JP4374038B2 - 基板処理方法 - Google Patents

基板処理方法 Download PDF

Info

Publication number
JP4374038B2
JP4374038B2 JP2007104068A JP2007104068A JP4374038B2 JP 4374038 B2 JP4374038 B2 JP 4374038B2 JP 2007104068 A JP2007104068 A JP 2007104068A JP 2007104068 A JP2007104068 A JP 2007104068A JP 4374038 B2 JP4374038 B2 JP 4374038B2
Authority
JP
Japan
Prior art keywords
polishing
substrate
film
abrasive grains
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007104068A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008263027A (ja
Inventor
厚 重田
大 福島
博之 矢野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2007104068A priority Critical patent/JP4374038B2/ja
Priority to TW097112893A priority patent/TW200906541A/zh
Priority to US12/100,450 priority patent/US20080254719A1/en
Publication of JP2008263027A publication Critical patent/JP2008263027A/ja
Application granted granted Critical
Publication of JP4374038B2 publication Critical patent/JP4374038B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B21/00Machines or devices using grinding or polishing belts; Accessories therefor
    • B24B21/002Machines or devices using grinding or polishing belts; Accessories therefor for grinding edges or bevels

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2007104068A 2007-04-11 2007-04-11 基板処理方法 Expired - Fee Related JP4374038B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007104068A JP4374038B2 (ja) 2007-04-11 2007-04-11 基板処理方法
TW097112893A TW200906541A (en) 2007-04-11 2008-04-09 Substrate processing method
US12/100,450 US20080254719A1 (en) 2007-04-11 2008-04-10 Substrate processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007104068A JP4374038B2 (ja) 2007-04-11 2007-04-11 基板処理方法

Publications (2)

Publication Number Publication Date
JP2008263027A JP2008263027A (ja) 2008-10-30
JP4374038B2 true JP4374038B2 (ja) 2009-12-02

Family

ID=39854147

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007104068A Expired - Fee Related JP4374038B2 (ja) 2007-04-11 2007-04-11 基板処理方法

Country Status (3)

Country Link
US (1) US20080254719A1 (enExample)
JP (1) JP4374038B2 (enExample)
TW (1) TW200906541A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5254575B2 (ja) * 2007-07-11 2013-08-07 株式会社東芝 研磨装置および研磨方法
JP2010162624A (ja) * 2009-01-13 2010-07-29 Ebara Corp 研磨装置および研磨方法
JP5571409B2 (ja) 2010-02-22 2014-08-13 株式会社荏原製作所 半導体装置の製造方法
JP2011177842A (ja) 2010-03-02 2011-09-15 Ebara Corp 研磨装置及び研磨方法
DE102010042040A1 (de) 2010-10-06 2012-04-12 Siltronic Ag Verfahren zum Schleifen einer Halbleiterscheibe
JP6244962B2 (ja) 2014-02-17 2017-12-13 株式会社Sumco 半導体ウェーハの製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5534106A (en) * 1994-07-26 1996-07-09 Kabushiki Kaisha Toshiba Apparatus for processing semiconductor wafers
US6602439B1 (en) * 1997-02-24 2003-08-05 Superior Micropowders, Llc Chemical-mechanical planarization slurries and powders and methods for using same
JP4113282B2 (ja) * 1998-05-07 2008-07-09 スピードファム株式会社 研磨組成物及びそれを用いたエッジポリッシング方法
DE19842709A1 (de) * 1998-09-17 2000-03-30 Siemens Ag Polierflüssigkeit zum Polieren von Bauelementen, vorzugsweise Wafern, insbesondere zum Chemisch-Mechanischen Polieren derartiger Bauelemente
JP3141939B2 (ja) * 1998-11-26 2001-03-07 日本電気株式会社 金属配線形成方法
US6267649B1 (en) * 1999-08-23 2001-07-31 Industrial Technology Research Institute Edge and bevel CMP of copper wafer
JP4090247B2 (ja) * 2002-02-12 2008-05-28 株式会社荏原製作所 基板処理装置
JP2007012943A (ja) * 2005-06-30 2007-01-18 Toshiba Corp 基板処理方法

Also Published As

Publication number Publication date
TWI354598B (enExample) 2011-12-21
US20080254719A1 (en) 2008-10-16
TW200906541A (en) 2009-02-16
JP2008263027A (ja) 2008-10-30

Similar Documents

Publication Publication Date Title
US7063597B2 (en) Polishing processes for shallow trench isolation substrates
EP0946979B1 (en) Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad
JP4374038B2 (ja) 基板処理方法
CN102893376A (zh) 铜晶圆研磨的化学平坦化
US6653242B1 (en) Solution to metal re-deposition during substrate planarization
US20130061876A1 (en) Semiconductor Device Surface Clean
TWI294456B (enExample)
TW201432804A (zh) SiC基板之製造方法
US20030168169A1 (en) Chemical-mechanical polishing apparatus, polishing pad and method for manufacturing semiconductor device
JP4163494B2 (ja) 半導体素子製造方法
JP2008226935A (ja) 半導体装置の製造方法
JP7548689B2 (ja) タングステン用の化学機械研磨組成物及び方法
CN100521108C (zh) 半导体器件的制造方法
US7125321B2 (en) Multi-platen multi-slurry chemical mechanical polishing process
CN111599677B (zh) 半导体结构及其形成方法
US20060261041A1 (en) Method for manufacturing metal line contact plug of semiconductor device
JP2000012543A (ja) 半導体集積回路装置の製造方法
JP4301305B2 (ja) 基体研磨方法、半導体装置の製造方法
US20050142988A1 (en) CMP process using slurry containing abrasive of low concentration
JP2005262406A (ja) 研磨装置および半導体装置の製造方法
JPH08323614A (ja) 化学的機械研磨方法および装置
US20060088976A1 (en) Methods and compositions for chemical mechanical polishing substrates
CN100414666C (zh) 复合式化学机械抛光法
JP2004128112A (ja) 半導体装置の製造方法
TWI573188B (zh) 化學機械硏磨半導體基板之方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090312

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090611

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090616

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090715

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090811

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090904

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120911

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120911

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120911

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130911

Year of fee payment: 4

LAPS Cancellation because of no payment of annual fees