KR20050057209A - 연마제 조성물, 그 제조 방법 및 연마 방법 - Google Patents

연마제 조성물, 그 제조 방법 및 연마 방법 Download PDF

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Publication number
KR20050057209A
KR20050057209A KR1020057003822A KR20057003822A KR20050057209A KR 20050057209 A KR20050057209 A KR 20050057209A KR 1020057003822 A KR1020057003822 A KR 1020057003822A KR 20057003822 A KR20057003822 A KR 20057003822A KR 20050057209 A KR20050057209 A KR 20050057209A
Authority
KR
South Korea
Prior art keywords
polishing
abrasive
copper
integrated circuit
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020057003822A
Other languages
English (en)
Korean (ko)
Inventor
히로유키 가미야
가츠유키 츠기타
Original Assignee
세이미 케미칼 가부시끼가이샤
아사히 가라스 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 세이미 케미칼 가부시끼가이샤, 아사히 가라스 가부시키가이샤 filed Critical 세이미 케미칼 가부시끼가이샤
Publication of KR20050057209A publication Critical patent/KR20050057209A/ko
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Disintegrating Or Milling (AREA)
KR1020057003822A 2002-09-25 2003-09-25 연마제 조성물, 그 제조 방법 및 연마 방법 Ceased KR20050057209A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00279193 2002-09-25
JP2002279193 2002-09-25

Publications (1)

Publication Number Publication Date
KR20050057209A true KR20050057209A (ko) 2005-06-16

Family

ID=32040447

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057003822A Ceased KR20050057209A (ko) 2002-09-25 2003-09-25 연마제 조성물, 그 제조 방법 및 연마 방법

Country Status (10)

Country Link
US (1) US20050194565A1 (enExample)
EP (1) EP1544901B1 (enExample)
JP (1) JPWO2004030062A1 (enExample)
KR (1) KR20050057209A (enExample)
CN (1) CN1682354B (enExample)
AT (1) ATE452422T1 (enExample)
AU (1) AU2003266619A1 (enExample)
DE (1) DE60330578D1 (enExample)
TW (1) TW200409808A (enExample)
WO (1) WO2004030062A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4759219B2 (ja) * 2003-11-25 2011-08-31 株式会社フジミインコーポレーテッド 研磨用組成物
US20060214133A1 (en) * 2005-03-17 2006-09-28 Fuji Photo Film Co., Ltd. Metal polishing solution and polishing method
WO2006120727A1 (ja) * 2005-05-06 2006-11-16 Asahi Glass Company, Limited 銅配線研磨用組成物および半導体集積回路表面の研磨方法
US7955519B2 (en) * 2005-09-30 2011-06-07 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
US20090209103A1 (en) * 2006-02-03 2009-08-20 Freescale Semiconductor, Inc. Barrier slurry compositions and barrier cmp methods
KR20090018201A (ko) * 2006-07-05 2009-02-19 히다치 가세고교 가부시끼가이샤 Ｃｍｐ용 연마액 및 연마방법
US20080020680A1 (en) * 2006-07-24 2008-01-24 Cabot Microelectronics Corporation Rate-enhanced CMP compositions for dielectric films
JP2008091569A (ja) * 2006-09-29 2008-04-17 Fujifilm Corp 研磨用組成物及び研磨方法
CN102528638A (zh) * 2010-12-29 2012-07-04 中芯国际集成电路制造(上海)有限公司 一种铜化学机械研磨方法及设备
DE112012002344T5 (de) * 2011-06-03 2014-02-27 Asahi Glass Co., Ltd. Poliermittel und Polierverfahren
US9644274B2 (en) * 2011-07-04 2017-05-09 Mitsubishi Gas Chemical Company, Inc. Etching solution for copper or a compound comprised mainly of copper
JPWO2014175397A1 (ja) * 2013-04-25 2017-02-23 日立化成株式会社 Ｃｍｐ用研磨液及びこれを用いた研磨方法
CN103484865B (zh) * 2013-09-23 2016-04-13 无锡阳工机械制造有限公司 一种金属抛光防腐浆料
CN103484866B (zh) * 2013-09-23 2016-05-18 无锡阳工机械制造有限公司 一种抛光防腐浆料
US9281210B2 (en) 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
US10179870B2 (en) * 2014-12-05 2019-01-15 3M Innovative Properties Company Abrasive composition
US10685935B2 (en) * 2017-11-15 2020-06-16 Taiwan Semiconductor Manufacturing Company, Ltd. Forming metal bonds with recesses
KR102773634B1 (ko) 2022-04-13 2025-02-25 에스케이엔펄스 주식회사 반도체 공정용 조성물 및 이를 이용한 반도체 소자의 연마방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6190237B1 (en) * 1997-11-06 2001-02-20 International Business Machines Corporation pH-buffered slurry and use thereof for polishing
US6063306A (en) * 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
JP2001023940A (ja) * 1999-07-09 2001-01-26 Seimi Chem Co Ltd 半導体集積回路の平坦化方法及びそのための化学的機械研磨スラリ
JP4156137B2 (ja) * 1999-07-19 2008-09-24 株式会社トクヤマ 金属膜用研磨剤
JP4683681B2 (ja) * 1999-10-29 2011-05-18 日立化成工業株式会社 金属用研磨液及びそれを用いた基板の研磨方法
TWI268286B (en) * 2000-04-28 2006-12-11 Kao Corp Roll-off reducing agent
JP4195212B2 (ja) * 2000-10-23 2008-12-10 花王株式会社 研磨液組成物
JP2002170790A (ja) * 2000-11-30 2002-06-14 Showa Denko Kk 半導体基板研磨用組成物、半導体配線基板およびその製造方法
US6740589B2 (en) * 2000-11-30 2004-05-25 Showa Denko Kabushiki Kaisha Composition for polishing semiconductor wafer, semiconductor circuit wafer, and method for producing the same
US6612911B2 (en) * 2001-01-16 2003-09-02 Cabot Microelectronics Corporation Alkali metal-containing polishing system and method
JP2002270546A (ja) * 2001-03-07 2002-09-20 Hitachi Chem Co Ltd 導体用研磨液及びこれを用いた研磨方法
US20030104770A1 (en) * 2001-04-30 2003-06-05 Arch Specialty Chemicals, Inc. Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
EP1445796B1 (en) * 2001-10-26 2008-02-20 Asahi Glass Company Ltd. Polishing compound, method for production thereof and polishing method

Also Published As

Publication number Publication date
EP1544901B1 (en) 2009-12-16
US20050194565A1 (en) 2005-09-08
ATE452422T1 (de) 2010-01-15
AU2003266619A1 (en) 2004-04-19
EP1544901A1 (en) 2005-06-22
AU2003266619A8 (en) 2004-04-19
CN1682354A (zh) 2005-10-12
JPWO2004030062A1 (ja) 2006-01-26
TW200409808A (en) 2004-06-16
WO2004030062A1 (ja) 2004-04-08
DE60330578D1 (de) 2010-01-28
TWI294456B (enExample) 2008-03-11
EP1544901A4 (en) 2007-04-11
CN1682354B (zh) 2010-10-06

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