TWI358894B - - Google Patents
Download PDFInfo
- Publication number
- TWI358894B TWI358894B TW094136071A TW94136071A TWI358894B TW I358894 B TWI358894 B TW I358894B TW 094136071 A TW094136071 A TW 094136071A TW 94136071 A TW94136071 A TW 94136071A TW I358894 B TWI358894 B TW I358894B
- Authority
- TW
- Taiwan
- Prior art keywords
- terminal
- diode
- operational amplifier
- bipolar transistor
- inverting input
- Prior art date
Links
- 230000001681 protective effect Effects 0.000 claims description 43
- 239000004065 semiconductor Substances 0.000 description 10
- 230000003321 amplification Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000003199 nucleic acid amplification method Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000009966 trimming Methods 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 101150064138 MAP1 gene Proteins 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000005404 monopole Effects 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
- H03F3/45085—Long tailed pairs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45324—Indexing scheme relating to differential amplifiers the AAC comprising a Darlington transistor circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45352—Indexing scheme relating to differential amplifiers the AAC comprising a combination of a plurality of transistors, e.g. Darlington coupled transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45568—Indexing scheme relating to differential amplifiers the IC comprising one or more diodes as shunt to the input leads
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004300998A JP3874776B2 (ja) | 2004-10-15 | 2004-10-15 | 演算増幅器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200629717A TW200629717A (en) | 2006-08-16 |
| TWI358894B true TWI358894B (https=) | 2012-02-21 |
Family
ID=36148232
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094136071A TW200629717A (en) | 2004-10-15 | 2005-10-14 | Operational amplifier |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7532076B2 (https=) |
| JP (1) | JP3874776B2 (https=) |
| CN (1) | CN100514845C (https=) |
| TW (1) | TW200629717A (https=) |
| WO (1) | WO2006040935A1 (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100992331B1 (ko) | 2008-08-12 | 2010-11-05 | 삼성전기주식회사 | 고주파 변조기용 부스터 증폭회로 및 고주파 변조기 |
| US7812674B2 (en) * | 2008-11-25 | 2010-10-12 | Xilinx, Inc. | Common centroid electrostatic discharge protection for integrated circuit devices |
| US20110089902A1 (en) | 2009-10-21 | 2011-04-21 | K2 Energy Solutions, Inc. | Circuitry for balancing charging of series connected battery cells |
| JP6515666B2 (ja) * | 2015-05-08 | 2019-05-22 | 住友電気工業株式会社 | 増幅回路 |
| CN105024658B (zh) * | 2015-06-10 | 2017-12-15 | 思瑞浦微电子科技（苏州）有限公司 | 一种差分对管的保护电路 |
| GB2580155A (en) * | 2018-12-21 | 2020-07-15 | Comet Ag | Radiofrequency power amplifier |
| US11774561B2 (en) | 2019-02-08 | 2023-10-03 | Luminar Technologies, Inc. | Amplifier input protection circuits |
| US12132452B2 (en) | 2020-06-05 | 2024-10-29 | Analog Devices, Inc. | Apparatus and methods for amplifier input-overvoltage protection with low leakage current |
| CN112230702B (zh) * | 2020-11-03 | 2025-05-27 | 成都明夷电子科技股份有限公司 | 一种SiGe工艺信号放大器尾电流偏置电路 |
| CN116931632B (zh) * | 2022-04-12 | 2026-02-03 | 圣邦微电子（北京）股份有限公司 | 一种高压输入级电路及高压输入方法 |
| CN116931631B (zh) * | 2022-04-12 | 2025-09-09 | 圣邦微电子（北京）股份有限公司 | 一种无偏置电流的高压输入级电路 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4044313A (en) * | 1976-12-01 | 1977-08-23 | Rca Corporation | Protective network for an insulated-gate field-effect (IGFET) differential amplifier |
| US4126830A (en) * | 1977-09-27 | 1978-11-21 | Rca Corporation | Low leakage gate protection circuit |
| DE3342694A1 (de) | 1983-11-25 | 1985-06-05 | Bayer Ag, 5090 Leverkusen | Herstellung sulfonsaeuregruppenhaltiger acrylnitrilpolymerisate und monomere dazu |
| JPS60155213U (ja) * | 1984-03-23 | 1985-10-16 | 株式会社クボタ | 電子回路の入力段トランジスタ保護回路 |
| JPS62291175A (ja) * | 1986-06-11 | 1987-12-17 | Oki Electric Ind Co Ltd | 半導体集積回路装置 |
| JPS6324674A (ja) * | 1986-06-17 | 1988-02-02 | アールシーエー コーポレーシヨン | 集積回路 |
| JPH06237124A (ja) * | 1993-02-08 | 1994-08-23 | Nippon Telegr & Teleph Corp <Ntt> | 差動増幅器の入力保護回路 |
| JPH1174742A (ja) | 1997-08-27 | 1999-03-16 | Denso Corp | オペアンプ |
| US6218900B1 (en) * | 2000-03-29 | 2001-04-17 | Microchip Technology Incorporated | Operational amplifier phase reversal protection |
| JP2002141421A (ja) | 2000-10-31 | 2002-05-17 | Toshiba Corp | 半導体集積回路装置 |
| US6507471B2 (en) * | 2000-12-07 | 2003-01-14 | Koninklijke Philips Electronics N.V. | ESD protection devices |
-
2004
- 2004-10-15 JP JP2004300998A patent/JP3874776B2/ja not_active Expired - Fee Related
-
2005
- 2005-09-29 CN CNB2005800338271A patent/CN100514845C/zh not_active Expired - Fee Related
- 2005-09-29 US US11/665,212 patent/US7532076B2/en not_active Expired - Lifetime
- 2005-09-29 WO PCT/JP2005/017984 patent/WO2006040935A1/ja not_active Ceased
- 2005-10-14 TW TW094136071A patent/TW200629717A/zh not_active IP Right Cessation
-
2009
- 2009-04-01 US US12/416,806 patent/US7692492B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN100514845C (zh) | 2009-07-15 |
| WO2006040935A1 (ja) | 2006-04-20 |
| JP3874776B2 (ja) | 2007-01-31 |
| US20090189693A1 (en) | 2009-07-30 |
| JP2006115255A (ja) | 2006-04-27 |
| CN101036290A (zh) | 2007-09-12 |
| US7532076B2 (en) | 2009-05-12 |
| US7692492B2 (en) | 2010-04-06 |
| TW200629717A (en) | 2006-08-16 |
| US20080012641A1 (en) | 2008-01-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7692492B2 (en) | Operational amplifier | |
| TW478134B (en) | Bi-directional ESD diode structure | |
| US6400204B1 (en) | Input stage ESD protection for an integrated circuit | |
| TW477055B (en) | Improved ESD diode structure | |
| JPH0372666A (ja) | 半導体集積回路装置 | |
| KR19980036986A (ko) | 정전기 보호회로 | |
| CN109768040B (zh) | 调节器用半导体集成电路 | |
| KR20040012608A (ko) | 입력보호회로 | |
| US6529059B1 (en) | Output stage ESD protection for an integrated circuit | |
| JP2838836B2 (ja) | 半導体集積回路及び半導体集積回路装置 | |
| KR101536104B1 (ko) | 비-복사 전류를 제한하기 위한 방법 및 회로 | |
| US9722419B2 (en) | Electrostatic discharge protection | |
| US6680512B2 (en) | Semiconductor device having an integral protection circuit | |
| US7746611B2 (en) | ESD protective circuit having low leakage current | |
| KR20070065271A (ko) | 반도체 장치 | |
| JP4099343B2 (ja) | 半導体装置 | |
| JP2006210926A (ja) | Ｅｓｄ保護回路を備える半導体素子 | |
| JPH02135774A (ja) | 半導体装置 | |
| JP2009260453A (ja) | 電力増幅器 | |
| CN113964116A (zh) | 静电放电保护半导体结构及其制造方法 | |
| JPS59138354A (ja) | 集積回路 | |
| JPS62256464A (ja) | 保護素子 | |
| JPH0590500A (ja) | 保護ダイオードおよび半導体装置 | |
| JPH0120545B2 (https=) | ||
| HK1152159B (en) | Method for limiting an un-mirrored current and circuit therefor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |