TWI397531B - 有效於作為銅薄膜沉積前驅體之銅（ｉ）化合物 - Google Patents
有效於作為銅薄膜沉積前驅體之銅（ｉ）化合物 Download PDFInfo
- Publication number
- TWI397531B TWI397531B TW094111308A TW94111308A TWI397531B TW I397531 B TWI397531 B TW I397531B TW 094111308 A TW094111308 A TW 094111308A TW 94111308 A TW94111308 A TW 94111308A TW I397531 B TWI397531 B TW I397531B
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- Taiwan
- Prior art keywords
- copper
- group
- precursor
- solvent
- copper precursor
- Prior art date
Links
- 239000010949 copper Substances 0.000 title claims description 43
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 38
- 229910052802 copper Inorganic materials 0.000 title claims description 38
- 239000002243 precursor Substances 0.000 title claims description 27
- VMQMZMRVKUZKQL-UHFFFAOYSA-N Cu+ Chemical class [Cu+] VMQMZMRVKUZKQL-UHFFFAOYSA-N 0.000 title claims description 21
- 230000008021 deposition Effects 0.000 title description 7
- 239000010409 thin film Substances 0.000 title description 7
- 239000012691 Cu precursor Substances 0.000 claims description 45
- 239000000203 mixture Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 29
- 239000002904 solvent Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 27
- 150000001875 compounds Chemical class 0.000 claims description 26
- 229910052739 hydrogen Inorganic materials 0.000 claims description 23
- 238000005229 chemical vapour deposition Methods 0.000 claims description 22
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 22
- 238000000231 atomic layer deposition Methods 0.000 claims description 18
- 238000009472 formulation Methods 0.000 claims description 15
- 239000007788 liquid Substances 0.000 claims description 15
- 125000003118 aryl group Chemical group 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 11
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 239000007787 solid Substances 0.000 claims description 9
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 8
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 6
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 claims description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 6
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- -1 tungsten nitride Chemical class 0.000 claims description 6
- 150000001412 amines Chemical class 0.000 claims description 4
- 238000000354 decomposition reaction Methods 0.000 claims description 4
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 claims description 3
- MHZGKXUYDGKKIU-UHFFFAOYSA-N Decylamine Chemical compound CCCCCCCCCCN MHZGKXUYDGKKIU-UHFFFAOYSA-N 0.000 claims description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- 239000002671 adjuvant Substances 0.000 claims description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 2
- 239000003638 chemical reducing agent Substances 0.000 claims description 2
- IAOQICOCWPKKMH-UHFFFAOYSA-N dithieno[3,2-a:3',2'-d]thiophene Chemical compound C1=CSC2=C1C(C=CS1)=C1S2 IAOQICOCWPKKMH-UHFFFAOYSA-N 0.000 claims description 2
- 239000003960 organic solvent Substances 0.000 claims description 2
- HQZPMWBCDLCGCL-UHFFFAOYSA-N tantalum telluride Chemical compound [Te]=[Ta]=[Te] HQZPMWBCDLCGCL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims 3
- VZXTWGWHSMCWGA-UHFFFAOYSA-N 1,3,5-triazine-2,4-diamine Chemical compound NC1=NC=NC(N)=N1 VZXTWGWHSMCWGA-UHFFFAOYSA-N 0.000 claims 2
- 125000000217 alkyl group Chemical group 0.000 claims 2
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 claims 1
- 229910000416 bismuth oxide Inorganic materials 0.000 claims 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims 1
- MWRJCEDXZKNABM-UHFFFAOYSA-N germanium tungsten Chemical compound [Ge].[W] MWRJCEDXZKNABM-UHFFFAOYSA-N 0.000 claims 1
- 238000001465 metallisation Methods 0.000 description 9
- 125000001183 hydrocarbyl group Chemical group 0.000 description 8
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- OAFXFZNYKPMZBJ-UHFFFAOYSA-N copper(1+);phosphane Chemical class P.[Cu+] OAFXFZNYKPMZBJ-UHFFFAOYSA-N 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 4
- 238000000113 differential scanning calorimetry Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 238000005481 NMR spectroscopy Methods 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 description 2
- BDNKZNFMNDZQMI-UHFFFAOYSA-N 1,3-diisopropylcarbodiimide Chemical compound CC(C)N=C=NC(C)C BDNKZNFMNDZQMI-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 2
- 125000002947 alkylene group Chemical group 0.000 description 2
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000706 filtrate Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000011541 reaction mixture Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000005160 1H NMR spectroscopy Methods 0.000 description 1
- DQQNMIPXXNPGCV-UHFFFAOYSA-N 3-hexyne Chemical compound CCC#CCC DQQNMIPXXNPGCV-UHFFFAOYSA-N 0.000 description 1
- LDTSPHKYHWKPDN-UHFFFAOYSA-N 3-tert-butylundec-1-ene Chemical compound C(=C)C(C(C)(C)C)CCCCCCCC LDTSPHKYHWKPDN-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- HPQRSQFZILKRDH-UHFFFAOYSA-M chloro(trimethyl)plumbane Chemical compound C[Pb](C)(C)Cl HPQRSQFZILKRDH-UHFFFAOYSA-M 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000002716 delivery method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- SZAVVKVUMPLRRS-UHFFFAOYSA-N lithium;propane Chemical compound [Li+].C[CH-]C SZAVVKVUMPLRRS-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000004714 phosphonium salts Chemical class 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000012047 saturated solution Substances 0.000 description 1
- 239000012258 stirred mixture Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 150000004772 tellurides Chemical class 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic System
- C07F1/08—Copper compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C257/00—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines
- C07C257/10—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines
- C07C257/14—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines having carbon atoms of amidino groups bound to acyclic carbon atoms
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic System
- C07F1/005—Compounds containing elements of Groups 1 or 11 of the Periodic System without C-Metal linkages
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/869,532 US7166732B2 (en) | 2004-06-16 | 2004-06-16 | Copper (I) compounds useful as deposition precursors of copper thin films |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200606168A TW200606168A (en) | 2006-02-16 |
| TWI397531B true TWI397531B (zh) | 2013-06-01 |
Family
ID=35480908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094111308A TWI397531B (zh) | 2004-06-16 | 2005-04-11 | 有效於作為銅薄膜沉積前驅體之銅（ｉ）化合物 |
Country Status (8)
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US7012292B1 (en) * | 1998-11-25 | 2006-03-14 | Advanced Technology Materials, Inc | Oxidative top electrode deposition process, and microelectronic device structure |
| US7084080B2 (en) * | 2001-03-30 | 2006-08-01 | Advanced Technology Materials, Inc. | Silicon source reagent compositions, and method of making and using same for microelectronic device structure |
| KR102220703B1 (ko) * | 2002-11-15 | 2021-02-26 | 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 | 금속 아미디네이트를 이용한 원자층 증착법 |
| US7396949B2 (en) * | 2003-08-19 | 2008-07-08 | Denk Michael K | Class of volatile compounds for the deposition of thin films of metals and metal compounds |
| US9029189B2 (en) * | 2003-11-14 | 2015-05-12 | President And Fellows Of Harvard College | Bicyclic guanidines, metal complexes thereof and their use in vapor deposition |
| US7166732B2 (en) | 2004-06-16 | 2007-01-23 | Advanced Technology Materials, Inc. | Copper (I) compounds useful as deposition precursors of copper thin films |
| US20060102895A1 (en) * | 2004-11-16 | 2006-05-18 | Hendrix Bryan C | Precursor compositions for forming tantalum-containing films, and tantalum-containing barrier films and copper-metallized semiconductor device structures |
| US9312557B2 (en) * | 2005-05-11 | 2016-04-12 | Schlumberger Technology Corporation | Fuel cell apparatus and method for downhole power systems |
| SG171683A1 (en) | 2006-05-12 | 2011-06-29 | Advanced Tech Materials | Low temperature deposition of phase change memory materials |
| TW200745140A (en) * | 2006-06-02 | 2007-12-16 | Advanced Tech Materials | Copper (I) amidinates and guanidinates, mixed ligand copper complexes, and compositions for chemical vapor deposition, atomic layer deposition, and rapid vapor deposition of copper |
| US7547631B2 (en) * | 2006-07-31 | 2009-06-16 | Rohm And Haas Electronic Materials Llc | Organometallic compounds |
| US7488435B2 (en) * | 2006-08-07 | 2009-02-10 | E. I. Du Pont De Nemours And Company | Copper(I) complexes and processes for deposition of copper films by atomic layer deposition |
| WO2008057616A2 (en) * | 2006-11-02 | 2008-05-15 | Advanced Technology Materials, Inc. | Antimony and germanium complexes useful for cvd/ald of metal thin films |
| US7750173B2 (en) | 2007-01-18 | 2010-07-06 | Advanced Technology Materials, Inc. | Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films |
| US7964746B2 (en) * | 2007-03-30 | 2011-06-21 | Advanced Technology Materials, Inc. | Copper precursors for CVD/ALD/digital CVD of copper metal films |
| EP2857549A3 (en) * | 2007-04-09 | 2015-07-15 | President and Fellows of Harvard College | Chemical vapour deposition of thin films using metal amidinate precursors |
| US8142847B2 (en) * | 2007-07-13 | 2012-03-27 | Rohm And Haas Electronic Materials Llc | Precursor compositions and methods |
| WO2009012341A2 (en) * | 2007-07-16 | 2009-01-22 | Advancaed Technology Materials, Inc. | Group iv complexes as cvd and ald precursors for forming metal-containing thin films |
| US8834968B2 (en) | 2007-10-11 | 2014-09-16 | Samsung Electronics Co., Ltd. | Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device |
| KR101458953B1 (ko) | 2007-10-11 | 2014-11-07 | 삼성전자주식회사 | Ｇｅ（Ⅱ）소오스를 사용한 상변화 물질막 형성 방법 및상변화 메모리 소자 제조 방법 |
| SG178736A1 (en) * | 2007-10-31 | 2012-03-29 | Advanced Tech Materials | Amorphous ge/te deposition process |
| US20090130466A1 (en) * | 2007-11-16 | 2009-05-21 | Air Products And Chemicals, Inc. | Deposition Of Metal Films On Diffusion Layers By Atomic Layer Deposition And Organometallic Precursor Complexes Therefor |
| US20090215225A1 (en) | 2008-02-24 | 2009-08-27 | Advanced Technology Materials, Inc. | Tellurium compounds useful for deposition of tellurium containing materials |
| FR2929449A1 (fr) * | 2008-03-28 | 2009-10-02 | Stmicroelectronics Tours Sas S | Procede de formation d'une couche d'amorcage de depot d'un metal sur un substrat |
| WO2010065874A2 (en) | 2008-12-05 | 2010-06-10 | Atmi | High concentration nitrogen-containing germanium telluride based memory devices and processes of making |
| US20110124182A1 (en) * | 2009-11-20 | 2011-05-26 | Advanced Techology Materials, Inc. | System for the delivery of germanium-based precursor |
| WO2011119175A1 (en) | 2010-03-26 | 2011-09-29 | Advanced Technology Materials, Inc. | Germanium antimony telluride materials and devices incorporating same |
| US9190609B2 (en) | 2010-05-21 | 2015-11-17 | Entegris, Inc. | Germanium antimony telluride materials and devices incorporating same |
| US20130084407A1 (en) * | 2011-09-29 | 2013-04-04 | American Air Liquide, Inc. | Plasma-enhanced deposition of copper-containing films for various applications using amidinate copper precursors |
| WO2014070682A1 (en) | 2012-10-30 | 2014-05-08 | Advaned Technology Materials, Inc. | Double self-aligned phase change memory device structure |
| KR102276421B1 (ko) * | 2013-11-29 | 2021-07-12 | 기소세쵸 가부시키가이샤 | 구리계 막 형성방법 |
| US11161867B2 (en) | 2016-11-08 | 2021-11-02 | Adeka Corporation | Compound, raw material for forming thin film, method for manufacturing thin film, and amidine compound |
| CN106498361B (zh) * | 2016-11-22 | 2019-03-19 | 江南大学 | 一种以肼类为还原剂单原子层沉积技术生长金属Cu的方法 |
| TWI773839B (zh) | 2017-10-14 | 2022-08-11 | 美商應用材料股份有限公司 | 用於beol 互連的ald 銅與高溫pvd 銅沉積的集成 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004046417A2 (en) * | 2002-11-15 | 2004-06-03 | President And Fellows Of Harvard College | Atomic layer deposition using metal amidinates |
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| WO2004046417A2 (en) * | 2002-11-15 | 2004-06-03 | President And Fellows Of Harvard College | Atomic layer deposition using metal amidinates |
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| KR101224316B1 (ko) | 2013-01-18 |
| WO2006009590A1 (en) | 2006-01-26 |
| EP1765834A1 (en) | 2007-03-28 |
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| US20080233276A1 (en) | 2008-09-25 |
| US7166732B2 (en) | 2007-01-23 |
| US20050281952A1 (en) | 2005-12-22 |
| IL180072A0 (en) | 2007-05-15 |
| CN101084229A (zh) | 2007-12-05 |
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| TW200606168A (en) | 2006-02-16 |
| US7241912B2 (en) | 2007-07-10 |
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| US20100133689A1 (en) | 2010-06-03 |
| US7531031B2 (en) | 2009-05-12 |
| EP1765834A4 (en) | 2010-10-06 |
| KR20120105057A (ko) | 2012-09-24 |
| US20070116876A1 (en) | 2007-05-24 |
| US20050283012A1 (en) | 2005-12-22 |
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