JP3506237B2 - Cover glass for solid-state imaging device - Google Patents

Cover glass for solid-state imaging device

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Publication number
JP3506237B2
JP3506237B2 JP2000319977A JP2000319977A JP3506237B2 JP 3506237 B2 JP3506237 B2 JP 3506237B2 JP 2000319977 A JP2000319977 A JP 2000319977A JP 2000319977 A JP2000319977 A JP 2000319977A JP 3506237 B2 JP3506237 B2 JP 3506237B2
Authority
JP
Japan
Prior art keywords
glass
solid
state imaging
imaging device
rays
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000319977A
Other languages
Japanese (ja)
Other versions
JP2001185710A (en
Inventor
裕樹 永井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Electric Glass Co Ltd
Original Assignee
Nippon Electric Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Glass Co Ltd filed Critical Nippon Electric Glass Co Ltd
Priority to JP2000319977A priority Critical patent/JP3506237B2/en
Publication of JP2001185710A publication Critical patent/JP2001185710A/en
Application granted granted Critical
Publication of JP3506237B2 publication Critical patent/JP3506237B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Glass Compositions (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Description

【発明の詳細な説明】 【0001】 【産業上の利用分野】本発明は、CCDと呼ばれる固体
撮像素子を収容するアルミナなどのセラミックパッケー
ジの窓ガラスとして使用される固体撮像素子用カバーガ
ラスに関し、特に固体撮像素子の機能低下を抑えること
が可能なカバーガラスに関するものである。 【0002】 【従来の技術】従来より固体撮像装置の一種として、ア
ルミナなどのセラミックパッケージ内にCCDなどの固
体撮像素子を搭載し、窓ガラスとしての機能をもつカバ
ーガラスをセラミックパッケージの外表面に封着するこ
とによって、固体撮像素子を収納した電子部品が広く使
用されている。 【0003】固体撮像素子は、半導体ICと同様に、シ
リコンの基板上に微細な受光素子を多数集積したもので
あり、光信号を素子に取り込む必要があるため、固体撮
像装置のカバーガラスには、高い光透過特性を有し、固
体撮像素子の機能を損なわせないことが要求される。 【0004】一般にこの種のカバーガラスの材質として
は、ホウケイ酸ガラスや無アルカリガラスが用いられて
いるが、これらのホウケイ酸ガラスや無アルカリガラス
は、α線放射量が大きく、しかもカバーガラスは、素子
に対面するように取り付けられるため、そこから放射さ
れるα線は、素子に対して大きな悪影響を与える。 【0005】すなわちカバーガラスからα線が放射さ
れ、これが固体撮像素子に入射すると、α線のエネルギ
ーによって正孔・電子対が誘起され、これが原因となっ
て瞬間的に画像に輝点や白点を生じさせる、所謂ソフト
エラーと呼ばれる現象が発生する。 【0006】特に近年、単位面積当りの画素数の増大に
よる高精度化が進められるに従い、素子がますます微細
になり、α線の影響が一層顕著に現れるようになってき
ており、そのためウラン(U)やトリウム(Th)など
の放射性同位元素を少なくすることによってα線放射量
を少なくしたカバーガラスの開発が試みられている。 【0007】 【発明が解決しようとする課題】ところが固体撮像素子
の高精度化に伴い、α線以外にも、β線の撮像素子に対
する影響も問題となりつつある。すなわちβ線は、α線
に比べて透過性が強いため、撮像素子への影響は微弱で
あるが、これによっても素子の機能が損なわれる可能性
が出てきた。従ってこの種のガラスには、β線の放射量
が少ないことも要求されている。 【0008】本発明の目的は、α線とβ線の放射量の少
ない固体撮像素子用カバーガラスを提供することであ
る。 【0009】 【課題を解決するための手段】本発明者は、上記の目的
を達成すべく、種々の実験を重ねた結果、従来のホウケ
イ酸ガラスからなる固体撮像素子用カバーガラスには、
溶融を促進する目的でK2Oが含有されているが、この
成分がβ線の放射の主因となっていることを見いだし、
本発明を提案するに至った。 【0010】すなわち本発明の固体撮像素子用カバーガ
ラスは、ガラス中に含有されるウラン(U)、トリウム
(Th)の量が、各々50ppb以下で、本質的にK2
Oを含有しないホウケイ酸ガラスからなり、β線放射量
が、5×10-6μCi/cm 2以下であることを特徴と
する。 【0011】 【作用】ガラスのβ線発生の主因は、β崩壊する同位体
を有する成分であり、これを一定値以下に抑えれば、β
線の放射量を少なくすることが可能である。カリウムの
原料は、Kの放射性同位元素である40Kを有しており、
これがβ線放射の原因となるため、K2Oを本質的に含
有しなければ、β線放射量を5×10-6μCi/cm2
以下に抑えることが可能となる。 【0012】因に、本質的にK2Oを含有しないという
意味は、意識的にK2Oが含有されていないということ
であり、不純物として微量混入する程度の量であれば所
期の目的を達成することが可能である。 【0013】また先記したようにα線の主因は、ガラス
中のUとThであり、本発明者の知見によると、UとT
hの量を各々50ppb以下に規制すると、α線の放射
量が十分に少なくなるため、α線による固体撮像素子の
ソフトエラーや永久損傷を防ぐことができる。 【0014】ガラス中のUやThの量を少なくするに
は、これらを多く含む原料を使用しないことが必要であ
り、ジルコニア原料がこれに相当するため、ZrO2
含有しない方が良い。またジルコニア原料ほどではない
が、バリウム原料にもUとThが含まれているため、B
aOも極力含まないことが望ましく、例え含有させる場
合でも、原料として高純度品を使用することが必要であ
る。さらに他の原料についても、高純度品を選定するこ
とが望ましく、しかも溶融時や加工時におけるU、Th
の混入も避けることが必要である。 【0015】本発明の固体撮像素子用カバーガラスは、
ホウケイ酸ガラスからなるため、熱膨張係数をアルミナ
セラミックのそれに近似させることができ、しかも耐候
性が良好で、透明性が損なわれ難いという長所を有す
る。 【0016】尚、ホウケイ酸ガラスとは、SiO2とB2
3を主成分とするガラスのことであり、一般にSiO2
40〜90重量%、B23 1〜50重量%、Al2
30〜30重量%、アルカリ金属酸化物 0〜30重
量%、アルカリ土類金属酸化物 0〜30重量%及び各
種清澄剤等から構成される。 【0017】 【実施例】以下、本発明の固体撮像素子用カバーガラス
を実施例に基づき詳細に説明する。 【0018】表1、2は、本発明の実施例(試料No.
1〜8)と、比較例(試料No.9〜11)のガラスを
示すものである。 【0019】 【表1】【0020】 【表2】 【0021】表のNo.1〜11の各試料は、次のよう
にして調製した。 【0022】まず表に示す組成のガラスとなるように調
合したガラス原料を白金ルツボに入れ、電気炉内で15
00℃、5時間の条件で溶融した後、この溶融ガラスを
グラファイト上に流し出し、次いで徐冷炉内で除歪し
た。 【0023】こうして作製した各試料について、α線と
β線の放射量を測定し、その値を表に示した。 【0024】表から明らかなように実施例であるNo.
1〜8の各試料は、K2Oを含有しないため、β線放射
量が、4×10-6μCi/cm2以下と少なく、しかも
不純物であるUとThの量が、各々50ppb以下であ
るため、α線放射量も0.009C/cm2・hr.以
下と少なかった。 【0025】それに対して比較例であるNo.9とN
o.10の試料は、β線放射量が、各々9×10-6μC
i/cm2と6×10-6μCi/cm2と多かった。また
No.11の試料は、β線放射量が、6×10-6μCi
/cm2と多く、しかもUとThの量が多いため、α線
放射量も0.05C/cm2・hr.と多かった。 【0026】尚、表中のUとThの量は、ICP(誘導
結合高周波プラズマ)分析によって求めたものであり、
またα線とβ線の放射量は、ガスフロー比例計数管測定
装置を用いて測定した。 【0027】 【発明の効果】以上のように本発明の固体撮像素子用カ
バーガラスは、α線とβ線の放射量が少ないため、α線
やβ線によって素子にソフトエラーが発生することがな
い。
DETAILED DESCRIPTION OF THE INVENTION [0001] BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state device called a CCD.
Ceramic package such as alumina to house the image sensor
Cover for solid-state imaging device used as window glass
Regarding glass, in particular, to suppress functional deterioration of solid-state imaging devices
In which a cover glass is possible. [0002] 2. Description of the Related Art Conventionally, as a kind of solid-state imaging device, a
A fixed device such as a CCD is
Cover that has a body image sensor and functions as a window glass
-Seal the glass on the outer surface of the ceramic package.
Electronic components containing solid-state image sensors
Have been used. [0003] Solid-state imaging devices are similar to semiconductor ICs.
A large number of fine light receiving elements are integrated on a recon substrate.
There is a need to capture optical signals
The cover glass of the imaging device has high light transmission characteristics,
It is required not to impair the function of the body imaging device. [0004] Generally, as a material of this kind of cover glass,
Uses borosilicate glass or alkali-free glass
But these borosilicate glass and alkali-free glass
Has a large amount of α-ray emission, and the cover glass is
Is mounted so that it radiates from
Α-rays have a great adverse effect on the device. That is, α rays are emitted from the cover glass.
When this enters the solid-state image sensor, the energy of α-rays
Hole-electron pairs are induced by the
So-called software that instantaneously produces bright spots and white spots on images
A phenomenon called an error occurs. Particularly, in recent years, the number of pixels per unit area has increased.
With the advancement of higher precision, the elements become increasingly finer
And the effects of α-rays have become more pronounced
Uranium (U) and thorium (Th)
Α-ray irradiance by reducing radioactive isotopes
Attempts have been made to develop a cover glass with reduced noise. [0007] However, a solid-state image pickup device
In addition to α rays, β-ray imaging devices
Impacts are also becoming a problem. That is, β rays are α rays
Since the transmission is stronger than that of
However, this may also impair the function of the element
Came out. Therefore, this kind of glass has an
Is also required to be low. An object of the present invention is to reduce the amount of radiation of α-rays and β-rays.
To provide a cover glass for solid-state imaging devices.
You. [0009] SUMMARY OF THE INVENTION The present inventor has set forth the above object.
As a result of repeated experiments in order to achieve
The cover glass for a solid-state imaging device made of silicate glass includes
K to promote meltingTwoO is contained.
Component is the main cause of beta radiation,
The present invention has been proposed. That is, a cover cover for a solid-state imaging device according to the present invention.
Lass contains uranium (U), thorium contained in glass
The amount of (Th) is less than 50 ppb each, essentially KTwo
Made of borosilicate glass that does not contain O and emits β-rays
But 5 × 10-6μCi / cm TwoIt is characterized by the following
I do. [0011] [Action] The main cause of β-ray generation in glass is β-decaying isotopes
Component, and if this is kept below a certain value, β
It is possible to reduce the radiation of the line. Potassium
The raw material is a radioactive isotope of K40K
Since this causes β-ray emission, KTwoEssentially contains O
If not, the β-ray emission amount is 5 × 10-6μCi / cmTwo
It is possible to keep it below. By the way, essentially KTwoDoes not contain O
The meaning is consciously KTwoO is not contained
If the amount is small enough to be mixed as impurities,
It is possible to achieve the objectives of the period. As mentioned above, the main cause of α-rays is glass
U and Th in the graph, and according to the findings of the present inventors, U and T
When the amount of h is regulated to 50 ppb or less, α-ray emission
Since the amount is sufficiently small, the solid-state imaging device
Soft errors and permanent damage can be prevented. To reduce the amount of U and Th in glass
Must not use raw materials that contain
Zirconia raw material is equivalent to this, ZrOTwoIs
It is better not to contain. Not as good as zirconia raw materials
However, since the barium raw material also contains U and Th, B
It is desirable that aO is not contained as much as possible.
In such cases, it is necessary to use high-purity products as raw materials.
You. For other raw materials, select high-purity products.
And U and Th during melting and processing.
It is necessary to avoid contamination. The cover glass for a solid-state imaging device according to the present invention comprises:
Since it is made of borosilicate glass, its thermal expansion coefficient
It can be approximated to that of ceramics, and is weather resistant
It has the advantage of good transparency and transparency is not easily impaired
You. The borosilicate glass is SiO 2TwoAnd BTwo
OThreeIs a glass mainly composed ofTwo
  40 to 90% by weight, BTwoOThree  1 to 50% by weight, AlTwo
OThree0 to 30% by weight, alkali metal oxide 0 to 30 weight
%, Alkaline earth metal oxides 0 to 30% by weight and each
It is composed of a seed fining agent and the like. [0017] DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a cover glass for a solid-state imaging device according to the present invention.
Will be described in detail based on examples. Tables 1 and 2 show examples (sample Nos.) Of the present invention.
1 to 8) and the glass of Comparative Example (Sample Nos. 9 to 11)
It is shown. [0019] [Table 1][0020] [Table 2] No. in the table. The samples 1 to 11 are as follows:
Was prepared. First, the glass was adjusted to have the composition shown in the table.
Put the combined glass materials into a platinum crucible and place in an electric furnace for 15 minutes.
After melting at 00 ° C for 5 hours, this molten glass was
Pour out on graphite, then remove strain in annealing furnace
Was. For each sample thus produced,
The radiation dose of β-rays was measured and the values are shown in the table. As is clear from the table, No. 1 of the embodiment was used.
Each of samples 1 to 8 has a KTwoΒ-ray emission because it does not contain O
Quantity 4 × 10-6μCi / cmTwoLess, and
The amounts of impurities U and Th are each 50 ppb or less.
Therefore, the amount of α-ray radiation is also 0.009 C / cmTwo-Hr. Less than
There was little below. On the other hand, the comparative example No. 9 and N
o. 10 samples had a β-ray emission of 9 × 10-6μC
i / cmTwoAnd 6 × 10-6μCi / cmTwoThere were many. Also
No. 11 samples had a β-ray emission of 6 × 10-6μCi
/ CmTwoAnd the amount of U and Th is large,
The radiation amount is 0.05C / cmTwo-Hr. There were many. The amounts of U and Th in the table are based on ICP (induction
Coupled RF plasma) analysis,
The amount of radiation of α-rays and β-rays is measured by a gas flow proportional counter.
It measured using the apparatus. [0027] As described above, the solid-state imaging device according to the present invention has
Bar glass has low emission of α-rays and β-rays.
And β rays do not cause soft errors in the device.
No.

Claims (1)

(57)【特許請求の範囲】 【請求項1】 ガラス中に含有されるウラン(U)、ト
リウム(Th)の量が、各々50ppb以下で、本質的
にK2Oを含有しないホウケイ酸ガラスからなり、β線
放射量が、5×10-6μCi/cm2以下であることを
特徴とする固体撮像素子用カバーガラス。
(57) Claims 1. Borosilicate glass containing 50 ppb or less of uranium (U) and thorium (Th) in a glass and containing essentially no K 2 O A cover glass for a solid-state imaging device, characterized in that the radiation amount of β-ray is 5 × 10 −6 μCi / cm 2 or less.
JP2000319977A 2000-10-19 2000-10-19 Cover glass for solid-state imaging device Expired - Fee Related JP3506237B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000319977A JP3506237B2 (en) 2000-10-19 2000-10-19 Cover glass for solid-state imaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000319977A JP3506237B2 (en) 2000-10-19 2000-10-19 Cover glass for solid-state imaging device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP6026011A Division JPH07215734A (en) 1994-01-28 1994-01-28 Cover glass for solid-state image pickup element

Publications (2)

Publication Number Publication Date
JP2001185710A JP2001185710A (en) 2001-07-06
JP3506237B2 true JP3506237B2 (en) 2004-03-15

Family

ID=18798334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000319977A Expired - Fee Related JP3506237B2 (en) 2000-10-19 2000-10-19 Cover glass for solid-state imaging device

Country Status (1)

Country Link
JP (1) JP3506237B2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4432110B2 (en) * 2003-02-19 2010-03-17 日本電気硝子株式会社 Cover glass for semiconductor packages
JP2005008509A (en) * 2003-05-29 2005-01-13 Nippon Electric Glass Co Ltd Cover glass for optical semiconductor package, and its production method
JP2006076871A (en) * 2003-12-26 2006-03-23 Nippon Electric Glass Co Ltd Production apparatus for borosilicate sheet glass article, production process therefor and borosilicate sheet glass article
JP5467538B2 (en) * 2005-05-10 2014-04-09 日本電気硝子株式会社 Glass substrate for semiconductor device and chip scale package using the same
DE102005052421A1 (en) * 2005-11-03 2007-05-16 Schott Ag Method for producing cover glasses for radiation-sensitive sensors and apparatus for carrying out the method
DE102005052420A1 (en) * 2005-11-03 2007-05-10 Schott Ag Low-radiation cover glasses and their use
DE102008011665A1 (en) 2008-02-28 2009-09-10 Schott Ag Method for controlling alpha-radiation in cover glass for radiation-sensitive sensors, involves determining concentrations of uranium and thorium

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