CN1682354B - 研磨剂组合物、其制备方法及研磨方法 - Google Patents

研磨剂组合物、其制备方法及研磨方法 Download PDF

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Publication number
CN1682354B
CN1682354B CN038224232A CN03822423A CN1682354B CN 1682354 B CN1682354 B CN 1682354B CN 038224232 A CN038224232 A CN 038224232A CN 03822423 A CN03822423 A CN 03822423A CN 1682354 B CN1682354 B CN 1682354B
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CN
China
Prior art keywords
aforementioned
contain
grinding
abrasive
feature
Prior art date
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Expired - Fee Related
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CN038224232A
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English (en)
Chinese (zh)
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CN1682354A (zh
Inventor
神谷广幸
次田克幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KIYOMI CHEMICAL CO Ltd
AGC Inc
Original Assignee
KIYOMI CHEMICAL CO Ltd
Asahi Glass Co Ltd
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Publication of CN1682354A publication Critical patent/CN1682354A/zh
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Disintegrating Or Milling (AREA)
CN038224232A 2002-09-25 2003-09-25 研磨剂组合物、其制备方法及研磨方法 Expired - Fee Related CN1682354B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002279193 2002-09-25
JP279193/2002 2002-09-25
PCT/JP2003/012258 WO2004030062A1 (ja) 2002-09-25 2003-09-25 研磨剤組成物、その製造方法及び研磨方法

Publications (2)

Publication Number Publication Date
CN1682354A CN1682354A (zh) 2005-10-12
CN1682354B true CN1682354B (zh) 2010-10-06

Family

ID=32040447

Family Applications (1)

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CN038224232A Expired - Fee Related CN1682354B (zh) 2002-09-25 2003-09-25 研磨剂组合物、其制备方法及研磨方法

Country Status (10)

Country Link
US (1) US20050194565A1 (enExample)
EP (1) EP1544901B1 (enExample)
JP (1) JPWO2004030062A1 (enExample)
KR (1) KR20050057209A (enExample)
CN (1) CN1682354B (enExample)
AT (1) ATE452422T1 (enExample)
AU (1) AU2003266619A1 (enExample)
DE (1) DE60330578D1 (enExample)
TW (1) TW200409808A (enExample)
WO (1) WO2004030062A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4759219B2 (ja) * 2003-11-25 2011-08-31 株式会社フジミインコーポレーテッド 研磨用組成物
US20060214133A1 (en) * 2005-03-17 2006-09-28 Fuji Photo Film Co., Ltd. Metal polishing solution and polishing method
EP1879223A4 (en) * 2005-05-06 2009-07-22 Asahi Glass Co Ltd COMPOSITION FOR POLISHING A COPPER WIRING AND METHOD FOR POLISHING THE SURFACE OF AN INTEGRATED SEMICONDUCTOR CIRCUIT
US7955519B2 (en) * 2005-09-30 2011-06-07 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
EP1984467B1 (en) * 2006-02-03 2012-03-21 Freescale Semiconductor, Inc. Barrier slurry compositions and barrier cmp methods
KR20120002624A (ko) * 2006-07-05 2012-01-06 히다치 가세고교 가부시끼가이샤 Ｃｍｐ용 연마액 및 연마방법
US20080020680A1 (en) * 2006-07-24 2008-01-24 Cabot Microelectronics Corporation Rate-enhanced CMP compositions for dielectric films
JP2008091569A (ja) * 2006-09-29 2008-04-17 Fujifilm Corp 研磨用組成物及び研磨方法
CN102528638A (zh) * 2010-12-29 2012-07-04 中芯国际集成电路制造(上海)有限公司 一种铜化学机械研磨方法及设备
WO2012165376A1 (ja) * 2011-06-03 2012-12-06 旭硝子株式会社 研磨剤および研磨方法
JP5971246B2 (ja) * 2011-07-04 2016-08-17 三菱瓦斯化学株式会社 銅または銅を主成分とする化合物のエッチング液
US20160086819A1 (en) * 2013-04-25 2016-03-24 Hitachi Chemical Company, Ltd. Cmp polishing solution and polishing method using same
CN103484866B (zh) * 2013-09-23 2016-05-18 无锡阳工机械制造有限公司 一种抛光防腐浆料
CN103484865B (zh) * 2013-09-23 2016-04-13 无锡阳工机械制造有限公司 一种金属抛光防腐浆料
US9281210B2 (en) 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
EP3227098B1 (en) * 2014-12-05 2022-06-15 3M Innovative Properties Company Abrasive composition
US10685935B2 (en) * 2017-11-15 2020-06-16 Taiwan Semiconductor Manufacturing Company, Ltd. Forming metal bonds with recesses
KR102773634B1 (ko) 2022-04-13 2025-02-25 에스케이엔펄스 주식회사 반도체 공정용 조성물 및 이를 이용한 반도체 소자의 연마방법

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US6190237B1 (en) * 1997-11-06 2001-02-20 International Business Machines Corporation pH-buffered slurry and use thereof for polishing
US6063306A (en) * 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
JP2001023940A (ja) * 1999-07-09 2001-01-26 Seimi Chem Co Ltd 半導体集積回路の平坦化方法及びそのための化学的機械研磨スラリ
JP4156137B2 (ja) * 1999-07-19 2008-09-24 株式会社トクヤマ 金属膜用研磨剤
JP4683681B2 (ja) * 1999-10-29 2011-05-18 日立化成工業株式会社 金属用研磨液及びそれを用いた基板の研磨方法
TWI268286B (en) * 2000-04-28 2006-12-11 Kao Corp Roll-off reducing agent
JP4195212B2 (ja) * 2000-10-23 2008-12-10 花王株式会社 研磨液組成物
US6740589B2 (en) * 2000-11-30 2004-05-25 Showa Denko Kabushiki Kaisha Composition for polishing semiconductor wafer, semiconductor circuit wafer, and method for producing the same
JP2002170790A (ja) * 2000-11-30 2002-06-14 Showa Denko Kk 半導体基板研磨用組成物、半導体配線基板およびその製造方法
US6612911B2 (en) * 2001-01-16 2003-09-02 Cabot Microelectronics Corporation Alkali metal-containing polishing system and method
JP2002270546A (ja) * 2001-03-07 2002-09-20 Hitachi Chem Co Ltd 導体用研磨液及びこれを用いた研磨方法
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Also Published As

Publication number Publication date
CN1682354A (zh) 2005-10-12
KR20050057209A (ko) 2005-06-16
EP1544901A1 (en) 2005-06-22
EP1544901A4 (en) 2007-04-11
TWI294456B (enExample) 2008-03-11
AU2003266619A1 (en) 2004-04-19
ATE452422T1 (de) 2010-01-15
TW200409808A (en) 2004-06-16
EP1544901B1 (en) 2009-12-16
WO2004030062A1 (ja) 2004-04-08
US20050194565A1 (en) 2005-09-08
DE60330578D1 (de) 2010-01-28
JPWO2004030062A1 (ja) 2006-01-26
AU2003266619A8 (en) 2004-04-19

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