TWI354598B - - Google Patents
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- Publication number
- TWI354598B TWI354598B TW097112893A TW97112893A TWI354598B TW I354598 B TWI354598 B TW I354598B TW 097112893 A TW097112893 A TW 097112893A TW 97112893 A TW97112893 A TW 97112893A TW I354598 B TWI354598 B TW I354598B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- polishing
- film
- peripheral portion
- processing method
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 186
- 238000005498 polishing Methods 0.000 claims description 167
- 239000006061 abrasive grain Substances 0.000 claims description 89
- 230000002093 peripheral effect Effects 0.000 claims description 74
- 239000010432 diamond Substances 0.000 claims description 49
- 229910003460 diamond Inorganic materials 0.000 claims description 48
- 239000002245 particle Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 31
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 24
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 24
- 238000003672 processing method Methods 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 230000000694 effects Effects 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000007788 liquid Substances 0.000 claims description 15
- 239000004575 stone Substances 0.000 claims description 10
- 230000002925 chemical effect Effects 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 6
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 4
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 238000005553 drilling Methods 0.000 claims 1
- 235000021189 garnishes Nutrition 0.000 claims 1
- 229910052747 lanthanoid Inorganic materials 0.000 claims 1
- 150000002602 lanthanoids Chemical class 0.000 claims 1
- 239000002002 slurry Substances 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 18
- 229910052707 ruthenium Inorganic materials 0.000 description 18
- 230000003746 surface roughness Effects 0.000 description 13
- 239000000463 material Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910052684 Cerium Inorganic materials 0.000 description 4
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000004745 nonwoven fabric Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- HGUFODBRKLSHSI-UHFFFAOYSA-N 2,3,7,8-tetrachloro-dibenzo-p-dioxin Chemical compound O1C2=CC(Cl)=C(Cl)C=C2OC2=C1C=C(Cl)C(Cl)=C2 HGUFODBRKLSHSI-UHFFFAOYSA-N 0.000 description 1
- 241000251468 Actinopterygii Species 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- 229920002873 Polyethylenimine Polymers 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- 241000239226 Scorpiones Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- NLMBNVBBHYNBQY-UHFFFAOYSA-N [C].[Ru] Chemical compound [C].[Ru] NLMBNVBBHYNBQY-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
- B24B21/002—Machines or devices using grinding or polishing belts; Accessories therefor for grinding edges or bevels
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007104068A JP4374038B2 (ja) | 2007-04-11 | 2007-04-11 | 基板処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200906541A TW200906541A (en) | 2009-02-16 |
| TWI354598B true TWI354598B (enExample) | 2011-12-21 |
Family
ID=39854147
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097112893A TW200906541A (en) | 2007-04-11 | 2008-04-09 | Substrate processing method |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20080254719A1 (enExample) |
| JP (1) | JP4374038B2 (enExample) |
| TW (1) | TW200906541A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5254575B2 (ja) * | 2007-07-11 | 2013-08-07 | 株式会社東芝 | 研磨装置および研磨方法 |
| JP2010162624A (ja) * | 2009-01-13 | 2010-07-29 | Ebara Corp | 研磨装置および研磨方法 |
| JP5571409B2 (ja) | 2010-02-22 | 2014-08-13 | 株式会社荏原製作所 | 半導体装置の製造方法 |
| JP2011177842A (ja) | 2010-03-02 | 2011-09-15 | Ebara Corp | 研磨装置及び研磨方法 |
| DE102010042040A1 (de) | 2010-10-06 | 2012-04-12 | Siltronic Ag | Verfahren zum Schleifen einer Halbleiterscheibe |
| JP6244962B2 (ja) | 2014-02-17 | 2017-12-13 | 株式会社Sumco | 半導体ウェーハの製造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5534106A (en) * | 1994-07-26 | 1996-07-09 | Kabushiki Kaisha Toshiba | Apparatus for processing semiconductor wafers |
| US6602439B1 (en) * | 1997-02-24 | 2003-08-05 | Superior Micropowders, Llc | Chemical-mechanical planarization slurries and powders and methods for using same |
| JP4113282B2 (ja) * | 1998-05-07 | 2008-07-09 | スピードファム株式会社 | 研磨組成物及びそれを用いたエッジポリッシング方法 |
| DE19842709A1 (de) * | 1998-09-17 | 2000-03-30 | Siemens Ag | Polierflüssigkeit zum Polieren von Bauelementen, vorzugsweise Wafern, insbesondere zum Chemisch-Mechanischen Polieren derartiger Bauelemente |
| JP3141939B2 (ja) * | 1998-11-26 | 2001-03-07 | 日本電気株式会社 | 金属配線形成方法 |
| US6267649B1 (en) * | 1999-08-23 | 2001-07-31 | Industrial Technology Research Institute | Edge and bevel CMP of copper wafer |
| JP4090247B2 (ja) * | 2002-02-12 | 2008-05-28 | 株式会社荏原製作所 | 基板処理装置 |
| JP2007012943A (ja) * | 2005-06-30 | 2007-01-18 | Toshiba Corp | 基板処理方法 |
-
2007
- 2007-04-11 JP JP2007104068A patent/JP4374038B2/ja not_active Expired - Fee Related
-
2008
- 2008-04-09 TW TW097112893A patent/TW200906541A/zh not_active IP Right Cessation
- 2008-04-10 US US12/100,450 patent/US20080254719A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US20080254719A1 (en) | 2008-10-16 |
| TW200906541A (en) | 2009-02-16 |
| JP2008263027A (ja) | 2008-10-30 |
| JP4374038B2 (ja) | 2009-12-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |