TWI353649B - - Google Patents
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- Publication number
- TWI353649B TWI353649B TW097100472A TW97100472A TWI353649B TW I353649 B TWI353649 B TW I353649B TW 097100472 A TW097100472 A TW 097100472A TW 97100472 A TW97100472 A TW 97100472A TW I353649 B TWI353649 B TW I353649B
- Authority
- TW
- Taiwan
- Prior art keywords
- conductive layer
- substrate
- film
- substrate processing
- processing apparatus
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 180
- 239000010408 film Substances 0.000 claims description 116
- 239000007789 gas Substances 0.000 claims description 47
- 239000011521 glass Substances 0.000 claims description 31
- 239000010409 thin film Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 20
- 239000012495 reaction gas Substances 0.000 claims description 19
- 239000012780 transparent material Substances 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 17
- 238000003672 processing method Methods 0.000 claims description 16
- 230000007246 mechanism Effects 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 229910052732 germanium Inorganic materials 0.000 claims description 10
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 7
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 239000004575 stone Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 230000000694 effects Effects 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 230000003749 cleanliness Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 241001494479 Pecora Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- -1 button (Ta) Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007008306A JP4361568B2 (ja) | 2007-01-17 | 2007-01-17 | 基板処理装置および基板処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200849455A TW200849455A (en) | 2008-12-16 |
TWI353649B true TWI353649B (ko) | 2011-12-01 |
Family
ID=39704110
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW097100472A TW200849455A (en) | 2007-01-17 | 2008-01-04 | Apparatus and method for processing substrate |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4361568B2 (ko) |
KR (1) | KR100967923B1 (ko) |
CN (1) | CN101226877B (ko) |
TW (1) | TW200849455A (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100988667B1 (ko) | 2009-01-23 | 2010-10-18 | 장석호 | 발전 효율과 회전력 향상이 이루어진 발전장치 |
EP2540863A4 (en) * | 2010-02-23 | 2014-07-30 | Teoss Co Ltd | CVD PROCESSING METHOD AND CVD DEVICE USING THE METHOD |
JP5902073B2 (ja) * | 2012-09-25 | 2016-04-13 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法及び基板処理装置 |
CN107217240A (zh) * | 2017-07-11 | 2017-09-29 | 江苏星特亮科技有限公司 | 一种石墨烯薄膜的制备方法 |
CN109402575A (zh) * | 2018-12-27 | 2019-03-01 | 北京铂阳顶荣光伏科技有限公司 | 基座以及蒸镀设备 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05235391A (ja) * | 1991-03-07 | 1993-09-10 | Mitsubishi Electric Corp | 薄膜太陽電池及びその製造方法並びに半導体装置の製造方法 |
JPH1126470A (ja) * | 1997-07-08 | 1999-01-29 | Sony Corp | 半導体基板、半導体装置および太陽電池、半導体基板の製造方法および薄膜半導体の製造方法、半導体基板に対する処理装置 |
JP4433858B2 (ja) * | 2004-03-31 | 2010-03-17 | パナソニック電工株式会社 | 電子源装置 |
-
2007
- 2007-01-17 JP JP2007008306A patent/JP4361568B2/ja not_active Expired - Fee Related
-
2008
- 2008-01-04 TW TW097100472A patent/TW200849455A/zh not_active IP Right Cessation
- 2008-01-11 KR KR1020080003358A patent/KR100967923B1/ko not_active IP Right Cessation
- 2008-01-17 CN CN2008100023991A patent/CN101226877B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP4361568B2 (ja) | 2009-11-11 |
TW200849455A (en) | 2008-12-16 |
KR100967923B1 (ko) | 2010-07-06 |
CN101226877B (zh) | 2010-12-01 |
KR20080067965A (ko) | 2008-07-22 |
JP2008177289A (ja) | 2008-07-31 |
CN101226877A (zh) | 2008-07-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |