TW200409808A - Polishing compound composition, method for producing same and polishing method - Google Patents
Polishing compound composition, method for producing same and polishing method Download PDFInfo
- Publication number
- TW200409808A TW200409808A TW092126509A TW92126509A TW200409808A TW 200409808 A TW200409808 A TW 200409808A TW 092126509 A TW092126509 A TW 092126509A TW 92126509 A TW92126509 A TW 92126509A TW 200409808 A TW200409808 A TW 200409808A
- Authority
- TW
- Taiwan
- Prior art keywords
- honing
- agent composition
- copper
- weight
- polishing
- Prior art date
Links
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000005498 polishing Methods 0.000 title abstract 10
- 229910052802 copper Inorganic materials 0.000 claims abstract description 69
- 239000010949 copper Substances 0.000 claims abstract description 69
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 20
- 238000002955 isolation Methods 0.000 claims description 19
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- 239000000463 material Substances 0.000 claims description 15
- FYFFGSSZFBZTAH-UHFFFAOYSA-N methylaminomethanetriol Chemical compound CNC(O)(O)O FYFFGSSZFBZTAH-UHFFFAOYSA-N 0.000 claims description 13
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- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
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- 239000002184 metal Substances 0.000 abstract description 14
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- 230000015572 biosynthetic process Effects 0.000 description 2
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- 230000000052 comparative effect Effects 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
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- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- 229910000873 Beta-alumina solid electrolyte Inorganic materials 0.000 description 1
- KWIUHFFTVRNATP-UHFFFAOYSA-N Betaine Natural products C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 1
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- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical class C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
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- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 description 1
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- 230000002378 acidificating effect Effects 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001339 alkali metal compounds Chemical class 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 150000004996 alkyl benzenes Chemical class 0.000 description 1
- 150000008051 alkyl sulfates Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
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- BOZZLSTZCUGZHL-UHFFFAOYSA-L copper;2-aminobenzoate Chemical compound [Cu+2].NC1=CC=CC=C1C([O-])=O.NC1=CC=CC=C1C([O-])=O BOZZLSTZCUGZHL-UHFFFAOYSA-L 0.000 description 1
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- 150000001261 hydroxy acids Chemical class 0.000 description 1
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- 239000012535 impurity Substances 0.000 description 1
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- PDKHNCYLMVRIFV-UHFFFAOYSA-H molybdenum;hexachloride Chemical compound [Cl-].[Cl-].[Cl-].[Cl-].[Cl-].[Cl-].[Mo] PDKHNCYLMVRIFV-UHFFFAOYSA-H 0.000 description 1
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- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Disintegrating Or Milling (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002279193 | 2002-09-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200409808A true TW200409808A (en) | 2004-06-16 |
| TWI294456B TWI294456B (enExample) | 2008-03-11 |
Family
ID=32040447
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092126509A TW200409808A (en) | 2002-09-25 | 2003-09-25 | Polishing compound composition, method for producing same and polishing method |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US20050194565A1 (enExample) |
| EP (1) | EP1544901B1 (enExample) |
| JP (1) | JPWO2004030062A1 (enExample) |
| KR (1) | KR20050057209A (enExample) |
| CN (1) | CN1682354B (enExample) |
| AT (1) | ATE452422T1 (enExample) |
| AU (1) | AU2003266619A1 (enExample) |
| DE (1) | DE60330578D1 (enExample) |
| TW (1) | TW200409808A (enExample) |
| WO (1) | WO2004030062A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI462999B (zh) * | 2006-07-24 | 2014-12-01 | Cabot Microelectronics Corp | 用於介電薄膜之促進速率之化學機械拋光（ｃｍｐ）組合物 |
| CN116904119A (zh) * | 2022-04-13 | 2023-10-20 | Sk恩普士有限公司 | 半导体工艺用组合物和基板的抛光方法 |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4759219B2 (ja) * | 2003-11-25 | 2011-08-31 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US20060214133A1 (en) * | 2005-03-17 | 2006-09-28 | Fuji Photo Film Co., Ltd. | Metal polishing solution and polishing method |
| EP1879223A4 (en) * | 2005-05-06 | 2009-07-22 | Asahi Glass Co Ltd | COMPOSITION FOR POLISHING A COPPER WIRING AND METHOD FOR POLISHING THE SURFACE OF AN INTEGRATED SEMICONDUCTOR CIRCUIT |
| US7955519B2 (en) * | 2005-09-30 | 2011-06-07 | Cabot Microelectronics Corporation | Composition and method for planarizing surfaces |
| EP1984467B1 (en) * | 2006-02-03 | 2012-03-21 | Freescale Semiconductor, Inc. | Barrier slurry compositions and barrier cmp methods |
| KR20120002624A (ko) * | 2006-07-05 | 2012-01-06 | 히다치 가세고교 가부시끼가이샤 | Ｃｍｐ용 연마액 및 연마방법 |
| JP2008091569A (ja) * | 2006-09-29 | 2008-04-17 | Fujifilm Corp | 研磨用組成物及び研磨方法 |
| CN102528638A (zh) * | 2010-12-29 | 2012-07-04 | 中芯国际集成电路制造(上海)有限公司 | 一种铜化学机械研磨方法及设备 |
| WO2012165376A1 (ja) * | 2011-06-03 | 2012-12-06 | 旭硝子株式会社 | 研磨剤および研磨方法 |
| JP5971246B2 (ja) * | 2011-07-04 | 2016-08-17 | 三菱瓦斯化学株式会社 | 銅または銅を主成分とする化合物のエッチング液 |
| US20160086819A1 (en) * | 2013-04-25 | 2016-03-24 | Hitachi Chemical Company, Ltd. | Cmp polishing solution and polishing method using same |
| CN103484866B (zh) * | 2013-09-23 | 2016-05-18 | 无锡阳工机械制造有限公司 | 一种抛光防腐浆料 |
| CN103484865B (zh) * | 2013-09-23 | 2016-04-13 | 无锡阳工机械制造有限公司 | 一种金属抛光防腐浆料 |
| US9281210B2 (en) | 2013-10-10 | 2016-03-08 | Cabot Microelectronics Corporation | Wet-process ceria compositions for polishing substrates, and methods related thereto |
| EP3227098B1 (en) * | 2014-12-05 | 2022-06-15 | 3M Innovative Properties Company | Abrasive composition |
| US10685935B2 (en) * | 2017-11-15 | 2020-06-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Forming metal bonds with recesses |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6190237B1 (en) * | 1997-11-06 | 2001-02-20 | International Business Machines Corporation | pH-buffered slurry and use thereof for polishing |
| US6063306A (en) * | 1998-06-26 | 2000-05-16 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrate |
| JP2001023940A (ja) * | 1999-07-09 | 2001-01-26 | Seimi Chem Co Ltd | 半導体集積回路の平坦化方法及びそのための化学的機械研磨スラリ |
| JP4156137B2 (ja) * | 1999-07-19 | 2008-09-24 | 株式会社トクヤマ | 金属膜用研磨剤 |
| JP4683681B2 (ja) * | 1999-10-29 | 2011-05-18 | 日立化成工業株式会社 | 金属用研磨液及びそれを用いた基板の研磨方法 |
| TWI268286B (en) * | 2000-04-28 | 2006-12-11 | Kao Corp | Roll-off reducing agent |
| JP4195212B2 (ja) * | 2000-10-23 | 2008-12-10 | 花王株式会社 | 研磨液組成物 |
| US6740589B2 (en) * | 2000-11-30 | 2004-05-25 | Showa Denko Kabushiki Kaisha | Composition for polishing semiconductor wafer, semiconductor circuit wafer, and method for producing the same |
| JP2002170790A (ja) * | 2000-11-30 | 2002-06-14 | Showa Denko Kk | 半導体基板研磨用組成物、半導体配線基板およびその製造方法 |
| US6612911B2 (en) * | 2001-01-16 | 2003-09-02 | Cabot Microelectronics Corporation | Alkali metal-containing polishing system and method |
| JP2002270546A (ja) * | 2001-03-07 | 2002-09-20 | Hitachi Chem Co Ltd | 導体用研磨液及びこれを用いた研磨方法 |
| US20030104770A1 (en) * | 2001-04-30 | 2003-06-05 | Arch Specialty Chemicals, Inc. | Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers |
| CN1306562C (zh) * | 2001-10-26 | 2007-03-21 | 旭硝子株式会社 | 研磨剂、研磨剂的制造方法以及研磨方法 |
-
2003
- 2003-09-25 DE DE60330578T patent/DE60330578D1/de not_active Expired - Lifetime
- 2003-09-25 WO PCT/JP2003/012258 patent/WO2004030062A1/ja not_active Ceased
- 2003-09-25 AT AT03798500T patent/ATE452422T1/de not_active IP Right Cessation
- 2003-09-25 EP EP03798500A patent/EP1544901B1/en not_active Expired - Lifetime
- 2003-09-25 CN CN038224232A patent/CN1682354B/zh not_active Expired - Fee Related
- 2003-09-25 AU AU2003266619A patent/AU2003266619A1/en not_active Abandoned
- 2003-09-25 KR KR1020057003822A patent/KR20050057209A/ko not_active Ceased
- 2003-09-25 TW TW092126509A patent/TW200409808A/zh not_active IP Right Cessation
- 2003-09-25 JP JP2004539536A patent/JPWO2004030062A1/ja not_active Withdrawn
-
2005
- 2005-03-25 US US11/088,788 patent/US20050194565A1/en not_active Abandoned
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI462999B (zh) * | 2006-07-24 | 2014-12-01 | Cabot Microelectronics Corp | 用於介電薄膜之促進速率之化學機械拋光（ｃｍｐ）組合物 |
| CN116904119A (zh) * | 2022-04-13 | 2023-10-20 | Sk恩普士有限公司 | 半导体工艺用组合物和基板的抛光方法 |
| US12441911B2 (en) | 2022-04-13 | 2025-10-14 | Sk Enpulse Co., Ltd. | Composition for semiconductor processing and polishing method of semiconductor device using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1682354A (zh) | 2005-10-12 |
| KR20050057209A (ko) | 2005-06-16 |
| EP1544901A1 (en) | 2005-06-22 |
| EP1544901A4 (en) | 2007-04-11 |
| TWI294456B (enExample) | 2008-03-11 |
| AU2003266619A1 (en) | 2004-04-19 |
| ATE452422T1 (de) | 2010-01-15 |
| EP1544901B1 (en) | 2009-12-16 |
| WO2004030062A1 (ja) | 2004-04-08 |
| US20050194565A1 (en) | 2005-09-08 |
| DE60330578D1 (de) | 2010-01-28 |
| JPWO2004030062A1 (ja) | 2006-01-26 |
| AU2003266619A8 (en) | 2004-04-19 |
| CN1682354B (zh) | 2010-10-06 |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |