WO2006041074A1 - 固体撮像素子用カバーガラス及びその製造方法 - Google Patents
固体撮像素子用カバーガラス及びその製造方法 Download PDFInfo
- Publication number
- WO2006041074A1 WO2006041074A1 PCT/JP2005/018758 JP2005018758W WO2006041074A1 WO 2006041074 A1 WO2006041074 A1 WO 2006041074A1 JP 2005018758 W JP2005018758 W JP 2005018758W WO 2006041074 A1 WO2006041074 A1 WO 2006041074A1
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- WIPO (PCT)
- Prior art keywords
- glass
- solid
- light
- cover glass
- thin film
- Prior art date
Links
- 239000006059 cover glass Substances 0.000 title claims abstract description 117
- 238000000034 method Methods 0.000 title claims abstract description 60
- 230000008569 process Effects 0.000 title abstract description 18
- 239000007787 solid Substances 0.000 title abstract description 5
- 239000005357 flat glass Substances 0.000 claims abstract description 132
- 239000011521 glass Substances 0.000 claims abstract description 132
- 239000010409 thin film Substances 0.000 claims abstract description 78
- 239000006060 molten glass Substances 0.000 claims abstract description 23
- 238000002844 melting Methods 0.000 claims abstract description 22
- 230000008018 melting Effects 0.000 claims abstract description 22
- 239000000203 mixture Substances 0.000 claims abstract description 21
- 229910052809 inorganic oxide Inorganic materials 0.000 claims abstract description 12
- 239000000075 oxide glass Substances 0.000 claims abstract description 12
- 239000002994 raw material Substances 0.000 claims abstract description 9
- 238000003384 imaging method Methods 0.000 claims description 71
- 238000004519 manufacturing process Methods 0.000 claims description 24
- 230000003746 surface roughness Effects 0.000 claims description 16
- 230000003287 optical effect Effects 0.000 claims description 15
- 239000003513 alkali Substances 0.000 claims description 13
- 230000005540 biological transmission Effects 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 238000000465 moulding Methods 0.000 abstract description 19
- 239000010408 film Substances 0.000 description 49
- 239000000126 substance Substances 0.000 description 24
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 22
- 238000012545 processing Methods 0.000 description 21
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 18
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- 238000005498 polishing Methods 0.000 description 13
- 239000000395 magnesium oxide Substances 0.000 description 12
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 11
- 239000011787 zinc oxide Substances 0.000 description 11
- 238000003825 pressing Methods 0.000 description 10
- 238000005259 measurement Methods 0.000 description 9
- 238000012546 transfer Methods 0.000 description 9
- 239000002253 acid Substances 0.000 description 8
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 8
- 239000000292 calcium oxide Substances 0.000 description 8
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 8
- 230000035882 stress Effects 0.000 description 8
- 230000003749 cleanliness Effects 0.000 description 7
- 238000003698 laser cutting Methods 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 7
- 239000002585 base Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 229910052783 alkali metal Inorganic materials 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 239000000428 dust Substances 0.000 description 5
- 239000011734 sodium Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000006121 base glass Substances 0.000 description 3
- 229910000420 cerium oxide Inorganic materials 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910052700 potassium Inorganic materials 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- 229910052770 Uranium Inorganic materials 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 2
- 229910001632 barium fluoride Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 2
- 229910001634 calcium fluoride Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010828 elution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920001690 polydopamine Polymers 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 229910052705 radium Inorganic materials 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- BYMUNNMMXKDFEZ-UHFFFAOYSA-K trifluorolanthanum Chemical compound F[La](F)F BYMUNNMMXKDFEZ-UHFFFAOYSA-K 0.000 description 2
- 229940105963 yttrium fluoride Drugs 0.000 description 2
- RBORBHYCVONNJH-UHFFFAOYSA-K yttrium(iii) fluoride Chemical compound F[Y](F)F RBORBHYCVONNJH-UHFFFAOYSA-K 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- 238000007088 Archimedes method Methods 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- 241001424413 Lucia Species 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 206010040925 Skin striae Diseases 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 229910003087 TiOx Inorganic materials 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000005260 alpha ray Effects 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 229910001610 cryolite Inorganic materials 0.000 description 1
- 239000006063 cullet Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004031 devitrification Methods 0.000 description 1
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 1
- QXYJCZRRLLQGCR-UHFFFAOYSA-N dioxomolybdenum Chemical compound O=[Mo]=O QXYJCZRRLLQGCR-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- CUPFNGOKRMWUOO-UHFFFAOYSA-N hydron;difluoride Chemical compound F.F CUPFNGOKRMWUOO-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000001182 laser chemical vapour deposition Methods 0.000 description 1
- YAFKGUAJYKXPDI-UHFFFAOYSA-J lead tetrafluoride Chemical compound F[Pb](F)(F)F YAFKGUAJYKXPDI-UHFFFAOYSA-J 0.000 description 1
- 239000002649 leather substitute Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 238000007500 overflow downdraw method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- ZARVOZCHNMQIBL-UHFFFAOYSA-N oxygen(2-) titanium(4+) zirconium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4] ZARVOZCHNMQIBL-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- PXXKQOPKNFECSZ-UHFFFAOYSA-N platinum rhodium Chemical compound [Rh].[Pt] PXXKQOPKNFECSZ-UHFFFAOYSA-N 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920006289 polycarbonate film Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- -1 silver halide Chemical class 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 description 1
- 229910001637 strontium fluoride Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- DNYWZCXLKNTFFI-UHFFFAOYSA-N uranium Chemical compound [U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U] DNYWZCXLKNTFFI-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- IBYSTTGVDIFUAY-UHFFFAOYSA-N vanadium monoxide Chemical compound [V]=O IBYSTTGVDIFUAY-UHFFFAOYSA-N 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
- 239000010938 white gold Substances 0.000 description 1
- 229910000832 white gold Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/001—General methods for coating; Devices therefor
Definitions
- the present invention relates to a cover glass that is disposed as a window material that transmits light in a receptacle housing a solid-state image sensor and protects the solid-state image sensor, and a method for manufacturing the same.
- CCD Charge Coupled Device
- vidicons a representative element of solid-state imaging devices
- sachicons or vacuum tubes.
- this CCD overcomes the inferior points such as low sensitivity compared with the image pickup tube, and displays various images such as electronic shutter, camera shake correction, and zoom functions to display images on the silver halide film.
- digital cameras are installed in information terminal devices such as mobile phones and PHS, more diverse and advanced performance is being demanded.
- CMOS Complementary Metal Oxide Semiconductor, also referred to as complementary MOS
- complementary MOS Complementary Metal Oxide Semiconductor
- MOS-CCD Complementary Metal Oxide Semiconductor
- BBD Bracket Brigade device
- a cover glass which is an essential component for constructing an element package and allowing light to enter the element, is higher than before. It has become.
- a solid-state image sensor is housed inside a package having an airtight structure, and a flat glass cover glass having translucency is arranged on the front surface thereof. It is.
- This cover glass can be used in various package cases such as ceramic materials such as alumina, metal materials such as Kovar (Fe-Ni-Co alloy), composite materials such as glass epoxy base materials, and plastic materials such as epoxy resin. It is sealed using various adhesives and used as a translucent window.
- Patent Document 1 discloses an invention relating to a processing method for preventing edge portion chipping.
- Patent Documents 3 and 4 disclose measures for improving the problem of a trace amount of radioactive elements that may impair the performance of a CCD or CMOS into glass.
- Patent Document 1 Japanese Patent Application Laid-Open No. 2004-221541
- Patent Document 2 JP-A-6-106469
- Patent Document 3 Japanese Patent Laid-Open No. 7-206467
- Patent Document 4 Japanese Patent Laid-Open No. 6-211539
- solid-state imaging devices are used in electronic information terminals such as digital cameras, mobile phones, and PDAs, and the functions of such electronic devices are remarkably expanding and their functions are greatly improved. It has been.
- the remarkable progress of functions related to solid-state image sensors such as CCD and CMOS has brought about constant technological innovation in various electronic devices, and various information devices such as mobile phones and PDAs have been announced to the world. And these electronic devices are expected to be further developed with various functions in the future.
- each electronic component to be installed in an electronic device will be required to be lighter, thinner, and smaller than before.
- a cover glass for a solid-state imaging device is required to have a high cleanliness to achieve a desired transmittance on the surface of a plate glass that transmits light of various wavelengths in addition to a requirement for lightness and shortness. It has a high chemical durability, and realizes a strength that does not hinder practical use even with a cover glass having a small thickness and area.
- the cleanliness of the cover glass for a solid-state imaging device in which a thin film is formed on the glass surface is such that the film periphery is peeled off by the history after the film formation, and the fine peeled material is peeled off to float the glass.
- the fine peeled material is peeled off to float the glass.
- the present inventors have achieved high performance as a cover glass used for a window material of a solid-state imaging device, and in order to realize performance, the thin film applied to the cover glass surface is difficult to peel off. It is an object of the present invention to provide a cover glass for a solid-state imaging device having high mechanical strength, stable chemical performance, and high cleanliness, and a manufacturing method thereof.
- the cover glass for a solid-state imaging device of the present invention has a first light-transmitting surface and a second light-transmitting surface on the front and back in the thickness direction of the flat glass made of inorganic oxide glass.
- a cover glass for a solid-state imaging device in which a thin film is formed on one light-transmitting surface, wherein unevenness is formed on an edge of the thin film located at an outer edge portion on the first light-transmitting surface in the flat glass,
- the projections and depressions are characterized in that the maximum recess position force on the plane parallel to the first light-transmitting surface has a projection dimension up to the maximum projection position within a range of 0.5 ⁇ m force 50 ⁇ m.
- the unevenness is formed on the edge of the thin film located at the outer edge portion on the first light-transmitting surface of the flat glass, for the solid-state imaging device made of the inorganic oxide glass of the present invention.
- the cover glass has a thin film having a composition different from that of the glass on the first light-transmitting surface that transmits light, and the edge (outer peripheral edge) of the thin film located at the outer edge on the first light-transmitting surface of the flat glass. It means that the unevenness along the surface parallel to the first light transmitting surface is formed on the edge). Further, the unevenness is a maximum projecting position from a maximum depression position on a plane parallel to the first light transmitting surface.
- the protrusion dimension until reaching the position is within the range of 0.5 m to 50 m.
- the maximum recess position of the unevenness that is, the concave end position of the maximum recess (the most recessed position), and the maximum protrusion position of the unevenness.
- the dimension where the convex end position of the largest convex part (the most projecting position) is separated in the projecting direction (the direction perpendicular to the corresponding outer edge (side) of the first translucent surface) is 0.5 ⁇ m. It means that it is in the range of m to 50 m.
- the protrusion dimension of the unevenness formed on the edge of the thin film is 0.5 m or more, mechanical stress applied to the thin film applied to the surface of the cover glass for a solid-state image sensor, It is possible to disperse the force acting in the direction of peeling off the thin film adhering portion at the outer peripheral edge caused by heat history, etc. without concentrating it in one direction. This is preferable because the state applied to the light surface can be easily maintained over time.
- the unevenness of the unevenness formed on the edge of the thin film exceeds 50 m, it becomes easy to generate a portion where the thin film is easily peeled off locally, and if the local peeling occurs, a part of the thin film peeled off As a cause of dust generation, it may adhere to the light-transmitting surface of the force bar glass during the assembly process of the solid-state imaging device and cause trouble. For this reason, it is preferable that the unevenness of the edge in contact with the surface of the thin-film flat glass (the above projecting dimension) is 50 ⁇ m or less.
- the above-described protruding dimension of the unevenness formed on the edge of the thin film is 0.7 ⁇ m. If it is desired that a more stable state is preferred to be not less than m and not more than 45 ⁇ m, more preferably not less than 0.9 m and not more than 40 ⁇ m.
- polishing for example, polishing, polishing, laser cutting, masking acid, alkali chemical treatment, chemical treatment, sandblasting, etc. It can be realized by using physical impact machining, cutting with loose abrasive grains or fixed abrasive grains.
- the second light-transmitting surface corresponding to the back surface of the first light-transmitting surface to which the thin film is applied faces upward, and the second light-transmitting surface has an output condition in which the beam intensity distribution is within 5%, and the beam Spot shape is oval, approximately rectangular, linear, triangular
- a slit is formed on the glass surface of the plate glass corresponding to the beam driving position by linear driving at a constant speed while irradiating a carbon dioxide laser having a shape.
- a notch of a predetermined depth is formed in the glass thickness direction, and the inner surface of the newly generated notch is formed as the first processed surface.
- the carbon dioxide laser irradiation on the outer surface side portion (first translucent surface side portion) as a fulcrum so that bending stress is applied directly below both sides of the fulcrum.
- it is broken by pushing and splitting so that the second surface is formed by the crack surface.
- the range of application rates of the press 0.
- a ridge line having suitable irregularities and an edge of a thin film having suitable irregularities are formed.
- the shape of the periphery of the small rectangular plate glass is in a state where a predetermined performance can be guaranteed.
- a rectangular plastic, rubber, metal or the like is suitable as a jig for pressing.
- the part of the jig that comes into contact with the glass plate surface is preferably a smooth surface, not an uneven surface, and this pressing process must be performed in a state where there are no foreign substances adhering to the surface.
- the thin film may be an optically functional thin film, a thin film that protects the glass surface chemically, a thin film that protects the glass surface such as mechanical stress applied to the glass surface, etc. It is possible to realize such functions.
- an infrared reflective film (or infrared cut filter), an antireflective film, a conductive film, an antistatic film, a low-pass filter, a high-pass filter, a band-pass filter, a shielding film, a protective film, etc.
- the infrared reflecting film is preferable because the sensitivity of the infrared region of the CCD is high, so that the image of the solid-state imaging device can be brought close to the image by the naked eye by suppressing the incidence of infrared rays on the infrared device.
- Examples of the material of the thin film include silica (SiO 2), alumina (Al 2 O 3), zircoyu (SiO 2), alumina (Al 2 O 3), zircoyu (SiO 2), alumina (Al 2 O 3), zircoyu (SiO 2), alumina (Al 2 O 3), zircoyu (SiO 2), alumina (Al 2 O 3), zircoyu (SiO 2), alumina (Al 2 O 3), zircoyu (SiO 2), alumina (Al 2 O 3), zircoyu (SiO 2), alumina (Al 2 O 3), zircoyu (SiO 2), alumina (Al 2 O 3), zircoyu (SiO 2), alumina (Al 2 O 3), zircoyu (SiO 2), alumina (Al 2 O 3), zircoyu (SiO 2), alumina (A
- La O yttrium oxide
- MgO magnesium oxide
- HfO hafnium oxide
- Chromium oxide Cr 2 O 3
- magnesium fluoride MgF 2
- MoO 2 molybdenum oxide
- BaF Barium fluoride
- LiF Lithium fluoride
- LaF Lanthanum fluoride
- SiO and Al O multilayer film SiOx-TiOx multilayer film, SiO-TaO multilayer film, SiOx
- a film having a composition such as a thin film, a colloidal particle dispersion film, a polymethylmetatalylate film (PMMA film), a polycarbonate film (PC film), a polystyrene film, a methylmethacrylate styrene copolymer film, or a polyacrylate film can be used.
- the method for forming the thin film is not particularly limited as long as it can achieve a desired thickness, surface accuracy, and a desired optical function. Instead, various methods can be employed. Examples of methods that can be employed include physical vapor deposition methods such as vacuum deposition, sputtering, ion plating, molecular beam epitaxy (MBE), laser ablation, and spraying. (Or PVD method). Or chemical vapor deposition (or CVD) such as thermal CVD, laser CVD, plasma CVD, metal organic chemical vapor deposition (MOCVD), and liquid phase such as sol-gel, spin coating, and plating The growth method can also be employed as a method for forming the above thin film.
- physical vapor deposition methods such as vacuum deposition, sputtering, ion plating, molecular beam epitaxy (MBE), laser ablation, and spraying. (Or PVD method).
- chemical vapor deposition or CVD
- thermal CVD thermal CVD
- laser CVD plasma CVD
- MOCVD metal organic chemical
- the PVD method is particularly preferable because it has good adhesion at low temperatures, can form a film, can be applied to various coatings, and is suitable for forming a coating of a compound. is there.
- the cover glass for a solid-state imaging device of the present invention has a surface roughness Ra value of 3 nm or less on the side surface constituting the outer peripheral portion of the flat glass, and the side surface and the first light-transmitting surface.
- One of the irregularities of the ridgeline where the and the ridgeline contact or the ridgeline irregularity where the side surface and the second translucent surface contact each other is the corresponding one of the first translucent surface and the second translucent surface
- the maximum dent position force on the parallel plane is within the range of 0.5 ⁇ m / zm force to 40 ⁇ m until the maximum protrusion position is reached, since the transportability is improved.
- the Ra value of the surface roughness on the side surface of the flat glass is 3 nm or less.
- the Ra value specified in JIS B0601 as a measure for the surface roughness is 3 nm or less.
- the ridge line where the side surface and the first light-transmitting surface contact each other means the ridge line that intersects the side surface and the first light-transmitting surface, and the ridge line where the side surface and the second light-transmitting surface contact each other means the side surface. This means a ridge line that intersects the second translucent surface.
- the first light-transmitting surface corresponds to either the first light-transmitting surface or the second light-transmitting surface
- the first light-transmitting surface corresponds to the unevenness of the ridgeline where the side surface and the first light-transmitting surface contact each other.
- Y It corresponds to one translucent surface
- the ridge line irregularities where the side surface and the second translucent surface contact each other means that the second translucent surface corresponds to the corresponding one translucent surface.
- the projection size up to the maximum projection position is the same as that already described for the irregularities on the edge of the thin film.
- the cover glass Hold the side of the glass plate to store and remove it in the storage container for transporting the plate glass to be used, or to perform the operation of placing it at a specified location in the cage that houses the solid-state image sensor.
- the ridge line irregularities (above-mentioned protrusion dimensions) where the side surface of the flat glass and the translucent surface intersect (the above-mentioned protruding dimensions) should be within the range of 0.8 m force and 35 ⁇ m. More preferably, it is in the range of 1.0 to 30 m, and more preferably in the range of 1.5 m force to 25 ⁇ m.
- polishing may be performed in the same manner as described above. Polishing, laser cutting, chemical treatment by etching with chemicals such as acid or alkaline chemicals by masking, physical treatment such as sandblasting, etc. This can be realized by using a general impact machining and a cutting process using a loose abrasive or a fixed abrasive.
- the flat glass when using laser cutting, the flat glass is broken by applying a pressing force to the second light-transmitting surface under a predetermined condition, not the surface on which the thin film is formed as described above. If it does, it will become a thing suitable for adjusting the unevenness
- the cover glass for a solid-state imaging device of the present invention has a first side surface portion adjacent to the first light transmitting surface, a first side surface portion, and a second light transmitting surface.
- a ridge line formed by the first light-transmitting surface and the first side surface portion has a maximum depression position force on a surface parallel to the first light-transmitting surface at a maximum protruding position. It is preferable that the projecting dimension to be in the range of 1.5 m to 20 m is easy to handle flat glass.
- the first side surface portion and the second side surface portion of the side surface of the flat glass are divided by a boundary line formed due to a difference in surface properties, mainly surface roughness, and this boundary line is For example, it can be clearly recognized by observing under a microscope at a magnification of about 50 times, and the first side surface is adjacent to the first translucent surface over the entire circumference of the flat glass, and the second side surface is flat. It adjoins the 1st side part and the 2nd translucent surface over the perimeter of plate glass. Note that the projection size until the maximum depression position force reaches the maximum projection position is the same as the above-mentioned matter, which already means the unevenness of the edge of the thin film.
- the flat glass is moved.
- the uneven part of the ridgeline acts as a slipper, making it difficult to cause problems such as slipping. Therefore, it is possible to realize a stable operation, and a state having an appropriate static friction coefficient with respect to the jig contact surface can be obtained.
- the above protrusion dimension in the unevenness of the ridge line that is the boundary between the first light-transmitting surface and the first side surface portion By setting the method to 20 m or less, it is possible to suppress the occurrence of surface defects such as cracks, cracks, and scratches of fine dimensions that cause changes over time in the strength of the side surface of the plate glass, which is preferable. .
- the unevenness of the ridge line (the above-mentioned boundary between the first translucent surface and the first side surface portion on which the thin film of flat glass is formed (above-mentioned) (Projection dimension) is preferably in the range of 1.7 / zm to 18 / zm, more preferably the boundary between the first light-transmitting surface and the first side surface on which a thin film of flat glass is formed.
- Ridge irregularities (projection dimensions above) should be in the range of 1.8 m to 15 m.
- the cover glass for a solid-state imaging device of the present invention has an optical path force that enters from the first side surface portion and Z or the second side surface portion of the flat glass and exits from the second light transmitting surface. If UV rays with a wavelength of 300nm are to be transmitted by 10% or more, it is preferable because higher intensity light can be incident on the device.
- an optical path that enters from the first side surface portion and the Z or second side surface portion of the flat glass and exits from the second light transmitting surface transmits 10% or more of ultraviolet rays having a wavelength of 300 nm. Is incident on the side of the cover glass for solid-state image sensor, when UV rays with a wavelength of 300 ⁇ m corresponding to the wavelength in the ultraviolet region are incident and emitted from the second translucent surface. This means that the rate is over 10%.
- the cover glass for a solid-state imaging device of the present invention can easily achieve various performances if the thin film is an optical thin film and the film thickness is in the range of 0.01 to 100 m. Fruit It is preferable because it can be expressed.
- the thin film is an optical thin film and the film thickness is in the range of 0.01 ⁇ m force to 100 ⁇ m
- the thin film applied to the surface of the cover glass for the solid-state imaging device is It is a thin film with optical functions such as control of the incidence of light of various wavelengths, and its thickness dimension is in the range of lOnm to 1 X 10 5 nm.
- the thickness dimension of the thin film is less than 0.01 ⁇ m because the optical function of the thin film may not be sufficiently exhibited.
- the thickness of the thin film is greater than 100 m, stress due to the expansion coefficient of the film material, such as excessive sealing stress and thermal stress, is likely to occur on the thin film, and it is difficult to maintain long-term adhesion on the surface of the plate glass. It may cause deterioration over time such as peeling or cracking.
- the thin film preferably has a thickness dimension of 0.01 ⁇ m force and 100 ⁇ m.
- the cover glass for a solid-state image pickup device of the present invention is preferably used if the solid-state image pickup device is CCD or CMOS because the device performance can be sufficiently exhibited.
- a CCD is an element that consists of a light-receiving unit that stores a charge proportional to the amount of light depending on the brightness of an image and a transfer unit that transfers the stored charge to collect it in one place.
- This element has the function of receiving light with a diode and taking it out with a transistor switch.
- the cover glass for a solid-state imaging device of the present invention is a cover glass capable of hermetically sealing to transmit light for a solid-state imaging device such as a CCD or CMOS and further protect the elements in the package from external air force. When used as, it can exert its performance greatly.
- the solid-state imaging device cover glasses of the present invention in addition to the above, inorganic oxide glass flat glass, the mass 0/0, SiO 55 ⁇ 70%, Al O 0. 5 ⁇ 20% , BO 5 ⁇
- silica is 55 to 70 mass 0/0
- aluminum oxide also referred to as alumina
- alumina is 0.5 to 2 0 mass 0/0
- magnesium oxide magnesium both also referred
- the acid of calcium force Lucia and, U
- zinc oxide or zinc!, U
- oxide strontium beam and the total amount of barium oxide 0.1 to 30 weight 0/0, zinc oxide 9 mass 0/0 or less
- the total amount of oxide lithium (also referred to as Rishia) and Sani ⁇ sodium and Sani ⁇ potassium indicates that from 1 to 20 weight 0/0.
- SiO is a major component constituting the skeleton of the network structure on the atomic scale of glass
- Al 2 O is a component necessary for stabilizing the glass network structure and at the same time
- B 2 O decreases the melting temperature of the glass and melts the glass during melting.
- MgO manganesium oxide
- CaO calcium oxide
- ZnO zinc oxide
- SrO oxidation
- the total amount of strontium) and BaO (barium oxide) is V and the deviation is necessary to achieve the desired performance such as the weather resistance and meltability of the glass, as well as the refractive index and transmittance. Force If the total amount is less than 0.1% by mass, it is often insufficient to achieve the desired function. On the other hand, if the total amount exceeds 30% by mass, the weather resistance of the glass and the meltability at the time of melting often increase, which is not preferable. Also, regarding the strength of the glass, if it exceeds 30% by mass, problems may occur, which is not preferable.
- ZnO is added to the glass to improve the chemical durability over a long period of time on the glass surface after molding, and to improve the scratch resistance of the glass surface. Although it is a component that can be improved, it is not preferable to add more than 9% by mass because the chemical durability may deteriorate.
- the cover glass for a solid-state image sensor of the present invention achieves high weather resistance after the solid-state image sensor package is formed if the inorganic oxide glass is non-alkali glass. Is preferred.
- the inorganic oxide glass is a non-alkali glass means a glass that essentially does not contain Li, Na, and K, which are alkali metal element components. Essentially not contained here means that elements such as Na (sodium), ⁇ (potassium), and Li (lithium), which are alkali metal elements in the glass composition, are 0.1% by mass or less in terms of oxides. It will be. That is, for the cover glass for a solid-state imaging device of the present invention, it is possible to adopt a glass composition that also requires its application power, and the alkali component contained in the glass article is glass.
- cover glass composition a composition not containing an alkali metal element or a so-called non-alkali glass composition can be used, and the desired function can be realized by applying the present invention to the non-alkali glass. Is possible.
- composition of the alkali-free glass that can be employed in such a case is as follows.
- the components contained in the glass are expressed in terms of oxide, mass%, SiO 53 to 61%, AlO 0.
- SrO is preferably 0.1 to 15%, and the OH group content in the glass is preferably in the range of 50 ppm to 700 ppm.
- SiO for the composition of the alkali-free glass, the mass 0/0 less than 53%
- the chemical durability tends to be low. On the other hand, it exceeds 61% and does not contain alkali metal elements. Therefore, the viscosity of the molten glass is high, resulting in an inhomogeneous molten state. Since it may be difficult to form a homogeneous thin glass at a manufacturing cost, it is not preferable.
- Al 2 O is in the range of 0.5 to 20% by mass with respect to the composition of the alkali-free glass.
- the inside of the glass is harmonized with respect to the electrical performance and electrical performance of the glass such as electric resistance.
- the total amount of MgO and BaO should be in the range of 2 to 28% by mass.
- the total amount of CaO and SrO should be within the range of 0.1 to 15% by mass%. Optimum state of properties such as chemical resistance, thermal expansion coefficient, and low-temperature viscosity after molding Therefore, it is preferable.
- B 2 O is a component that improves the meltability of the glass.
- the OH group content in the glass can be within the range of 50 ppm to 700 ppm.
- the viscosity of molten glass at a temperature higher than 10 4 dPa 'sec of glass can be adjusted to an appropriate viscosity value.
- the glass surface molded by this molding method is preferable because a glass molded body having a uniform and smooth surface state can be obtained.
- the composition of the cover glass for a solid-state image sensor of the present invention has the above-mentioned characteristics, and adopts a high-purity raw material and its prepared melting environment, so that u (uranium) and TM trough are used. ), Ra (Radium), Fe O, PbO, TiO, MnO, ZrO, etc.
- the ⁇ -ray emission amount of the cover glass for a solid-state image sensor must be 0.5 cZcm 2 'hr or less.
- an interline transfer type (IT-CCD) that is classified according to the difference in light receiving method and transfer method with respect to the function of the element.
- FIT-CCD Frame interline transfer type
- FF-CCD full frame transfer type
- F-CCD frame transfer type
- PSD photoconductive film stack type
- the cover glass for a solid-state image sensor of the present invention can be used for the element storage package of the element used in the field classified as the above-mentioned CMOS or other solid-state image sensor.
- the cover glass for a solid-state imaging device is an element storage package used in a digital camera, a mobile phone, or the like, such as an interline transfer type (IT-CCD) or a progressive scan type CCD included therein. It is also suitable as a cover glass.
- IT-CCD interline transfer type
- CCD progressive scan type
- the cover glass for a solid-state image sensor of the present invention has a coefficient of thermal expansion that is relatively close to the coefficient of thermal expansion of the solid-state image sensor. It is preferable if the thermal expansion coefficient is smaller than that of the body material. For example, if alumina with an expansion coefficient of force S70 X 10 _7 Z ° C is used as the knock , the cover glass will be smaller than 70 X 10 _7 Z ° C. Any glass having an expansion coefficient value up to 30 X 10 _7 Z ° C may be used. Further, it is more preferable that the cover glass has a smaller mass. From such a viewpoint, the density of the glass is preferably 2.8 gZcm 3 or less. Further, it is preferable that there is substantially no hindrance to the homogeneity of the glass article such as striae knots in the plate glass, and high homogeneity is realized.
- the method for producing a cover glass for a solid-state imaging device of the present invention includes a step of melting a glass raw material mixture in a heat-resistant container, a step of forming the obtained molten glass into a plate glass, and a surface of the plate glass. It has the process of forming a thin film in the 1st translucent surface which is one side of a back surface, and the process of dividing
- having the above four steps means that the inorganic raw material or glass cullet is heated in a container or tank that can withstand high temperatures of 1500 ° C or higher, such as platinum or ceramics. Heating and melting by the method to homogenize, forming the homogenized molten glass into plate glass by adopting various forming methods, and thin film by various methods on the first light-transmitting surface of the formed plate glass. This means that the method further includes the step of forming a thin plate glass piece by using a processing device or the like for the thin glass plate glass.
- the step of forming the thin film on the first light-transmitting surface of the plate glass may be a step that is continuous with the step of forming the plate glass described above, or may be a separate step. In any case, since the film is formed on the surface of the plate glass, it is difficult to apply a desired film in an environment that impairs cleanliness such as adhesion of dust to the glass surface.
- the division is performed so that the end surface state having the desired properties as described above is obtained. If it can be done, any other processing method such as cleaving Even if it exists, it can be employed without any problem.
- the method for producing a cover glass for a solid-state imaging device includes the step of forming a molten glass into a plate glass by drawing the molten glass downward to obtain a plate glass.
- a plate glass can be obtained with high thickness dimensional accuracy.
- the step of forming the molten glass into the plate glass is to obtain the plate glass by drawing the molten glass downward, using an apparatus that employs a forming means for drawing downward.
- a sheet glass is formed, and when a molten glass in a high temperature state is formed by a desired forming method, it is stretched while applying a stretching force to the molten glass through an apparatus having a heat-resistant structure such as a roll. It means that it is formed by a method that realizes a predetermined surface accuracy, plate thickness, and plate area.
- the stretch molding method specifically, a method of molding by a molding means such as a slot down draw molding method, an overflow down draw molding method (or a fusion method), a roll-out molding method, a lead draw molding method or the like is shown.
- a molding means such as a slot down draw molding method, an overflow down draw molding method (or a fusion method), a roll-out molding method, a lead draw molding method or the like is shown.
- the method for producing a cover glass for a solid-state image pickup device of the present invention includes a small piece of plate glass on the second light-transmitting surface where the thin film is not formed on the front and back surfaces of the plate glass. It is preferable to cut a spare spare line to be divided into pieces because the dividing operation can be performed efficiently.
- V means that energy related to processing is applied from the side of the second light-transmitting surface, and that energy starts cracking, cutting, breaking or cleaving for fragmentation of the sheet glass.
- the method for producing the cover glass for a solid-state imaging device of the present invention includes 81% to 99% of both the first light-transmitting surface and the second light-transmitting surface in the small plate glass piece. It is preferable to divide it so that it becomes an effective surface for light because sufficient image information can be incident on the solid-state imaging device.
- 81% of both the first light-transmitting surface and the second light-transmitting surface in the small glass sheet piece Splitting so that ⁇ 99% is the effective surface for image transmissivity means that, of the two translucent surfaces of the plate glass, the area of each translucent surface is normal for the solid-state image sensor after packaging.
- the effective area that can transmit the light rays forming the gap is divided so that it is in the range of 81% to 99%.
- the area of one translucent surface is the rectangular area formed inside by connecting the intersecting vertices of the four sides (or four ridge lines) surrounding the single translucent surface of a small piece of plate glass piece. That is.
- transmitting a light beam that forms a normal image to a solid-state imaging device means that a light beam that does not cause irregular reflection light that causes flare, ghost, or the like is transmitted.
- both of the first light-transmitting surface and the second light-transmitting surface of the small plate glass piece are effective surfaces, it is sufficient to form an image on the solid-state imaging device. It is preferable because an optical beam can be incident on the element.
- both the first light-transmitting surface and the second light-transmitting surface of the small plate glass piece have more effective surfaces than 99% of the area, an adhesive or the like is used to seal the plate glass piece to the package housing.
- the area force of the second light-transmitting surface of the glass piece that is necessary to apply the coating is too small, so the package after sealing undergoes various heat history and loads such as chemical attack from the usage environment This is not preferable because there is a risk that reliability that can cope with the environment may be lowered. Therefore, from this point of view, it is more preferable to divide the range of 83% to 98% of the area of both light-transmitting surfaces in the small plate glass piece into a size that is an effective area for image light transmission. It is preferable to divide the range of 85% to 97% of the area of both translucent surfaces into a size that is an effective area for image translucent, and preferably from 86% of the area of both translucent surfaces. The 95% range should be the effective area for image transmission.
- the dimensional accuracy of the end surface processing of the plate glass piece and the end surface The processing state is important.
- securing the effective surface for image transmissivity so as to be within a predetermined ratio range means that a part of the ineffective surface of the plate glass is sealed in a package containing the solid-state image sensor with the above-described adhesive or the like. Since it is a part that plays a role, it is important to keep the area of the ineffective surface within the specified range.
- the sealing area using the ineffective surface will vary, and as a result, the environmental performance of the solid-state image sensor package will be reduced. This is because it may be lowered.
- the dimensional accuracy of the end face processing and the end face processing state of this glass sheet piece are not the prescribed ones, it adheres to the glass fragments and end face caused by the end face that is partially damaged or chipped on the effective surface for image transmission. This is because it is not preferable because the foreign matter is likely to be scattered and adhered, and the effective surface for image transmission may become ineffective. For this reason, as described above, it is possible to avoid such a problem by setting the unevenness of the ridge line formed by the light transmitting surface and the end surface within a predetermined range.
- the cover glass for a solid-state imaging device of the present invention has a thin film formed on the first light-transmitting surface of a flat glass made of an inorganic oxide glass, and the second glass of the flat glass.
- the edge of the thin film located on the outer edge of the light-transmitting surface is formed with irregularities within the range of 0.5 ⁇ m force and 50 ⁇ m in the protruding dimension until reaching the maximum protruding position force. Therefore, it is a cover glass that can withstand various environmental tests such as a thermal shock test and thermal cycle test, and the thin film on the cover glass surface is difficult to peel off due to thermal and mechanical stress. It has high reliability and stability.
- the cover glass for a solid-state imaging device of the present invention has a surface roughness of the side surface of the flat glass.
- Ra value is 3 nm or less, and either the ridge line where the side surface and the first light-transmitting surface contact or the ridge line where the side surface and the second light-transmitting surface contact each other from the maximum depression position to the maximum protrusion position.
- the cover glass for a solid-state imaging device of the present invention is adjacent to a first light-transmitting surface on which a thin film of flat glass is formed and a second light-transmitting surface facing the first light-transmitting surface.
- the side surface is provided with a first side surface portion adjacent to the first light transmitting surface and a second side surface portion adjacent to the first side surface portion and the second light transmitting surface, the first light transmitting surface and the first side surface portion.
- the cover glass for a solid-state imaging device of the present invention has an optical path that enters from the first side surface portion and Z or the second side surface portion of the flat glass and exits from the second translucent surface force. If the cover glass can be sealed in a solid-state image sensor package by using UV-curing resin, it can be used even if UV rays with a wavelength of 3 OOnm are transmitted 10% or more. Since bonding having bonding strength can be performed, the efficiency of package manufacturing can be maintained at a sufficiently high level.
- the cover glass for a solid-state imaging device of the present invention is requested by the customer if the thin film is an optical thin film and the film thickness is within the range of 0.01 m force and 100 m.
- a cover glass having a high optical performance can be supplied in a state having an excellent quality with a margin according to dimensions and the like.
- the cover glass for a solid-state image pickup device of the present invention if the solid-state image pickup device is a CCD or a CMOS, is mounted on various highly versatile devices, thereby improving the performance of the CCD or CMOS. It has a quality that can be fully exerted.
- the cover glass for a solid-state imaging device of the present invention is made of a flat glass made of an inorganic oxide glass in terms of mass%, SiO 55 to 70%, Al 2 O 5 to 20%, BO 5 ⁇ 20%, RO
- the cover glass for a solid-state imaging device of the present invention is a solid mounted on an electronic device used outdoors as long as the inorganic oxide glass is a non-alkali glass cover.
- the quality related to weather resistance, which is important for protecting the image sensor, can always be kept high, and is suitable as a cover glass for a solid-state image sensor mounted on a portable information terminal, a mobile phone or the like.
- a method for producing a cover glass for a solid-state imaging device of the present invention includes a step of melting a glass raw material mixture in a heat-resistant container, a step of forming the obtained molten glass into a plate glass, Since it includes a step of forming a thin film on the first light-transmitting surface, which is one of the front and back surfaces, and a step of dividing the plate glass on which the thin film is formed into small pieces of plate glass pieces, a number of plate glass pieces are subjected to the same conditions. It is possible to form a film underneath, reduce the variation in optical performance of the manufactured cover glass for solid-state imaging element, and increase the chemical durability of the film. Reduces the occurrence.
- the step of forming the molten glass into the plate glass is such that the molten glass is stretched downward to obtain the plate glass.
- the surface quality such as the undulation of the glass plate, which is the base material
- high-precision molding of molten glass that fully meets the requirements for dimensional accuracy can be performed at high speed, high production efficiency This makes it possible to achieve reasonable manufacturing costs that meet market demands.
- the plate glass is formed on the second light-transmitting surface where the thin film is not formed on the front and back surfaces of the plate glass. If the spare line to be divided is engraved, the processing to make the glass sheet as a base material into small pieces can be performed without applying a large force to the film surface or the film adhesion surface. The occurrence of defects due to the end face of each subsequent plate glass piece can be suppressed to a low level.
- FIG. 1 (A) is an overall perspective view of a cover glass for a solid-state image sensor according to an embodiment of the present invention
- FIG. 1 (B) is indicated by reference numeral B in FIG. 1 (A).
- FIG. 1C is an enlarged plan view of the portion indicated by the symbol B.
- FIG. 2 (A) is a longitudinal side view for explaining a solid-state image sensor using the cover glass for a solid-state image sensor
- FIG. 2 (B) is a plane for explaining the solid-state image sensor.
- FIG. 3 is a schematic perspective view for explaining a process for producing a thin glass sheet such as a thick glass cover in the method for producing a cover glass for a solid-state imaging device according to an embodiment of the present invention.
- FIG. 4 is a schematic perspective view for explaining a step of performing a second process on the thin glass sheet after the first process in the method for manufacturing a cover glass for a solid-state imaging device according to the embodiment of the present invention.
- FIG. 1 (A) is a perspective view of a cover glass for a solid-state image sensor according to an embodiment of the present invention.
- FIG. 1 (B) is an enlarged perspective view of a portion indicated by reference numeral B in FIG. 1 (A), and FIG. 1 (C) is an enlarged plan view of the portion.
- FIG. 2 (A) longitudinal sectional front view showing a state in which the solid-state imaging device cover glasses were mounted on a package for a solid-state imaging device
- FIG. 2 (B) is a plan view showing the same state.
- This cover glass 10 for a solid-state imaging device is expressed by mass%, SiO 60%, Al 2 O 14.7
- the flat glass (small piece of glass plate) made of non-alkali borosilicate glass with a composition of H base of 565 ppm, and is used for the package of interline transfer type CCD elements mounted on portable electronic devices. It is used for cover glass as a window material.
- the flat glass has a length of 3 mm, a width of 3 mm, and a thickness of 0.5 mm.
- the infrared reflecting film 20 is formed only on one side of the light transmitting surface, that is, the first light transmitting surface 11a.
- This infrared shielding film 20 is made of SiO and TaO from 75 nm by CVD method. 40 or more layers are alternately laminated so as to have a thickness of 160 nm, and have a performance of blocking 96% or more of infrared rays having a wavelength of 750 nm or more.
- the side surface 12 of the cover glass 10 is composed of two side surfaces having different properties as shown in FIGS. 1 (A) and 1 (B), and one is a first side surface portion 12a in contact with the first light transmitting surface 11a. And the other is the second side surface portion 12b adjacent to the first side surface portion 12a and the second light transmitting surface l ib.
- the cover glass 10 has a maximum value T of the unevenness of the ridge line 21 where the first light-transmitting surface 11a and the first side surface 12a are in contact, that is, the first light-transmitting surface 11a.
- the projection dimension T from the maximum depression position to the maximum projection position of the ridge line 21 on the plane parallel to the ridge line 21 is within the range of 1.5 to 20 / ⁇ ⁇ at 3.5 111, and from the side surface 12
- the surface roughness is 0.5 nm.
- the force bar glass 10 is formed on the first light-transmitting surface 11a, the maximum value L of the unevenness of the edge 22 in contact with the surface of the flat glass of the thin film 20, that is, on the surface parallel to the first light-transmitting surface 11a.
- the protrusion dimension L until the maximum depression position of the unevenness on the edge 22 of the thin film 20 at the maximum protrusion position is 2.1 to 111 in the range of 0.5 to 50 ⁇ .
- the effective transmission area P of the solid-state image pickup device cover glass 10 indicated by the hatched portion in FIG. 2B is investigated when the solid-state image pickup device 50 is driven. It is found to be 87% with respect to the area of each of the first translucent surface 11a and the second translucent surface 1 lb.
- the measurement of the surface roughness of the cover glass 10 for a solid-state imaging device according to the present invention is performed using a stylus type surface roughness measuring instrument Talistep (Tayler-Mobson), with a thickness of 0.25 mm.
- the measurement length was measured under the conditions of a measurement speed of 0.0025 mmZsec, a filter of 0.33 Hz, and a magnification of 200,000 times.
- Concavity and convexity measurements are based on measurements using a microscope, SEM, etc. It is.
- This process is a process for producing a large plate-shaped base glass having a size of about 300 mm in a thin plate, but there are two types of this process, one is a stretch molding method and the other is precision grinding. This is a method using only polishing.
- stretch molding it is a sheet glass that has been formed after melting in a melting furnace composed of a refractory metal or a refractory metal such as white gold, for example, a base glass sheet having a width of 850 mm, a thickness of 5 mm and a length of 3 m prepare.
- the base plate glass is subjected to polishing while automatically supplying a slurry in which free barrels such as cerium oxide are dispersed in water or the like by a rotary polishing machine (not shown) equipped with artificial leather.
- the polishing force is applied to a mirror surface with a surface roughness of Ra value of 1. lnm, washed and dried to obtain, for example, a thick glass 60 having a thickness of 4.5 ⁇ 0.5 mm.
- this thick glass 60 is set in the stretch molding apparatus 70 shown in FIG. 3, heated by a heating furnace 80a maintained at a temperature at which the glass viscosity becomes 10 5 dPa's, and taken out and attached to the lower part.
- the sheet glass 90 is formed into a thin glass sheet 90 by carrying it out at a speed 10 times as high as the loading speed by the roller 80b, and a slab-shaped large glass sheet with a side of 300 mm is formed by scribing both sides of the thin glass sheet 90.
- glass that has been melted and homogenized in a melting furnace, for example, into an ingot (block) with dimensions of 800 x 300 x 300 mm is subjected to molding. Cut by using a wire saw or the like that uses free barrels to obtain a sheet glass with a thickness of 1.5 mm.
- a thin plate-like large plate glass is obtained by subjecting this thin glass to polishing using the rotary polishing machine as described above.
- the size of the large glass that can be manufactured by the above two methods can be molded in the range of vertical: 50 to 600 mm, horizontal: 50 to 60 Omm, plate thickness: 0.1 to 50 mm. It can be changed accordingly.
- SiO and TaO are alternately laminated by CVD (Chemical Vapor Deposition) on one translucent surface of this large glass plate, that is, the first translucent surface side.
- the formed thin glass can be obtained.
- laser scribing is employed using a laser cutting device.
- the laser beam moving speed 180 ⁇ 5mmZsec as a split spare line on one non-deposited second transparent surface of thin glass up to 20% thickness in the thickness direction
- the grid-like first processing is performed under the conditions of 220 ⁇ 5mmZsec and laser output of 120 ⁇ 5W or 160 ⁇ 5W.
- the metallic line head 93 is moved in the operation direction M from the surface on which the film is formed on the opposite side of the first processing surface 92 of the thin glass 91, At the same time, by pressing the second translucent surface on the first processed surface 92 side of the thin glass 91 with a jig (not shown), stress is applied to the first processed surface 92 of the thin glass 91, and the pressing speed 1 X 10 _3 Press and split at m / sec .
- a strip-shaped plate glass divided along the planned line that is the origin of the fracture formed by the first processing is obtained.
- the strip-shaped plate glass that has been cut and split in this way is transported to the next process using vacuum tweezers (not shown).
- the final glass sheet for a solid-state image sensor can be obtained by again splitting the strip-shaped plate glass.
- the first processed surface 912 of the thin glass 91 corresponds to the second side surface portion 12b of the cover glass 10 shown in FIG. 1, and the fractured surface obtained by the second processing (split split) of the thin glass 91 is It corresponds to the first side surface portion 12a of the cover glass 10.
- a glass raw material prepared and mixed in advance so as to have the composition shown in Table 1 is held in an electric melting furnace having a stirring function using a platinum rhodium crucible having a volume of lOOOcc at 1550 ° C. After melting for 20 hours, the molten glass was poured into a carbon mold and slowly cooled to form an appropriate shape so that various characteristics could be measured. And the characteristic of each obtained glass sample was measured with the following method. That is, the alkali elution amount was measured according to JIS R3502. Those indicated as ND in the table indicate that it is difficult to detect. The density was measured by a well-known Archimedes method. Furthermore, as for the linear expansion coefficient, the linear expansion coefficient when heated from 30 ° C to 380 ° C was measured according to JIS R3102. [0098] [Table 1]
- the alkali elution amount, density, and linear expansion coefficient satisfy the requirements for the cover glass for a solid-state imaging device according to the present invention. It has been found. However, the performance of the cover glass for a solid-state imaging device of the present invention can be realized by satisfying these compositions and various characteristics and having the surface quality as described above.
- Samples A to E which are examples, are made of a base glass plate that satisfies the above-mentioned characteristics, further processed into a thin glass plate, and the first side portion of the side surface is formed by laser scribing (first processing).
- the second side surface portion is formed by cleaving (second processing), that is, by pressing and splitting under the condition of a pressing speed of 2 ⁇ 10_3 m / sec .
- Sample E which is a comparative example, has a first side surface portion formed by mechanical force scribing and a second side surface portion formed by pressing. Then, the surface roughness of each of the first and second side surfaces of each sample is measured (by Digital Instruments), an atomic force microscope (NanoScopelll Tapping M). ode AFM). In the measurement using an atomic force microscope, the measurement length 40 / zm was measured 10 times and the average value was obtained. The unevenness of the ridge line and the unevenness of the outer edge (edge) of the film were measured with an electron microscope and a stereomicroscope. The results are shown in Table 2.
- sample A to sample D which are examples of the cover glass for a solid-state imaging device of the present invention, all have a surface roughness Ra on the side surface of the cover glass of 0.7 nm force and 1.3 nm.
- the unevenness of the ridgeline formed by the first translucent surface and the first side surface portion is in the range of 5 ⁇ m to 18 ⁇ m and is sufficiently small, and the outer peripheral edge of the film ( It was found that the roughness of the edge) was within the range of 27 ⁇ m and the range of 0.5 ⁇ m force to 50 ⁇ m.
- sample E which is a comparative example, sometimes has a surface roughness Ra of 72.4 nm, ridge irregularities are 122 / zm, and the outer peripheral edge (edge) of the film is also irregular. 1 It turned out to be as high as 78 ⁇ m.
Abstract
Description
Claims
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JPWO2021070442A1 (ja) * | 2019-10-11 | 2021-04-15 | ||
WO2023157574A1 (ja) * | 2022-02-18 | 2023-08-24 | デンカ株式会社 | 粉末及び粉末の製造方法 |
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CN110272205A (zh) * | 2019-06-26 | 2019-09-24 | 醴陵旗滨电子玻璃有限公司 | 一种硼硅酸盐玻璃及其制备方法和应用 |
CN114423718A (zh) * | 2019-10-07 | 2022-04-29 | 日本电气硝子株式会社 | 紫外线透射玻璃 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH05175472A (ja) * | 1991-12-20 | 1993-07-13 | Toshiba Corp | 固体撮像装置 |
JPH09283731A (ja) * | 1996-04-08 | 1997-10-31 | Nippon Electric Glass Co Ltd | 固体撮像素子用カバーガラス |
JP2001102470A (ja) * | 1999-09-30 | 2001-04-13 | Sony Corp | 半導体装置 |
JP2004221541A (ja) * | 2002-11-15 | 2004-08-05 | Nippon Electric Glass Co Ltd | 固体撮像素子用カバーガラス |
-
2005
- 2005-10-12 CN CNB2005800267026A patent/CN100470814C/zh active Active
- 2005-10-12 KR KR1020067027675A patent/KR101201384B1/ko active IP Right Grant
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05175472A (ja) * | 1991-12-20 | 1993-07-13 | Toshiba Corp | 固体撮像装置 |
JPH09283731A (ja) * | 1996-04-08 | 1997-10-31 | Nippon Electric Glass Co Ltd | 固体撮像素子用カバーガラス |
JP2001102470A (ja) * | 1999-09-30 | 2001-04-13 | Sony Corp | 半導体装置 |
JP2004221541A (ja) * | 2002-11-15 | 2004-08-05 | Nippon Electric Glass Co Ltd | 固体撮像素子用カバーガラス |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPWO2021070442A1 (ja) * | 2019-10-11 | 2021-04-15 | ||
WO2021070442A1 (ja) * | 2019-10-11 | 2021-04-15 | 日本電気硝子株式会社 | パッケージとその製造方法、及びカバーガラスとその製造方法 |
WO2023157574A1 (ja) * | 2022-02-18 | 2023-08-24 | デンカ株式会社 | 粉末及び粉末の製造方法 |
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TW200621666A (en) | 2006-07-01 |
TWI372741B (en) | 2012-09-21 |
CN100470814C (zh) | 2009-03-18 |
CN1993830A (zh) | 2007-07-04 |
KR20070083394A (ko) | 2007-08-24 |
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