TWI392056B - 半導體裝置及其製造方法 - Google Patents

半導體裝置及其製造方法 Download PDF

Info

Publication number
TWI392056B
TWI392056B TW098106059A TW98106059A TWI392056B TW I392056 B TWI392056 B TW I392056B TW 098106059 A TW098106059 A TW 098106059A TW 98106059 A TW98106059 A TW 98106059A TW I392056 B TWI392056 B TW I392056B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
conductive member
manufacturing
gas
film
Prior art date
Application number
TW098106059A
Other languages
English (en)
Chinese (zh)
Other versions
TW200952119A (en
Inventor
松岡孝明
Original Assignee
東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京威力科創股份有限公司 filed Critical 東京威力科創股份有限公司
Publication of TW200952119A publication Critical patent/TW200952119A/zh
Application granted granted Critical
Publication of TWI392056B publication Critical patent/TWI392056B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/077—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers on sidewalls or on top surfaces of conductors

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW098106059A 2008-03-12 2009-02-25 半導體裝置及其製造方法 TWI392056B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US6924408P 2008-03-12 2008-03-12

Publications (2)

Publication Number Publication Date
TW200952119A TW200952119A (en) 2009-12-16
TWI392056B true TWI392056B (zh) 2013-04-01

Family

ID=41062143

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098106059A TWI392056B (zh) 2008-03-12 2009-02-25 半導體裝置及其製造方法

Country Status (5)

Country Link
US (1) US8278205B2 (https=)
JP (1) JP5143769B2 (https=)
KR (1) KR20090097827A (https=)
CN (1) CN101533799B (https=)
TW (1) TWI392056B (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120049239A (ko) * 2009-06-26 2012-05-16 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법
US9340880B2 (en) 2009-10-27 2016-05-17 Silcotek Corp. Semiconductor fabrication process
WO2012047945A2 (en) * 2010-10-05 2012-04-12 Silcotek Corp. Wear resistant coating, article, and method
US20120273948A1 (en) * 2011-04-27 2012-11-01 Nanya Technology Corporation Integrated circuit structure including a copper-aluminum interconnect and method for fabricating the same
US11292924B2 (en) 2014-04-08 2022-04-05 Silcotek Corp. Thermal chemical vapor deposition coated article and process
US10876206B2 (en) 2015-09-01 2020-12-29 Silcotek Corp. Thermal chemical vapor deposition coating
CN107887323B (zh) 2016-09-30 2020-06-05 中芯国际集成电路制造(北京)有限公司 互连结构及其制造方法
KR102616489B1 (ko) 2016-10-11 2023-12-20 삼성전자주식회사 반도체 장치 제조 방법
CN108231659B (zh) 2016-12-15 2020-07-07 中芯国际集成电路制造(北京)有限公司 互连结构及其制造方法
CN106783730B (zh) * 2016-12-28 2020-09-04 上海集成电路研发中心有限公司 一种形成空气隙/铜互连的方法
JP6441989B2 (ja) 2017-04-27 2018-12-19 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、プログラムおよび記録媒体
US11161324B2 (en) 2017-09-13 2021-11-02 Silcotek Corp. Corrosion-resistant coated article and thermal chemical vapor deposition coating process
KR102866846B1 (ko) * 2019-05-20 2025-09-30 램 리써치 코포레이션 SiCxOy를 위한 핵생성 층으로서 SixNy
WO2020252306A1 (en) 2019-06-14 2020-12-17 Silcotek Corp. Nano-wire growth
US12473635B2 (en) 2020-06-03 2025-11-18 Silcotek Corp. Dielectric article
US11978668B2 (en) 2021-09-09 2024-05-07 Samsung Electronics Co., Ltd. Integrated circuit devices including a via and methods of forming the same
US20250273454A1 (en) * 2024-02-28 2025-08-28 Applied Materials, Inc. Microwave assisted passivation layer removal

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200536051A (en) * 2004-04-30 2005-11-01 Taiwan Semiconductor Mfg Reliability improvement of sioc etch stop with trimethylsilane gas passivation in cu damascene interconnects
US20060046479A1 (en) * 2004-04-19 2006-03-02 Applied Materials, Inc. Adhesion improvement for low k dielectrics to conductive materials

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08213343A (ja) * 1995-01-31 1996-08-20 Sony Corp 半導体装置およびその製造方法
EP1077479A1 (en) * 1999-08-17 2001-02-21 Applied Materials, Inc. Post-deposition treatment to enchance properties of Si-O-C low K film
JP2001185549A (ja) * 1999-12-24 2001-07-06 Toshiba Corp 半導体装置の製造方法
KR100762863B1 (ko) * 2000-06-30 2007-10-08 주식회사 하이닉스반도체 확산방지 티타늄-실리콘-질소 막을 이용한 구리금속배선방법
JP2002319618A (ja) * 2001-04-20 2002-10-31 Anelva Corp 配線用Ｃｕ膜の形成方法及び形成装置
JP2003045960A (ja) * 2001-08-01 2003-02-14 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP4293752B2 (ja) * 2002-02-28 2009-07-08 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP2003347299A (ja) * 2002-05-24 2003-12-05 Renesas Technology Corp 半導体集積回路装置の製造方法
JP2004071956A (ja) 2002-08-08 2004-03-04 Toshiba Corp 半導体装置の製造方法
JP4454242B2 (ja) * 2003-03-25 2010-04-21 株式会社ルネサステクノロジ 半導体装置およびその製造方法
EP1691403A4 (en) * 2003-12-04 2009-04-15 Tokyo Electron Ltd METHOD FOR CLEANING THE CONDUCTIVE COATING SURFACE OF A SEMICONDUCTOR SUBSTRATE
JP4473824B2 (ja) * 2005-01-21 2010-06-02 株式会社東芝 半導体装置の製造方法
US8211794B2 (en) * 2007-05-25 2012-07-03 Texas Instruments Incorporated Properties of metallic copper diffusion barriers through silicon surface treatments

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060046479A1 (en) * 2004-04-19 2006-03-02 Applied Materials, Inc. Adhesion improvement for low k dielectrics to conductive materials
TW200536051A (en) * 2004-04-30 2005-11-01 Taiwan Semiconductor Mfg Reliability improvement of sioc etch stop with trimethylsilane gas passivation in cu damascene interconnects

Also Published As

Publication number Publication date
US8278205B2 (en) 2012-10-02
US20090230558A1 (en) 2009-09-17
CN101533799A (zh) 2009-09-16
CN101533799B (zh) 2011-10-05
TW200952119A (en) 2009-12-16
JP2009218585A (ja) 2009-09-24
KR20090097827A (ko) 2009-09-16
JP5143769B2 (ja) 2013-02-13

Similar Documents

Publication Publication Date Title
TWI392056B (zh) 半導體裝置及其製造方法
US6261951B1 (en) Plasma treatment to enhance inorganic dielectric adhesion to copper
US7944053B2 (en) Semiconductor device and method of manufacturing the same
TWI446448B (zh) 積體電路結構之製造方法
CN106463456A (zh) 用于形成互连结构的钝化保护的方法
US20140216342A1 (en) Processing system for combined metal deposition and reflow anneal for forming interconnect structures
US20080026579A1 (en) Copper damascene process
CN103839876B (zh) 半导体器件的制造方法及装置
TW201347089A (zh) 半導體裝置之製造方法、記憶媒體及半導體裝置
US7531902B2 (en) Multi-layered metal line of semiconductor device having excellent diffusion barrier and method for forming the same
JP2011124472A (ja) 半導体装置の製造方法
JP2005150280A (ja) 半導体装置の製造方法及び半導体製造装置
TWI424473B (zh) 半導體裝置及其製造方法
KR101767538B1 (ko) 진보된 배선들을 위한 유전체 캡핑 배리어로서의 금속-함유 필름들
US7338903B2 (en) Sequential reducing plasma and inert plasma pre-treatment method for oxidizable conductor layer
US9502290B2 (en) Oxidation-free copper metallization process using in-situ baking
JP2009117673A (ja) 半導体装置およびその製造方法
JP2004071956A (ja) 半導体装置の製造方法
CN101295670A (zh) 制作半导体装置的方法
JP2000277611A (ja) 半導体装置の製造方法
KR20050007699A (ko) 반도체 소자 및 반도체 소자의 금속 배선층 형성 방법
KR20050059942A (ko) 반도체 소자의 금속배선 형성방법

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees