TWI358768B - - Google Patents

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Publication number
TWI358768B
TWI358768B TW096142478A TW96142478A TWI358768B TW I358768 B TWI358768 B TW I358768B TW 096142478 A TW096142478 A TW 096142478A TW 96142478 A TW96142478 A TW 96142478A TW I358768 B TWI358768 B TW I358768B
Authority
TW
Taiwan
Prior art keywords
gas
storage chamber
gas analysis
substrate
processing
Prior art date
Application number
TW096142478A
Other languages
English (en)
Chinese (zh)
Other versions
TW200839869A (en
Inventor
Hideki Tanaka
Susumu Saito
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200839869A publication Critical patent/TW200839869A/zh
Application granted granted Critical
Publication of TWI358768B publication Critical patent/TWI358768B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
TW096142478A 2006-11-10 2007-11-09 Substrate processing apparatus and analysis method therefor TW200839869A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006305844A JP5016294B2 (ja) 2006-11-10 2006-11-10 基板処理装置及び該装置の分析方法

Publications (2)

Publication Number Publication Date
TW200839869A TW200839869A (en) 2008-10-01
TWI358768B true TWI358768B (ja) 2012-02-21

Family

ID=39405199

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096142478A TW200839869A (en) 2006-11-10 2007-11-09 Substrate processing apparatus and analysis method therefor

Country Status (4)

Country Link
JP (1) JP5016294B2 (ja)
KR (1) KR100938012B1 (ja)
CN (1) CN100543932C (ja)
TW (1) TW200839869A (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5338467B2 (ja) * 2009-05-11 2013-11-13 コニカミノルタ株式会社 プラズマ測定装置
KR101169764B1 (ko) 2010-10-15 2012-07-30 (주)쎄미시스코 공정챔버의 실시간 모니터링 시스템
CN105405735B (zh) * 2014-08-22 2017-07-25 中微半导体设备(上海)有限公司 等离子体处理装置及等离子体处理工艺的监测方法
KR101969275B1 (ko) * 2016-06-30 2019-04-15 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체
CN115931631A (zh) * 2018-06-13 2023-04-07 西默有限公司 气体监测系统
US11036202B2 (en) * 2018-12-13 2021-06-15 Lam Research Corporation Real-time health monitoring of semiconductor manufacturing equipment

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6353927A (ja) * 1986-08-25 1988-03-08 Hitachi Ltd プラズマプロセス装置
JPH02170981A (ja) * 1988-12-21 1990-07-02 Fujitsu Ltd Ｃｖｄ装置
JPH11265878A (ja) * 1998-01-27 1999-09-28 Internatl Business Mach Corp <Ibm> 残留ガス分析により終点検出を提供する方法及び装置
JP4387573B2 (ja) * 1999-10-26 2009-12-16 東京エレクトロン株式会社 プロセス排気ガスモニタ装置及び方法、半導体製造装置、及び半導体製造装置管理システム及び方法
JP2001250812A (ja) 2000-03-08 2001-09-14 Sony Corp プラズマ処理の終点検出方法及び終点検出装置
JP2001338967A (ja) * 2000-05-29 2001-12-07 Hitachi Kokusai Electric Inc 基板処理装置
JP3634734B2 (ja) * 2000-09-22 2005-03-30 株式会社日立製作所 プラズマ処理装置および処理方法
JP2002151467A (ja) * 2000-11-15 2002-05-24 Nec Corp 排ガス再利用装置及び排ガス再利用方法
US6791692B2 (en) * 2000-11-29 2004-09-14 Lightwind Corporation Method and device utilizing plasma source for real-time gas sampling
JP2003179035A (ja) * 2001-12-13 2003-06-27 Ulvac Japan Ltd プラズマ応用機器におけるエンドポイント検出方法
JP2004039952A (ja) * 2002-07-05 2004-02-05 Tokyo Electron Ltd プラズマ処理装置の監視方法およびプラズマ処理装置
JP4385086B2 (ja) * 2003-03-14 2009-12-16 パナソニック株式会社 Ｃｖｄ装置のクリーニング装置およびｃｖｄ装置のクリーニング方法

Also Published As

Publication number Publication date
TW200839869A (en) 2008-10-01
KR20080042717A (ko) 2008-05-15
JP5016294B2 (ja) 2012-09-05
CN100543932C (zh) 2009-09-23
KR100938012B1 (ko) 2010-01-21
JP2008124216A (ja) 2008-05-29
CN101179008A (zh) 2008-05-14

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