JP3090174B2 - Low radiation glass - Google Patents

Low radiation glass

Info

Publication number
JP3090174B2
JP3090174B2 JP04361428A JP36142892A JP3090174B2 JP 3090174 B2 JP3090174 B2 JP 3090174B2 JP 04361428 A JP04361428 A JP 04361428A JP 36142892 A JP36142892 A JP 36142892A JP 3090174 B2 JP3090174 B2 JP 3090174B2
Authority
JP
Japan
Prior art keywords
glass
radiation
solid
state imaging
low radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP04361428A
Other languages
Japanese (ja)
Other versions
JPH06211539A (en
Inventor
卓弘 小野田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Electric Glass Co Ltd
Original Assignee
Nippon Electric Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Glass Co Ltd filed Critical Nippon Electric Glass Co Ltd
Priority to JP04361428A priority Critical patent/JP3090174B2/en
Publication of JPH06211539A publication Critical patent/JPH06211539A/en
Application granted granted Critical
Publication of JP3090174B2 publication Critical patent/JP3090174B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Glass Compositions (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、CCDなどの固体撮像
素子を収納するアルミナなどのセラミックパッケージの
窓ガラスとして使用されるカバーガラスに関し、特にソ
フトエラーや素子に損傷を与えることが少ない固体撮像
素子用カバ−ガラスに関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cover glass used as a window glass of a ceramic package such as alumina for accommodating a solid-state imaging device such as a CCD, and more particularly, to a solid-state imaging device which hardly causes soft errors and damages the device. The present invention relates to a cover glass for an element.

【0002】[0002]

【従来の技術】従来より固体撮像装置として、アルミナ
などのセラミックパッケ−ジ内にCCDなどの固体撮像
素子を取り付け、窓ガラスとしての機能をもつカバ−ガ
ラスをセラミックパッケージに封着し、固体撮像素子を
収納した構造のものが広く使用されている。
2. Description of the Related Art Conventionally, as a solid-state imaging device, a solid-state imaging device such as a CCD is mounted in a ceramic package such as alumina, and a cover glass having a function as a window glass is sealed in a ceramic package. Those having a structure in which elements are housed are widely used.

【0003】固体撮像素子は、半導体ICと同様にシリ
コンの基板上に微細な受光素子を多数集積したものであ
るが、固体撮像管素子周辺部のパッケ−ジあるいはガラ
スに起因して発生する放射線がこれらの受光素子に入射
すると、放射線のエネルギ−によって正孔・電子対が誘
起され、これが原因となって瞬間的に画像に輝点や白点
を生じさせるいわゆるソフトエラーと呼ばれる問題が生
じることが、日経エレクトロニクス(1979.8.6
号、58〜72頁)に記載されている。またソフトエラ
ーの問題以外に、放射線の入射によって素子に永久損傷
が発生し、暗信号時に白点が生じるといった問題が起こ
る場合もある。
A solid-state image sensor is a device in which a number of fine light-receiving elements are integrated on a silicon substrate like a semiconductor IC. Radiation generated due to a package or glass around the solid-state image sensor is used. Is incident on these light-receiving elements, a hole-electron pair is induced by the energy of radiation, and this causes a problem called a so-called soft error that instantaneously causes a bright spot or a white spot on an image. Is Nikkei Electronics (1979.8.6
No. 58-72). In addition to the problem of the soft error, there is a case where the incident of the radiation causes a permanent damage to the element and a problem such that a white spot occurs at the time of a dark signal.

【0004】固体撮像装置は、光信号を素子に取り込む
必要があるので、パッケージには必ず窓ガラスとしての
カバーガラスが封着され、この種のカバーガラスの材質
としては、耐候性に優れ、曇りが発生しにくいホウケイ
酸ガラスや無アルカリバリウムケイ酸ガラスが用いられ
ている。
In a solid-state image pickup device, since it is necessary to take an optical signal into an element, a cover glass as a window glass is always sealed in a package, and the material of this kind of cover glass is excellent in weather resistance and fogging. Borosilicate glass or alkali-free barium silicate glass, which is less likely to cause odor, is used.

【0005】しかしながら、これらのホウケイ酸ガラス
や無アルカリバリウムケイ酸ガラスは、放射線量が大き
く、しかもカバーガラスは素子に対面するように取り付
けられるため、そこから放射される放射線は素子に対し
て大きな影響を与える。
However, these borosilicate glass and alkali-free barium silicate glass have a large radiation dose, and the cover glass is mounted so as to face the element, so that radiation radiated therefrom is large for the element. Affect.

【0006】特に近年、単位面積当たりの画素数の増大
による高精度化が進められるに従い、素子がますます微
細になり、そのため放射線の影響が一層顕著に現れるよ
うになってきている。
Particularly, in recent years, as the precision has been improved by increasing the number of pixels per unit area, the elements have become finer and finer, so that the influence of radiation has become more noticeable.

【0007】このような事情から、カバーガラスから発
生する放射線の対策が各種試みられており、例えば特開
平1−173639号公報には、カバーガラスに高純度
石英ガラスを使用すること、また特開平3−74874
号公報には、素子上に鉛を含むシリケートガラス薄膜を
形成して放射線を遮蔽することが提案されている。
[0007] Under such circumstances, various countermeasures against radiation generated from the cover glass have been attempted. For example, Japanese Patent Application Laid-Open No. 1-173639 discloses that high-purity quartz glass is used for the cover glass, 3-74874
Japanese Patent Application Laid-Open Publication No. H11-163873 proposes that a silicate glass thin film containing lead is formed on an element to shield radiation.

【0008】[0008]

【発明が解決しようとする課題】しかしながら特開平1
−173639号公報では、カバ−ガラスに高純度石英
ガラスを用い、さらにセラミックパッケ−ジの熱膨張係
数を高純度石英ガラスの熱膨張係数と固体撮像素子の熱
膨張係数の中間の値にすることが提案されているが、高
純度石英ガラスは、非常に高価であり、且つ、アルミナ
以外の特殊なパッケージを採用する必要があるため,固
体撮像装置の低コスト化が困難となる。
SUMMARY OF THE INVENTION However, Japanese Patent Laid-Open No.
In Japanese Patent No. 173636, high-purity quartz glass is used for the cover glass, and the thermal expansion coefficient of the ceramic package is set to an intermediate value between the thermal expansion coefficient of the high-purity silica glass and the thermal expansion coefficient of the solid-state imaging device. However, high-purity quartz glass is very expensive and requires the use of a special package other than alumina, which makes it difficult to reduce the cost of the solid-state imaging device.

【0009】また特開平3−74874号公報では、セ
ンサー部に鉛を含むシリケートガラス薄膜を形成して放
射線を遮蔽することが提案されているが、膜付けのため
のプロセス工程が増加するとともに、放射線を遮蔽する
にはかなりの厚みをもつ膜が必要となるため膜付け工程
に長時間を要する。
Japanese Patent Application Laid-Open No. 3-74874 discloses that a silicate glass thin film containing lead is formed in a sensor portion to shield radiation, but the number of process steps for film formation is increased, In order to shield radiation, a film having a considerable thickness is required, so that a long time is required for the film forming process.

【0010】本発明は、このような従来の問題点に鑑み
なされたものであり、その目的とするところは、固体撮
像装置のカバーガラスとして用いた場合、膜付けしなく
とも、放射線量が少ないため、固体撮像素子にソフトエ
ラーを発生させたり、永久損傷を発生させることがない
低放射線ガラスを提供することである。
The present invention has been made in view of such conventional problems, and has as its object to reduce the radiation dose even when a film is not formed when used as a cover glass of a solid-state imaging device. Accordingly, an object of the present invention is to provide a low radiation glass that does not cause a soft error or permanent damage to a solid-state imaging device.

【0011】さらに本発明の他の目的は、熱膨張係数を
アルミナセラミックのそれに近似させることが可能であ
り、従来と同じセラミックパッケージを用いることがで
きるため、安価で、製造が容易である低放射線ガラスを
提供することである。
Still another object of the present invention is to make the thermal expansion coefficient close to that of alumina ceramic and use the same ceramic package as before, so that it is inexpensive and easy to manufacture. Is to provide glass.

【0012】[0012]

【課題を解決するための手段】本発明者は、上記の目的
を達成すべく鋭意研究の結果、ホウケイ酸ガラスや無ア
ルカリバリウムケイ酸ガラスといった多成分ケイ酸塩ガ
ラスからなるカバーガラスから出る放射線の一種である
α線の発生の主因は、ガラスに不純物として含まれる
U、Thによるものであり、またガラスに混入するU、
Thの主因は、ジルコニア原料とバリウム原料にあるこ
とを見いだした。
Means for Solving the Problems The inventors of the present invention have conducted intensive studies to achieve the above object, and as a result, the radiation emitted from a cover glass made of a multi-component silicate glass such as borosilicate glass or alkali-free barium silicate glass. The main cause of the generation of α-rays, which is a kind of, is due to U and Th contained in glass as impurities,
It has been found that the main cause of Th lies in the zirconia raw material and the barium raw material.

【0013】ガラス原料の詳細な調査により、従来から
ジルコニア系原料が、α線の発生源であることは良く知
られているが、ジルコニア系原料以外にも、バリウム原
料が高いα線量を有することが判明した。例えば一般に
バリウム原料として用いられる炭酸バリウムについて、
その通常品位の製品および高純度品のα線測定値は次の
ようであった。
It has been well known that a zirconia-based material is a source of alpha rays from a detailed investigation of glass materials. However, in addition to the zirconia-based material, a barium material has a high α-dose. There was found. For example, for barium carbonate generally used as a barium raw material,
The α-ray measurement values of the normal-grade product and the high-purity product were as follows.

【0014】 通常品炭酸バリウム 0.5〜15 C/cm2・hr. 高純度品炭酸バリウム 0.1 C/cm2・hr.Conventional barium carbonate 0.5 to 15 C / cm 2 · hr. High purity barium carbonate 0.1 C / cm 2 · hr.

【0015】また本発明者は、カバーガラスから出る放
射線の一種であるβ線発生の主因がガラスに含まれるK
の放射性同位元素である40Kによるものであり、ガラス
中のK2 Oの含有量を一定値以下に抑えることによっ
て、β線放射量を低くすることができることも見いだし
た。
The present inventor has also reported that the main cause of β-ray generation, which is a kind of radiation emitted from a cover glass, is that K included in the glass.
Is of by 40 K is a radioactive isotope, by suppressing the content of K 2 O in the glass below a predetermined value, and also found that it is possible to lower the β-ray radiation amount.

【0016】すなわち本発明の低放射線ガラスは、重量
百分率で、SiO2 62.0〜75.0%、Al2
3 4.0〜10.0%、B23 8.0〜15.0
%、Na 2 O 10.5〜12.5%、Li2 O+Na
210.5〜20.0%、K2 O 0〜2.0%、
MgO+CaO+SrO+ZnO 0.3〜21.0
%、BaO 0〜1.0%、ZrO2 0〜1.0%の組
成を有することを特徴とする。
That is, the low-radiation glass of the present invention is composed of 62.0 to 75.0% of SiO 2 and Al 2 O by weight percentage.
3 4.0~10.0%, B 2 O 3 8.0~15.0
%, Na 2 O 10.5~12.5%, Li 2 O + Na
2 O 10.5 ~20.0%, K 2 O 0~2.0%,
MgO + CaO + SrO + ZnO 0.3-21.0
%, BaO 0~ 1.0%, and having a composition of ZrO 2 0 to 1.0%.

【0017】また本発明の低放射線ガラスは、好ましく
は、重量百分率で、SiO2 62.0〜75.0%、
Al23 4.0〜10.0%、B23 8.0〜
15.0%、Li2 O 0〜3.0%、Na2
0.5〜12.5%、K2 O0〜0.5%、MgO 0
〜10.0%、CaO 0〜10.0%、SrO 0〜
5.0%、ZnO 0.3〜5.0%、BaO 0〜
0.4%、ZrO2 0〜0.5%の組成を有すること
を特徴とする。
The low-radiation glass of the present invention preferably has a SiO 2 content of 62.0 to 75.0% by weight,
Al 2 O 3 4.0 to 10.0%, B 2 O 3 8.0 to
15.0%, Li 2 O 0~3.0% , Na 2 O 1
0.5-12.5% , K 2 O 0-0.5%, MgO 0
110.0%, CaO 0 to 10.0%, SrO 0
5.0%, ZnO 0.3-5.0%, BaO 0
0.4%, and having a composition of ZrO 2 0 to 0.5%.

【0018】さらに本発明の低放射線ガラスは、固体撮
像素子用セラミックパッケージのカバーガラスとして用
いられることを特徴とし、またその場合、30〜380
℃の温度範囲における熱膨張係数を、アルミナのそれ
(70×10-7/℃)に近い50〜75×10-7/℃に
すると、アルミナセラミックパッケージと容易に封着可
能となるため好ましい。
Further, the low-radiation glass of the present invention is used as a cover glass of a ceramic package for a solid-state imaging device.
It is preferable that the thermal expansion coefficient in the temperature range of 50 ° C. be 50 to 75 × 10 −7 / ° C., which is close to that of alumina (70 × 10 −7 / ° C.), because it can be easily sealed with the alumina ceramic package.

【0019】[0019]

【作用】次に本発明における低放射線ガラスの好ましい
組成を上記のように限定した理由を説明する。
Next, the reason why the preferred composition of the low radiation glass in the present invention is limited as described above will be described.

【0020】まずSiO2 は、ガラスの耐候性を向上さ
せる作用を有する成分であるが、その含有量が62.0
%未満では、その効果が小さく、一方、75.0%を超
えるとガラスの溶融が困難になる。
First, SiO 2 is a component having an effect of improving the weather resistance of glass, and its content is 62.0%.
%, The effect is small. On the other hand, if it exceeds 75.0%, melting of the glass becomes difficult.

【0021】Al23 も、ガラスの耐候性を向上させ
る作用を有するが、その含有量が4.0%未満ではその
効果が小さく、一方10.0%を超えるとガラスの溶融
が困難になる。
Al 2 O 3 also has an effect of improving the weather resistance of the glass. However, if its content is less than 4.0%, the effect is small, while if it exceeds 10.0%, melting of the glass becomes difficult. Become.

【0022】B23 は、ガラスの粘性を下げて均質性
を高くし、しかもガラスの耐失透性を向上させる作用を
有するが、その含有量が8.0%未満ではその効果が小
さく、一方15.0%を超えるとガラスの耐候性が悪く
なり、また溶融時の揮発量が増えて均質なガラスが得ら
れ難くなる。
B 2 O 3 has the effect of lowering the viscosity of the glass to increase the homogeneity and improving the devitrification resistance of the glass. However, if the content is less than 8.0%, the effect is small. On the other hand, if it exceeds 15.0%, the weather resistance of the glass deteriorates, and the amount of volatilization during melting increases, making it difficult to obtain a homogeneous glass.

【0023】Li23 及びNa2 Oは、ガラスの粘性
を下げて均質性を高くすると共に、ガラスの熱膨張係数
を調整する作用を有するが、Na 2 Oが10.5%以下
になると、ガラスの粘性が高くなり、均質性が低下する
と共に、アルミナセラミックパッケージを用いた固体撮
像装置のカバーガラスとしては、熱膨張係数が低くなり
すぎる。またNa 2 Oが12.5%以上、あるいはLi
2 OとNa 2 Oの合量が、20.0%以上になると、
ラスの耐候性が悪化すると共に、熱膨張係数が高くなり
すぎる。
[0023] Li 2 O 3 and Na 2 O, as well as to increase the homogeneity decreasing the viscosity of the glass and has an effect of adjusting the thermal expansion coefficient of the glass, Na 2 O is less 10.5%
, The viscosity of the glass increases and the homogeneity decreases
And solid-state imaging using an alumina ceramic package.
As a cover glass for imaging devices, the thermal expansion coefficient is low.
Too much. Na 2 O is 12.5% or more, or Li
When the total amount of 2 O and Na 2 O is 20.0% or more, the weather resistance of the glass deteriorates and the coefficient of thermal expansion becomes too high.

【0024】K2 Oも、Li2 OやNa2 Oと同様の作
用を有するが、β線の発生を少なくするためには、その
含有量を2.0%以下に抑える必要がある。
K 2 O has the same action as Li 2 O and Na 2 O, but its content must be suppressed to 2.0% or less in order to reduce the generation of β-rays.

【0025】MgO、CaO、SrO及びZnOは、ガ
ラスの耐候性を向上させると共に、ガラスの粘性を下
げ、しかも溶融時の揮発を抑えて均質性を高くする作用
を有するが、その含有量が0.3%未満ではその効果が
十分得られず、一方21.0%を超えると、ガラスが失
透しやすくなる。
MgO, CaO, SrO and ZnO have the effect of improving the weather resistance of the glass, lowering the viscosity of the glass, and suppressing volatilization during melting to increase the homogeneity. If it is less than 0.3%, the effect cannot be sufficiently obtained, while if it exceeds 21.0%, the glass tends to be devitrified.

【0026】BaOも、MgO、CaO、SrO、Zn
Oと同様の作用を有するが、その原料中にα線を放出す
るU、Thを多く含むため、その含有量を1.0%以下
に抑える必要がある。
BaO is also MgO, CaO, SrO, Zn
O has the same effect as O, but since the raw material contains a large amount of U and Th that emit α rays, its content needs to be suppressed to 1.0% or less.

【0027】また先記したようにZrO2 も、その原料
中にα線を放出するU、Thを多く含むため、その含有
量を1.0%未満に抑える必要がある。
Further, as described above, ZrO 2 also contains a large amount of U and Th that emit α rays in its raw material, so that its content must be suppressed to less than 1.0%.

【0028】尚、本発明においては、先記したような成
分以外にも、ガラスの特性を劣化させない範囲で、清澄
剤としてAs23 、Sb23 、塩化物、弗化物を含
有させることも可能である。
In the present invention, As 2 O 3 , Sb 2 O 3 , chloride and fluoride are contained as fining agents in addition to the above-mentioned components as long as the properties of the glass are not deteriorated. It is also possible.

【0029】[0029]

【実施例】以下、本発明の低放射線ガラスを実施例に基
いて詳細に説明する。
EXAMPLES Hereinafter, the low radiation glass of the present invention will be described in detail based on examples.

【0030】表1、2は、実施例(試料No.1〜
と、比較例(試料No.5〜8)のガラスを示すもので
ある。
Tables 1 and 2 show Examples (Sample Nos. 1 to 4 ).
And Comparative Examples (Sample Nos. 5 to 8 ).

【0031】
[0031]

【表1】 [Table 1]

【0032】[0032]

【表2】 [Table 2]

【0033】表のNo.1〜の各試料は、次のように
して調製した。
No. in the table. Each of the samples 1 to 8 was prepared as follows.

【0034】まず表に示す組成のガラスとなるように調
合したガラス原料を白金ルツボに入れ、電気炉中で15
00℃、5時間の条件で溶融した後、この溶融ガラスを
グラファイト上に流し出し、次いで徐冷炉で除歪した。
First, a glass raw material prepared so as to obtain a glass having the composition shown in the table is placed in a platinum crucible and placed in an electric furnace.
After melting at 00 ° C. for 5 hours, the molten glass was poured out on graphite, and then strained in a slow cooling furnace.

【0035】こうして作製した各試料を用いてα線放射
量と、30〜380℃の温度範囲における熱膨張係数を
測定した。
Using the samples thus prepared, the amount of α-ray radiation and the coefficient of thermal expansion in the temperature range of 30 to 380 ° C. were measured.

【0036】表から明らかなように、実施例であるN
o.1〜の各試料は、α線放射量が0.007C/c
2 ・hr.以下と少なく、しかも熱膨張係数が66
74×10-7/℃であり、アルミナセラミックのそれに
近似していた。
As is apparent from the table, the N
o. Each sample of Nos. 1 to 4 has an α-ray emission of 0.007 C / c.
m 2 · hr. And the coefficient of thermal expansion is 66 to
It was 74 × 10 −7 / ° C., which was similar to that of alumina ceramic.

【0037】それに対し、比較例であるNo.5、6
各試料は、各々の熱膨張係数が60×10-7/℃、52
×10-7/℃であったが、α線放射量が、0.6C/c
2・hr.、0.7C/cm2 ・hr.と何れも高か
った。
On the other hand, in Comparative Example No. Each of the samples 5 and 6 has a coefficient of thermal expansion of 60 × 10 −7 / ° C., 52
× 10 −7 / ° C., but the α-ray emission was 0.6 C / c
m 2 · hr. , 0.7 C / cm 2 · hr. And both were high.

【0038】またNo.の試料は、α線放射量が0.
1C/cm2 ・hr.と比較的高かく、しかも熱膨張係
数が47×10-7/℃と低いため、実施例の各試料に比
べてアルミナセラミックパッケージに封着し難いものと
思われる。
No. The sample of No. 7 had an α-ray emission of 0.
1 C / cm 2 · hr. Therefore, since the thermal expansion coefficient is as low as 47 × 10 −7 / ° C., it is considered that it is difficult to seal the alumina ceramic package as compared with the samples of the examples.

【0039】ただしNo.の試料は、α線放射量が
0.008C/cm2 ・hr.と低く、熱膨張係数も6
5×10-7/℃であり、何れの特性も良好であった。
However, no. 8 has an α-ray emission of 0.008 C / cm 2 · hr. Low and the coefficient of thermal expansion is 6
It was 5 × 10 −7 / ° C., and all the characteristics were good.

【0040】次に実施例の各試料の組成からなるカバ−
ガラスを作製し、これを固体撮像素子を取り付けたアル
ミナセラミックパッケージに封着し、この固体撮像装置
を長時間使用したが、固体撮像素子のソフトエラーや永
久損傷が発生することはなかった。
Next, a cover made of the composition of each sample of the example was used.
Glass was produced and sealed in an alumina ceramic package to which a solid-state imaging device was attached, and this solid-state imaging device was used for a long time. However, no soft error or permanent damage of the solid-state imaging device occurred.

【0041】また比較のため、No.の試料の組成か
らなるカバーガラスを作製し、上記と同様に固体撮像装
置を作製して長時間使用したところ、固体撮像素子のソ
フトエラーが発生した。この理由は、No.の試料
は、K2 Oを3.0%含有しており、そのためガラスに
含まれる40Kが多く、カバーガラスから多量のβ線が発
生するからであると考えられる。
For comparison, no. When a cover glass having the composition of Sample No. 8 was prepared, and a solid-state imaging device was prepared and used for a long time in the same manner as described above, a soft error of the solid-state imaging device occurred. The reason is as follows. It is considered that Sample No. 8 contained 3.0% of K 2 O, so that the glass contained a large amount of 40 K, and a large amount of β rays were generated from the cover glass.

【0042】尚、表中のα線放射量は、ガスフロー比例
計数管測定装置を用いて測定し、また熱膨張係数は、石
英管式膨張計を用いて測定したものである。
In the table, the amount of α-ray radiation is measured by using a gas flow proportional counter measuring device, and the coefficient of thermal expansion is measured by using a quartz tube dilatometer.

【0043】[0043]

【発明の効果】以上のように、本発明の低放射線ガラス
は、固体撮像素子のカバーガラスとして使用しても、放
射線量が少ないため、素子にソフトエラーを発生させた
り、永久損傷を発生させることがなく、しかも熱膨張係
数をアルミナセラミックのそれに近似させることによっ
て、従来と同じセラミックパッケージを用いることがで
きるため、安価で、製造が容易である。
As described above, the low-radiation glass of the present invention, even when used as a cover glass for a solid-state imaging device, generates a soft error or permanent damage to the device because of a small radiation dose. By making the thermal expansion coefficient close to that of alumina ceramic, the same ceramic package as that of the related art can be used, so that it is inexpensive and easy to manufacture.

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) C03C 1/00 - 14/00 H01L 27/14 H01L 21/339 H01L 29/762 H01L 23/02,23/04,23/10 H01L 33/10 ──────────────────────────────────────────────────続 き Continuation of front page (58) Field surveyed (Int.Cl. 7 , DB name) C03C 1/00-14/00 H01L 27/14 H01L 21/339 H01L 29/762 H01L 23 / 02,23 / 04,23 / 10 H01L 33/10

Claims (4)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 重量百分率で、SiO2 62.0〜7
5.0%、Al234.0〜10.0%、B23
8.0〜15.0%、Na 2 O 10.5〜12.5
、Li2 O+Na210.5〜20.0%、K2
O 0〜2.0%、MgO+CaO+SrO+ZnO
0.3〜21.0%、BaO 0〜1.0%、ZrO2
0〜1.0%の組成を有することを特徴とする低放射
線ガラス。
1. The composition according to claim 1, wherein the weight percentage of SiO 2 is 62.0-7.
5.0%, Al 2 O 3 4.0~10.0 %, B 2 O 3
8.0~15.0%, Na 2 O 10.5~12.5
%, Li 2 O + Na 2 O 10.5 ~20.0%, K 2
O 0-2.0%, MgO + CaO + SrO + ZnO
0.3-21.0%, BaO 0-1.0%, ZrO 2
A low radiation glass having a composition of 0 to 1.0%.
【請求項2】 重量百分率で、SiO2 62.0〜7
5.0%、Al234.0〜10.0%、B23
8.0〜15.0%、Li2 O 0〜3.0%、Na2
10.5〜12.5%、K2 O 0〜0.5%、M
gO 0〜10.0%、CaO 0〜10.0%、Sr
O 0〜5.0%、ZnO 0.3〜5.0%、BaO
0〜0.4%、ZrO2 0〜0.5%の組成を有す
ることを特徴とする請求項1の低放射線ガラス。
2. The composition according to claim 1, wherein the SiO 2 content is 62.0-7% by weight.
5.0%, Al 2 O 3 4.0~10.0 %, B 2 O 3
8.0~15.0%, Li 2 O 0~3.0% , Na 2
O 10.5-12.5% , K 2 O 0-0.5% , M
gO 0-10.0%, CaO 0-10.0%, Sr
O 0-5.0%, ZnO 0.3-5.0%, BaO
0 to 0.4%, low radiation glass according to claim 1, characterized in that it has a composition of ZrO 2 0 to 0.5%.
【請求項3】 固体撮像素子用セラミックパッケージの
カバーガラスとして用いられることを特徴とする請求項
1の低放射線ガラス。
3. The low radiation glass according to claim 1, which is used as a cover glass of a ceramic package for a solid-state imaging device.
【請求項4】 30〜380℃の温度範囲における熱膨
張係数が、50〜75×10-7/℃であることを特徴と
する請求項3の低放射線ガラス。
4. The low radiation glass according to claim 3, wherein a coefficient of thermal expansion in a temperature range of 30 to 380 ° C. is 50 to 75 × 10 −7 / ° C.
JP04361428A 1992-12-29 1992-12-29 Low radiation glass Expired - Fee Related JP3090174B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP04361428A JP3090174B2 (en) 1992-12-29 1992-12-29 Low radiation glass

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04361428A JP3090174B2 (en) 1992-12-29 1992-12-29 Low radiation glass

Publications (2)

Publication Number Publication Date
JPH06211539A JPH06211539A (en) 1994-08-02
JP3090174B2 true JP3090174B2 (en) 2000-09-18

Family

ID=18473539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP04361428A Expired - Fee Related JP3090174B2 (en) 1992-12-29 1992-12-29 Low radiation glass

Country Status (1)

Country Link
JP (1) JP3090174B2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5378158B2 (en) * 2003-02-19 2013-12-25 日本電気硝子株式会社 Cover glass for semiconductor packages
JP2005008509A (en) * 2003-05-29 2005-01-13 Nippon Electric Glass Co Ltd Cover glass for optical semiconductor package, and its production method
JP2005162600A (en) * 2003-11-11 2005-06-23 Nippon Electric Glass Co Ltd Cover glass plate for semiconductor package
JP4493417B2 (en) * 2004-06-09 2010-06-30 Hoya株式会社 Glass for semiconductor package window, glass window for semiconductor package and semiconductor package
JP6056186B2 (en) * 2012-05-08 2017-01-11 株式会社ニコン Image sensor
JP5964219B2 (en) * 2012-11-30 2016-08-03 日本板硝子株式会社 Glass filler

Also Published As

Publication number Publication date
JPH06211539A (en) 1994-08-02

Similar Documents

Publication Publication Date Title
US4277286A (en) Lead-free glasses of high x-ray absorption for cathode ray tubes
JP2005162600A (en) Cover glass plate for semiconductor package
JPH0210099B2 (en)
JP3090174B2 (en) Low radiation glass
JP5348598B2 (en) Glass substrate for semiconductor device and chip scale package using the same
JP3112053B2 (en) Cover glass for solid-state imaging device
JP3283722B2 (en) Window glass for semiconductor package and method of manufacturing the same
JP2004238283A (en) Window material glass for semiconductor package
JP3206804B2 (en) Window glass for solid-state imaging device package
JP2634063B2 (en) Cover glass for solid-state imaging device
JP2001185710A (en) Cover glass for solid-state image pickup element
JPH07215734A (en) Cover glass for solid-state image pickup element
US6956000B2 (en) Panel glass for cathode ray tube
JP2000233939A (en) Window glass for solid-state image pickup element package
JP2660891B2 (en) Window glass for solid-state image sensor package
JP3123009B2 (en) Window glass for solid-state imaging device package
JPH07237933A (en) Glass for packaging and production thereof
JP3589421B2 (en) Window material glass for semiconductor package and method of manufacturing the same
JP3206787B2 (en) Window glass for solid-state imaging device package
JP3090173B2 (en) Cover glass for solid-state imaging device
JP2747871B2 (en) Low level α-ray glass and method for producing the same
US20050209086A1 (en) Panel glass for cathode ray tube
JPH0822760B2 (en) Fe-Ni-Co alloy sealing glass
JPH1036134A (en) Ultraviolet light-transmitting glass for sealing aulimina
JP2731422B2 (en) Glass for near infrared absorption filter

Legal Events

Date Code Title Description
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080721

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080721

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090721

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090721

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100721

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110721

Year of fee payment: 11

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110721

Year of fee payment: 11

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120721

Year of fee payment: 12

LAPS Cancellation because of no payment of annual fees