 30ppm 30ppm lOppm 30ppm 30ppm U(ppb) Not measured not measured 4 4 Not measured Unmeasured Th(ppb) Not measured Not measured 2 2 Unmeasured unmeasured coefficient of thermal expansion (χ10'7/°〇59.9 59.1 62.8 61.4 60.6 55.8 Density (g /cm3) 2.36 2.37 2_:!9 2.36 2.36 2.33 Viscosity strain point (°〇509 531 530 510 527 521 Xu cold point (.〇552 574 568 552 568 561 Softening point (°c) 752 764 745 744 759 761 104( °C) 1106 1117 1059 1086 1095 1109 l〇3 (°C) 1331 1341 1261 1306 1306 1333 102·5(°〇1483 1494 1401 1461 1454 1486 Liquid phase temperature ro without loss of transparency 867 855 822 842 853 Liquid viscosity (dPa s) No loss of transparency 6.1 5.9 6.4 6.3 6.2 25 201118052 α-ray emission Amount (c/cm2.hr) 0.0021 0.0021 0.0021 0.0021 0·0023~ 0.0030 ---- Each of the glass samples in Tables 2 and 3 was produced as follows. First, the high-purity glass-making raw material prepared by the composition in the table is put into a hanging pin made of one of Minghao, Oxidation, and Quartz in an electric melting furnace with a stirring function at a temperature of 1550 degrees Celsius for 6 hours. Melting ^ and flowing the molten glass on the carbon plate, and cooling the plate glass to obtain a glass as clearly shown in the table, each glass sample satisfies the requirements of the thermal expansion coefficient, density, and α-ray emission amount to satisfy the glass cover for the semiconductor. And since the viscosity of 1〇25 5Pa·s is 150 (the melting property is excellent below rc, the liquidus viscosity is 105·8 dPa. s or more is excellent in loss of transparency.

Further, the amount of alkali elution in the table is measured based on JIS R3502. Density is measured by the well-known Archimedes method. Young's rate calculates the Young's ratio and density measured by the resonance method using a non-destructive measuring device (KI-11). The Vickers hardness is measured based on JIS Z2244-1992. The coefficient of thermal expansion is measured using the expansion § ten to measure 30 to 380. (: The average coefficient of thermal expansion in the temperature range. The liquid phase/m degree system will be pulverized to a particle size of 3〇〇~5〇〇#m, placed in a platinum ship, and kept in a temperature matching furnace. In the hour, the observation was made with a microscope, and the highest temperature at which the inside of the glass sample lost transparency (crystal foreign matter) was measured, and this temperature was taken as the liquidus temperature. Moreover, the viscosity of the glass at the liquidus temperature was taken as the liquidus viscosity. No. The glass sample of 12 does not lose transparency, especially has excellent resistance to loss of transparency. The content of U and Th is measured by ICP-MASS. Moreover, the strain point and the cold point are based on ASTM 26 201118052 C336- According to the method of 71, the softening point is measured according to the method of (2) 祁-(10) 104 dPa · S, 1 〇 3 dPa · S and 1 〇 2.5 dPa. S, which is obtained by the well-known platinum ball rising method. 1 02 5 dPa · S temperature is measured at a high temperature viscosity of 102 5 &gt; white equivalent temperature, the lower the value, the better the meltability. The α-ray emission amount is measured using an ultra-low-grade α-ray measuring device (LACS-400M manufactured by Sumitomo Chemical Co., Ltd.). Take measurements. And 'will be the first of Tables 1~3 The glaze samples of Να 1, 6, 11, 14 and 15 were melted in an experimental melting tank (alumina refractory), and formed into a plate shape having a thickness of 0.5 _ by an overflow down-draw method, and the surface thereof was not ground and cut by laser. Fine-cutting was performed to produce a glass cover with a vertical dimension of 14 mm and a horizontal dimension of 16 mm. Moreover, for comparison, the raw material of the glass constituting sample No. 1 was dissolved in the above-mentioned experimental melting tank to be 800 x 300 x 300 mm. The size is cast and formed, and is cut into a plate shape having a thickness of 1, 5 faces by cutting with a wire saw. Thereafter, both sides of the plate glass are subjected to precision grinding processing by a rotary grinder to form a large plate glass ( The thickness of the surface is 0.5, and the glass cover with a vertical dimension of 14 mm and a horizontal dimension of 16 mm is produced by laser cutting. The light-transmissive surface of the front surface of each glass cover (the first light-transmitting surface and Surface roughness (Ra) of the second light-transmitting surface)

Talystep (manufactured by Tayler-Hobson Co., Ltd.) was measured, and the results are shown in Table 4. 27 201118052^ Table 4 Sample No. 1 6 11 14 15 Comparative surface roughness (Ra) 1st light transmission surface 2nd light transmission surface 1 · 1 5nm 〇.20nm 0.20 nm 0.15 nm 0.23 nm 0.19 nm 0.20 nm 0.18 nm 0.18nm 0.16 nm 0.56 nm 0.95 nm

As clearly shown in Table 4, the glass cover of the example has an extremely good smooth surface regardless of the surface roughness (Ra) of the first light transmitting surface or the second light transmitting surface of 0.23 nm or less. The glass surface has a surface roughness (Ra) of 0.556 or more, even if it is subjected to precision grinding. Further, the glass-transparent surface of each of the glass and the cover was observed by an atomic force microscope (AFM), and the glass cover of the comparative example was formed with minute scratches on the entire surface thereof, and the glass cover of the example was found to have no such flaw. Production _ industry can use 枓

The glass cover for the glass cover is suitable for the glass cover for solid-state imaging device packaging. = Use ==::·; Extremely various semiconductor seals = 3°~8_Vc, ~ except 8 === for various packages, can be made of organic resin or two [Simple description] 28 201118052

Fig. 1 is a perspective view showing a glass cover for a semiconductor package of an embodiment. Fig. 2 is an explanatory view showing a method of forming a sheet glass using an overflow down-draw method. Figure 3 illustrates a method of finely cutting a large sheet of glass using laser cutting. [Description of Patterns] 10: Glass cover for semiconductor packaging, IGA: First light-transmissive surface 10b: Second light-transmissive surface 10c: Side surface 11: Trench 12: Molten glass 13: Large-plate glass 13a: Machined surface 14: Line head # Μ : Action direction 29

Claims (1)

201118052 VII. Patent application scope: A glass enamel for semiconductor packaging is characterized by having a light-transmissive surface without a polished surface, and the surface roughness (Ra) is 1. Onm or less, and has a mass% containing &quot;Si〇2 52~7〇%, Ah〇3 5~2〇%, secret 5~2〇%, alkaline earth metal oxide 4~30%, ZnO 0~5% basic composition, and substantially no alkali metal oxide. A glass lid for a semiconductor package as described in claim 1 is characterized in that it is formed by a down-draw method or a float method. The glass cover for semiconductor package described in the second aspect of the invention is characterized in that the pull-down method is an overflow down-draw method. 4. The glass lid for a semiconductor package according to claim 1, wherein the glass viscosity at a liquidus temperature is 105.2 dpa.s or more. A glass cover for a semiconductor package according to claim 1, wherein the temperature is in the range of 30 to 380 degrees. (3's average heat ^ 3〇~85xl〇-V&gt;c. The number of songs you have two-b. The semiconductor package package according to claim 1 is characterized in that the amount of α-ray emission is 〇.〇1 c /cm2 · hr or less. 7 The glass crucible for semiconductor encapsulation according to the invention of claim i, wherein the amount of alkali elution is 1 () mg or less. 5毫米。 The thickness of the film is 0. 05~0. 7 mm. The glass cover for semiconductor package according to the first aspect of the invention is characterized in that a package containing a solid-state imaging element is used. 11. The glass cover for a semiconductor package according to claim 1, wherein the package is provided with a laser diode. 31