200906541 九、發明說明： 【發明所屬之技術領域】 本發明係關於研磨半導體基板之周緣部的基板處理方 法，尤其係關於為去除形成於基板之周緣部的無用膜或凹 凸面等的基板處理方法。 本申請案係基於2007年4月u曰申請之曰本特願2〇〇7_ 104068號並主張其優先權，其全文倂入本文供參考。 【先前技術】 近年來，隨著配線之細微化，應管理粒子及雜質濃度之 值亦日益嚴格。不用說半導體基板之表面，周緣部（凹口 部及斜面部）之管理亦愈加重要。 半導體裝置之製造過程中，一邊將Si〇2膜、SiN膜等絕 緣膜與多Sim、W膜、（：谓等導電膜反覆進行成膜·露光 蝕刻加工等，一邊形成細微配線。該製造過程中，隨絕緣 膜或導電膜成膜，亦於基板周緣部形成含有絕緣臈或導電 膜之無用膜及凹凸面。該等無用臈或凹凸面於製造過程中 成為粒子發生源，作為隨配線之細微化使成品率低下之主 要原因愈加表面化。 例如，溝式電容器之溝（Deep Trench)之形成過程中，於 用CVD法使SiN膜與Si〇2膜依次成膜之積層絕緣膜之上形 成抗蝕圖形。其後，藉由將該抗蝕圖形作為遮罩根據 RIE(反應性離子蝕刻，Reactive I〇n Etching)依次蝕刻8丨〇2 膜、SiN膜及矽基板，藉此形成溝。此時，於基板周緣 部’等離子體之生成或蝕刻氣體之供給將變得不安定，有 130431.doc 200906541 1:=針狀突起。該針狀突起於基板之搬送時或加工時 導二置為產生粒子的原因。由於該等粒子與所製造之半 柄…t成品率的降低相關聯’故有必要去除形成於基 板周緣部之針狀突起。[Technical Field] The present invention relates to a substrate processing method for polishing a peripheral portion of a semiconductor substrate, and more particularly to a substrate processing method for removing an unnecessary film or a concave-convex surface or the like formed on a peripheral portion of the substrate. . The present application is based on and claims the priority of Japanese Patent Application No. PCT Application No. No. No. No. No. [Prior Art] In recent years, with the miniaturization of wiring, the value of the concentration of particles and impurities to be managed has become increasingly strict. Needless to say, the surface of the semiconductor substrate and the management of the peripheral portion (notch portion and bevel portion) are becoming more and more important. In the manufacturing process of the semiconductor device, fine wiring is formed while an insulating film such as a Si〇2 film or a SiN film is formed by performing a film formation, a photolithography process, or the like on a plurality of Sim, W film, or the like. In the film formation of the insulating film or the conductive film, an unnecessary film or a concave-convex surface containing an insulating or conductive film is formed on the peripheral portion of the substrate. These useless or uneven surfaces become a source of particles in the manufacturing process as wiring. The reason for the miniaturization is to increase the surface area. For example, in the formation of a trench capacitor (Deep Trench), a Si oxide film and a Si 2 film are sequentially formed on a laminated insulating film by a CVD method. The resist pattern is formed by sequentially etching the 8 丨〇 2 film, the SiN film, and the ruthenium substrate by RIE (Reactive Ion Etching) using the resist pattern as a mask. At this time, the generation of the plasma or the supply of the etching gas in the peripheral portion of the substrate becomes unstable, and there is a 130431.doc 200906541 1:= needle-like protrusion. The needle-like protrusion is guided during the transfer or processing of the substrate. In order to generate particles, since these particles are associated with a decrease in the yield of the manufactured half handle ... t, it is necessary to remove the needle-like projections formed on the peripheral portion of the substrate.
作為處理基板周緣部之方法，有藉由按壓具有被研磨面 之基板與研磨面之同時使之滑動，而研磨去除基板上之被 研磨膜的研磨技術°該研磨技術有游離磨粒方式與固定磨 方式#離磨粒方式，係向不織布構成之研磨面與被研 磨面之接觸面供給含有研磨粒子的研磨劑，並同時研磨被 研磨面。固定磨粒方式’係向固定有磨粒之研磨面與被研 磨面之接觸面供給純水’並同時研磨被研磨面。 過去，用固定磨粒方式研磨去除溝形成時產生之針狀突 起之情形，係用研磨速度較高之鑽石磨粒#4000(粒子直徑 3 μΐΏ左右）完全研磨去除矽基板上之SiN膜及針狀突起。其 後，用鑽石磨粒#10000(粒子直徑〇5 μιη左右）實施精研 磨。然而，根據該方法，雖研磨時間短，但鑽石磨粒 #4000帶給矽基板之損傷較大，鑽石磨粒# 1⑽⑼之精研磨 後亦殘存有損傷（例如，參見特開2003-234314號公報）。 作為對该情形之處理，有亦於SiN臈之研磨去除使用鑽 石磨粒#10000之方法。然而，該方法，欲研磨去除高硬度 膜之SiN膜需要大量時間。其他處理之方法，有一邊將鑽 石磨粒按#4000、#8000、#1〇〇〇〇之順序，逐漸減小其磨粒 大小，一邊改善修整面粗糙度的方法。然而，該方法，由 於需使用3種研磨帶，故需要3個研磨頭，使裝置大型化。 130431.doc 200906541 且由於矽基板之研磨量亦增大，若於主 ^ ^ % - ^ 右於+導體裝置之製造 過％進仃複數回之研磨處理，將 菊#，# "原本之基板的形狀 規格，有可能使生產線不能夠正常運行。 生要ΓΓ磨面之面粗趟度對抑制其後之缺陷的發 較為有Γ,高被研磨面之面粗趟度，減小磨粒大小 季乂為有效。然而，研磨去险 膜時，若…， 或i02膜之類的高硬度 η 力惡化之副作用。 W磨速度將顯者降低，有生產 提磨面之面粗糙度惡化而提高研磨去除效率， '案有研磨中之藥液添加(例如，參 公報）。該提案提出，為提高石夕基板 943號 /签极上之SiN臈之去除效 :、’添加有聚乙烯亞胺或四甲銨氫氧化物。然而，該方 ::Γ基板表面亦暴露於相同的藥液，故有”基板 造成蝕刻之副作用。 【發明内容】 之一形態之為一種研磨基板周緣部的基板處理方 法^括：於半導體基板之周緣部與以以有磨粒之第i 研磨面接觸之狀態下’藉由滑動上述基板與上述第！研磨 ==上述基板之周緣部’其中該磨粒係以對於氧化矽 糸或亂化石夕系之膜具有化學效果之粒子作為主成分.於上 =基2周緣部與固定有磨粒之第2研磨面接觸之狀態 下，藉由滑動上述基板與上述第2研磨面而研磨上述基板 之周緣部，其中該磨粒係含有以機械效果為主體之磨粒。 本發明之另一形態為一種研磨基板周緣部的基板處理方 I30431.doc 200906541 使用含有料氧化㈣或氮切系之膜具有化 果之粒子作為主成分之磨粒之第1研磨液，研磨半導 體基板之周緣部；使用含有以 機械效果為主體之磨粒之第 2研磨液’研磨上述半導體基板之周緣部。As a method of processing the peripheral portion of the substrate, there is a polishing technique for polishing and removing the film to be polished on the substrate by pressing the substrate having the surface to be polished and the polishing surface. The polishing technique has a free abrasive pattern and a fixed method. In the grinding method, the abrasive containing the abrasive particles is supplied to the contact surface of the polishing surface composed of the non-woven fabric and the surface to be polished, and the surface to be polished is simultaneously polished. The fixed abrasive method "sends pure water" to the contact surface of the abrasive surface to which the abrasive grains are fixed and the surface to be grounded, and simultaneously grinds the surface to be polished. In the past, the acicular protrusions generated during the formation of the grooves were removed by a fixed abrasive method, and the SiN film and the needle on the ruthenium substrate were completely polished by using a diamond abrasive grain #4000 (having a particle diameter of about 3 μΐΏ). Protrusion. Thereafter, the grinding abrasive was carried out using diamond abrasive grains #10000 (particle diameter 〇 5 μιη or so). However, according to this method, although the grinding time is short, the damage caused by the diamond abrasive grain #4000 to the ruthenium substrate is large, and the diamond abrasive grain #1(10)(9) is also damaged after the fine grinding (for example, see JP-A-2003-234314 ). As a treatment for this case, there is a method of removing and using the diamond abrasive grain #10000 in the polishing of SiN. However, this method requires a large amount of time to polish the SiN film of the high hardness film. For other treatment methods, there is a method of gradually reducing the size of the abrasive grains by reducing the size of the abrasive grains in the order of #4000, #8000, #1〇〇〇〇, while improving the roughness of the finished surface. However, in this method, since three types of polishing tapes are required, three polishing heads are required to increase the size of the apparatus. 130431.doc 200906541 And because the grinding amount of the ruthenium substrate is also increased, if the main ^ ^ % - ^ is right to the + conductor device, the manufacturing process is more than the grinding process, the original substrate of the daisy #,# " The shape specifications may make the production line not function properly. The roughness of the surface to be honed is more conducive to the suppression of the defects behind it. The surface of the surface to be polished is rough and the size of the abrasive grains is reduced. However, when grinding the film, the side of the high hardness η force such as ..., or i02 film deteriorates. The W-grinding speed is remarkably lowered, and the surface roughness of the surface to be polished is deteriorated to improve the polishing removal efficiency. 'The case has a chemical solution added during grinding (for example, the publication). The proposal proposes to improve the removal efficiency of SiN臈 on No. 943/signature of Shixi substrate: 'Addition of polyethyleneimine or tetramethylammonium hydroxide. However, the party: the surface of the substrate is also exposed to the same chemical liquid, so there is a side effect of the substrate caused by etching. [Invention] One aspect of the substrate is a substrate processing method for polishing the peripheral portion of the substrate: The peripheral portion is in contact with the i-th polishing surface having abrasive grains by 'sliding the substrate and the above-mentioned first polishing == the peripheral portion of the substrate', wherein the abrasive grains are used for cerium oxide or chaotic fossils The film of the ceremonial film has a chemical effect as a main component. The substrate is polished by sliding the substrate and the second polishing surface while the upper edge portion of the upper substrate 2 is in contact with the second polishing surface to which the abrasive grains are fixed. In the peripheral portion, the abrasive grain contains abrasive grains mainly composed of mechanical effects. Another aspect of the present invention is a substrate processing method for polishing the peripheral edge portion of the substrate. I30431.doc 200906541 Using a film containing a material oxide (tetra) or a nitrogen system The first polishing liquid having the particles of the fruit as the main component, the peripheral portion of the semiconductor substrate is polished, and the second polishing liquid containing the abrasive grains mainly composed of mechanical effects is used. The peripheral edge portion of said semiconductor substrate.
本發明之另一形態係-種研磨基板周緣部的基板處理方 包括：使用含有對於氧切系或氮切系之膜具有化 學效果之粒子為主成分之磨粒之研隸，或❹定有該磨 粒之研磨面與半導體基板之周緣部接觸，而研磨上述基板 之周緣部；使用含有以機械效果為主體之磨粒之研磨液， 或使固定有該磨粒之研磨面與上述半導體基板之周緣部接 觸’而研磨上述基板之周緣部。 【實施方式】 以下，兹佐參照圖式詳細說明本發明之實施形態。 (第1實施形態） 圖1A 1Β係本發明之第i實施形態之基板處理步驟的剖 面圖。圖1A表示被處理基板之研磨前的狀態，圖1B表示 被處理基板之研磨後的狀態'。圖中之1〇係矽基板，"係 Si〇2膜 ’ 12係 SiN膜。 本實施形態中，對於訊所示之構造，於矽基板1〇之周 緣部，與固定有對於SiQ2&SiN具有化學效果之二氧化飾 (氧化鈽）粒子為主成分之磨粒之第丨研磨面接觸。之後，於 。亥狀態下藉由旋轉基板丨〇，而研磨基板周緣部。其次，於 砍基板1G之周緣部，使固定有以機械效果為主體之鑽石磨 粒之第2研磨面接觸。之後，於該狀態下藉由旋轉基板 130431.doc 200906541 ι〇，而研磨基板周緣部。藉此，如圖1B所示，於基板〗〇之 周緣部去除Si〇2膜11或SiN膜12之同時，使基板周緣部之 表面粗糙度變得極小。 以下，具體說明本實施形態。 圖2係本實施形態中使用之固定磨粒方式之研磨裝置的 概略構成圖。 載置有被處理基板20之台21，可藉由發動機22旋轉。基 板20，其中心與台21之中心對準並被吸著固定於台2 1，基 板20之周緣部的一部分與研磨帶23接觸。研磨帶^，被接 續於無圖示之圓筒之研磨頭24按壓於基板側。且，在藉由 研磨頭24將研磨帶23按壓於基板2〇之周緣部之狀態下，藉 由發動機22使基板20旋轉，便可研磨基板2〇之周緣部。 即，可以將於基板20之周緣部成膜之無用膜的一部分或全 邛研磨去除直至基板1〇之表面露出。又，研磨時，自基板 中〜近旁之噴嘴25向基板表面供給純水，該純水供給於基 板周緣部之研磨區域。 作為研磨帶23，使用了如圖3A、3B所示之第1研磨帶 23a與第2研磨帶2313之2種，第i研磨帶23&固定有以具有化 子效果之粒子為主成分之磨粒；第2研磨帶23b固定有以機 械效果為主體之磨粒。第！研磨帶23a，如圖3A所示，係於 PET(聚對苯二曱酸乙二醇酯）膜31上藉由粘合劑32粘著固 定有二氧化鈽磨粒33(#1000():粒子直徑〇 5 μπι左右）者。 第1研磨帶23a之帶寬為80 mm，厚為5〇 μπι。第2研磨帶 23b，如圖3Β所示，係於PET膜31上藉由粘合劑32粘著固 130431.doc -10- 200906541 定有鑽石磨粒34(#l〇〇〇〇 ··粒子直徑05 μΓη左右）者。第2研 磨帶23b之帶寬及厚與研磨帶23a相同。該等2種研磨帶 23，根據需要可以交換。再者，該等研磨帶23，藉由研磨 時少許纏繞，可將因研磨而劣化之部分置換為新的研磨 面。 如上述圖1A所示，於矽基板1〇之表面全體，藉由cvd& 依次使厚loo nm之以匕膜丨丨與厚1〇〇 11111之3以臈12成膜。 以下說明使用之本實施形態的研磨方法去除成膜於該基板 1 〇之周緣部的積層絕緣膜的結果。 使用上述圖2所示之研磨裝置，設置粘著固定有圖3八所 示之二氧化鈽磨粒之第i研磨帶23a作為研磨帶23。將被處 理基板2G吸著於台21，以—定速度使台21旋轉。與此同 夺藉由邊以一疋速度送出研磨帶23，一邊使研磨帶23 按壓於基板周緣部，進行基板周緣部之研磨。 相對過去技術之鑽石磨粒#4〇〇〇與鑽石磨粒#1〇〇〇〇之組 -研磨時間雖增長至2倍，但研磨後之表面粗糖度降低 至1 /5且，與僅藉由相同粒子直徑之鑽石磨粒#〗〇〇〇〇進 行研磨去除比較，研磨時間縮短至1/1〇,研磨後之表面粗 趟度降低至約1 /2。 另方面，右將對於矽基板10之研磨能力，從研磨前後 之基板重里變化比較，比鑽石磨粒#4〇〇〇低，又比鑽 磨粒#10000低1/5。此等說明，二氧化飾磨粒對於膜 或SlN膜12，有效地發揮化學作用。且，亦說明對於Si 不起化學作用，而依存於磨粒自身之機械強度。 130431.doc 200906541 研磨基板周緣部時，由於被研磨面於♦基板1G之剖面方 向及圓周方向有曲率，故以使研磨頭24沿碎基板W之曲率 而-邊轉動接觸面-邊進行研磨。此時，為不產生研磨殘 留有必要過量研磨。該過量研磨，有利地發揮了對叫或 SiN之研磨能力高、對si研磨能力低之二氧化鈽磨粒的特 徵。即，二氧化鈽磨粒對堆積於矽基板1〇之周緣部之無用 膜（Si〇2膜、SiN膜）的研磨去除極其有效。 如此藉由使用固定粘著有二氧化筛磨粒之第1研磨帶 23a，相對過去技術之鑽石磨粒#4〇〇〇與鑽石磨粒之 組合，研磨後之表面粗糙度充分降低，而研磨時間增長。 因此，以由上述結果以縮短研磨時間為目的，對將固定粘 著有二氧化鈽磨粒（# 10000)之研磨帶23a與固定粘著有鑽石 磨粒（#10000)之研磨帶23b組合之實施形態進行說明。 最初，用固定粘著有二氧化鈽磨粒之第i研磨帶23a開始 積層絕緣膜之研磨去除，並持續研磨直至底層之Si之一部 分露出。其次，變更為利用固定粘著有比二氧化鈽磨粒對 矽基板有更高研磨能力的鑽石磨粒之第2研磨帶23b加以研 磨。由此，總計之研磨時間比僅用二氧化鈽磨粒之情形改 善至約1/2。即，與過去技術之鑽石磨粒#4〇〇〇與鑽石磨粒 #10000之組合的時間相同。且，此時之研磨後的表面粗糙 度’相對過去技術之鑽石磨粒#4000與鑽石磨粒#1〇〇〇〇之 組合，約降低至1/3。 另，將用二氧化鈽磨粒之第i研磨帶23a之研磨階段，與 用鑽石磨粒之第2研磨帶2几之研磨階段分開之情形，若利 130431 .doc 12 200906541 用保持.旋轉研磨對象基板之發動機之旋轉負荷的變化， 切換研磨階段，將較有效率。 又’代替先藉由第1研磨帶233之研磨修整後再藉由第2 研磨帶23b之研磨’而將藉由第！研磨帶23a之研磨與藉由 第2研磨帶23b之研磨重複互換，亦可獲得大致與上述相同 的效果。 又，如圖4所示，於被處理基板2〇之周緣部的不同處， 與固定粘著有二氧化鈽磨粒之第丨研磨帶23a、與固定粘著 有鑽石磨粒之第2研磨帶23b同時接觸，令二氧化鈽磨粒盘 鑽石磨粒之研磨並行。該情形，研磨時間比僅有二氧化錦 磨粒之情形改善至約1/3。，相對過去技術之鑽石磨粒 料咖與鐵石磨粒㈣_之組合，研磨時間縮短至2/3 ,研 磨後之表面粗糙度降低至約1/：3。 1, —果顯示’藉由對於高硬度之叫媒U與SiN膜12所 效率之二氧化飾磨粒的研磨，與底㈣基板 h路出後猎由·磨粒时研磨，以效率提 乘效果，使得積層、絕緣膜之去除效率提冑。 〇 :此，本實施形態，對於於梦基板二表面形 S叫臈U及SiN膜12等之高硬度臈之 板’可用固定粘著有二氧化鈽磨、？處；基 找葚古魏 ^ 之弟1研磨帶23 a與固定 拈者有鑽石磨粒之第2研磨帶23b 疋 率去除無用膜，又可提高研磨面精:=°藉此，可高效 高與缺陷降低而可提高成品率。 由生產性之提 即’藉由將使用具有化學效果之磨粒的研磨與使用具有 130431.doc 13- 200906541 機械效果之磨粒的研磨並用，可以高效率地去除含有氧化 夕系或氮化石夕系之尚硬度膜的無用膜或凹凸面，並且可使 研磨面精度提高。 另，代替Si〇2膜11與8丨1^膜12之積層膜，藉由cVD法於 矽基板10上成膜厚200 nmiSi〇2膜，為去除此時之基板周 緣部之膜使用上述圖4所示之研磨裝置利用本實施形態。 其結果，相對過去之鑽石#4〇〇〇及#1〇〇〇〇之組合，二氧化 鈽磨粒#10000與鑽石磨粒#10000之組合，研磨時間約縮短 至1 /2 ’表面粗糙度改善至丨/3。 同樣地，藉由CVD法於矽基板1〇上成膜厚2〇〇 nm之siN 膜，為去除此時之基板周緣部之膜使用上述圖4所示之研 磨裝置利用本實施形態。其結果，相對過去之鑽石#4〇〇〇 及#10000之組合，二氧化鈽磨粒#10000與鑽石磨粒#1〇〇〇〇 之組合’研磨時間約縮短至3/4，表面粗縫度改善至丨/3。 (第2實施形態） 圖5A〜5C係本發明之第2實施形態之基板處理步驟的剖 面圖。圖5A表示溝形成之狀態，圖5B表示被處理基板之 研磨前的狀態，圖5C表示被處理基板之研磨後的狀態。圖 中之10係矽基板，丨丨係以仏膜，12係8以膜，13係矽之針 狀突起。 如圖5A所示，藉由LP-CVD法，使SiN膜12及Si〇—U依 次堆積於矽基板10之表面，將此圖案化並形成由以^膜12 及Si〇2膜11之積層膜構成之硬遮罩。其後’用該硬遮罩藉 由RIE法將矽基板1〇蝕刻，形成溝。此時，基板周緣部產 130431.doc -14- 200906541 生蝕刻混亂，形成遮罩之殘渣或si之針狀突起i3。其後， 藉由濕法蝕刻剝離8丨〇2臈11。 將SKD2膜11剝離之狀態示於圖5B，於石夕基板ι〇之周緣部 產生SiN膜12與梦針狀突起13。含有於該等溝形成時產生 之SiN膜12之矽針狀突起13的去除及基板平坦化係適用本 實施形態之研磨方法。 本實把形態’亦適用將固著有二氧化鈽磨粒㈣刪 之研磨帶23a與固定枯著有鑽石磨粒#i 〇_之研磨帶现組 合之研磨方法。使用上述圖4所示之研磨裝置，於一定研 磨條件下實施研磨，修整如圖5C所示之被研磨基板的剖面 圖。 在此，僅用二氧化鈽磨粒之研磨帶23缚試_臈12與矽 針狀犬起13之去除及基板丨〇之平坦化後，相對過去技術之 鑽石磨粒#4000與鑽石磨粒#1〇〇〇〇之組合，即使研磨時間 增長至2倍，φ無法完成料狀突起13之去除。此係由於 s_12之錄㈣進展，但料狀㈣13〇除及基板 平坦化之進行變緩慢之故。 另方面，若使用將二氧化鈽磨粒之第1研磨帶23a與鑽 石磨粒之第2研磨帶23b組合之研磨方法，相對過去技術， 研磨時間縮短至2/3’於過去技術所觀察到之由鑽石磨粒 #4000造成之研磨損傷消失，表面粗糙度亦改善至1/3。 即®有必要進盯氧化石夕系或氮化石夕系之無用勝之去除與 基板之平坦化時，二氧化鈽磨粒之第丨研磨帶與鑽石磨 粒之第2研磨帶23b之組合，顯示更加有效。 /、 130431.doc 200906541 如此根據本實施形態，對於於矽基 sm膜12切針狀突起13等之被處理基板，藉由用^ 者有二氧化鈽磨粒之第1研磨帶23a與固定枯著有鑽石磨教 之第2研磨帶23b進行研磨，可將基板周緣部之無用膜〃 狀突起13高效率地去除，並可提高研磨面精度。故^針 付與第1實施形態相同之效果。 乂 (第3實施形態） ΟAccording to still another aspect of the present invention, the substrate processing method for polishing the peripheral portion of the substrate includes: using a grinding particle containing a chemical component having a chemical effect on a film of an oxygen-cut or a nitrogen-cut system as a main component, or The polishing surface of the abrasive grain is in contact with the peripheral edge portion of the semiconductor substrate to polish the peripheral portion of the substrate; the polishing liquid containing abrasive grains mainly composed of mechanical effects, or the polishing surface to which the abrasive grains are fixed and the semiconductor substrate are used The peripheral portion contacts 'and grinds the peripheral portion of the substrate. [Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. (First Embodiment) Fig. 1A is a cross-sectional view showing a substrate processing step in an i-th embodiment of the present invention. Fig. 1A shows a state before polishing of a substrate to be processed, and Fig. 1B shows a state after polishing of a substrate to be processed. In the figure, the system is a substrate, and the system is a Si 2 film, a 12-series SiN film. In the present embodiment, in the structure shown by the first embodiment, the second portion of the ruthenium substrate 1 is bonded to the second surface of the ruthenium oxide (ruthenium oxide) particles having a chemical effect on SiQ2 & SiN. Face contact. After that, Yu. In the sea state, the peripheral portion of the substrate is polished by rotating the substrate. Next, the second polishing surface to which the diamond abrasive having the mechanical effect is fixed is brought into contact with the peripheral portion of the substrate 1G. Thereafter, in this state, the peripheral portion of the substrate is polished by rotating the substrate 130431.doc 200906541. As a result, as shown in Fig. 1B, the Si〇2 film 11 or the SiN film 12 is removed at the peripheral portion of the substrate, and the surface roughness of the peripheral portion of the substrate is extremely small. Hereinafter, the present embodiment will be specifically described. Fig. 2 is a schematic configuration diagram of a polishing apparatus of a fixed abrasive type used in the embodiment. The stage 21 on which the substrate 20 to be processed is placed can be rotated by the engine 22. The substrate 20 has a center aligned with the center of the table 21 and is affixed to the table 2, and a portion of the peripheral portion of the substrate 20 is in contact with the polishing tape 23. The polishing tape is pressed against the substrate side by a polishing head 24 that is continuous with a cylinder (not shown). In the state in which the polishing tape 23 is pressed against the peripheral edge portion of the substrate 2 by the polishing head 24, the substrate 20 is rotated by the engine 22, whereby the peripheral portion of the substrate 2 is polished. That is, a part or all of the unnecessary film formed on the peripheral portion of the substrate 20 can be polished and removed until the surface of the substrate 1 is exposed. Further, at the time of polishing, pure water is supplied from the nozzles 25 to the vicinity of the substrate to the surface of the substrate, and the pure water is supplied to the polishing region of the peripheral portion of the substrate. As the polishing tape 23, two types of the first polishing tape 23a and the second polishing tape 2313 shown in Figs. 3A and 3B are used, and the i-th polishing tape 23& is fixed with a particle having a chemical effect as a main component. The second polishing tape 23b is fixed with abrasive grains mainly composed of mechanical effects. The first! The polishing tape 23a, as shown in FIG. 3A, is attached to the PET (polyethylene terephthalate) film 31 by adhesion of cerium oxide abrasive grains 33 by means of an adhesive 32 (#1000(): Those whose particle diameter is 〇5 μπι or so). The first polishing tape 23a has a bandwidth of 80 mm and a thickness of 5 〇 μπι. The second polishing tape 23b, as shown in FIG. 3A, is adhered to the PET film 31 by the adhesive 32. 130431.doc -10- 200906541 is provided with diamond abrasive grains 34 (#l〇〇〇〇·· particles) Those with a diameter of around 05 μΓη). The bandwidth and thickness of the second grinding belt 23b are the same as those of the polishing belt 23a. These two types of polishing tapes 23 can be exchanged as needed. Further, the polishing tapes 23 can be replaced with a new polishing surface by a portion which is deteriorated by polishing by a slight entanglement during polishing. As shown in FIG. 1A above, the entire surface of the tantalum substrate 1 is formed into a film of 臈12 by a thickness of 1 〇〇 11111 and a thickness of 1 〇〇 11111 by cvd & The result of removing the laminated insulating film formed on the peripheral portion of the substrate 1 by the polishing method of this embodiment used will be described below. Using the polishing apparatus shown in Fig. 2 described above, the i-th polishing belt 23a to which the ceria abrasive grains shown in Fig. 3 is adhered is fixed as the polishing tape 23. The substrate 2G to be processed is sucked onto the stage 21, and the stage 21 is rotated at a constant speed. In the same manner, the polishing tape 23 is fed at a speed of one turn, and the polishing tape 23 is pressed against the peripheral edge portion of the substrate to polish the peripheral edge portion of the substrate. Compared with the past technology, the diamond abrasive grain #4〇〇〇 and the diamond abrasive grain #1〇〇〇〇 group - although the grinding time is increased to 2 times, but the surface roughness after grinding is reduced to 1 /5 and only borrow By grinding and removing the diamond particles of the same particle diameter, the grinding time was shortened to 1/1 〇, and the surface roughness after grinding was reduced to about 1 /2. On the other hand, the right grinding ability of the ruthenium substrate 10 is lower than that of the diamond abrasive grain #4, and is 1/5 lower than that of the drill grain #10000. These explanations show that the oxidized abrasive grains effectively exert a chemical action on the film or the SlN film 12. Moreover, it also shows that there is no chemical action for Si, but it depends on the mechanical strength of the abrasive particles themselves. 130431.doc 200906541 When the peripheral portion of the substrate is polished, since the surface to be polished has a curvature in the cross-sectional direction and the circumferential direction of the substrate 1G, the polishing head 24 is polished while rotating the contact surface along the curvature of the substrate W. At this time, it is necessary to excessively grind in order not to cause grinding residue. This excessive polishing advantageously exhibits characteristics of a cerium oxide abrasive grain having a high grinding ability called SiN or a low abrasive ability to si. In other words, the cerium oxide abrasive grains are extremely effective for polishing and removing the unnecessary film (Si 〇 2 film, SiN film) deposited on the peripheral portion of the ruthenium substrate 1 。. Thus, by using the first polishing tape 23a to which the sieving abrasive grains are fixedly adhered, the surface roughness after polishing is sufficiently reduced in comparison with the combination of the prior art diamond abrasive grains #4〇〇〇 and the diamond abrasive grains. Time is growing. Therefore, in order to shorten the polishing time by the above result, the polishing tape 23a to which the cerium oxide abrasive grains (# 10000) are fixed and adhered is combined with the polishing tape 23b to which the diamond abrasive grains (#10000) are fixedly adhered. The embodiment will be described. Initially, the laminated insulating film is removed by grinding with the i-th polishing tape 23a to which the cerium oxide abrasive grains are fixedly adhered, and is continuously polished until one part of the Si of the underlying layer is exposed. Next, it was changed to the second polishing tape 23b which was fixedly adhered to the diamond abrasive grains having higher polishing ability to the ruthenium substrate than the cerium oxide abrasive grains. Thus, the total grinding time is improved to about 1/2 as compared with the case where only the cerium oxide abrasive grains are used. That is, the time is the same as the combination of the prior art diamond abrasive grain #4〇〇〇 and the diamond abrasive grain #10000. Moreover, the surface roughness after grinding at this time is reduced to about 1/3 with respect to the combination of the diamond abrasive grain #4000 of the prior art and the diamond abrasive grain #1〇〇〇〇. In addition, the grinding stage of the i-th polishing tape 23a of the cerium oxide abrasive grain is separated from the polishing stage of the second polishing tape 2 of the diamond abrasive grain, and if it is used, the rotation is maintained by 130431.doc 12 200906541. It is more efficient to switch the grinding stage by changing the rotational load of the engine of the target substrate. Further, instead of being polished by the polishing of the first polishing tape 233 and then by the polishing of the second polishing tape 23b, it will be replaced by the first! The polishing of the polishing tape 23a and the polishing by the second polishing tape 23b are repeatedly exchanged, and the same effects as described above can be obtained. Further, as shown in FIG. 4, the second polishing belt 23a to which the cerium oxide abrasive grains are fixed and adhered, and the second polishing to which the diamond abrasive grains are fixed and adhered are fixed at different portions of the peripheral portion of the substrate 2 to be processed. The belt 23b is simultaneously contacted, so that the cerium oxide abrasive disc diamond abrasive grains are ground in parallel. In this case, the grinding time is improved to about 1/3 as compared with the case of only the sinter granules. Compared with the previous technology, the combination of diamond abrasive grains and iron abrasive grains (4) _, the grinding time is shortened to 2/3, and the surface roughness after grinding is reduced to about 1/:3. 1, the fruit shows 'by the grinding of the oxidized abrasive grains for the high hardness of the medium U and the SiN film 12, and the bottom (four) substrate h after the hunting and grinding of the abrasive particles, to multiply the efficiency The removal efficiency of the laminate and the insulating film is improved. 〇 : In this embodiment, it is possible to fix and adhere the ruthenium dioxide to the plate having a high hardness such as 臈U and SiN film 12 in the surface shape of the dream substrate. The base of the 葚古魏^ brother 1 grinding belt 23 a and the fixed 有 有 有 第 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 Reduced defects and improved yield. From the point of view of productivity, 'by grinding with chemically abrasive grains and using abrasive grains having a mechanical effect of 130431.doc 13-200906541, it is possible to efficiently remove oxidized cerium or nitrite It is an unnecessary film or uneven surface of the hardness film, and the precision of the polished surface can be improved. Further, in place of the laminated film of the Si〇2 film 11 and the 8丨1 film 12, a film thickness of 200 nmiSi〇2 is formed on the germanium substrate 10 by the cVD method, and the above-mentioned pattern is used to remove the film on the peripheral edge portion of the substrate at this time. The polishing apparatus shown in Fig. 4 uses this embodiment. As a result, compared with the previous combination of diamond #4〇〇〇 and #1〇〇〇〇, the combination of cerium oxide abrasive grain #10000 and diamond abrasive grain #10000, the grinding time is shortened to about 1 /2 'surface roughness Improved to 丨/3. Similarly, a SiN film having a thickness of 2 Å was formed on the ruthenium substrate 1 by a CVD method, and the present embodiment was used to remove the film at the peripheral edge portion of the substrate at this time using the polishing apparatus shown in Fig. 4 described above. As a result, compared with the previous combination of diamond #4〇〇〇 and #10000, the combination of cerium oxide abrasive grain #10000 and diamond abrasive grain #1〇〇〇〇' grinding time is shortened to about 3/4, and the surface is thick. The degree is improved to 丨/3. (Second Embodiment) Figs. 5A to 5C are cross-sectional views showing a substrate processing procedure according to a second embodiment of the present invention. Fig. 5A shows a state in which the groove is formed, Fig. 5B shows a state before polishing of the substrate to be processed, and Fig. 5C shows a state after polishing of the substrate to be processed. In the figure, 10 is a ruthenium substrate, and the ruthenium is a ruthenium membrane, a 12-series 8 membrane, and a 13-gauge acicular projection. As shown in FIG. 5A, the SiN film 12 and the Si〇-U are sequentially deposited on the surface of the ruthenium substrate 10 by the LP-CVD method, and patterned to form a laminate of the film 12 and the Si 〇 2 film 11. A hard mask made of a film. Thereafter, the germanium substrate 1 is etched by the RIE method using the hard mask to form a trench. At this time, the peripheral edge portion of the substrate is 130431.doc -14-200906541, and the etching is disturbed to form a residue of the mask or a needle-like protrusion i3 of the si. Thereafter, 8 丨〇 2 臈 11 was peeled off by wet etching. The state in which the SKD2 film 11 is peeled off is shown in Fig. 5B, and the SiN film 12 and the dream needle-like projection 13 are formed on the peripheral portion of the stone substrate ι. The polishing method of the present embodiment is applied to the removal of the acicular protrusions 13 and the substrate flattening of the SiN film 12 which are formed during the formation of the grooves. The present embodiment is also applicable to a grinding method in which a grinding belt 23a to which a cerium oxide abrasive grain (4) is fixed and a grinding belt which is fixed with a diamond abrasive grain #i 〇_ is used. The polishing apparatus shown in Fig. 4 was used to perform polishing under a certain grinding condition to trim the cross-sectional view of the substrate to be polished as shown in Fig. 5C. Here, only the abrasive belt 23 of the cerium oxide abrasive grain is used for the test _臈12 and the 矽 needle-like dog 13 removal and the flattening of the substrate ,, compared with the prior art diamond abrasive grain #4000 and diamond abrasive grains The combination of #1〇〇〇〇, even if the grinding time is increased to 2 times, φ cannot complete the removal of the material protrusions 13. This is due to the progress of s_12 (4), but the material (4) 13〇 and the flattening of the substrate become slower. On the other hand, when a polishing method in which the first polishing tape 23a of the cerium oxide abrasive grains is combined with the second polishing tape 23b of the diamond abrasive grains is used, the polishing time is shortened to 2/3' as compared with the prior art. The grinding damage caused by the diamond abrasive grain #4000 disappeared, and the surface roughness was also improved to 1/3. That is, it is necessary to take a look at the combination of the cerium oxide abrasive grain and the second abrasive tape 23b of the diamond abrasive grain when the oxidized stone or the nitrite is removed and the substrate is flattened. More effective. According to the present embodiment, the substrate to be processed such as the smear-shaped protrusions 13 of the samarium-based sm film 12 is fixed and dried by the first polishing tape 23a having the cerium oxide abrasive grains. The second polishing tape 23b having the diamond grinding is polished, and the unnecessary film dome 13 of the peripheral portion of the substrate can be removed efficiently, and the polishing surface accuracy can be improved. Therefore, the same effect as in the first embodiment is applied.乂 (3rd embodiment) Ο
圖6A〜6D係本發明之第3實施形態之基板處理步驟的剖 面圖。 本實施形態，係為去除金屬膜（Ni、c〇等）之矽化物形成 和產生之基板周緣部的金屬污染的適用例。 盲先，如圖6A所示，使SiN膜12堆積於矽基板1〇上之 後，於SiN膜12上塗布抗韻膜（無圖示）。其後，將抗钱膜 作為遮罩藉由光微影技術於矽基板10上形成開口部。 其次，如圖6B所示，例如藉由濺鍍法堆積金屬（c〇),於 SiN膜12及基板10之露出部分形成金屬膜（c〇臈沁1。其 後，藉由進行熱處理，如圖6C所示，僅使於開口部露出之 基板Si之表面與金屬反應，形成矽化膜（c〇Si膜沁2。未反 應之金屬臈61藉由蝕刻等去除。此時，若未充分進行向矽 基板1〇之周緣部之抗蝕膜的塗布，便有可能於矽基板1〇上 形成開口部時於周緣部露出基板Si。當於基板Si露出於周 緣部之狀態下堆積金屬膜並進行熱處理時，於周緣部露出 之Sl與金屬將發生反應，形成矽化膜等金屬膜與Si之反應 物’有由石夕基板丨〇之周緣部產生金屬污染之問題。 130431.doc -16· 200906541 為防止該金屬污染’最好於矽化膜等反應物形成後，去 除周緣部之金屬矽化膜62及SiN膜12。在此，去除基板周 緣部之SiN膜12 ’如亦可由圖6C獲知，係由於研磨基板周 緣部之金屬石夕化膜62時周邊之SiN膜12將成為障礙。即， 係由於若金屬矽化膜62之周邊殘留有SiNmi2，則利用機 械效果之金屬矽化膜62之研磨將無法進展。 對去除產生於基板周緣部之金屬污染而使用本實施形態 之結果加以說明。使用以上實施形態所說明之將固定粘著 有二氧化鈽磨粒之第1研磨帶23a與固定粘著有修整用鑽石 磨粒之第2研磨帶23b組合之研磨方法。 使用上述圖4所示之研磨裝置，將被處理基板2〇吸著於 台21上，並以一定速度旋轉台21。再者，一邊以一定速度 达出研磨帶23(23a、23b)，一邊以一定壓力加壓於基板周 緣部並實施研磨，修整如圖6D所示之基板剖面圖。該情 形，除利用藉由第2研磨帶23]3之機械效果的研磨以外，並 行進行利用藉由第1研磨帶23 a之化學效果的研磨。因此， 可以有效率地研磨應去除之金屬矽化膜之周邊的siN臈， 進而確實地進行金屬矽化膜之研磨去除。 相對於過去技術之鑽石粗磨粒（#4〇〇〇)與修整用磨粒 (#10000)之組合，於同一研磨條件下研磨時，研磨時間縮 短至2/3。再者，於過去技術所觀察到之因粗磨粒之鑽石 造成之研磨損傷消失，表面粗糙度改善至1/3。在此，表 面粗糙度改善係由於鑽石僅用於修整用磨粒，而未用粗磨 粒。再者’儘管未使用鑽石之粗磨粒而研磨時間縮短係由 130431.doc 200906541 二藉由使用固定粘著有二氧化鈽磨粒之研磨帶23a，可以 —子政果有效地去除基板周緣部之金屬矽化膜之周邊的 SiN 膜。 本實施形態，顯不使用氮化臈（si氮化膜系）作為遮罩之 - p 1而亦可用氧化膜（Si氧化膜系）。又，使用於在石夕化 . ㈣成後形絲化膜或氮化膜，暫時抑制金屬對其他程序 之巧染後，同時去除石夕化膜與氧化膜或氮化膜之情形’亦 f、可獲得研磨時間之縮短與表面粗趟度之改善效果。 (變形例） 本發明非限定於上料實施形態。實施形態中，作 2基板周緣部之無„顯示心〇2及㈣，但未必限定於 :二如亦可適用於Si0C、SiCN。換言之，可適用氧化 矽系、氮化矽系之無用膜。 之^磨^化㈣、膜或氮切系膜料，用二氧化飾磨粒 之研磨帶難以進行研磨去险 及向該==，例如單_、非晶 ‘'臈（鹤、銅mu Z膜、碳膜'金屬 合物）以上層、下層、或混合層^ :有該等材料之化 有機械之研磨去除能力去除時，組合具 辨石專之磨粒為有效。 實施形態中，作為對於氧化 學效果之磨粒雖使用二氧 ;^虱化石夕系之膜具有化 子亦可使用二氧化石夕粒子。 ’然而代替二氧化飾粒6A to 6D are cross-sectional views showing a substrate processing procedure in a third embodiment of the present invention. This embodiment is an application example for removing the metallization of the metal film (Ni, c, etc.) and the metal contamination of the peripheral portion of the substrate. Blind first, as shown in Fig. 6A, after the SiN film 12 is deposited on the tantalum substrate 1A, a resist film (not shown) is applied onto the SiN film 12. Thereafter, the anti-money film is used as a mask to form an opening on the ruthenium substrate 10 by photolithography. Next, as shown in FIG. 6B, for example, a metal (c〇) is deposited by sputtering, and a metal film (c〇臈沁1) is formed on the exposed portions of the SiN film 12 and the substrate 10. Thereafter, heat treatment is performed, for example, As shown in Fig. 6C, only the surface of the substrate Si exposed at the opening portion reacts with the metal to form a deuterated film (c〇Si film 2). The unreacted metal crucible 61 is removed by etching or the like. When the resist film is applied to the peripheral portion of the substrate 1 , the substrate Si may be exposed on the peripheral portion when the opening is formed on the substrate 1 , and the metal film may be deposited while the substrate Si is exposed to the peripheral portion. When heat treatment is performed, S1 exposed at the peripheral edge portion reacts with the metal to form a metal film such as a vaporized film and a reaction material of Si, which causes a problem of metal contamination by the peripheral portion of the stone substrate. 130431.doc -16· 200906541 In order to prevent the metal contamination, it is preferable to remove the metal halide film 62 and the SiN film 12 in the peripheral portion after the formation of a reactant such as a vaporized film. Here, the SiN film 12' from which the peripheral portion of the substrate is removed can also be known from FIG. 6C. Because of the gold on the periphery of the substrate When the Sihua film 62 is used, the SiN film 12 in the periphery is an obstacle. That is, if SiNmi2 remains in the periphery of the metal film 62, the polishing of the metal film 62 by the mechanical effect cannot be progressed. The metal contamination of the peripheral portion is described using the results of the present embodiment. The first polishing tape 23a to which the cerium oxide abrasive grains are fixed and adhered, and the first to which the diamond polishing particles are fixed and adhered, as described in the above embodiment, are used. 2. Grinding method in which the polishing tape 23b is combined. Using the polishing apparatus shown in Fig. 4, the substrate 2 to be processed is sucked onto the stage 21, and the stage 21 is rotated at a constant speed. Further, the polishing is performed at a constant speed. The belt 23 (23a, 23b) is pressed against the peripheral edge portion of the substrate at a constant pressure and polished to trim the cross-sectional view of the substrate as shown in Fig. 6D. In this case, the mechanical effect by the second polishing belt 23]3 is utilized. In addition to the polishing, the polishing by the chemical effect of the first polishing tape 23a is performed in parallel. Therefore, the siN臈 around the metal deuterated film to be removed can be efficiently polished, and the metal can be surely performed. Grinding removal of the film. Compared to the combination of diamond coarse abrasive grains (#4〇〇〇) and trimming abrasive particles (#10000) of the prior art, the grinding time is shortened to 2/3 when ground under the same grinding conditions. Furthermore, the grinding damage caused by the coarse abrasive grains observed in the past technology disappears, and the surface roughness is improved to 1/3. Here, the surface roughness is improved because the diamond is only used for dressing abrasive grains, and No coarse abrasive particles are used. In addition, although the grinding time is shortened without using the coarse abrasive grains of the diamond, it is possible to reduce the grinding time by using the grinding belt 23a which is fixedly adhered with the cerium oxide abrasive grains by using 130431.doc 200906541. The SiN film around the metal deuterated film at the peripheral portion of the substrate is effectively removed. In the present embodiment, it is obvious that a tantalum nitride (si nitride film system) is used as the mask - p 1 and an oxide film (Si oxide film system) can also be used. In addition, it is used in Shi Xihua. (4) After forming a post-filamentized film or a nitride film, temporarily suppressing the metal to other processes, and simultaneously removing the Shihua film and the oxide film or the nitride film. The improvement of the grinding time and the improvement of the surface roughness can be obtained. (Modification) The present invention is not limited to the loading embodiment. In the embodiment, the peripheral portion of the substrate 2 is not shown as the cores 2 and (4). However, the present invention is not limited thereto. For example, it may be applied to SiO 2 or SiCN. In other words, a ruthenium oxide-based or tantalum nitride-based useless film may be used. ^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ , carbon film 'metal compound> upper layer, lower layer, or mixed layer ^: When these materials are mechanically removed by mechanical removal, it is effective to combine the abrasive particles of the stone. In the embodiment, Although the oxidative effect of the abrasive grains is dioxin; the bismuth fossil film can also use cerium oxide particles. 'However, instead of the oxidized granules
SiC粒子。 ’代替鑽石粒子亦可使用 實施形態說明了利用使用 /、有化學效果之粒子作為主 13043I.doc 200906541 成分之磨粒作為研磨 之研磨帶的固定磨+ 然而亦可為一邊 疋厲粒方式加以說明， 磨粒子之研磨劑，、一邊二與::磨面之接觸面供給含有研 藉由使用鑽… 游離磨粒方式。再者， ，更用鑽石磨粒之機械效果的研 粒方式，亦可摄用 '佐祕由 Λ 义於固定磨 J J鉍用游離磨粒方式。 具體而言，如圖7如__ 亦可使固定於研磨頭71之不岣 布72接觸於吸著在 之不織 喑嘴W η 破處理基板20之周緣部，且從 賀嘴73向基板2〇之周邊附近供妗 丨且仅 主成刀之磨粒的研磨液，於與不織布U之接觸為 周緣部。該情形’藉由併 土板 前之實施形態相同的效果^之研磨亦可獲得與之 的效果在此，從嘴嘴73供給者為含有 以具有化學效果之粒子為八 、成刀之磨粒的研磨液，非盥其 板S!反應之藥液。因此， 。土 — ^避免基板表面蝕刻等之不適 且之。 又’只施形態說明了於研磨半導體基板之端部，剖面有 曲率之部分的斜面部之例，然而亦可適用用以辨識㈣基 板周邊之-部分對準時之符號或晶圓主面上之結晶方位所 設之凹口部之研磨。再者，半導體基板並非限定於Si，亦 可使用其他半導體材料。 本發明之其他優點及改良對熟知本技藝者將為易了解 者因此，本發明之較廣範圍並未限於本文所述之特定細 即及代表實施形態。據此’在不脫離本發明所附中請專利 範圍及其均等範圍所界定之一般發明概念之精神或範圍之 下’可對本發明做各種改良。 130431.doc 19 200906541 【圖式簡單說明】 圖ΙΑ、1B係第1實施形態之基板處理步驟的剖面圖 圖2係第1實施形態使用之固 略構成圖； 定磨粒方式之研磨裝置的概 圖3A、 面圖； 3B係圖2之研磨裝置中所使用 之研磨帶之例的剖 圖4係第i實施形態中使用之固定磨粒方式之研磨農置之 另一例的概略構成圖；SiC particles. 'Instead of the diamond particles, an embodiment may be used to describe the use of the abrasive particles using the chemically active particles as the main 13043I.doc 200906541 as a fixed grinding belt for the grinding. However, it may be described as a one-sided method. The grinding agent of the abrasive particles, the side of the two: and the contact surface of the grinding surface are supplied by the research using the free abrasive method. Furthermore, the grinding method of the mechanical effect of the diamond abrasive grains can also be used. The secret is also used in the fixed abrasive J J铋. Specifically, as shown in FIG. 7, the cloth 72 fixed to the polishing head 71 may be brought into contact with the peripheral portion of the non-woven nozzle W η which is immersed in the processing substrate 20, and the substrate is moved from the mouthpiece 73 to the substrate. The polishing liquid which is supplied near the periphery of the crucible and is only the abrasive grains of the main knives is a peripheral portion in contact with the non-woven fabric U. In this case, the effect of the same effect can be obtained by the same effect of the embodiment before the slab. Here, the supplier from the nozzle 73 is a granule containing a chemically effective particle. The slurry, the liquid that is not the reaction of the plate S! Therefore, . Soil — ^ Avoid the discomfort of substrate surface etching, etc. Further, the embodiment only describes an example of a beveled surface in which the end portion of the semiconductor substrate is polished and has a portion having a curvature. However, it is also applicable to identify the symbol on the periphery of the substrate or the main surface of the wafer. Grinding of the notch portion provided by the crystal orientation. Further, the semiconductor substrate is not limited to Si, and other semiconductor materials may be used. Other advantages and modifications of the present invention will be apparent to those skilled in the art. The present invention may be modified in various ways without departing from the spirit and scope of the general inventive concept as defined by the appended claims. 130431.doc 19 200906541 BRIEF DESCRIPTION OF THE DRAWINGS FIG. 2 is a cross-sectional view showing a substrate processing step in the first embodiment, FIG. 2 is a schematic configuration diagram used in the first embodiment, and an overview of a polishing apparatus using a fixed abrasive method. 3A and 3D are cross-sectional views of an example of a polishing belt used in the polishing apparatus of FIG. 2, which is a schematic configuration diagram of another example of a fixed abrasive grain type polishing apparatus used in the first embodiment;
圖5A〜5C係第2實施形態之基板處理步驟的剖面圖. 圖6A〜6D係第3實施形態之基板處理步驟的剖面圖· 圖7係本發明之變形例之游離磨粒方式之研磨裝置的概 略構成圖。 【主要元件符號說明】 10 基板 11 Si02 膜 12 SiN膜 13 針狀突起 20 被處理基板 21 台 22 發動機 23 研磨帶 23a 研磨帶 23b 研磨帶 24 研磨頭 130431 .doc -20· 喷嘴 PET膜 粘合劑 二氧化鈽磨粒 鑽石磨粒 金屬膜 矽化膜 研磨帶 不織布 噴嘴 -21 -5A to 5C are cross-sectional views showing a substrate processing step of the second embodiment. Figs. 6A to 6D are cross-sectional views showing a substrate processing step of the third embodiment. Fig. 7 is a free abrasive type polishing apparatus according to a modification of the present invention. The schematic composition of the figure. [Main component symbol description] 10 Substrate 11 SiO 2 film 12 SiN film 13 Needle-like protrusion 20 Processed substrate 21 Stage 22 Engine 23 Abrasive tape 23a Abrasive tape 23b Abrasive tape 24 Grinding head 130431 .doc -20· Nozzle PET film adhesive Ceria abrasive grain diamond abrasive grain metal film enamel film grinding belt non-woven nozzle 21 -