TW200621666A - Cover glass for solid-state imaging device and manufacturing method thereof - Google Patents
Cover glass for solid-state imaging device and manufacturing method thereofInfo
- Publication number
- TW200621666A TW200621666A TW094135488A TW94135488A TW200621666A TW 200621666 A TW200621666 A TW 200621666A TW 094135488 A TW094135488 A TW 094135488A TW 94135488 A TW94135488 A TW 94135488A TW 200621666 A TW200621666 A TW 200621666A
- Authority
- TW
- Taiwan
- Prior art keywords
- glass plate
- glass
- thin film
- light
- imaging device
- Prior art date
Links
- 239000006059 cover glass Substances 0.000 title abstract 3
- 238000003384 imaging method Methods 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000011521 glass Substances 0.000 abstract 9
- 238000000034 method Methods 0.000 abstract 5
- 239000010409 thin film Substances 0.000 abstract 5
- 229910052809 inorganic oxide Inorganic materials 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000000075 oxide glass Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/001—General methods for coating; Devices therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Ceramic Engineering (AREA)
- Dispersion Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
A cover glass 10 for solid-state imaging device is provided. The glass plate is made of inorganic oxide glass. A first light-transmitting face 11a and a second light-transmitting face 11b are provided on the outer and the inner surface in the direction of thickness of the glass plate, respectively. And a thin film 20 is formed on the first light-transmitting face 11a for constituting the cover glass for solid-state imaging device. And, an unevenness is formed on the edges 22 of the thin film 20, where the thin film 20 is disposed on the outer edges of the first light-transmitting face 11a of the glass plate. The unevenness, which is the protruding size L from the most sunken place to the most protruding place on the parallel face to the first light-transmitting face 11a, is between 0.5μm to 50μm. And, the manufacturing method thereof contains processes as follows: the process of melting glass material mixture in the heat-resistant container; the process of forming a glass plate with the obtained melted glass; the process of forming a thin film on the glass plate; and the process of cutting the glass plate having the thin film to several pieces of little glass plate.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004297829 | 2004-10-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200621666A true TW200621666A (en) | 2006-07-01 |
| TWI372741B TWI372741B (en) | 2012-09-21 |
Family
ID=36148362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094135488A TWI372741B (en) | 2004-10-12 | 2005-10-12 | Cover glass for solid-state imaging device and manufacturing method thereof |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR101201384B1 (en) |
| CN (1) | CN100470814C (en) |
| TW (1) | TWI372741B (en) |
| WO (1) | WO2006041074A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110272205A (en) * | 2019-06-26 | 2019-09-24 | 醴陵旗滨电子玻璃有限公司 | A kind of borosilicate glass and its preparation method and application |
| CN114423718A (en) * | 2019-10-07 | 2022-04-29 | 日本电气硝子株式会社 | Ultraviolet ray transmitting glass |
| JPWO2021070442A1 (en) * | 2019-10-11 | 2021-04-15 | ||
| JP2023120508A (en) * | 2022-02-18 | 2023-08-30 | デンカ株式会社 | Powder and powder manufacturing method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3099914B2 (en) * | 1991-12-20 | 2000-10-16 | 株式会社東芝 | Solid-state imaging device |
| JPH09283731A (en) * | 1996-04-08 | 1997-10-31 | Nippon Electric Glass Co Ltd | Cover glass for solid-stage image sensing element |
| JP2001102470A (en) * | 1999-09-30 | 2001-04-13 | Sony Corp | Semiconductor device |
| JP4628667B2 (en) * | 2002-11-15 | 2011-02-09 | 日本電気硝子株式会社 | Cover glass for solid-state image sensor |
-
2005
- 2005-10-12 WO PCT/JP2005/018758 patent/WO2006041074A1/en active Application Filing
- 2005-10-12 TW TW094135488A patent/TWI372741B/en active
- 2005-10-12 CN CNB2005800267026A patent/CN100470814C/en active Active
- 2005-10-12 KR KR1020067027675A patent/KR101201384B1/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| TWI372741B (en) | 2012-09-21 |
| CN1993830A (en) | 2007-07-04 |
| KR101201384B1 (en) | 2012-11-14 |
| WO2006041074A1 (en) | 2006-04-20 |
| CN100470814C (en) | 2009-03-18 |
| KR20070083394A (en) | 2007-08-24 |
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