TWI373674B - Wiring laminated film and wiring circuit - Google Patents
Wiring laminated film and wiring circuit Download PDFInfo
- Publication number
- TWI373674B TWI373674B TW096138415A TW96138415A TWI373674B TW I373674 B TWI373674 B TW I373674B TW 096138415 A TW096138415 A TW 096138415A TW 96138415 A TW96138415 A TW 96138415A TW I373674 B TWI373674 B TW I373674B
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- wiring
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- low
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- resistance
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- 229910052751 metal Inorganic materials 0.000 claims description 47
- 239000002184 metal Substances 0.000 claims description 47
- 229910045601 alloy Inorganic materials 0.000 claims description 26
- 239000000956 alloy Substances 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 12
- 229910000521 B alloy Inorganic materials 0.000 claims description 11
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 235000012054 meals Nutrition 0.000 claims 1
- 239000010410 layer Substances 0.000 description 130
- 239000010408 film Substances 0.000 description 45
- 238000000034 method Methods 0.000 description 23
- 239000010949 copper Substances 0.000 description 14
- 238000005530 etching Methods 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 239000007788 liquid Substances 0.000 description 11
- 239000004973 liquid crystal related substance Substances 0.000 description 10
- 238000011156 evaluation Methods 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 239000002253 acid Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000011247 coating layer Substances 0.000 description 7
- 239000007769 metal material Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910018507 Al—Ni Inorganic materials 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910021642 ultra pure water Inorganic materials 0.000 description 4
- 239000012498 ultrapure water Substances 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 210000003516 pericardium Anatomy 0.000 description 2
- -1 phenolic amine Chemical class 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000003196 chaotropic effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-M dihydrogenphosphate Chemical compound OP(O)([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-M 0.000 description 1
- QKIUAMUSENSFQQ-UHFFFAOYSA-N dimethylazanide Chemical compound C[N-]C QKIUAMUSENSFQQ-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 210000005069 ears Anatomy 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 235000003642 hunger Nutrition 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910017053 inorganic salt Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 210000004379 membrane Anatomy 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N methyl monoether Natural products COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000858 nanotransfer moulding Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53219—Aluminium alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
Description
1373674 九、發明說明: 【發明所屬之技術領域】 . 本發明係有關液晶顯示器等顯示裝置中之元件的配線 -電路形成技術,特別是,有關適合用於實現低電阻之配線 • 電路之配線用積層膜。 【先前技術】 近年來,液晶顯示器係使用於各種電子機器裝置之顯 •不上,特別是在液晶顯示器之需求擴大方面非常顯著的, 而正進行更大型之液晶顯示器開發。此液晶顯示器之顯示 裝置已知有例如薄膜電晶體(Thin Film Transistor,以下簡 稱為TFT),而構成此TFT之配線材料一般是使用鋁(Al) 糸合金。 例如:主動矩陣(active matrix)型之液晶顯示器之情 形,做為交換(switching)元件之TFT係由lT〇(indium Tin Oxide)或者iz〇(Indium Zinc Oxide)等透明電極(以下,有 鲁時稱為透明電極層)、與由八卜Cu等低電阻金屬材料所形 成之配線電路(以下,有時稱為配線電路層)來構成元件。 而且,在此種元件構造中,由於配線電路為有與透明電極 接&之。卩分、或與TFT内之n+ — Si(璃摻雜之半導體層)接 合之部分存在,故形成由鉬(M〇)、鎢(W)、或鈦(Ti)等高融 點金屬材料組成之所謂之覆蓋(cap)層。 此覆蓋層係有做為由A卜Cu等低電阻材料組成之配 線電路的保護膜之機能。此外,在如n+_Si之半導體層與 配線電路接合時,因製造過程中之熱程序,而具有防止A1 319671 5 1373674 等低電阻金屬材料與Si相互擴散之機能4外,在接合透 明電極層與A1等低電阻金屬材料之情形中,為了能實現歐 姆接合,而以覆蓋層進行隔開。
在此’一面參照第1圖,同時具體說明關於上述之元 件構造之一例。在第1圖中係表示液晶顯示器中之a— Si 型之TFT剖面示意圖。在此TFT構造中,已於玻璃基板j 上形成有構成閘極部G之由A1系合金配線材料所成之電 極配線電路層2、與由Mo或Mo—W等組成之覆蓋層3。 於是,在此閘極部G上,設置有保護該閘極部用之SiNx 之閘絕緣膜4。此外,在此閘絕緣膜4上,已經由依序堆 積a—Si半導體層5、通道保護膜層6、n+ —以半導體層7、 覆蓋層3、電極配線電路層2、覆蓋層3,且由形成適當圖 案’而設置有汲極部D與源極部S。在此汲極部D與源極 部S上’被覆元件之表面平坦化用樹脂或siNx之絕緣膜 4’。並且,在源極部s側,於絕緣層4,上設置接觸孔ch, 且在該部分上形成ITO或IZO之透明電極層7,。當在此種 電極配線電路層2中使用A1系合金配線材料時,已成為使 π —Si半導體層7與電極配線層2之間或接觸孔CH中之 透明電極層7’與電極配線層2之間,以覆蓋層隔開之構造 (例如.參照非專利文獻1)。 [非專利文獻1]内田龍男編著,「次世代液晶顯示器 技術」’初版,工業調查會股份有限公司,1994年11月】 日,P.36— 38 【發明内容】 6 319671 (發明欲解決的課題) 在如第1圖所示之元件構造中, 之M0或W等之覆罢声纟U電阻值較大 厲材科也無妨,構成元#脖 ^ 之傾6 # 時線電阻必然地會呈現增大 之傾向。特別是,當製造第 卢馇Q 1 、 芏/世代之液晶電視、然後 攸第8世代邁向將來之大型化之液晶電視時,由 大型化而配線電路長戶箅★ 也延長,故70件之配線電阻係預 更為南電阻化。基於此種原因而正迫切期盼較以往一 :使用做為覆蓋層之鳩或w等高融點材料電阻為低,且 此防止形成配線電路之低電阻金屬與Si互相 與透明電極層直接接合之新穎覆蓋層。 、次者月匕 斑本發明係以如上述之原因為背景所做者,且為提供能 貫現較低電阻值之配線用電路形成技術者特別是以提 出即使為大型化之液晶顯示器也可確實地將配線電阻低 電阻化之配線用積層膜為目的。 (解決課題的手段) 為了解決上述課題,本發明係有關積層有低電阻金屬 層、與含有Ni 〇.5at%至l〇.〇at%之Al —Ni系合金層之配 線用積層膜。 本發明中之低電阻金屬層係以含有Au、Ag、Cll、Ai 中至少一種以上之元素為佳。 此外,本發明中之低電阻金屬層,係以比電阻值在3 # Ω . cm以下為佳。 本發明係有關在上述本發明配線用積層膜上施加蝕刻 7 31967] 1373674 處理所得之配線電路。進—步而言,係有關具有該配線電 路之元件。此外,本發明中之元件係Ai — Ni系合金層之一 部為亦可與透明電極層及/或半導體層直接接合者。 【實施方式】 以下,說明關於本發明中之最佳實施例,但本發明並 非限定於下述實施例。
本發明相關配線用積層臈係積層有低電阻金屬層、與 Al-Ni系合金層者。此A1—Ni系合金係對於熱歷程之耐 熱性優良,且具備不易產生所謂小丘(hin〇ck)或凹坑 (dnnple)之’因在熱處理時產生之應力應變而於膜表面上 所形成之凸起或坑狀之缺陷的特性。而且,AU夺人金 係可與ϊτο等透明電極層直接接合、或者可與n+ —^等 半導體層直接接合者。再者,芒盘u Δ1 行有右與純Α1相比較則其電阻值 雖有些許增加,桓若與一直以央估田供*话—
直乂不使用做為覆盖層之Mo、W 或Ti等高融點金屬材料相比時,則A1_Ni系合金之電阻 值係肩當低。並且,此A1 — Ni系合#與純Ai、純η、或 ,等相比較’由於耐藥品特性優良,故能發揮做為覆 蓋層之機能。因此,使用A1 — Ni李八全甩㊉y _ 尔σ I層取代以往做為覆 蓋層使用之Mo或W等高融點今屬好粗 I屬材枓,而做為覆蓋層, 即能降低配線電阻。 具體之Al—Νι …0,置、/\ 1 —
Ni-Β(棚)合金、A卜Ni—c(碳)合金、A1—犯―則⑷合 金、A】一Ni — La(鋼)合金等。而且’此川含量係以在〇.以 %至lO.Oat%為佳。此外,當伟用+ Γ田便用Nd La時,Ni含量係 319671 8 1373674 以使含量在0.5_至2._為佳^、則七之含量 係以在o.lat%紅0at%為佳。此等ai —%系合金係容易 使A】—犯系合金層本身之比電阻值在. em以下, 同時’由於也δ實現具備良好之元件特性之直接接合,若 精由在此# A1-Ni系合金層上積層有低電阻金屬層之配 線用積層膜而形成配線電路時,則能降低構成—等各種 元件時之配線電阻。 並且’此Al-Ni系合金中尤以A1—川―B合金且含 有B(爛)0.iat%至〇.8at%者較佳。若為此種組成之a卜犯 4合金時’則可與IT0或IZ〇等透明電極層直接接合; 也可與n Si等半導體層直接接合,而可形成盘透 :電極層或者半導體層直接接合時之接合電阻值低、料 熱性也優良之元件。當採用此A1 —Ni_B合金時,以州 =量在3侧以上,且B含量在〇.術找以下為佳。而以 ^含量在3._至6._,且β含量在〇2〇_至〇_ 。車乂佳。因若為此種組成之A1 —Ni —B合金,則會形成對 於疋件之製造過程中之各熱歷程具備優良之财熱特性者。 :者’本發明之A1系合金,從低電阻特性之觀點來看,以 δ有A】本身在75at%以上為佳。 而且’與本發明之配線用積層膜中之A1 一见系人金戶 ㈣之低電阻金屬層’係以含有Au、Ag、Cu、二二
種以上之7〇素為佳。而且,此種低電阻金屬層係以比電 阻值在W Ω .⑽以下為佳。本發明中之低電阻金屬声书 只要為以往做為配線電路材料使用之純A]、純cu、純A 319671 9 1373674 ,純Au或含有此等元素之合金、或者比電阻值在3# Ω .cm 以下之金屬材料就可以而無特別限制。再者,當使用純A! .做為低電阻金屬層時,即可以同一姓刻液將本發明之配線 •用積層膜-起進行餘刻,而能試圖將配線電路形成程序簡 化二因此,從使配線電阻之低電阻化與配線電路形成程序 之簡化並存之觀點來看’在低電阻金屬層中以使用純A】 為佳® • 本發明之配線用積層膜係能依濺鍍(sputtering)法、 CVD法、印刷法等成膜。其中尤以減鍍法為佳。例如·當 以藏鍍法進行時,能適用基板過熱溫度在室溫(3〇。〇至= t:、DC在3至30W/cm2、壓力在〇 25至〇咖、膜厚在 500至5_ A之條件。此外,關於積層之順序是無特別限 制,可在低電阻金屬層上積層A1—Ni系合金層,相反地, 也可在Al—Ni系合金層上積層低電阻金屬層,且能配合適 用之元件構造或配線電路構造而決定積層之順序。再者, 釀在本發明中之低電阻金屬層或A1 — Ni系合金層中,只要可 ^揮本發明之效果,則存在於成料混人之賤鍍氣體成分 等不可避免之混入物就不會妨礙。 當依減鍍法進行本發明之配線用積層膜之形成時,低 電阻金屬層用之濺鍍乾材(target)係能使用混纟Au、Ag、
Cu、A】等各種金屬且經由溶鑄而製成者,同樣地,a丨— 川系合金靶材,係能使用在鋁中混合州或者進一步混合 第^種添加凡素之各種金屬,且經由溶鑄而製成者。此外, 也能使用依粉末成型法、喷霧成型法等製法所得之減妹 319671 1373674 材。低電阻金>1層及A1 —Ni系合金層之組成也是受減鐘時 之成膜條件而有些微之影響,但容易形成與乾材組成幾乎 相同之組成膜。 • 本發明之配線用積層膜係能依一般之光微影 _ (ph〇t〇lithography)而形成配線電路。在此光微影製程中, =適用在製造TFT等元件時所❹之光a,此塗布條件也 此適用周知者。具體而言例如,使用含有酚醛樹脂之光阻, •且以旋轉塗布機之轉數3_rpm而能使光阻之厚度在i 0 = 此外,關於光阻之預烤㈣處理,也能 適用周知之手法,例如:能使用熱板,且以 °C進行30秒至5分鐘。 TFT ^ ^光U程巾之曝光處理,係能適用在製造 绩膜8已知之—般曝光條件。具體而言例如,紫外 光置係能使總估算曝光量在15至1〇〇 成電路圖案之光罩方面係能使用Cr光罩。 在七 類而在光㈣製財之㈣處理,係能配合光阻種 於納TM: 影液。以含有例如:磷酸氫二納、間石夕 (氫氧化四甲銨)等者為佳"寺別是, ^液溫由於會對光阻之圖案成形性造成大幅影 音,故以在20至4(TC進行為佳。 關於顯影處理後之蝕刻步驟,係 之任一種進行。例如,者以 蝕划、乾蝕刻 ―见系合全hi成之;Γ㈣進行時,能使用適合⑷ 成之蝕刻液、適合低電阻金屬層之組成 319671 11 I3?3674 之蝕刻液進行圖案形成。在A1 — Ni系合金層之蝕刻方面, 能使用磷酸系混酸蝕刻液。此外,當電阻金屬層為以八。 為主成分之組成時,能使用氰系、王水系、碘θ / 液,當以Ag為主成分之組成時,能使用硫酸系硝酸系 爛液。當以Cu為主成分之組成時,能使用氣化鐵:、 乳化銅等酸性姓刻液,或含有無機録鹽等之驗性钱刻液、 或者硫酸—過氧化氫混合蝕刻液等,當以八丨為主成;之組 成時,能使用碟酸系混酸钱刻液。惟,若低電阻 為 =Ai為主成分之組成,貝㈣由磷酸系混酸蝕刻液將曰a丨 處金層與低電阻金屬層一起關。再者,關於敍刻 ^:二只要考量嶋之種類或配線用積層膜 而適當決定即可。 人 特別Γί處理ΐ之光阻剝離處理,使用之光阻剝離液係無 .1疋,且犯適用水系剝離液、非水系剝離液中 Τ。所謂水㈣離液係指由含水之溶液所組成者,: 水令含有有機胺或乙二醇等者。 有在 = 成者’且含有二甲基亞· 1 e)賴等極性溶劑、錢醇胺、 胺類之任一種或去 敗G私寻有機 次者兩種者。以水系剝離液較佳。以含有乙 了醇、有機胺類之水系剝離液更佳,且以含有 離,。能在液溫在4〇至啊、剝在之 心潰1分:::件;進行。剝離處理之方法係能適用 ) 淋洽法,但以淋浴法為佳。 光阻剝綠後之洗淨處理係能適用在製造叮了等元件時 3J9671 12 1373674 已知之一般洗淨條件。具體而言,能適用例如醇洗淨或超 純水洗淨。洗淨方法係有DIP(浸潰)法、淋洛法,但以淋 浴法為佳。 本發明相關配線用基層膜係能適用於TFT、TFD(MIM) 等交換元件’ LED、LCD面板,觸控面板、有機或者無機 EL面板之電極配線、其他抽出用配線等各種應用。 有關本發明相關配線積層膜,以使用純A1做為低電阻 金屬層,使用Mo膜做為其覆蓋層之情形,與使用A1 — Ni 系合金膜之情形舉例做說明。當使用Mo做為覆蓋層、使 用純A1做為低電阻金屬層時(Al/Mo構造),相對於閘絕 緣膜之SiNx成膜時基板加熱溫度在3〇〇°C至350°C,為了 防止在低電阻金屬層之純A1上產生小丘等缺陷,而在被覆 絕緣膜之侧上需要厚度500 A之Mo覆蓋層。在此種情形, 配線長度100吋之閘配線電阻之理論值為3 〇2χ1〇4Ω。然 而,在此Al/Mo構造中,有時會產生邊緣小丘,因此可 罪性可說是並不甚高。於是,當使用與M〇相同厚度之A1 —Ni系合金(例如:A1_3 〇at% Ni_〇 4at% B合金)於覆蓋 層時,閘配線電阻係降低成2.89χ1〇4Ω,而可以使配線電 阻值降低4% 。而且,當使低電阻金屬層之純A】與Α1 — =系,金積層時,因純八丨與A1 —Ni系合金之熱膨脹係數 幾乎完全相等’所以可抑制邊緣小丘產生,而成為使用 Mo做為覆蓋層之較佳者。 (貫施例) 在此實施例中,說明關於在使用Cr做為覆蓋層時,與 319671 13 1373674 使用Al-3.0at% Ni-0.4at% B合金之情形中,調查形成 60吋面板之閘配線電路時之配線電阻之結果。低電阻金屬 層係使用純A1(4N)、純Cu(4N)、純Ag(4N)。 形成之閘配線電路係在玻璃基板上將覆蓋層成膜,且 在其上將低電阻金屬層成膜後,在該低電阻配線層上形成 覆蓋層之三層構造者,線寬係使成為1 〇 # m。此外,假想 60吋面板,測定配線長132.5cm之閘配線電阻並進行評 估。評估樣品之製作係按照以下進行。 首先’說明關於在覆蓋層中使用Cr之評估樣品。藉由 磁控濺鍍(magnetron sputtering)裝置,使用Cr合金靶材, 且才又入電力3.0Watt/cm2、氬氣流量i〇〇ccm、壓力〇5pa, 而在玻璃基板上成膜預定厚度(300 A、5〇〇 A、1〇〇〇 A) 之Cr膜(比電阻值12# 〇cm)做為覆蓋層。然後,連續地 在覆蓋層上形成預定厚度(2000 A、3〇〇〇 A)之低電阻金屬 層(純A】、純Cu、純Ag)。此低電阻金屬層係藉由磁控濺 鍍裝置,使用低電阻金屬層(純A1、純Cu、純Ag)用之靶 材,且在投入電力3.0Watt/cm2、氬氣流量1〇〇ccm、壓力 5pa之條件下進行成膜。然後進一步使用&合金乾材, ㈣祕件τ,在低電阻金屬層上成膜與最初成膜 層相同厚_〇Α、5〇〇Α、剛Α)α膜做為 < ^再者,祕之各臈厚係調整_時間而加以控制。 970 · 纟此積層二層之狀態者上’被覆光阻(TFR- 轉數^應化K股)公司製/塗布條件:旋轉塗布機之 叫㈣、目標料後綠厚度1㈣錢行預烤處 319671 14 1373674 理(11(TC,1.5 分鐘)。 然後’配置10/zm寬電路形成用圖案薄膜並進行曝光 =理(Mask Angner MA - 2G : MIKASA(股)公司製 / 曝光條 件接著,以含有濃度_ 、液溫2代之 虱氧化四甲狀㈣顯料(町,簡稱為tmah顯影液) 進行顯影處理。顯影處理後,藉由熱板進行後烤處 C,3分鐘)。 其次’將露出之Cr膜進純刻處理。液係使 ^化納濃度1〇〇g八、鐵氰化(ferdcyanide)卸濃度 〇〇g/L者。姓刻液之液溫係饥。將露出最外層之心 膜蝕刻處理後,藉由超純水進行洗淨處理。 接著,將去除最表層之Cr膜而露出之低電阻金屬層進 2钱刻。當低電阻金屬層為純AlBf,使用AU昆酸姓刻液(容 1比/磷酸:·[醋酸:水,:i : 2 : ”。當低電阻金 屬層為純Cu日^,使用氣化銅溶液。當低電阻金屬層為純 Ag之情形,使用0.5M硫酸溶液之蝕刻液(室溫)。 " 、然後’在低電阻金屬層姓刻處理後,藉纟超純水進行 洗淨處理,且藉由上述Cr蝕刻液將最下層之心膜姓刻, 再次藉由超純水進行洗淨處理。之後,使用総剝離液 (ST106:東京應化工業(股)公司製)進行光阻去除,且使用 異丙醇去除殘留之剝離液後,進行水洗、乾燥處理❶如此 進行,且按照表1所示製作,有覆蓋層/低電阻配線層/ 覆蓋層,並具備有 Cr/A1/Cr、Cr/Cu/Cr、Cr/Aag/
Cr _種類,且各層厚度不同之閘配線電路之評估樣品。 319671 15 1373674 f方面,當使用AJ—3侧Ν!·—〇域B合金做為 之評估樣品係按照下述進行。首先,藉由磁㈣ :裝置’使用Α1-3·_ Ni—〇姻B合金㈣,且投入 ^•力3.0Watt/cm、氬氣流量1〇〇_、璧力〇❿,而在 玻璃基板上成膜預定厚度(3〇〇 A、500 A '幻之A1 B合錢(比電阻值3心Qcm)做為覆蓋層。然後, ,·貝地在覆盍層上形成預定厚度(2_ A、3刪幻之低電 阻金屬層(純A卜純Cu、純Ag)。此低電阻金屬層之形成 係以與上述相同條件進行。然後進一步使用A!—3 〇⑽犯 B 0金靶材,且以上述濺鍍條件’在低電阻金屬 層上成膜與最初成膜之覆蓋層相同厚度(300 A、5〇〇 A、 1000 A)之Al—Ni —B合金膜做為覆蓋層。再者,成膜之 各膜厚係調整濺鍍時間而予以控制。 有關光阻塗布、曝光、顯像、蝕刻處理、光阻剝離處 理’基本上與製作上述心膜之覆蓋層之評估樣品以相同條 件進行。‘准’關於覆蓋層之钱刻,由於為HB合金 膜,故使用A1混酸蝕刻液(容量比/磷酸:硝酸:醋酸: 水=16: 1:2: 1)。此外,當低電阻金屬層為純…時,將 覆蓋層/低電阻金屬層/覆蓋層三層—起關。如此進
行,且按照表1所示製作,有覆蓋層/低電阻配線層/覆 蓋層,並具備有 Al —Ni—B/Al/Ai—Ni—B、A1—Ni—B /Cu/Al-Ni—B、Al-Ni—B/Ag/Al~Ni—B 之三種 類’且各層厚度不同之閘配線電路之評估樣品。 關於如以上進行製作成之評估樣品,測定其配線電阻 319671 16 1373674 值4配線電喊之駭法係,做為評估樣品,使達與6〇 吋面板同等之配線全長,製作如第2圖所示之梳狀圖案(ι〇 寬配線在梳狀ffi案之端子間進行測定。配線電阻值 之測定結果如表1及表2所示。 [表1]
[表2] 覆蓋層 Al-0. 2B -1. 5Ni (3. 2 m Q cm) Al-0. 4B-5. ONi (4. 2 u Q cm) 低電阻 金屬層 300A/ M /300A 50〇A/ M /300A ~T〇o〇A 厂 M /1000A 300A/ M /300A 500A/ M /300A 1000A/ M /1000A A 1 2000A 15.8 14.5 10.1 16.6 15. 6 1 1 . 6 3000.^ 11.2 10.5 8. 5 11.9 11.8 9 . 〇 C u 2000A 1 1 · 8 11.5 8 . 8 12.2 11.5 9 . 1 3000 A 2000A 8 . 5 8 . 8 8 · 1 8 . 7 —6.6 — 7 π 8. 6 8. 0 6. 8 A g 3000A 6. 3 6. 0 * · u 5. 4 9.1 6. 3 8. 9 6. 2 8. 0 5. 7 從表1及表2所示之結果來看’若將覆蓋層為A1—Ni —B合金膜之情形與Cr膜之情形相比,則在低電阻金屬層 為純A1時之A1 — Ni - B合金膜覆蓋層,配線電阻值最多 降低30% 。此外’當低電阻金屬層為純Cu時,配線電阻 值隶多降低23% 。並且’當低電阻金屬層為純Ag時,配 線電阻值最多降低19% 。 319671 17 1J /JO/4 明電=之'與形成透 題。關於此IT〇接合性:製二耳:在,用上时 .,表作克耳文(ke】v!n)元件之測試樣 二咐進行熱處理知分鐘 二=以樣品之端子部連續通電(3m 此時之電阻測定條件#. 彳疋电丨 測m分 之大氣中’在所謂壽命加速 Ί式條件(依照職5003 : i 974、表 !加速測試之有效率的進行方法與其事實=次可: 者發行處J-Techno(股)))下读 件下,在m1σ 丁,在此哥命加速測試條 =在各㈣樣品’㈣變化至測 接::之:之在^ 小時也未故障之測試樣條件下即使超過250 果,以具備各覆蓋層之低;阻配線 =:=其結 合可靠性皆係良好。 I層與ΙΤ0直接接合之接 (產業上之利用可能性) 根據本發明,由於未使用以往 一 點金屬材料,故能降低構 Υ等高融 使為大型化之液晶顯示器也可確實之:上^ 匕:此外’由於不使用資源少之Μ。或且 才料,故可穩定地供給TFT等元件。 门.’、* 【圖式簡單說明】 第1圖係TFT概略剖面圖。 第2圖係評估樣品之概略平面圖。 31967] 1373674 Γ主要元件符號說明】 1 玻璃基板 2 電極配線電路層 3 覆蓋層 4 閘絕緣膜 4, 絕緣膜 5 a — Si半導體層 6 通道保護膜層 7 n+ -Si半導體層 7, 透明電極層 CH 接觸孔 D 汲極部 G 閘極部 S 源極部 19 31967)
Claims (1)
- i 川 074 第096138415號專利申請案 1〇1年6月13日修正替換頁 十、申請專利範圍: 一種配線用積層膜,係積層有低電阻金屬層、與含有 Ni 〇.5at% 至 10_0at% 及 Β 〇至 〇 8 ⑽之 μ —犯 —B糸合金層。 2.如申請專利範圍第】項之配線用積層膜,其中,低電阻 金屬層係含有Au、Ag、Cu、A1中至少一種以上之元素。 2申π專利㈣第丨項或第2項之配線用積層膜,其 中,低電阻金屬層係比電阻值在3# Ω .⑽以下。 4·二種配線電路,係在中請專利範圍第i項至第3項令任 項之配線用積層膜上施加飯刻處理而得者。 種疋件’係具有如申請專利範圍第4項之配線電路。 6·如申請專利範圍第5項之元件,其中,Al-Ni-B系合 金層之一部分與透明電極層及/或半導體層直接接合。319671修正本
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JP5865634B2 (ja) | 2011-09-06 | 2016-02-17 | 三菱電機株式会社 | 配線膜の製造方法 |
WO2015118947A1 (ja) * | 2014-02-07 | 2015-08-13 | 株式会社神戸製鋼所 | フラットパネルディスプレイ用配線膜 |
US20160307799A1 (en) * | 2015-04-15 | 2016-10-20 | Advanced Semiconductor Engineering, Inc. | Semiconductor substrates, semiconductor packages and processes of making the same |
JP6562089B2 (ja) * | 2016-02-01 | 2019-08-21 | 株式会社リコー | 電界効果型トランジスタ及びその製造方法、表示素子、表示装置、システム |
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