TWI389321B - 程式化非揮發性記憶體之方法 - Google Patents

程式化非揮發性記憶體之方法 Download PDF

Info

Publication number
TWI389321B
TWI389321B TW097125647A TW97125647A TWI389321B TW I389321 B TWI389321 B TW I389321B TW 097125647 A TW097125647 A TW 097125647A TW 97125647 A TW97125647 A TW 97125647A TW I389321 B TWI389321 B TW I389321B
Authority
TW
Taiwan
Prior art keywords
substrate
drain
source
voltage
applying
Prior art date
Application number
TW097125647A
Other languages
English (en)
Chinese (zh)
Other versions
TW201003927A (en
Inventor
Ting Chang Chang
Shih Ching Chen
Fu Yen Jian
Original Assignee
Acer Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Acer Inc filed Critical Acer Inc
Priority to TW097125647A priority Critical patent/TWI389321B/zh
Priority to AU2008252029A priority patent/AU2008252029A1/en
Priority to EP08170425A priority patent/EP2144250A1/fr
Priority to US12/314,129 priority patent/US7835192B2/en
Priority to JP2008329424A priority patent/JP2010020878A/ja
Priority to KR1020090006130A priority patent/KR20100006102A/ko
Publication of TW201003927A publication Critical patent/TW201003927A/zh
Application granted granted Critical
Publication of TWI389321B publication Critical patent/TWI389321B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
TW097125647A 2008-07-08 2008-07-08 程式化非揮發性記憶體之方法 TWI389321B (zh)

Priority Applications (6)

Application Number Priority Date Filing Date Title
TW097125647A TWI389321B (zh) 2008-07-08 2008-07-08 程式化非揮發性記憶體之方法
AU2008252029A AU2008252029A1 (en) 2008-07-08 2008-12-02 Method for programing a nonvolatile memory
EP08170425A EP2144250A1 (fr) 2008-07-08 2008-12-02 Procédé de programmation d'une mémoire non volatile
US12/314,129 US7835192B2 (en) 2008-07-08 2008-12-04 Method for programming a nonvolatile memory
JP2008329424A JP2010020878A (ja) 2008-07-08 2008-12-25 不揮発性メモリのプログラミング方法
KR1020090006130A KR20100006102A (ko) 2008-07-08 2009-01-23 불휘발성 메모리의 프로그래밍 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW097125647A TWI389321B (zh) 2008-07-08 2008-07-08 程式化非揮發性記憶體之方法

Publications (2)

Publication Number Publication Date
TW201003927A TW201003927A (en) 2010-01-16
TWI389321B true TWI389321B (zh) 2013-03-11

Family

ID=40352009

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097125647A TWI389321B (zh) 2008-07-08 2008-07-08 程式化非揮發性記憶體之方法

Country Status (6)

Country Link
US (1) US7835192B2 (fr)
EP (1) EP2144250A1 (fr)
JP (1) JP2010020878A (fr)
KR (1) KR20100006102A (fr)
AU (1) AU2008252029A1 (fr)
TW (1) TWI389321B (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9413349B1 (en) 2015-04-01 2016-08-09 Qualcomm Incorporated High-K (HK)/metal gate (MG) (HK/MG) multi-time programmable (MTP) switching devices, and related systems and methods
PT3298224T (pt) 2015-05-18 2019-10-25 In & Tec Srl Dobradiça de baixo volume.
CN112382327B (zh) * 2020-11-13 2021-07-23 中天弘宇集成电路有限责任公司 B4快闪存储器的编程方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5258949A (en) 1990-12-03 1993-11-02 Motorola, Inc. Nonvolatile memory with enhanced carrier generation and method for programming the same
JPH06268231A (ja) * 1993-03-16 1994-09-22 Sony Corp 浮遊ゲート型不揮発性半導体記憶装置
JPH08263992A (ja) 1995-03-24 1996-10-11 Sharp Corp 不揮発性半導体記憶装置の書き込み方法
US5703808A (en) * 1996-02-21 1997-12-30 Motorola, Inc. Non-volatile memory cell and method of programming
JPH11297865A (ja) * 1998-03-18 1999-10-29 Micronics Internatl Co Ltd フローティングゲートメモリデバイス
US6005809A (en) 1998-06-19 1999-12-21 Taiwan Semiconductor Manufacturing Company, Ltd. Program and erase method for a split gate flash EEPROM
US6282123B1 (en) * 1998-12-21 2001-08-28 Lattice Semiconductor Corporation Method of fabricating, programming, and erasing a dual pocket two sided program/erase non-volatile memory cell
US6307781B1 (en) 1999-09-30 2001-10-23 Infineon Technologies Aktiengesellschaft Two transistor flash memory cell
JP4697993B2 (ja) * 1999-11-25 2011-06-08 スパンション エルエルシー 不揮発性半導体メモリ装置の制御方法
JP3502015B2 (ja) * 2000-06-05 2004-03-02 沖電気工業株式会社 半導体記憶装置
KR100454117B1 (ko) 2001-10-22 2004-10-26 삼성전자주식회사 소노스 게이트 구조를 갖는 낸드형 비휘발성 메모리소자의구동방법
US7031196B2 (en) 2002-03-29 2006-04-18 Macronix International Co., Ltd. Nonvolatile semiconductor memory and operating method of the memory
US6937511B2 (en) 2004-01-27 2005-08-30 Macronix International Co., Ltd. Circuit and method for programming charge storage memory cells
US7133316B2 (en) 2004-06-02 2006-11-07 Macronix International Co., Ltd. Program/erase method for P-channel charge trapping memory device
US7180125B2 (en) 2004-08-16 2007-02-20 Chih-Hsin Wang P-channel electrically alterable non-volatile memory cell
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
KR100741466B1 (ko) * 2006-05-22 2007-07-20 삼성전자주식회사 비휘발성 기억 장치의 동작 방법
US20090109762A1 (en) * 2007-10-31 2009-04-30 Powerchip Semiconductor Corp. Method for programming non-volatile memory

Also Published As

Publication number Publication date
KR20100006102A (ko) 2010-01-18
US7835192B2 (en) 2010-11-16
US20100034027A1 (en) 2010-02-11
TW201003927A (en) 2010-01-16
AU2008252029A1 (en) 2010-01-28
JP2010020878A (ja) 2010-01-28
EP2144250A1 (fr) 2010-01-13

Similar Documents

Publication Publication Date Title
US7394702B2 (en) Methods for erasing and programming memory devices
US7515479B2 (en) Nonvolatile semiconductor storage device and method for writing therein
JP2007142398A (ja) 単層ポリシリコン不揮発性メモリーセルの駆動方法
US20140092688A1 (en) Non-Volatile Semiconductor Storage Device
US20070247924A1 (en) Methods for erasing memory devices and multi-level programming memory device
US6965145B2 (en) Non-volatile memory device
US20090016118A1 (en) Non-volatile dram with floating gate and method of operation
JP2005012219A (ja) Ｓｏｎｏｓメモリ素子及びそのデータ消去方法
US8295094B2 (en) Method of operating non-volatile memory cell
TWI389321B (zh) 程式化非揮發性記憶體之方法
JPH04105368A (ja) 不揮発性半導体記憶装置及びその書き込み・消去方法
TWI397073B (zh) 記憶胞的操作方法
CN110546708B (zh) 快闪存储器的编程电路、编程方法及快闪存储器
US20080031039A1 (en) Devices and operation methods for reducing second bit effect in memory device
TWI423261B (zh) A method of making SONOS transistors both switch and memory
JP2001167587A (ja) 半導体記憶装置及び記憶方法
US7554851B2 (en) Reset method of non-volatile memory
TW201237876A (en) Nonvolatile memory device and method of programming a nonvolatile memory cell
JPH1065029A (ja) 不揮発性メモリセルの電気的消去方法
JP3324691B2 (ja) 不揮発性半導体記憶装置および不揮発性半導体記憶装置のデータ書き換え方法
JP2004006549A (ja) 不揮発性半導体記憶装置における情報の消去方法
JP2009021305A (ja) 不揮発性メモリトランジスタ
Hsu et al. A novel channel-program–erase technique with substrate transient hot carrier injection for SONOS NAND flash application
JPH03285358A (ja) 不揮発性半導体記憶装置の駆動方法
CN106611617B (zh) 非挥发性闪存的有效编程方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees