TWI386995B - 自矽表面移除不可見矽及不可見碳化矽之方法及用於電漿處理裝置之碳化矽電極 - Google Patents

自矽表面移除不可見矽及不可見碳化矽之方法及用於電漿處理裝置之碳化矽電極 Download PDF

Info

Publication number
TWI386995B
TWI386995B TW094146385A TW94146385A TWI386995B TW I386995 B TWI386995 B TW I386995B TW 094146385 A TW094146385 A TW 094146385A TW 94146385 A TW94146385 A TW 94146385A TW I386995 B TWI386995 B TW I386995B
Authority
TW
Taiwan
Prior art keywords
invisible
plasma
electrode
upper electrode
flow
Prior art date
Application number
TW094146385A
Other languages
English (en)
Chinese (zh)
Other versions
TW200634925A (en
Inventor
梅格尼 安瑞可
凱利 麥克
荷夫堤 羅伯
路潘 米雪兒
Original Assignee
藍姆研究公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 藍姆研究公司 filed Critical 藍姆研究公司
Publication of TW200634925A publication Critical patent/TW200634925A/zh
Application granted granted Critical
Publication of TWI386995B publication Critical patent/TWI386995B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B44—DECORATIVE ARTS
    • B44C—PRODUCING DECORATIVE EFFECTS; MOSAICS; TARSIA WORK; PAPERHANGING
    • B44C1/00—Processes, not specifically provided for elsewhere, for producing decorative surface effects
    • B44C1/22—Removing surface-material, e.g. by engraving, by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Treating Waste Gases (AREA)
TW094146385A 2004-12-23 2005-12-23 自矽表面移除不可見矽及不可見碳化矽之方法及用於電漿處理裝置之碳化矽電極 TWI386995B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/019,464 US7291286B2 (en) 2004-12-23 2004-12-23 Methods for removing black silicon and black silicon carbide from surfaces of silicon and silicon carbide electrodes for plasma processing apparatuses

Publications (2)

Publication Number Publication Date
TW200634925A TW200634925A (en) 2006-10-01
TWI386995B true TWI386995B (zh) 2013-02-21

Family

ID=36615391

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094146385A TWI386995B (zh) 2004-12-23 2005-12-23 自矽表面移除不可見矽及不可見碳化矽之方法及用於電漿處理裝置之碳化矽電極

Country Status (7)

Country Link
US (1) US7291286B2 (https=)
EP (1) EP1827871B1 (https=)
JP (1) JP2008526024A (https=)
KR (1) KR101191697B1 (https=)
CN (1) CN101102909B (https=)
TW (1) TWI386995B (https=)
WO (1) WO2006071556A2 (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8057603B2 (en) * 2006-02-13 2011-11-15 Tokyo Electron Limited Method of cleaning substrate processing chamber, storage medium, and substrate processing chamber
US7902073B2 (en) * 2006-12-14 2011-03-08 Lam Research Corporation Glue layer for hydrofluorocarbon etch
US8702866B2 (en) * 2006-12-18 2014-04-22 Lam Research Corporation Showerhead electrode assembly with gas flow modification for extended electrode life
JP2008235562A (ja) * 2007-03-20 2008-10-02 Taiyo Nippon Sanso Corp プラズマｃｖｄ成膜装置のクリーニング方法
US7578889B2 (en) * 2007-03-30 2009-08-25 Lam Research Corporation Methodology for cleaning of surface metal contamination from electrode assemblies
US8221552B2 (en) * 2007-03-30 2012-07-17 Lam Research Corporation Cleaning of bonded silicon electrodes
US8262800B1 (en) 2008-02-12 2012-09-11 Novellus Systems, Inc. Methods and apparatus for cleaning deposition reactors
WO2010053687A2 (en) * 2008-11-04 2010-05-14 Praxair Technology, Inc. Thermal spray coatings for semiconductor applications
US8591659B1 (en) * 2009-01-16 2013-11-26 Novellus Systems, Inc. Plasma clean method for deposition chamber
DE102009028256B4 (de) 2009-08-05 2019-01-24 Robert Bosch Gmbh Verfahren zum Ätzen von Siliziumcarbid mittels eines Plasmaätzverfahrens und Siliziumcarbidsubstrat
CN101734611B (zh) * 2009-12-16 2011-08-31 北京大学 基于无掩膜深反应离子刻蚀制备黑硅的方法
JP5896915B2 (ja) * 2009-12-18 2016-03-30 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマチャンバで使用される上方電極から表面金属汚染を洗浄するための方法
CN101880914B (zh) * 2010-05-25 2012-09-12 中国科学院微电子研究所 利用等离子体浸没离子注入制备黑硅的方法
JP5596141B2 (ja) * 2010-05-27 2014-09-24 株式会社日立ハイテクノロジーズ 画像処理装置、荷電粒子線装置、荷電粒子線装置調整用試料、およびその製造方法
JP6057292B2 (ja) * 2013-06-13 2017-01-11 学校法人関西学院 ＳｉＣ半導体素子の製造方法
CN103681246B (zh) * 2013-12-30 2017-10-17 国家电网公司 一种SiC材料清洗方法
CN105710082B (zh) * 2014-12-02 2018-03-06 中国科学院上海硅酸盐研究所 一种去除金属纳米线表面有机物及氧化层的方法
JP6639022B2 (ja) * 2014-12-22 2020-02-05 昭和電工株式会社 炭化珪素堆積物のクリーニング方法
JP6269709B2 (ja) 2016-03-28 2018-01-31 株式会社Sumco 清浄度評価方法、洗浄条件決定方法、およびシリコンウェーハの製造方法
KR101914289B1 (ko) * 2016-08-18 2018-11-01 주식회사 티씨케이 투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품 및 그 제조방법
WO2021231456A1 (en) 2020-05-13 2021-11-18 Tokyo Electron Limited Method for dry etching silicon carbide films for resist underlayer applications
CN115354298A (zh) * 2022-07-05 2022-11-18 湖南红太阳光电科技有限公司 一种pecvd设备石墨舟清洗系统
CN115318219B (zh) * 2022-10-12 2023-08-18 常州烯聚新材料科技有限公司 适用闪光焦耳加热工艺的针状电极放电管及焦耳加热设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5865896A (en) * 1993-08-27 1999-02-02 Applied Materials, Inc. High density plasma CVD reactor with combined inductive and capacitive coupling
US20050001276A1 (en) * 2003-07-03 2005-01-06 The Regents Of The University Of California Selective etching of silicon carbide films

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US112294A (en) * 1871-02-28 peters
US19081A (en) * 1858-01-12 Spencer b
JPS56125838A (en) * 1980-03-07 1981-10-02 Hitachi Ltd Etching method
US4426246A (en) * 1982-07-26 1984-01-17 Bell Telephone Laboratories, Incorporated Plasma pretreatment with BCl3 to remove passivation formed by fluorine-etch
US4498953A (en) * 1983-07-27 1985-02-12 At&T Bell Laboratories Etching techniques
US4595484A (en) * 1985-12-02 1986-06-17 International Business Machines Corporation Reactive ion etching apparatus
US5215619A (en) * 1986-12-19 1993-06-01 Applied Materials, Inc. Magnetic field-enhanced plasma etch reactor
US5565038A (en) * 1991-05-16 1996-10-15 Intel Corporation Interhalogen cleaning of process equipment
US6124211A (en) * 1994-06-14 2000-09-26 Fsi International, Inc. Cleaning method
AU2683995A (en) * 1994-09-02 1996-03-27 Stichting Voor De Technische Wetenschappen Process for producing micromechanical structures by means of reactive ion etching
US5585012A (en) * 1994-12-15 1996-12-17 Applied Materials Inc. Self-cleaning polymer-free top electrode for parallel electrode etch operation
US5665203A (en) * 1995-04-28 1997-09-09 International Business Machines Corporation Silicon etching method
US5888906A (en) * 1996-09-16 1999-03-30 Micron Technology, Inc. Plasmaless dry contact cleaning method using interhalogen compounds
JP3568749B2 (ja) * 1996-12-17 2004-09-22 株式会社デンソー 半導体のドライエッチング方法
WO1998032163A1 (en) * 1997-01-22 1998-07-23 California Institute Of Technology Gas phase silicon etching with bromine trifluoride
US6090304A (en) * 1997-08-28 2000-07-18 Lam Research Corporation Methods for selective plasma etch
US6033997A (en) * 1997-12-29 2000-03-07 Siemens Aktiengesellschaft Reduction of black silicon in semiconductor fabrication
US6635185B2 (en) * 1997-12-31 2003-10-21 Alliedsignal Inc. Method of etching and cleaning using fluorinated carbonyl compounds
US6290779B1 (en) * 1998-06-12 2001-09-18 Tokyo Electron Limited Systems and methods for dry cleaning process chambers
US6394104B1 (en) * 1998-08-28 2002-05-28 Taiwan Semiconductor Manufacturing Company Method of controlling and improving SOG etchback etcher
KR20010112277A (ko) * 1999-12-23 2001-12-20 조셉 제이. 스위니 높은 개구 영역의 실리콘 구조체들의 이방성 에칭을 위한불소 기재 플라즈마 에칭 방법
US6391788B1 (en) * 2000-02-25 2002-05-21 Applied Materials, Inc. Two etchant etch method
US6500356B2 (en) * 2000-03-27 2002-12-31 Applied Materials, Inc. Selectively etching silicon using fluorine without plasma
US6514378B1 (en) * 2000-03-31 2003-02-04 Lam Research Corporation Method for improving uniformity and reducing etch rate variation of etching polysilicon
US6489249B1 (en) * 2000-06-20 2002-12-03 Infineon Technologies Ag Elimination/reduction of black silicon in DT etch
JP3606198B2 (ja) * 2000-12-14 2005-01-05 株式会社日立製作所 プラズマ処理装置
JP3946640B2 (ja) * 2001-01-22 2007-07-18 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US20020177321A1 (en) * 2001-03-30 2002-11-28 Li Si Yi Plasma etching of silicon carbide
US6527911B1 (en) * 2001-06-29 2003-03-04 Lam Research Corporation Configurable plasma volume etch chamber
US6776851B1 (en) * 2001-07-11 2004-08-17 Lam Research Corporation In-situ cleaning of a polymer coated plasma processing chamber
TW567554B (en) * 2001-08-08 2003-12-21 Lam Res Corp All dual damascene oxide etch process steps in one confined plasma chamber
US6846726B2 (en) * 2002-04-17 2005-01-25 Lam Research Corporation Silicon parts having reduced metallic impurity concentration for plasma reaction chambers
US6767836B2 (en) * 2002-09-04 2004-07-27 Asm Japan K.K. Method of cleaning a CVD reaction chamber using an active oxygen species
US6730600B2 (en) * 2002-09-27 2004-05-04 Agere Systems, Inc. Method of dry etching a semiconductor device in the absence of a plasma
US6630395B1 (en) * 2002-10-24 2003-10-07 International Business Machines Corporation Methods for fabricating electrical connections to semiconductor structures incorporating low-k dielectric materials
US20040112544A1 (en) 2002-12-16 2004-06-17 Hongwen Yan Magnetic mirror for preventing wafer edge damage during dry etching

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5865896A (en) * 1993-08-27 1999-02-02 Applied Materials, Inc. High density plasma CVD reactor with combined inductive and capacitive coupling
US20050001276A1 (en) * 2003-07-03 2005-01-06 The Regents Of The University Of California Selective etching of silicon carbide films

Also Published As

Publication number Publication date
WO2006071556A2 (en) 2006-07-06
EP1827871B1 (en) 2016-03-09
CN101102909B (zh) 2011-11-30
EP1827871A4 (en) 2009-09-16
US7291286B2 (en) 2007-11-06
TW200634925A (en) 2006-10-01
EP1827871A2 (en) 2007-09-05
JP2008526024A (ja) 2008-07-17
WO2006071556A3 (en) 2007-01-04
KR101191697B1 (ko) 2012-10-16
KR20070091661A (ko) 2007-09-11
CN101102909A (zh) 2008-01-09
US20060157448A1 (en) 2006-07-20

Similar Documents

Publication Publication Date Title
TWI386995B (zh) 自矽表面移除不可見矽及不可見碳化矽之方法及用於電漿處理裝置之碳化矽電極
US7226869B2 (en) Methods for protecting silicon or silicon carbide electrode surfaces from morphological modification during plasma etch processing
US6014979A (en) Localizing cleaning plasma for semiconductor processing
US7344993B2 (en) Low-pressure removal of photoresist and etch residue
US6062237A (en) Polymer removal from top surfaces and sidewalls of a semiconductor wafer
KR101226297B1 (ko) 포토레지스트 및 에칭 찌꺼기를 저압 제거하는 애싱 방법
KR100848522B1 (ko) 실리콘 에칭 및 챔버 세정 프로세스의 일체화
JP2004247755A (ja) キセノンを用いたプラズマエッチング
JPH0642480B2 (ja) 半導体ウエファの背面を処理する方法
JP4716566B2 (ja) 基板上の銅酸化物を還元するプラズマ加工チャンバ、及び、その方法
KR100593826B1 (ko) 드라이 에칭 방법
US6787475B2 (en) Flash step preparatory to dielectric etch
JP3559691B2 (ja) 半導体装置の製造方法
CN115274388B (zh) 一种无晶圆等离子腔室的清洗方法
KR20040074356A (ko) 박막 형성 방법 및 박막 증착 장치
KR100851455B1 (ko) 챔버 조건에 대한 공정 민감도를 감소시키는 방법
JPH05160078A (ja) ドライエッチング方法
JPH0754143A (ja) スパッタリング装置

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent