ATE452422T1 - Poliermittelzusammensetzung und polierverfahren - Google Patents

Poliermittelzusammensetzung und polierverfahren

Info

Publication number
ATE452422T1
ATE452422T1 AT03798500T AT03798500T ATE452422T1 AT E452422 T1 ATE452422 T1 AT E452422T1 AT 03798500 T AT03798500 T AT 03798500T AT 03798500 T AT03798500 T AT 03798500T AT E452422 T1 ATE452422 T1 AT E452422T1
Authority
AT
Austria
Prior art keywords
polishing
compound
circuit board
integrated circuit
semiconductor integrated
Prior art date
Application number
AT03798500T
Other languages
German (de)
English (en)
Inventor
Hiroyuki Kamiya
Katsuyuki Tsugita
Original Assignee
Seimi Chem Kk
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seimi Chem Kk, Asahi Glass Co Ltd filed Critical Seimi Chem Kk
Application granted granted Critical
Publication of ATE452422T1 publication Critical patent/ATE452422T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Disintegrating Or Milling (AREA)
AT03798500T 2002-09-25 2003-09-25 Poliermittelzusammensetzung und polierverfahren ATE452422T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002279193 2002-09-25
PCT/JP2003/012258 WO2004030062A1 (ja) 2002-09-25 2003-09-25 研磨剤組成物、その製造方法及び研磨方法

Publications (1)

Publication Number Publication Date
ATE452422T1 true ATE452422T1 (de) 2010-01-15

Family

ID=32040447

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03798500T ATE452422T1 (de) 2002-09-25 2003-09-25 Poliermittelzusammensetzung und polierverfahren

Country Status (10)

Country Link
US (1) US20050194565A1 (enExample)
EP (1) EP1544901B1 (enExample)
JP (1) JPWO2004030062A1 (enExample)
KR (1) KR20050057209A (enExample)
CN (1) CN1682354B (enExample)
AT (1) ATE452422T1 (enExample)
AU (1) AU2003266619A1 (enExample)
DE (1) DE60330578D1 (enExample)
TW (1) TW200409808A (enExample)
WO (1) WO2004030062A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4759219B2 (ja) * 2003-11-25 2011-08-31 株式会社フジミインコーポレーテッド 研磨用組成物
US20060214133A1 (en) * 2005-03-17 2006-09-28 Fuji Photo Film Co., Ltd. Metal polishing solution and polishing method
EP1879223A4 (en) * 2005-05-06 2009-07-22 Asahi Glass Co Ltd COMPOSITION FOR POLISHING A COPPER WIRING AND METHOD FOR POLISHING THE SURFACE OF AN INTEGRATED SEMICONDUCTOR CIRCUIT
US7955519B2 (en) * 2005-09-30 2011-06-07 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
EP1984467B1 (en) * 2006-02-03 2012-03-21 Freescale Semiconductor, Inc. Barrier slurry compositions and barrier cmp methods
KR20120002624A (ko) * 2006-07-05 2012-01-06 히다치 가세고교 가부시끼가이샤 Ｃｍｐ용 연마액 및 연마방법
US20080020680A1 (en) * 2006-07-24 2008-01-24 Cabot Microelectronics Corporation Rate-enhanced CMP compositions for dielectric films
JP2008091569A (ja) * 2006-09-29 2008-04-17 Fujifilm Corp 研磨用組成物及び研磨方法
CN102528638A (zh) * 2010-12-29 2012-07-04 中芯国际集成电路制造(上海)有限公司 一种铜化学机械研磨方法及设备
WO2012165376A1 (ja) * 2011-06-03 2012-12-06 旭硝子株式会社 研磨剤および研磨方法
JP5971246B2 (ja) * 2011-07-04 2016-08-17 三菱瓦斯化学株式会社 銅または銅を主成分とする化合物のエッチング液
US20160086819A1 (en) * 2013-04-25 2016-03-24 Hitachi Chemical Company, Ltd. Cmp polishing solution and polishing method using same
CN103484866B (zh) * 2013-09-23 2016-05-18 无锡阳工机械制造有限公司 一种抛光防腐浆料
CN103484865B (zh) * 2013-09-23 2016-04-13 无锡阳工机械制造有限公司 一种金属抛光防腐浆料
US9281210B2 (en) 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
EP3227098B1 (en) * 2014-12-05 2022-06-15 3M Innovative Properties Company Abrasive composition
US10685935B2 (en) * 2017-11-15 2020-06-16 Taiwan Semiconductor Manufacturing Company, Ltd. Forming metal bonds with recesses
KR102773634B1 (ko) 2022-04-13 2025-02-25 에스케이엔펄스 주식회사 반도체 공정용 조성물 및 이를 이용한 반도체 소자의 연마방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6190237B1 (en) * 1997-11-06 2001-02-20 International Business Machines Corporation pH-buffered slurry and use thereof for polishing
US6063306A (en) * 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
JP2001023940A (ja) * 1999-07-09 2001-01-26 Seimi Chem Co Ltd 半導体集積回路の平坦化方法及びそのための化学的機械研磨スラリ
JP4156137B2 (ja) * 1999-07-19 2008-09-24 株式会社トクヤマ 金属膜用研磨剤
JP4683681B2 (ja) * 1999-10-29 2011-05-18 日立化成工業株式会社 金属用研磨液及びそれを用いた基板の研磨方法
TWI268286B (en) * 2000-04-28 2006-12-11 Kao Corp Roll-off reducing agent
JP4195212B2 (ja) * 2000-10-23 2008-12-10 花王株式会社 研磨液組成物
US6740589B2 (en) * 2000-11-30 2004-05-25 Showa Denko Kabushiki Kaisha Composition for polishing semiconductor wafer, semiconductor circuit wafer, and method for producing the same
JP2002170790A (ja) * 2000-11-30 2002-06-14 Showa Denko Kk 半導体基板研磨用組成物、半導体配線基板およびその製造方法
US6612911B2 (en) * 2001-01-16 2003-09-02 Cabot Microelectronics Corporation Alkali metal-containing polishing system and method
JP2002270546A (ja) * 2001-03-07 2002-09-20 Hitachi Chem Co Ltd 導体用研磨液及びこれを用いた研磨方法
US20030104770A1 (en) * 2001-04-30 2003-06-05 Arch Specialty Chemicals, Inc. Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
CN1306562C (zh) * 2001-10-26 2007-03-21 旭硝子株式会社 研磨剂、研磨剂的制造方法以及研磨方法

Also Published As

Publication number Publication date
CN1682354A (zh) 2005-10-12
KR20050057209A (ko) 2005-06-16
EP1544901A1 (en) 2005-06-22
EP1544901A4 (en) 2007-04-11
TWI294456B (enExample) 2008-03-11
AU2003266619A1 (en) 2004-04-19
TW200409808A (en) 2004-06-16
EP1544901B1 (en) 2009-12-16
WO2004030062A1 (ja) 2004-04-08
US20050194565A1 (en) 2005-09-08
DE60330578D1 (de) 2010-01-28
JPWO2004030062A1 (ja) 2006-01-26
AU2003266619A8 (en) 2004-04-19
CN1682354B (zh) 2010-10-06

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