TWI294456B - - Google Patents

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Publication number
TWI294456B
TWI294456B TW092126509A TW92126509A TWI294456B TW I294456 B TWI294456 B TW I294456B TW 092126509 A TW092126509 A TW 092126509A TW 92126509 A TW92126509 A TW 92126509A TW I294456 B TWI294456 B TW I294456B
Authority
TW
Taiwan
Prior art keywords
honing
agent composition
mass
semiconductor integrated
integrated circuit
Prior art date
Application number
TW092126509A
Other languages
English (en)
Chinese (zh)
Other versions
TW200409808A (en
Inventor
Hiroyuki Kamiya
Katsuyuki Tsugita
Original Assignee
Asahi Glass Co Ltd
Seimi Chem Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd, Seimi Chem Kk filed Critical Asahi Glass Co Ltd
Publication of TW200409808A publication Critical patent/TW200409808A/zh
Application granted granted Critical
Publication of TWI294456B publication Critical patent/TWI294456B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H10P52/00—
    • H10P52/403—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Disintegrating Or Milling (AREA)
TW092126509A 2002-09-25 2003-09-25 Polishing compound composition, method for producing same and polishing method TW200409808A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002279193 2002-09-25

Publications (2)

Publication Number Publication Date
TW200409808A TW200409808A (en) 2004-06-16
TWI294456B true TWI294456B (enExample) 2008-03-11

Family

ID=32040447

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092126509A TW200409808A (en) 2002-09-25 2003-09-25 Polishing compound composition, method for producing same and polishing method

Country Status (10)

Country Link
US (1) US20050194565A1 (enExample)
EP (1) EP1544901B1 (enExample)
JP (1) JPWO2004030062A1 (enExample)
KR (1) KR20050057209A (enExample)
CN (1) CN1682354B (enExample)
AT (1) ATE452422T1 (enExample)
AU (1) AU2003266619A1 (enExample)
DE (1) DE60330578D1 (enExample)
TW (1) TW200409808A (enExample)
WO (1) WO2004030062A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4759219B2 (ja) * 2003-11-25 2011-08-31 株式会社フジミインコーポレーテッド 研磨用組成物
US20060214133A1 (en) * 2005-03-17 2006-09-28 Fuji Photo Film Co., Ltd. Metal polishing solution and polishing method
WO2006120727A1 (ja) * 2005-05-06 2006-11-16 Asahi Glass Company, Limited 銅配線研磨用組成物および半導体集積回路表面の研磨方法
US7955519B2 (en) * 2005-09-30 2011-06-07 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
WO2007102138A2 (en) * 2007-01-02 2007-09-13 Freescale Semiconductor, Inc. Barrier slurry compositions and barrier cmp methods
KR20130027057A (ko) * 2006-07-05 2013-03-14 히타치가세이가부시끼가이샤 Ｃｍｐ용 연마액 및 연마방법
US20080020680A1 (en) * 2006-07-24 2008-01-24 Cabot Microelectronics Corporation Rate-enhanced CMP compositions for dielectric films
JP2008091569A (ja) * 2006-09-29 2008-04-17 Fujifilm Corp 研磨用組成物及び研磨方法
CN102528638A (zh) * 2010-12-29 2012-07-04 中芯国际集成电路制造(上海)有限公司 一种铜化学机械研磨方法及设备
CN103503118B (zh) * 2011-06-03 2016-01-20 旭硝子株式会社 研磨剂及研磨方法
US9644274B2 (en) * 2011-07-04 2017-05-09 Mitsubishi Gas Chemical Company, Inc. Etching solution for copper or a compound comprised mainly of copper
KR20160002728A (ko) * 2013-04-25 2016-01-08 히타치가세이가부시끼가이샤 Cmp용 연마액 및 이것을 사용한 연마 방법
CN103484866B (zh) * 2013-09-23 2016-05-18 无锡阳工机械制造有限公司 一种抛光防腐浆料
CN103484865B (zh) * 2013-09-23 2016-04-13 无锡阳工机械制造有限公司 一种金属抛光防腐浆料
US9281210B2 (en) * 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
CN107001916B (zh) * 2014-12-05 2019-01-22 3M创新有限公司 磨料组合物
US10685935B2 (en) * 2017-11-15 2020-06-16 Taiwan Semiconductor Manufacturing Company, Ltd. Forming metal bonds with recesses
KR102773634B1 (ko) * 2022-04-13 2025-02-25 에스케이엔펄스 주식회사 반도체 공정용 조성물 및 이를 이용한 반도체 소자의 연마방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6190237B1 (en) * 1997-11-06 2001-02-20 International Business Machines Corporation pH-buffered slurry and use thereof for polishing
US6063306A (en) * 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
JP2001023940A (ja) * 1999-07-09 2001-01-26 Seimi Chem Co Ltd 半導体集積回路の平坦化方法及びそのための化学的機械研磨スラリ
JP4156137B2 (ja) * 1999-07-19 2008-09-24 株式会社トクヤマ 金属膜用研磨剤
JP4683681B2 (ja) * 1999-10-29 2011-05-18 日立化成工業株式会社 金属用研磨液及びそれを用いた基板の研磨方法
TWI268286B (en) * 2000-04-28 2006-12-11 Kao Corp Roll-off reducing agent
JP4195212B2 (ja) * 2000-10-23 2008-12-10 花王株式会社 研磨液組成物
JP2002170790A (ja) * 2000-11-30 2002-06-14 Showa Denko Kk 半導体基板研磨用組成物、半導体配線基板およびその製造方法
US6740589B2 (en) * 2000-11-30 2004-05-25 Showa Denko Kabushiki Kaisha Composition for polishing semiconductor wafer, semiconductor circuit wafer, and method for producing the same
US6612911B2 (en) * 2001-01-16 2003-09-02 Cabot Microelectronics Corporation Alkali metal-containing polishing system and method
JP2002270546A (ja) * 2001-03-07 2002-09-20 Hitachi Chem Co Ltd 導体用研磨液及びこれを用いた研磨方法
US20030104770A1 (en) * 2001-04-30 2003-06-05 Arch Specialty Chemicals, Inc. Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
KR100939472B1 (ko) * 2001-10-26 2010-01-29 아사히 가라스 가부시키가이샤 연마제, 그 제조방법 및 연마방법

Also Published As

Publication number Publication date
JPWO2004030062A1 (ja) 2006-01-26
EP1544901A4 (en) 2007-04-11
EP1544901B1 (en) 2009-12-16
DE60330578D1 (de) 2010-01-28
CN1682354B (zh) 2010-10-06
CN1682354A (zh) 2005-10-12
AU2003266619A8 (en) 2004-04-19
AU2003266619A1 (en) 2004-04-19
WO2004030062A1 (ja) 2004-04-08
TW200409808A (en) 2004-06-16
ATE452422T1 (de) 2010-01-15
US20050194565A1 (en) 2005-09-08
EP1544901A1 (en) 2005-06-22
KR20050057209A (ko) 2005-06-16

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MM4A Annulment or lapse of patent due to non-payment of fees