TWI371340B - Polishing pad, method of producing the same and method of producing semiconductor device by using the same - Google Patents

Polishing pad, method of producing the same and method of producing semiconductor device by using the same

Info

Publication number
TWI371340B
TWI371340B TW095106611A TW95106611A TWI371340B TW I371340 B TWI371340 B TW I371340B TW 095106611 A TW095106611 A TW 095106611A TW 95106611 A TW95106611 A TW 95106611A TW I371340 B TWI371340 B TW I371340B
Authority
TW
Taiwan
Prior art keywords
same
producing
semiconductor device
polishing pad
producing semiconductor
Prior art date
Application number
TW095106611A
Other languages
English (en)
Other versions
TW200640612A (en
Inventor
Tsuyoshi Kimura
Yoshiyuki Nakai
Masahiro Watanabe
Original Assignee
Toyo Tire & Rubber Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2004380604A external-priority patent/JP2006186239A/ja
Application filed by Toyo Tire & Rubber Co filed Critical Toyo Tire & Rubber Co
Publication of TW200640612A publication Critical patent/TW200640612A/zh
Application granted granted Critical
Publication of TWI371340B publication Critical patent/TWI371340B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B24D3/28—Resins or natural or synthetic macromolecular compounds
    • B24D3/32—Resins or natural or synthetic macromolecular compounds for porous or cellular structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49995—Shaping one-piece blank by removing material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T409/00—Gear cutting, milling, or planing
    • Y10T409/30—Milling
    • Y10T409/303752—Process
    • Y10T409/303808—Process including infeeding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T409/00—Gear cutting, milling, or planing
    • Y10T409/30—Milling
    • Y10T409/304536—Milling including means to infeed work to cutter
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T83/00—Cutting
    • Y10T83/02—Other than completely through work thickness
    • Y10T83/0304—Grooving

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Turning (AREA)
TW095106611A 2004-12-28 2006-02-27 Polishing pad, method of producing the same and method of producing semiconductor device by using the same TWI371340B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004380604A JP2006186239A (ja) 2004-12-28 2004-12-28 研磨パッドおよび半導体デバイスの製造方法
JP2005145599A JP3769581B1 (ja) 2005-05-18 2005-05-18 研磨パッドおよびその製造方法

Publications (2)

Publication Number Publication Date
TW200640612A TW200640612A (en) 2006-12-01
TWI371340B true TWI371340B (en) 2012-09-01

Family

ID=36383723

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095106611A TWI371340B (en) 2004-12-28 2006-02-27 Polishing pad, method of producing the same and method of producing semiconductor device by using the same

Country Status (7)

Country Link
US (2) US20090075568A1 (zh)
JP (1) JP3769581B1 (zh)
KR (1) KR101214687B1 (zh)
CN (1) CN101175603B (zh)
MY (1) MY141334A (zh)
TW (1) TWI371340B (zh)
WO (1) WO2006123463A1 (zh)

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TWI739321B (zh) * 2013-11-04 2021-09-11 美商應用材料股份有限公司 具有磨蝕粒於其中的印刷化學機械研磨墊及其製造方法與設備

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CN101422882B (zh) * 2007-10-31 2015-05-20 智胜科技股份有限公司 研磨垫及研磨方法
US8083570B2 (en) * 2008-10-17 2011-12-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad having sealed window
JP5242427B2 (ja) * 2009-01-20 2013-07-24 東洋ゴム工業株式会社 研磨パッド及びその製造方法
CN102301455A (zh) * 2009-01-27 2011-12-28 因诺派德公司 包含形成图案的结构区域的化学机械平坦化垫
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WO2012008252A1 (ja) 2010-07-12 2012-01-19 Jsr株式会社 化学機械研磨パッドおよび化学機械研磨方法
JPWO2012077592A1 (ja) * 2010-12-07 2014-05-19 Jsr株式会社 化学機械研磨パッドおよびそれを用いた化学機械研磨方法
JP5766943B2 (ja) * 2010-12-10 2015-08-19 学校法人立命館 研磨パッド
CN103648717A (zh) * 2011-07-15 2014-03-19 东丽株式会社 研磨垫
JP5893413B2 (ja) * 2012-01-17 2016-03-23 東洋ゴム工業株式会社 積層研磨パッドの製造方法
TWI671161B (zh) * 2012-04-02 2019-09-11 美商湯瑪士衛斯有限公司 用於離心鑄造聚合物拋光墊之方法及系統及由該方法製得之拋光墊
US10722997B2 (en) 2012-04-02 2020-07-28 Thomas West, Inc. Multilayer polishing pads made by the methods for centrifugal casting of polymer polish pads
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KR102350350B1 (ko) * 2014-04-03 2022-01-14 쓰리엠 이노베이티브 프로퍼티즈 컴파니 폴리싱 패드 및 시스템과 이의 제조 및 사용 방법
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KR101835090B1 (ko) * 2017-05-29 2018-03-06 에스케이씨 주식회사 다공성 폴리우레탄 연마패드 및 이를 사용하여 반도체 소자를 제조하는 방법
US10857647B2 (en) 2017-06-14 2020-12-08 Rohm And Haas Electronic Materials Cmp Holdings High-rate CMP polishing method
US10777418B2 (en) * 2017-06-14 2020-09-15 Rohm And Haas Electronic Materials Cmp Holdings, I Biased pulse CMP groove pattern
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KR102079944B1 (ko) * 2018-09-04 2020-02-21 정상희 셀 커팅용 보호시트 및 그 제조 방법
CN109291471B (zh) * 2018-09-18 2021-05-07 株洲时代新材料科技股份有限公司 一种厚制件玻璃钢层合板切割打磨加工方法
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CN109824854B (zh) * 2018-12-27 2021-09-28 湖北鼎汇微电子材料有限公司 一种抛光垫
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Also Published As

Publication number Publication date
KR20080005558A (ko) 2008-01-14
JP3769581B1 (ja) 2006-04-26
CN101175603A (zh) 2008-05-07
MY141334A (en) 2010-04-16
US20130000459A1 (en) 2013-01-03
US20090075568A1 (en) 2009-03-19
JP2006320998A (ja) 2006-11-30
US8517798B2 (en) 2013-08-27
KR101214687B1 (ko) 2012-12-21
CN101175603B (zh) 2014-12-10
WO2006123463A1 (ja) 2006-11-23
TW200640612A (en) 2006-12-01

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