TWI396599B - 利用使用45度角光束分裂定向裝置及方法之組光束分離之x及y正交切方向處理 - Google Patents

利用使用45度角光束分裂定向裝置及方法之組光束分離之x及y正交切方向處理 Download PDF

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TWI396599B
TWI396599B TW095108817A TW95108817A TWI396599B TW I396599 B TWI396599 B TW I396599B TW 095108817 A TW095108817 A TW 095108817A TW 95108817 A TW95108817 A TW 95108817A TW I396599 B TWI396599 B TW I396599B
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Leonard Kandt
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
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    • BPERFORMING OPERATIONS; TRANSPORTING
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    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067Dividing the beam into multiple beams, e.g. multifocusing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • B23K26/083Devices involving movement of the workpiece in at least one axial direction
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • B23K26/083Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/40Removing material taking account of the properties of the material involved
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/40Semiconductor devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26

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Description

利用使用45度角光束分裂定向裝置及方法之組光束分離之X及Y正交切方向處理
本發明係關於半導體晶圓之處理。本發明尤其係更關於一種用於使用一第一光束及一第二光束在一平面工件上劃一對平行切之裝置及方法,該第一光束及一第二光束在工件上各具有一撞擊點,其中該第一及第二撞擊點係相對於由該工件定義之X及Y軸呈對角線定位。
在微電子工業中,半導體材料的複數片通常係使用切塊鋸來鋸成個別之晶圓。利用切塊鋸會有若干可能之相關事項,包括熱及/或機械引發之斷裂及或二相鄰層間之黏著失效、機械強度不良、濕氣吸收及/或由於使用冷卻劑、紋理影響及導熱率不良產生之時間相依表現。在此等可能之相關事項中,熱及/或機械引發之斷裂及/或黏著失效及濕氣吸收係具關鍵性。大拉力及剪應力係在切區域處賦予,且可導致斷裂及/或造成二相鄰層間分層的黏著失效。此外,在鋸期間使用冷卻劑可導致濕氣吸收及時間相依表現。
一種減少機械引發分層之潛在問題的方法係減少鋸速率。然而,此減少產量及生產力。此外,與濕氣吸收有關之潛在問題仍會存在。
另一方法係使用產生單一光束的雷射元件在欲鋸之區域中切或劃一比鋸要寬之溝渠。該光束劃穿例如介電質常數(低k)及金屬層,且在矽處停止。在雷射劃線後,該鋸係用以切穿矽及分離該等晶圓。由雷射移除的區域作為斷裂停止且確保此等斷裂不會傳播至晶圓內且可能影響已完成包含在晶圓上的積體電路的電效能。使用單一雷射光束的缺點係需要在低k及金屬層中切出一相當寬的溝渠。
再另一方法係使用產生至少二光束之雷射元件劃線以製成二溝渠,在欲鋸之區域的每一側上各一溝渠。此消除切一寬溝渠的潛在問題。此一系統的操作大體上如圖6中所示。圖6顯示一平面工件200。一對雷射光束在撞擊點202及204處撞擊工件200。撞擊點202及204係與工件200的X軸206正交。一對平行溝渠可藉由沿X軸206移動工件200或雷射光束而在工件200上劃線。
然而,若需求沿著Y軸208劃平行溝渠,則使用二或以上光束以切平行溝渠需要再定向該工件200及/或撞擊點202、204之額外處理時間。此再定向增加處理時間。
當平面工件係利用X軸及Y軸定向時,一X及Y正交切裝置用於在一平面工件上劃一對平行切。該裝置包括一產生至少二光束的雷射元件,該等光束包括一第一光束及第二光束。該第一光束及第二光束在第一及第二撞擊點撞擊該工件。該第一及第二撞擊點係相對於該工件之X及Y軸呈對角線定位。至少一驅動器移動該雷射元件或工件,以在工件上劃平行切。
一X及Y正交切裝置10係顯示於圖1中。裝置10係用於在一平面工件200上劃一對平行切12、14。在一較佳具體實施例中,該平面工件200係一半導體晶圓。平面工件200係沿一X軸20及一Y軸22定向。如圖示,平面工件200可定位在一平台23上。裝置10包括一產生至少二光束的雷射元件24,該等光束包括一第一光束26及一第二光束28。第一及第二光束26及28可穿過定位光學器件29,以將雷射光束26及28導向工件200。各第一光束26及第二光束28在平面工件200上分別具有一撞擊點30、32,其中第一及第二撞擊點30,32係相對於平面工件200的X及Y軸20、22呈對角線地定位。在較佳具體實施例中,裝置10亦包括一第一驅動器34,以相對於X軸20移動平台23且因此移動平面工件200。當平面工件200沿X軸20移動時,一對平行切會在X軸20之方向中製成。該較佳具體實施例亦包括一第二驅動器36,以相對於Y軸22移動平面工件200。
雷射元件24包括一雷射38。較佳的係,雷射38係一二極體激升雷射且能高速聚焦及/或高解析度聚焦。雷射38的輸出穿過光學器件40,其將雷射38的輸出分成第一光束26及第二光束28。第一及第二光束26及28係藉由定位光學器件29再導引至平面工件200上,以在撞擊點30,32處於平面工件200上撞擊。光學器件40及定位光學器件29可各包括例如一或多個透鏡及/或鏡。
雷射元件24包括第一快門42以控制第一光束26,及一第二快門44以控制第二光束28。雷射元件24亦包括一控制器46,以操作快門42及44。較佳的係,快門42及44係定位在雷射元件24處,但應理解可將快門定位在定位光學器件29處。
參考圖3,透過快門42及44的操作,一由第一光束26製成之切12的第一端46與一由第二光束28製成之切14的第一端48,及/或一由第一光束26製成之切12的第二端50與一由第二光束28製成之切14的第二端52,相對於平面工件200之X軸20、Y軸22及/或邊緣54的對準,係如圖1及3中所示地執行。藉由控制快門42及44,切12、14可因此在相對於X軸20、Y軸22或工件邊緣54之需求或所需位置處開始或結束。
如圖2中所見,定位光學器件29將第一撞擊點30與第二撞擊點32彼此呈對角線地定位在與平面工件200之X及Y軸20、22呈四十五(45)度的角度60處。結果係沿撞擊點30、32之X軸20的分離62係大體上等於沿Y軸22之分離64。
因為X軸分離62係大體上等於Y軸分離64,具有大體上相等分離之大體上平行切12、14可沿著X軸20及/或Y軸22製成,無須再定向平面工件200、雷射光束26、28、光學器件40、及/或定位光學器件29。鋸切區66(陰影部分)係因此藉由切12、14定義,如圖3中所示。
在圖1的實例中,第一驅動器34沿Y軸22移動平台23,以沿Y軸22劃平行切。第二驅動器36沿X軸20移動定位光學器件29,以沿X軸20劃平行切。本發明涵蓋驅動器34、36係藉由一馬達驅動,其可為一線性馬達、一無刷線性馬達、一電流計、一移動磁鐵電流計、任何此類適合之驅動機構、或其任何組合。
X及Y正交切裝置10A的第二較佳組態係可在圖4中見到。在第二較佳具體實施例中,一雷射元件24A係安裝至驅動器36A。在此組態中,驅動器36A除定位光學器件29A外亦移動整體雷射元件24A。
現參考圖5,其顯示一使用圖1之裝置10用於X及Y正交切方向處理的製程。該製程包括導引第一光束及第二光束以在一第一及第二撞擊點處撞擊該工件,該第一及第二撞擊點係在步驟100處相對於工件的X及Y軸呈對角線定位。相對於平面工件200移動第一光束26及第二光束28及/或相對於第一光束26及第二光束28移動平面工件200係在步驟100發生。在步驟104係控制第一光束26的切12。在步驟106係控制第二光束的切14。
根據此範例,步驟104包括將第一光束26之切12的第一端46相對於第二光束28之切14的第一端48對準,及/或將第一光束26之切12的第二端50相對於第二光束28之切14的第二端52對準。進一步根據此範例,步驟106包括將切14的第一端48相對於切12的第一端46對準,及/或將切14的第二端52相對於切12的第二端50對準。
若步驟108之回應係需求或需要額外之切12、14,該製程會重覆返回步驟100。若不需求或需要額外之切12、14,製程在步驟110結束。
雖然本發明已結合目前被認為最實際且較佳具體實施例進行說明,但應明瞭本發明並不限於所揭示的具體實施例,而係旨於涵蓋包括在隨附申請專利範圍之精神與範疇內的各種修改及等效配置,該範疇應作最廣泛的解釋,以包含法律所允許的所有此等修改及等效結構。
10...X及Y正交切裝置
10...AX及Y正交切裝置
12...平行切
14...平行切
20...X軸
22...Y軸
23...平台
24...雷射元件
24A...雷射元件
26...第一光束
28...第二光束
29...定位光學器件
29A...定位光學器件
30...第一撞擊點
32...第二撞擊點
34...第一驅動器
36...第二驅動器
36A...驅動器
38...雷射
40...光學器件
42...第一快門
44...第二快門
46...控制器/第一端
48...第一端
50...第二端
52...第二端
54...工件邊緣
60...角度
62...分離
64...分離
66...鋸切區
200...工件
202...撞擊點
204...撞擊點
206...X軸
208...Y軸
本文之說明參考附圖,其中全部視圖中相同的參考數字代表相同部分,且其中:圖1係一依據本文所揭示之一具體實施例的X及Y正交切裝置之概要透視圖;圖2係一顯示在本文所揭示之工件上的一對雷射撞擊點之工件的簡化平面圖;圖3係一顯示在工件上之平行劃出的切之工件的簡化平面圖;圖4係一具有與本文所揭示的驅動器關連之雷射元件的X及Y正交切裝置之組態的簡化透視圖;圖5係可使用圖1之裝置實行的製程之方塊圖;及圖6係顯示定位在一依據先前技術之工件上的光束之工件的簡化平面圖。
10...X及Y正交切裝置
20...X軸
22...Y軸
23...平台
24...雷射元件
26...第一光束
28...第二光束
29...定位光學器件
30...第一撞擊點
32...第二撞擊點
34...第一驅動器
36...第二驅動器
38...雷射
40...光學器件
42...第一快門
44...第二快門
46...控制器/第一端
54...工件邊緣

Claims (13)

  1. 一種X及Y正交切裝置,其用於在一平面工件上劃一對平行切,該工件平面具有一X軸及一Y軸,其中該Y軸係垂直於該X軸,該裝置包含:一雷射元件,該雷射元件產生沿正交於該X軸及該Y軸中之每一者之一Z軸之包括一第一光束及一第二光束之至少二光束,該第一光束及該第二光束同時地在一第一及一第二撞擊點處撞擊該工件,該第一及第二撞擊點係相對於該工件平面之該X及該Y軸呈對角線定位;至少一驅動器,其係可操作以雙向地沿該X軸移動該第一及該第二光束或工件,以及雙向地沿該Y軸移動該第一及該第二撞擊點以沿該X軸劃一第一對平行切及沿該Y軸劃一第二對平行切;及一控制器,其用於在該第一光束及該第二光束同時地在該第一及該第二撞擊點處撞擊該工件時維持該第一及該第二光束之一相對位置,使得在沿該工件之該X軸劃該第一對平行切及沿該工件之該Y軸劃該第二對平行切過程中,該等光束之該第一及該第二撞擊點維持其相對位置,其中該第二對平行切係垂直於該第一對平行切。
  2. 如請求項1之裝置,其中該雷射元件包含:一第一快門,其係用以控制該第一光束;及一第二快門,其係用以控制該第二光束。
  3. 如請求項1之裝置,其中包含一控制器,其用下列方式中之至少一者來對準,將一由該第一光束製成之一切的 第一端對準一由該第二光束製成之一切的第一端,及將一由該第一光束製成之該切的第二端對準一由該第二光束製成之該切的第二端。
  4. 如請求項1之裝置,其中該至少一驅動器包含一第一驅動器,其用於雙向地沿該Y軸移動該工件。
  5. 如請求項4之裝置,進一步包含:一定位光學器件,其沿該Z軸被安裝且係用以於該工件處導引該雷射光束;及該至少一驅動器包含一第二驅動器,其係用以雙向地沿該X軸移動該定位光學器件。
  6. 如請求項5之裝置,其中該雷射元件包含至少一二極體激升雷射。
  7. 如請求項1之裝置,進一步包含:定位光學器件,其係用於導引該第一光束及該第二光束以在該第一及該第二撞擊點處撞擊該工件。
  8. 如請求項7之裝置,其進一步包含:一第一快門,其係用於控制該第一光束;及一第二快門,其係用於控制該第二光束。
  9. 如請求項8之裝置,其中該控制器,其係用於控制該第一及第二快門以下列方式中之至少一者來對準,將一由該第一光束製成之一切的第一端對準一由該第二光束製成之一切的第一端,及將一由該第一光束製成之該切的第二端對準一由該第二光束製成之該切的第二端。
  10. 如請求項7之裝置,其中該定位光學器件包含一鏡及一透鏡中至少其一,以定位該等撞擊點。
  11. 如請求項1之裝置,其中該雷射元件係位於遠離該至少一驅動器。
  12. 如請求項1之裝置,其中該至少一驅動器包含一第一驅動器及一第二驅動器,且該雷射元件係安裝至該第一驅動器。
  13. 一種用於在一沿一X軸及垂直於該X軸之一Y軸定向之平面工件上劃一對平行切之方法,其係使用一產生至少一第一光束及一第二光束之雷射元件,該方法包含:沿正交於該X軸及該Y軸中之每一者之一Z軸導引該第一光束及該第二光束以同時地在一第一撞擊點及一第二撞擊點處撞擊該工件,該第一及第二撞擊點係相對於該工件之該X及Y軸呈對角線定位;至少執行以相對於該工件移動該第一及第二光束以及該第一及第二撞擊點,或相對於該第一及第二光束以及該第一及第二撞擊點移動該工件二方式中之至少一者以控制該第一光束沿該X軸及該Y軸其中之一者之一方向之一第一切及控制該第二光束沿該X軸及該Y軸其中之一者之一方向之一第一切,以劃一第一對平行切;在劃該第一對平行切後,維持該工件相對於該X軸及該Y軸之一定位;及以相對於該工件移動該第一及第二光束以及該第一及第二撞擊點,或以相對於該第一及第二撞擊點移動該工件,執行此二方式中之至少一者以控制該第一光束沿該X軸及該Y軸其中之一者之一方向之一第二切及控制該第 二光束沿該X軸及該Y軸其中之一者之一方向之一第二切,同時保持該工件相對於該X軸及該Y軸的方位以刻劃一第二對平行切,其中該第二對平行切係垂直於該第一對平行切。
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