TWI373817B - Susceptor structure in large area substrate processing system - Google Patents

Susceptor structure in large area substrate processing system Download PDF

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Publication number
TWI373817B
TWI373817B TW097106814A TW97106814A TWI373817B TW I373817 B TWI373817 B TW I373817B TW 097106814 A TW097106814 A TW 097106814A TW 97106814 A TW97106814 A TW 97106814A TW I373817 B TWI373817 B TW I373817B
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Taiwan
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heater
base
susceptor
susceptor structure
pedestal
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TW097106814A
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Chinese (zh)
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TW200839926A (en
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Taek-Yong Jang
Byung-Il Lee
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Tera Semicon Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • B65G49/062—Easels, stands or shelves, e.g. castor-shelves, supporting means on vehicles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6734—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders specially adapted for supporting large square shaped substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

1373817 九、發明說明： 【發明所屬之技術領域3 技術領域 本發明係有關於設置於大面積基板處理系統内之基座 5 構造物，特別是，本發明係有關於設置於製程室内部的基 座構造物，該製程室係於玻璃基板上蒸鍍特定物質，且對 蒸鍍後之特定物質進行熱處理以製作平面顯示器者。 【先前技術3 背景技術 10 最近對於平板顯示器的需求不僅是爆發性的增加，而 且偏好大畫面顯示器的傾向是越來越大。因此，對用於平 板顯示器製造的大面積基板處理系統的注目日益高漲。 可薄形化、輕量化及低耗電力化之平板顯示器種類包 括LCD(液晶顯示器）、PDP(電漿顯示面板）、OLED(有機發 15 光顯示器）等等。 平板顯示器製造時所使用之大面積基板處理系統可大 致區分為蒸鍍裝置及熱處理裝置。 蒸鍍裝置係作為負責形成平板顯示器的核心構造之透 明傳導層、絕緣層、金屬層或矽層的形成階段之裝置，包 20 括LPCVD(低壓化學蒸鍍）、PECVD(電漿強化之化學蒸鍍） 等之化學蒸鍍裝置，及濺鍍等之物理蒸鍍裝置。又，熱處 理裝置係蒸鍍製程後負責隨後的退火階段之裝置。 例如，關於LCD方面，代表性的蒸鍍裝置有薄膜電晶 體(TFT)的非晶質矽蒸鍍裝置，而代表性的熱處理裝置有將 5 前述非晶質矽製成為多晶矽的裝置。 為進行如此之蒸鍍及熱處理製程，玻璃基板必需加熱 至適當的溫度。因此，通常在製程室内設置有載置玻璃基 板的基座構造物，此種基座構造物内設有作為發熱體的加 熱器，且構成為可加熱裝設有載置於基座上之複數玻璃基 板的晶舟(boat)。換言之，基座構造物具有在製程室内支持 且加熱玻璃基板的作用。 第1圖係顯示習知基座構造物之構造的戴面圖。 如第1圖所示，大面積基板處理系統之製程室1的内側 下部設有板狀的加熱器2，而加熱器2上部設有基座3。基座 3之上部載置裝設有複數玻璃基板之晶舟（未顯示）。一旦晶 舟載置於基座上，便使加熱器2運作而一邊加熱玻璃基板一 邊進行蒸鍍或熱處理製程。 但，第1圖所示之習知基座構造物有以下的問題。 首先，加熱器產生的熱係經由基座而傳導至玻璃基 板’然由於-部份的熱會由加熱器側面排出而造成浪費， 而有加熱器之熱效率低下的問題點。 又，有加熱器運作中發生的微細粉塵經由加孰器側面 擴散到玻祕板的_點。於該及熱處理_中，若是 由加熱器所排放出的微細粉塵落於玻璃基板上，則平板顯 不器的特性有大幅降低之虞。 再者’由於基座係由―個單一板所構成’故在裝設於 2構造物内的加熱器不運作的情況下，有加熱器替換不 合易的問題點。 1373817 【發明内容】 發明欲解決之課題 為解決前述問題點所作成之本發明之目的為提供一種 藉由採用完全包覆加熱器上面部及側面部之前導基座及引 5 導基座的構成方式，提高熱效率且阻斷微細粉塵的擴散、 加熱器替換容易之設置於大面積基板處理系統内的基座構 造。 解決課題之手段 為了達成前述目的，本發明之設置於大面積基板處理 10 系統内之基座構造物之特徵在於包含：提供用以加熱基板 之熱源的加熱器；覆蓋於前述加熱器之上部且載置前述基 板之前導基座；及圍繞前述加熱器之側面的引導基座。 於此，前述引導基座由可各自分離之三個部份所構 成，且前述三個部份係一個中央部份及兩個側部份，而前 15 述兩個側部份係相互對稱之構造且配置於前述中央部份之 兩側。 前述中央部份之下部可形成有與前述引導基座結合的 突起。 前述引導基座可包含：一對可各自分離之本體，係相 20 互對稱之構造且對向配置，並且其各自之端部密合者；及 支持棒，係連結且支持前述本體之兩端者。 前述本體之兩端上部可形成有凹溝，以與前述前導基 座結合。 前述前導基座及前述引導基座係可由石英、陶竟或石 7 墨製成。 發明的效果 本發明之基座構造物採用完全包覆加熱器上面部及4 個側面部之前導基座及引導基座的構成方式，因此具有加 熱器的熱效率高且阻斷微細粉邊—的-擴散、加熱器替換容易 之效果。TECHNICAL FIELD The present invention relates to a pedestal 5 structure disposed in a large-area substrate processing system, and more particularly, the present invention relates to a base disposed inside a process chamber. A seat structure is obtained by depositing a specific substance on a glass substrate and heat-treating a specific substance after vapor deposition to produce a flat display. [Prior Art 3] Background Recently, the demand for flat panel displays has not only been an explosive increase, but also a tendency to favor large screen displays. Therefore, attention has been paid to a large-area substrate processing system for flat panel display manufacturing. The types of flat panel displays that can be thinned, lightweight, and low in power consumption include LCDs (liquid crystal displays), PDPs (plasma display panels), OLEDs (organic hair-emitting displays), and the like. The large-area substrate processing system used in the manufacture of flat panel displays can be roughly classified into a vapor deposition device and a heat treatment device. The vapor deposition device is a device for forming a transparent conductive layer, an insulating layer, a metal layer or a germanium layer of a core structure of a flat panel display, and includes a LPCVD (low pressure chemical vapor deposition), PECVD (plasma enhanced chemical vaporization). A chemical vapor deposition device such as plating or plating, and a physical vapor deposition device such as sputtering. Further, the heat treatment device is a device responsible for the subsequent annealing stage after the vapor deposition process. For example, regarding the LCD, a typical vapor deposition device has a thin film transistor (TFT) amorphous germanium vapor deposition device, and a representative heat treatment device has a device in which the amorphous germanium is made of polycrystalline germanium. For such evaporation and heat treatment processes, the glass substrate must be heated to an appropriate temperature. Therefore, generally, a susceptor structure on which a glass substrate is placed is provided in a process chamber, and a heater as a heat generating body is provided in the susceptor structure, and is configured to be heatably mounted on a plurality of substrates mounted on the susceptor A boat for a glass substrate. In other words, the pedestal structure has the function of supporting and heating the glass substrate in the process chamber. Fig. 1 is a front view showing the construction of a conventional pedestal structure. As shown in Fig. 1, a plate-shaped heater 2 is provided on the inner lower portion of the process chamber 1 of the large-area substrate processing system, and a susceptor 3 is provided on the upper portion of the heater 2. A wafer boat (not shown) on which a plurality of glass substrates are mounted is placed on the upper portion of the susceptor 3. Once the wafer is placed on the susceptor, the heater 2 is operated to perform a vapor deposition or heat treatment process while heating the glass substrate. However, the conventional pedestal structure shown in Fig. 1 has the following problems. First, the heat generated by the heater is conducted to the glass substrate via the susceptor. However, since part of the heat is discharged from the side of the heater, waste is caused, and there is a problem that the thermal efficiency of the heater is low. Further, fine dust generated during the operation of the heater is diffused to the point of the glass plate through the side of the twister. In the heat treatment, if the fine dust discharged from the heater falls on the glass substrate, the characteristics of the flat panel display are greatly reduced. Further, since the pedestal is composed of "a single plate", when the heater installed in the 2 structure does not operate, there is a problem that the heater replacement is not easy. SUMMARY OF THE INVENTION Problems to be Solved by the Invention The object of the present invention to solve the above problems is to provide a structure in which a front pedestal and a lead pedestal are completely covered by a face and a side portion of a heater. In this way, the susceptor structure provided in the large-area substrate processing system is improved in thermal efficiency and which prevents the diffusion of fine dust and replaces the heater. Means for Solving the Problems In order to achieve the above object, a susceptor structure provided in a system of a large-area substrate processing 10 of the present invention is characterized by comprising: a heater for supplying a heat source for heating the substrate; covering the upper portion of the heater and a guiding base before placing the substrate; and a guiding base surrounding a side surface of the heater. Here, the guiding base is composed of three parts which can be separated from each other, and the three parts are a central part and two side parts, and the two side parts of the first 15 are symmetrical to each other. Constructed and arranged on both sides of the aforementioned central portion. The lower portion of the central portion may be formed with a projection that is coupled to the aforementioned guide base. The guiding base may include: a pair of bodies that can be separated from each other, the phases 20 are mutually symmetrical and arranged oppositely, and the respective ends thereof are in close contact; and the supporting rods are connected and support the two ends of the body By. A groove may be formed in an upper portion of both ends of the body to be coupled to the foregoing leading base. The leading base and the guiding base may be made of quartz, ceramic or stone. Advantageous Effects of Invention The susceptor structure of the present invention has a configuration in which the upper surface of the heater and the front side pedestal and the guide pedestal of the four side portions are completely covered, so that the heater has high thermal efficiency and blocks fine powder edges. - The effect of diffusion and heater replacement is easy.

I：貧施方式;J 實施發明之最佳形態 以下，參照附加圖式來詳細說明本發明之構造。 第2圖係顯示本發明一實施形態之基座構造物之構造 的分解立體圖。 本發明的基座構造物之基本構造為：提供用以加熱基 板之熱源的加熱器100;由兩個本體所構成且圍繞加熱器 100之四個側面之引導基座200 ;及由三個部份所構成並覆 蓋加熱器100之上面部的前導基座3〇〇。引導基座3〇〇上載置 裝設有複數基板的晶舟(未顯示）。 如圖所示，加熱器100係以複數板狀發熱體層疊之構造 所形成者。 如前述般限制構成引導基座200之本體及構成前導基 座300之部份的數目是不必要的。例如，隨著大面積基板處 理系統之尺寸的增加，本體及部份之數目亦可增加。 引導基座200及前導基座3〇〇係以石英或陶瓷等耐熱性 優異之材質製造為佳。此乃為使基座不會因加熱器產生的 熱而發生變形。但，考量熱傳導性時，引導基座2〇〇及前導 基座300可用石墨製造。 第3圖係顯示構成引導基座200之相互對稱的二個部份 之中，一個部份220之構造的立體圖》 如圖所示，引導基座200係以形成「c：」之形態的一對 本體220所構成。即，將一對本體220以相互面對面的方式 對向配置之後’一旦結合該對本體220之各端部，即完成引 導基座200。 此時，以藉由一對本體220，使加熱器的四個側面完全 被圍繞為佳。 本體220設有連結該本體兩端的支持棒24〇。支持棒240 係設置於本體220之短邊部之内、最上部的附近，而不與加 熱器100接觸。 藉由結合一對本體220而完成引導基座2〇〇時，連結本 體220的支持棒240係相互平行。 第4A圖係顯示前導基座的中央部份32〇之構造的立體 圖，第4B圖係顯示前導基座的側部份38〇之構造的立體圖。 如圖所示，前導基座3〇〇係由具有長方形板狀的一個中 央部份320’及具有長方形板狀且形成相互對稱的二個側部 伤380所構成。二個側部份380係結合於中央部份mo的兩 側。 此時’前導基座300係以形成為可充份覆蓋加熱器1〇〇 上部之全體的尺寸為佳。 前導基座之中央部份32〇形成有用以與引導基座之本 體220結合之突起34〇，且突起34〇形成於中央部份32〇的下 部’並以形成於四個角點之附近為佳。 此時，為使引導基座200及前導基座300結合，引導基 座200之本體220之兩端的上部形成有嵌合突起340的凹溝 260(見第3圖）。 於此’凹溝260係以形成於接近本體220的短邊部與支 持棒240連結之區域的位置為佳。 因此，結合一對本體220而完成引導基座2〇〇後，使前 導基座300結合於引導基座2〇〇之時，形成於前導基座3〇〇之 下部的突起340嵌合於形成在引導基座2〇〇的凹溝26〇。此 時，在突起340嵌合於凹溝260的狀態下，支持棒240接觸前 導基座300的下部面，且支持前導基座3〇()。 產業上利用的可能性 如刖述，由完全圍繞加熱器上面部及四個側面部之複 數4伤所構成之方式的本發明之基座構造物，相較於以單 一部份構成僅覆蓋加熱器的上面部之習知方式，有下列優 點。 首先，異於習知方式，由於基座構造物完全圍繞加熱 器的上面部及四個側面部，故加熱器的熱完全使用於基板 之加熱，可提高加熱器的熱效率。同時，由於使加熱器產 生的微細粉塵的影響最小化，故平板顯4之特性可向上 提升。 又，異於習知方式，由於基座構造物係由複數之部份 所構成，故加熱器故障時可容易替換。 因此’本發明之產業利用性可謂極為優異。 ^另一方面，雖然本發明說明内藉由數個較佳實施形態 來記載’但制此技者應了解在不偏雜加申請專利範圍 所揭示之本發明之範疇及概念之情形下，可進行 換及修正。 ” 【闽式簡單說明】 第1圖係顯示習知基座構造物之構造的截面圖。 第2圖係顯示本發明之實施形態之基座構造物之構生 的分解立體圖。 ^ 第3圖係顯示引導基座的本體之構造的立體圖。 第4A圖係顯示前導基座中央部份之構造的立體圖。 第4B圖係顯示前導基座側部份之構造的立體圖。 【主要元件符號說明】 1..·製程室 240…支持棒 2···加熱器 260...凹溝 3…基座 300...前導基座 100...加熱器 320…中央部份 200...引導基座 340...突起 220…部份、本體 380…侧部份I: Mode of Poverty; J. BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the structure of the present invention will be described in detail with reference to additional drawings. Fig. 2 is an exploded perspective view showing the structure of a susceptor structure according to an embodiment of the present invention. The basic structure of the susceptor structure of the present invention is: a heater 100 for heating a heat source of the substrate; a guiding pedestal 200 composed of two bodies and surrounding four sides of the heater 100; and three portions The portion constitutes and covers the front guiding base 3 of the upper surface of the heater 100. A wafer boat (not shown) provided with a plurality of substrates is placed on the guide base 3 . As shown in the figure, the heater 100 is formed by a structure in which a plurality of plate-shaped heating elements are stacked. It is not necessary to limit the number of the bodies constituting the guide pedestal 200 and the portions constituting the front pedestal 300 as described above. For example, as the size of a large area substrate processing system increases, the number of bodies and portions can also increase. It is preferable that the guide base 200 and the lead guide base 3 are made of a material having excellent heat resistance such as quartz or ceramic. This is to prevent the base from being deformed by the heat generated by the heater. However, in consideration of thermal conductivity, the guiding base 2 and the leading base 300 may be made of graphite. Fig. 3 is a perspective view showing the structure of one portion 220 constituting the mutually symmetrical portions of the guide base 200. As shown in the figure, the guide base 200 is formed in a form of "c:". It is composed of the body 220. That is, after the pair of bodies 220 are opposed to each other in a face-to-face manner, the guiding base 200 is completed once the ends of the pair of the bodies 220 are joined. At this time, it is preferable to completely surround the four sides of the heater by the pair of bodies 220. The body 220 is provided with a support rod 24 连结 connecting the two ends of the body. The support rod 240 is disposed in the vicinity of the short side portion of the body 220 and in the vicinity of the uppermost portion without being in contact with the heater 100. When the guide base 2 is completed by joining the pair of bodies 220, the support bars 240 that connect the body 220 are parallel to each other. Fig. 4A is a perspective view showing the structure of the central portion 32 of the leading base, and Fig. 4B is a perspective view showing the configuration of the side portion 38 of the leading base. As shown, the leading base 3 is composed of a central portion 320' having a rectangular plate shape and two side portions 380 having a rectangular plate shape and symmetrical with each other. The two side portions 380 are coupled to both sides of the central portion mo. At this time, it is preferable that the leading base 300 is formed so as to cover the entire upper portion of the heater 1〇〇. The central portion 32〇 of the leading base forms a protrusion 34〇 for engaging with the body 220 of the guiding base, and the protrusion 34〇 is formed at the lower portion of the central portion 32〇 and is formed in the vicinity of the four corner points. good. At this time, in order to join the guide base 200 and the front guide base 300, the upper portion of both ends of the main body 220 of the guide base 200 is formed with a groove 260 for fitting the projection 340 (see Fig. 3). The groove 260 is preferably formed at a position close to a region where the short side portion of the main body 220 is coupled to the support rod 240. Therefore, when the guiding base 2 is completed in combination with the pair of bodies 220, and the leading base 300 is coupled to the guiding base 2, the protrusions 340 formed on the lower portion of the leading base 3 are fitted to each other. The groove 26 is guided in the base 2 of the guide base. At this time, in a state where the projection 340 is fitted into the recess 260, the support bar 240 contacts the lower surface of the front guide base 300 and supports the front guide base 3 (). The possibility of industrial use is as described above, and the susceptor structure of the present invention, which is composed of a plurality of four injuries completely surrounding the upper surface of the heater and the four side portions, is covered only by heating with a single portion. The conventional method of the upper face of the device has the following advantages. First, unlike the conventional method, since the susceptor structure completely surrounds the upper surface portion and the four side portions of the heater, the heat of the heater is completely used for heating the substrate, and the thermal efficiency of the heater can be improved. At the same time, since the influence of the fine dust generated by the heater is minimized, the characteristics of the flat panel 4 can be improved upward. Further, unlike the conventional method, since the pedestal structure is composed of a plurality of parts, the heater can be easily replaced in the event of a failure. Therefore, the industrial applicability of the present invention is extremely excellent. On the other hand, although the description of the present invention has been described in terms of several preferred embodiments, it should be understood that the scope and concept of the invention disclosed in the scope of the application can be Change and fix. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing the structure of a conventional pedestal structure. Fig. 2 is an exploded perspective view showing the structure of a susceptor structure according to an embodiment of the present invention. Fig. 4A is a perspective view showing the structure of the central portion of the leading base. Fig. 4B is a perspective view showing the structure of the side portion of the leading base. [Description of main components] 1. Process chamber 240... support rod 2... heater 260... groove 3... pedestal 300... front pedestal 100... heater 320... central portion 200... guide 340 ...protrusion 220...part, body 380...side part

Claims (1)

1373817 十、申請專利範圍： 1. 一種基座構造物，係設置於大面積基板處理系統内者， 其特徵在於該基座構造物包含： 加熱器，係提供用以熱基板之熱源考； 5 前導基座，係覆蓋於前述加熱器之上部，且載置前述基 板者；及 引導基座，係圍繞前述加熱器之側面者。 2. 如申請專利範圍第1項之基座構造物，其中前述引導基座 由可各自分離之三個部份所構成，且前述三個部份係一 10 個中央部份及兩個側部份，而前述兩個側部份係相互對 稱之構造且配置於前述中央部份之兩側。 3. 如申請專利範圍第2項之基座構造物，其中前述中央部份 之下部形成有與前述引導基座結合的突起。 4. 如申請專利範圍第1項之基座構造物，其中前述引導基座 15 包含： 一對可各自分離之本體，係相互對稱之構造且對向配 置，並且其各自之端部密合者；及 支持棒，係連結且支持前述本體之兩端者。 5. 如申請專利範圍第4項之基座構造物，其中前述本體之兩 20 端上部形成有凹溝，以與前述前導基座結合。 6. 如申請專利範圍第1項之基座構造物，其中前述前導基座 及前述引導基座係由石英、陶瓷或石墨製成。 121373817 X. Patent Application Range: 1. A pedestal structure, which is disposed in a large-area substrate processing system, characterized in that the pedestal structure comprises: a heater, which provides a heat source for the thermal substrate; The leading base covers the upper portion of the heater and mounts the substrate; and the guiding base surrounds the side of the heater. 2. The susceptor structure of claim 1, wherein the guiding base is composed of three parts that are separable, and the three parts are a central portion and two side portions. And the two side portions are symmetrical to each other and disposed on both sides of the central portion. 3. The susceptor structure of claim 2, wherein the lower portion of the central portion is formed with a protrusion that is coupled to the guide base. 4. The susceptor structure of claim 1, wherein the guiding base 15 comprises: a pair of bodies that can be separated from each other, configured to be symmetrical to each other and disposed opposite to each other, and their respective end portions are in close contact with each other And support sticks, which are connected and support the two ends of the aforementioned body. 5. The susceptor structure of claim 4, wherein the upper ends of the two ends of the body are formed with grooves to be combined with the front guide base. 6. The susceptor structure of claim 1, wherein the leading base and the guiding base are made of quartz, ceramic or graphite. 12
TW097106814A 2007-02-28 2008-02-27 Susceptor structure in large area substrate processing system TWI373817B (en)

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WO2020023409A1 (en) * 2018-07-24 2020-01-30 Applied Materials, Inc. Optically transparent pedestal for fluidly supporting a substrate

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