TWI388019B - 封裝結構之製法 - Google Patents
封裝結構之製法 Download PDFInfo
- Publication number
- TWI388019B TWI388019B TW098129496A TW98129496A TWI388019B TW I388019 B TWI388019 B TW I388019B TW 098129496 A TW098129496 A TW 098129496A TW 98129496 A TW98129496 A TW 98129496A TW I388019 B TWI388019 B TW I388019B
- Authority
- TW
- Taiwan
- Prior art keywords
- package
- layer
- package substrate
- full
- manufacturing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7424—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self-supporting substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/65—Shapes or dispositions of interconnections
- H10W70/654—Top-view layouts
- H10W70/655—Fan-out layouts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/68—Shapes or dispositions thereof
- H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/0198—Manufacture or treatment batch processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
- Dicing (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW098129496A TWI388019B (zh) | 2009-09-02 | 2009-09-02 | 封裝結構之製法 |
| JP2009263063A JP5285580B2 (ja) | 2009-09-02 | 2009-11-18 | パッケージ構造の製造方法 |
| US12/871,447 US8222080B2 (en) | 2009-09-02 | 2010-08-30 | Fabrication method of package structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW098129496A TWI388019B (zh) | 2009-09-02 | 2009-09-02 | 封裝結構之製法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201110247A TW201110247A (en) | 2011-03-16 |
| TWI388019B true TWI388019B (zh) | 2013-03-01 |
Family
ID=43625513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098129496A TWI388019B (zh) | 2009-09-02 | 2009-09-02 | 封裝結構之製法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8222080B2 (https=) |
| JP (1) | JP5285580B2 (https=) |
| TW (1) | TWI388019B (https=) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI425886B (zh) * | 2011-06-07 | 2014-02-01 | 欣興電子股份有限公司 | 嵌埋有電子元件之封裝結構及其製法 |
| HK1167067A2 (en) * | 2011-09-06 | 2012-11-16 | Centricam Technologies Limited | A system and method for processing a very wide angle image |
| JP2013214578A (ja) * | 2012-03-30 | 2013-10-17 | Ibiden Co Ltd | 配線板及びその製造方法 |
| JP2014229698A (ja) * | 2013-05-21 | 2014-12-08 | イビデン株式会社 | 配線板及び配線板の製造方法 |
| TWI551207B (zh) * | 2014-09-12 | 2016-09-21 | 矽品精密工業股份有限公司 | 基板結構及其製法 |
| TWI570816B (zh) * | 2014-09-26 | 2017-02-11 | 矽品精密工業股份有限公司 | 封裝結構及其製法 |
| US10504871B2 (en) | 2017-12-11 | 2019-12-10 | Amkor Technology, Inc. | Semiconductor device and manufacturing method thereof |
| US10818636B2 (en) | 2018-08-30 | 2020-10-27 | Advanced Semiconductor Engineering, Inc. | Substrate panel structure and manufacturing process |
| US10624213B1 (en) * | 2018-12-20 | 2020-04-14 | Intel Corporation | Asymmetric electronic substrate and method of manufacture |
| US11545455B2 (en) * | 2019-05-28 | 2023-01-03 | Apple Inc. | Semiconductor packaging substrate fine pitch metal bump and reinforcement structures |
| US11694906B2 (en) | 2019-09-03 | 2023-07-04 | Amkor Technology Singapore Holding Pte. Ltd. | Semiconductor devices and methods of manufacturing semiconductor devices |
| US11605552B2 (en) | 2020-02-21 | 2023-03-14 | Amkor Technology Singapore Holding Pte. Ltd. | Hybrid panel method of manufacturing electronic devices and electronic devices manufactured thereby |
| US11915949B2 (en) | 2020-02-21 | 2024-02-27 | Amkor Technology Singapore Holding Pte. Ltd. | Hybrid panel method of manufacturing electronic devices and electronic devices manufactured thereby |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58111395A (ja) * | 1981-12-25 | 1983-07-02 | 株式会社日立製作所 | 混成集積回路の製造方法 |
| JP4115560B2 (ja) * | 1997-09-22 | 2008-07-09 | シチズンホールディングス株式会社 | 半導体パッケージの製造方法 |
| JP5410660B2 (ja) * | 2007-07-27 | 2014-02-05 | 新光電気工業株式会社 | 配線基板及びその製造方法と電子部品装置及びその製造方法 |
| TWI328423B (en) * | 2007-09-14 | 2010-08-01 | Unimicron Technology Corp | Circuit board structure having heat-dissipating structure |
| US10074553B2 (en) * | 2007-12-03 | 2018-09-11 | STATS ChipPAC Pte. Ltd. | Wafer level package integration and method |
| US7790503B2 (en) * | 2007-12-18 | 2010-09-07 | Stats Chippac, Ltd. | Semiconductor device and method of forming integrated passive device module |
| KR101486420B1 (ko) * | 2008-07-25 | 2015-01-26 | 삼성전자주식회사 | 칩 패키지, 이를 이용한 적층형 패키지 및 그 제조 방법 |
-
2009
- 2009-09-02 TW TW098129496A patent/TWI388019B/zh not_active IP Right Cessation
- 2009-11-18 JP JP2009263063A patent/JP5285580B2/ja not_active Expired - Fee Related
-
2010
- 2010-08-30 US US12/871,447 patent/US8222080B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| TW201110247A (en) | 2011-03-16 |
| US20110053318A1 (en) | 2011-03-03 |
| JP5285580B2 (ja) | 2013-09-11 |
| US8222080B2 (en) | 2012-07-17 |
| JP2011054921A (ja) | 2011-03-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI388019B (zh) | 封裝結構之製法 | |
| JP5215587B2 (ja) | 半導体装置 | |
| TWI355034B (en) | Wafer level package structure and fabrication meth | |
| CN102487021B (zh) | 形成用于倒装半导体管芯的焊盘布局的半导体器件和方法 | |
| TWI416636B (zh) | 封裝結構之製法 | |
| US9620482B1 (en) | Semiconductor device and manufacturing method thereof | |
| TWI578490B (zh) | 製造堆疊封裝式半導體封裝的方法 | |
| CN102054714B (zh) | 封装结构的制法 | |
| JP2013110151A (ja) | 半導体チップ及び半導体装置 | |
| TWI500130B (zh) | 封裝基板及其製法暨半導體封裝件及其製法 | |
| TWI388018B (zh) | 封裝結構之製法 | |
| TWI434386B (zh) | 封裝結構之製法 | |
| JP5404513B2 (ja) | 半導体装置の製造方法 | |
| TWI478300B (zh) | 覆晶式封裝基板及其製法 | |
| US11769717B2 (en) | Semiconductor device for reducing concentration of thermal stress acting on bonding layers | |
| US20170278810A1 (en) | Embedded die in panel method and structure | |
| KR101345035B1 (ko) | 반도체 패키지 및 그 제조 방법 | |
| US20100289129A1 (en) | Copper plate bonding for high performance semiconductor packaging | |
| CN102339761B (zh) | 封装结构的制作方法 | |
| TWI405273B (zh) | 封裝結構之製法 | |
| CN102339760B (zh) | 封装结构的制作方法 | |
| JP2021034573A (ja) | 半導体装置 | |
| KR101011898B1 (ko) | 반도체 패키지 | |
| KR20130042938A (ko) | 반도체 칩, 이를 포함하는 반도체 패키지 및 적층형 반도체 패키지 제조방법 | |
| KR100991612B1 (ko) | 반도체 패키지의 제조방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |